2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier

Features

High Current Capability: IC = 17A.

High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : VCEO=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SA1943/FJL4215.
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings*

Symbol

TO-264

1.Base 2.Collector 3.Emitter

Ta = 25C unless otherwise noted

Parameter

Ratings

Units

BVCBO

Collector-Base Voltage

250

BVCEO

Collector-Emitter Voltage

250

BVEBO

Emitter-Base Voltage

IC

Collector Current(DC)

17

IB

Base Current

1.5

PD

Total Device Dissipation(TC=25C)

Derate above 25C

150
1.04

W
W/C

TJ, TSTG

Junction and Storage Temperature

- 50 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics*
Symbol
RJC

Ta=25C unless otherwise noted

Parameter
Thermal Resistance, Junction to Case

Max.

Units

0.83

C/W

* Device mounted on minimum pad size

hFE Classification
Classification

hFE1

55 ~ 110

80 ~ 160

2009 Fairchild Semiconductor Corporation

2SC5200/FJL4315 Rev. C

www.fairchildsemi.com
1

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

January 2009

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=5mA, IE=0

250

BVCEO

Collector-Emitter Breakdown Voltage

IC=10mA, RBE=

250

BVEBO

Emitter-Base Breakdown Voltage

IE=5mA, IC=0

ICBO

Collector Cut-off Current

VCB=230V, IE=0

5.0

IEBO

Emitter Cut-off Current

VEB=5V, IC=0

5.0

hFE1

DC Current Gain

VCE=5V, IC=1A

55

hFE2

DC Current Gain

VCE=5V, IC=7A

35

VCE(sat)

Collector-Emitter Saturation Voltage

IC=8A, IB=0.8A

0.4

3.0

VBE(on)

Base-Emitter On Voltage

VCE=5V, IC=7A

1.0

1.5

fT

Current Gain Bandwidth Product

VCE=5V, IC=1A

30

MHz

Cob

Output Capacitance

VCB=10V, f=1MHz

200

pF

160
60

* Pulse Test: Pulse Width=20s, Duty Cycle2%

Ordering Information
Part Number

Marking

Package

Packing Method

2SC5200RTU

C5200R

TO-264

TUBE

hFE1 R grade

2SC5200OTU

C5200O

TO-264

TUBE

hFE1 O grade

FJL4315RTU

J4315R

TO-264

TUBE

hFE1 R grade

FJL4315OTU

J4315O

TO-264

TUBE

hFE1 O grade

2009 Fairchild Semiconductor Corporation

2SC5200/FJL4315 Rev. C

Remarks

www.fairchildsemi.com
2

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Electrical Characteristics* T =25C unless otherwise noted

16

IB=200mA

IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA

12

Vce=5V
o

Tj=125 C

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

14

IB = 100mA

10

IB = 80mA
8

IB = 60mA
6

IB = 40mA
4
2

Tj=25 C

100

Tj=-25 C

10

IB = 0
0
0

10

12

14

16

18

20

1
1

VCE[V], COLLECTOR-EMITTER VOLTAGE

10

Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain ( R grade )

hFE, DC CURRENT GAIN

Tj=125 C

Tj=25 C

Vce(sat)[mV], SATURATION VOLTAGE

10000
o

Vce=5V

100
o

Tj=-25 C

10

1
1

10

Ic=10Ib

1000

100

Tj=-25 C
10

1
0.1

10

Ic[A], COLLECTOR CURRENT

Ic[A], COLLECTOR CURRENT

Figure 3. DC current Gain ( O grade )

Figure 4. Collector-Emitter Saturation Voltage

10000

Vbe(sat)[mV], SATURATION VOLTAGE

12

VCE = 5V
10

IC[A], COLLECTOR CURRENT

Tj=25 C

Tj=125 C

0
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Tj=-25 C

Tj=25 C

1000

Tj=125 C

100
0.1

10

Ic[A], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

Figure 6. Base-Emitter Saturation Voltage

2009 Fairchild Semiconductor Corporation

2SC5200/FJL4315 Rev. C

Ic=10Ib

www.fairchildsemi.com
3

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Typical Characteristics

100

IC MAX. (Pulsed*)

0.9

IC [A], COLLECTOR CURRENT

Transient Thermal Resistance, Rthjc[ C / W]

1.0

0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-6

1E-5

1E-4

1E-3

0.01

0.1

10ms*
10

IC MAX. (DC)

100ms*
DC

0.1

*SINGLE NONREPETITIVE
o

PULSE TC=25[ C]
0.01

10

100

Pulse duration [sec]

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Power Derating

Figure 8. Safe Operating Area

160

PC[W], POWER DISSIPATION

140
120
100
80
60
40
20
0
0

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 9. Power Derating

2009 Fairchild Semiconductor Corporation

2SC5200/FJL4315 Rev. C

www.fairchildsemi.com
4

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Typical Characteristics

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Package Dimensions

(8.30)

(1.00)

(2.00)

20.00 0.20

1.50 0.20

(7.00)

(7.00)

2.50 0.10

4.90 0.20
(1.50)

(1.50)

2.50 0.20

3.00 0.20

(1.50)
20.00 0.50

0.2

.00

(2.00)

(11.00)

.00

2
(R

(R1

(0.50)

0
3.3

(9.00)

(9.00)

(8.30)

(4.00)

20.00 0.20

6.00 0.20

TO-264

+0.25

1.00 0.10

+0.25

0.60 0.10

2.80 0.30

(2.80)

5.45TYP
[5.45 0.30]

(0.15)

(1.50)

3.50 0.20

5.00 0.20

5.45TYP
[5.45 0.30]

Dimensions in Millimeters

2009 Fairchild Semiconductor Corporation

2SC5200/FJL4315 Rev. C

www.fairchildsemi.com
5

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

2009 Fairchild Semiconductor Corporation

2SC5200/FJL4315 Rev. C

www.fairchildsemi.com
6