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DATA SHEET
TDA8580
Multi-purpose power amplifier
Preliminary specification
Supersedes data of 1996 Jan 4
File under Integrated Circuits, IC01
1998 Feb 25
Philips Semiconductors
Preliminary specification
TDA8580
FEATURES
GENERAL DESCRIPTION
General
PACKAGE
TYPE
NUMBER
NAME
TDA8580
DBS17P
1998 Feb 25
DESCRIPTION
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
VERSION
SOT243-1
Philips Semiconductors
Preliminary specification
TDA8580
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
8.0
28
Iq(tot)
VP = 14.4 V
120
140
mA
Istb
VP = 14.4 V
50
Gv
voltage gain
single-ended
25
26
27
dB
bridge-tied load
31
32
33
dB
16
THD = 0.5%; VP = 24 V;
RL = 8
28
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 4
0.05
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8
0.05
VP = 14.4 V; mute
condition; RL = 4
10
20
mV
VP = 14.4 V; on condition
100
mV
THD
Voffset(DC)
output power
Vno
Rs = 1 k; VP = 14.4 V
100
150
SVRR
fi = 1 kHz; Vripple(p-p) = 2 V;
on or mute condition;
Rs = 0
55
dB
4.2
THD = 0.5%; VP = 24 V;
RL = 4
13
VP = 14.4 V; mute
condition; RL = 4
10
20
mV
Single-ended application
Po
output power
Voffset(DC)
VP = 14.4 V; on condition
100
mV
Vno
Rs = 1 k; VP = 14.4 V
80
120
SVRR
fi = 1 kHz; Vripple(p-p) = 2 V;
on or mute condition;
Rs = 0
45
dB
1998 Feb 25
Philips Semiconductors
Preliminary specification
TDA8580
BLOCK DIAGRAM
VP1
VP2
15
IN1
7
60
k
TDA8580
IN2
45 k
V/I
8
60
k
V/I
9
45
k
60
k
10
STANDBY
11
45 k
V/I
OA
V/I
OA
14
17
OUT3
OUT4+
45 k
13
5
DIAGNOSTIC
INTERFACE
16
MGE010
PGND1
1998 Feb 25
BUFFER
BUFFER
12
60
k
MUTE
OUT2
45
k
BUFFER
IN4
OUT1+
45 k
30 k
IN5
OA
Vpx
Vpx
IN3
OA
PGND2
DIAG
Philips Semiconductors
Preliminary specification
TDA8580
PINNING
SYMBOL
PIN
DESCRIPTION
OUT1+
non-inverting output 1
PGND1
power ground 1
VP1
supply voltage 1
OUT2
inverting output 2
STANDBY
standby/mute/on selection
DIAG
diagnostic output
IN1
IN2
BUFFER
handbook, halfpage
OUT1+
PGND1
VP1
OUT2
STANDBY
input 1
DIAG
input 2
IN1
buffer output
(single-ended output buffer)
IN2
IN3
10
input 3
BUFFER
IN4
11
input 4
IN3
10
IN5
12
IN4
11
MUTE
13
mute/on selection
IN5
12
OUT3
14
inverting output 3
MUTE
13
VP2
15
supply voltage 2
OUT3
14
PGND2
16
power ground 2
OUT4+
17
non-inverting output 4
VP2
15
PGND2
16
OUT4+
17
TDA8580
MGE009
1998 Feb 25
Philips Semiconductors
Preliminary specification
TDA8580
Protections are included to avoid the IC being damaged at:
FUNCTIONAL DESCRIPTION
Amplifier in mute
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
MIN.
MAX.
UNIT
operating
28
45
VDIAG
18
IOSM
IORM
4.5
Vrev
Vsc
24
Ptot
75
Tj
junction temperature
150
Tstg
storage temperature
55
+150
Tamb
40
+150
no external series
resistor in supply line;
note 1
Note
1. The maximum supply voltage under short circuit conditions is 28 V with an additional resistor in the supply line of
tbf .
1998 Feb 25
Philips Semiconductors
Preliminary specification
TDA8580
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
VALUE
in free air
UNIT
40
K/W
1.5
K/W
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 C; fi = 1 kHz; RL = ; measured in test circuit of Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
8.0
14.4
Iq(tot)
120
140
mA
Istb
standby current
50
VO
DC output voltage
VP = 14.4 V
7.0
VP(mute)
6.0
7.0
8.0
Vo
20
mV
VI
DC input voltage
VP = 14.4 V
4.0
0.8
28
Vhys(5)(stb)
hysteresis voltage at
STANDBY pin for standby
condition
note 1
0.2
V5(mute)
V13 < 1 V
2.0
5.5
V5(on)
8.0
18
V5 = 5 V
1.0
V13(on)
V5 = 5 V
3.5
5.5
Isink = 1 mA
0.2
0.8
ILI
leakage current
VDIAG = 14.4 V
CD
clip detector
tbf
tbf
Tj(diag)
145
1998 Feb 25
Philips Semiconductors
Preliminary specification
SYMBOL
PARAMETER
TDA8580
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Po
output power
fi = 1 kHz; Po = 1 W; RL = 4
0.05
0.1
fi = 10 kHz; Po = 1 W;
RL = 4 ;
Filter: 22 Hz < f < 30 kHz
0.2
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 4
0.05
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8
0.05
15
16
THD = 0.5%; VP = 24 V;
RL = 8
25
28
18
20
THD = 10%; VP = 24 V;
RL = 8
35
Gv
voltage gain
Vo(rms) = 3 V
31
32
33
dB
cs
channel separation
Po = 2 W; fi = 1 kHz; RL = 4
40
55
dB
Gv
channel unbalance
dB
Voffset(DC)
VP = 14.4 V; on condition
100
mV
10
20
mV
Vno
Rs = 1 k; VP = 14.4 V; note 3
100
150
Vno(mute)
note 3
20
Vo(mute)
Vi(rms) = 1 V
500
SVRR
Rs = 0 ; fi = 1 kHz;
Vripple(p-p) = 2 V; on or mute
condition
55
dB
Zi
input impedance
23
30
37
CMRR
Rs = 0 ; Vi(rms) = 0.5 V;
fi = 1 kHz
60
dB
fi = 1 kHz; Po = 1 W; RL = 4
0.05
0.1
fi = 10 kHz; Po = 1 W;
RL = 4 ;
Filter: 22 Hz < f < 30 kHz
0.2
1998 Feb 25
Philips Semiconductors
Preliminary specification
SYMBOL
TDA8580
PARAMETER
output power
Po
CONDITIONS
MIN.
TYP.
MAX.
UNIT
4.2
THD = 0.5%; VP = 24 V;
RL = 4
11.5
13
5.5
THD = 10%; VP = 24 V;
RL = 4
14
16
Gv
voltage gain
Vo(rms) = 3 V
25
26
27
dB
cs
channel separation
Po = 2 W; fi = 1 kHz; RL = 4
40
46
dB
Gv
channel unbalance
dB
Voffset(DC)
Vno
VP = 14.4 V; on condition
100
mV
10
20
mV
Rs = 1 k; VP = 14.4 V; note 3
80
120
Vno(mute)
note 3
20
Vo(mute)
Vi(rms) = 1 V
500
SVRR
fi = 1 kHz; Vripple(p-p) = 2 V, on
or mute condition; Rs = 0
45
dB
46
60
74
60
dB
Zi
input impedance
CMRR
VOLTAGE AT PIN 13
FUNCTION
V5 < 0.8 V
dont care
standby (off)
V13 < 1 V
on (AC operating)
V5 8.0 V
dont care
on (AC operating)
1998 Feb 25
Philips Semiconductors
Preliminary specification
TDA8580
play
normal
handbook, halfpage
MGL404
handbook, halfpage
amplifier
in mute
DIAG
45 V
on
STANDBY
mute
VP
amplifier
output
14.4 V
tr
t (ms)
tf
MGE019
short-circuit
overload
handbook, halfpage
handbook, halfpage
DIAG
normal
play
DDD
normal
DIAG
amplifier
output
amplifier
output
MGE021
MGE020
1998 Feb 25
10
Philips Semiconductors
Preliminary specification
TDA8580
short-circuit to
VP
PGND
handbook, halfpage
DIAG
amplifier
output
MGE022
1998 Feb 25
11
Philips Semiconductors
Preliminary specification
TDA8580
APPLICATION INFORMATION
1000 F
16/40 V
220 nF
VP1
VP2
15
VinL
TDA8580
45 k
V/I
IN2 8
60
k
V/I
OA
4 OUT2
9 BUFFER
45
k
60
k
IN3 10
60
k
IN4 11
BUFFER
45 k
V/I
V/I
14 OUT3
OA
OA
17
45 k
DIAGNOSTIC
INTERFACE
2
PGND1
+5 V
12
16
PGND2
4 or 8
OUT4+
MUTE 13
5
4 or 8
45
k
IN5 12
STANDBY
45 k
BUFFER
1998 Feb 25
1 OUT1+
Vpx
30 k
100 F
10 V
OA
Vpx
VinR
100 nF
IN1 7
60
k
220 nF
VP
MGE011
DIAG
10
k
Philips Semiconductors
Preliminary specification
TDA8580
VP
1000 F
16/40 V
VP1
VP2
15
100 nF
220 nF IN1 7
VinR
60
k
TDA8580
FRONT
45 k
V/I
220 nF IN2 8
60
k
VinL
V/I
4 OUT2
OA
45 k
9
45
k
IN5 12
60
k
IN3 10
BUFFER
BUFFER
V/I
14 OUT3
OA
220 nF
IN4 11
V/I
4 or 8
45 k
VinR
60
k
17
OA
OUT4+
4 or 8
45 k
+5 V
VinL
MUTE 13
STANDBY
DIAGNOSTIC
INTERFACE
2
PGND1
13
16
PGND2
1998 Feb 25
4 or 8
45
k
BUFFER
REAR
4 or 8
Vpx
30 k
220 nF
OUT1+
Vpx
100 F
10 V
OA
MGE013
DIAG
10
k
Philips Semiconductors
Preliminary specification
TDA8580
220 nF
VP1
VP2
15
100 nF
IN1 7
45 k
60
k
VinR
V/I
TDA8580
IN2 8
V/I
OUT1+
+
4 OUT2
OA
45 k
45
k
30 k
9
45
k
BUFFER
BUFFER
60
k
V/I
IN3 10
14 OUT3
OA
60
k
IN4 11
V/I
4 or 8
45 k
IN5 12
BUFFER
VinR
220 nF
4 or 8
Vpx
Vpx
100 F
10 V
OA
60
k
220 nF
VP
1000 F
16/40 V
17
OA
OUT4+
4 or 8
45 k
+5 V
VinL
MUTE 13
STANDBY 5
DIAGNOSTIC
INTERFACE
2
PGND1
16
PGND2
MGE012
1998 Feb 25
14
DIAG
10
k
Philips Semiconductors
Preliminary specification
TDA8580
NAME
7, 8, 10,
11 and 12
inputs
EQUIVALENT CIRCUIT
VP
handbook, halfpage
IN
MGE014
1, 4,
14 and 17
outputs
handbook, halfpage
VP
OUT
0.5 VP
5 and 13
mode select
handbook, halfpage
MGE015
VP
MGE016
1998 Feb 25
15
Philips Semiconductors
Preliminary specification
TDA8580
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
Dh
Eh
A2
B
j
E
A
L3
Q
c
v M
17
e1
bp
e2
w M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
bp
D (1)
Dh
E (1)
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
2.54
e1
e2
1.27 5.08
Eh
L3
Z (1)
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.4
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-03-11
97-12-16
SOT243-1
1998 Feb 25
EUROPEAN
PROJECTION
16
Philips Semiconductors
Preliminary specification
TDA8580
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 25
17