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2SK4108

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI)

2SK4108
Switching Regulator Applications

Unit: mm

z Low drainsource ON resistance

: RDS (ON) = 0. 21 (typ.)

z High forward transfer admittance

: |Yfs| = 14 S (typ.)

z Low leakage current

: IDSS = 100 A (max) (VDS = 500 V)

z Enhancement mode

: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)


Characteristic

Symbol

Rating

Unit

Drainsource voltage

VDSS

500

Draingate voltage (RGS = 20 k)

VDGR

500

Gatesource voltage

VGSS

30

(Note 1)

ID

20

Pulse (Note 1)

IDP

80

PD

150

Single-pulse avalanche energy


(Note 2)

EAS

960

mJ

Avalanche current

IAR

20

Repetitive avalanche energy (Note 3)

EAR

15

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

55~150

Drain current

DC

Drain power dissipation (Tc = 25C)

1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE

JEDEC

JEITA

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (chc)

0.833

C / W

Thermal resistance, channel to


ambient

Rth (cha)

50

C / W

Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.08 mH, RG = 25 , IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

2007-06-29

2SK4108
www.DataSheet4U.com

Electrical Characteristics (Ta = 25C)


Characteristic

Symbol

Gate leakage current


Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage

Test Condition

Min

Typ.

Max

Unit

IGSS

VGS = 25 V, VDS = 0 V

10

V (BR) GSS

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 500 V, VGS = 0 V

100

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Drainsource ON resistance

RDS (ON)

VGS = 10 V, ID = 10 A

0.21

0.27

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 10 A

4.0

14

Input capacitance

Ciss

3400

Reverse transfer capacitance

Crss

25

Output capacitance

Coss

320

70

130

70

280

70

45

25

Gate threshold voltage

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

tr
ton

RL = 20

50

Turn on time

ID = 10A

VGS 10 V
0V

Switching time
Fall time

ns

tf

Turn off time

VDD
200 V
Duty <
= 1%, tw = 10 s

toff

Total gate charge (gatesource


plus gatedrain)

Qg

Gatesource charge

Qgs

Gatedrain (Miller) charge

Qgd

pF

VDD 400 V, VGS = 10 V, ID = 20 A

nC

SourceDrain Ratings and Characteristics (Ta = 25C)


Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current


(Note 1)

IDR

20

Pulse drain reverse current


(Note 1)

IDRP

80

Forward voltage (diode)

VDSF

IDR = 20 A, VGS = 0 V

1.7

Reverse recovery time

trr

1300

ns

Reverse recovery charge

Qrr

IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / s

20

Marking

TOSHIBA

K4108

Part No. (or abbreviation code)


Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

2007-06-29

2SK4108
www.DataSheet4U.com
ID VDS
ID VDS
10

20

Common source 10
Tc = 25C
Pulse Test

10

(A)

(A)

ID

5.25
6

Drain current

ID

16

Drain current

Common source
Tc = 25C
Pulse Test

5.5

5
4

5.75
12
5.5
8

5.25
5

4.5

4.5

VGS = 4V

VGS = 4 V

0
0

Drain-source voltage

VDS

(V)

10

40

VDS

50

(V)

VDS VGS
20

(V)

Common source
VDS = 20 V
Pulse Test

Common source
Tc = 25C
Pulse Test

16

VDS

40

30

20

Drain-source voltage

ID (A)

30

Drain-source voltage

ID VGS
50

Drain current

20

25

Tc = 55C

100

12

8
ID = 20 A
4

10
5

Gate-source voltage

VGS

10

(V)

|Yfs| ID

12

16

VGS

20

(V)

RDS (ON) ID

Common source
VDS = 20 V
Pulse Test

Tc = 55C

100

10
25

1.0

Drain-source ON resistance RDS (ON) ()

Forward transfer admittance Yfs (S)

100

Gate-source voltage

10

100

Drain current ID (A)

Common source
Tc = 25C
VGS = 10 V
Pulse Test
0.1
1

10

100

Drain current ID (A)

2007-06-29

2SK4108
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RDS (ON) Tc

IDR VDS
100

Common source
VGS = 10 V
Pulse Test

Drain reverse current IDR (A)

Drain-source ON resistance RDS (ON) ()

1.0

0.8

0.6

10
ID = 20A

0.4

0.2

Common source
Tc = 25C
Pulse Test

10

10
1
5
3

40

80

120

0.1

160

VGS = 0 V

1
0

0.2

Case temperature Tc (C)

0.4

0.6

0.8

1.0

Drain-source voltage

VDS

Gate threshold voltage Vth (V)

(pF)
Capacitance C

1000
Coss

100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25C

Crss

10

Drain-source voltage

VDS

0
80

100

40

(V)

80

120

160

(V)

500

20
VDS

400

16

VDS

150

Drain-source voltage

PD (W)

40

Dynamic input / output


characteristics

200

Drain power dissipation

Case temperature Tc (C)

PD Tc

100

50

(V)

Common source
VDS = 10 V
ID = 1mA
Pulse Test

Ciss

1.4

Vth Tc

Capacitance VDS
10000

10
0.1

1.2

40

80

120

160

200V
300
400V

Case temperature Tc (C)

200
VGS
100

0
0

200

12
VDD = 100V

Common source
ID = 20 A
Ta = 25C
Pulse Test

20

40

60

80

100

VGS (V)

40

Gate-source voltage

0
80

0
120

Total gate charge Qg (nC)

2007-06-29

2SK4108
www.DataSheet4U.com

EAS Tch

SAFE OPERATING AREA


1000

EAS (mJ)

1000

ID max (pulse) *

100

Avalanche energy

Drain current ID (A)

100 s *
ID max (continuous)
1 ms *
10

DC OPEATION
Tc = 25C

Single pulse Ta=25

0.1

Curves must be derated


linearly with increase in
temperature.

800

600

400

200

0
25
VDSS max

50

75

100

125

Channel temperature (initial)

150

Tch (C)

0.01
1

10

Drain-source voltage

100

1000

VDS (V)

BVDSS

15 V

IAR

15 V

VDS

VDD
Test circuit
RG = 25
VDD = 90 V, L = 4.08 mH

Wave form

AS =

1
B VDSS

L I2
B

V
VDSS
DD

2007-06-29

2SK4108
www.DataSheet4U.com

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.


TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2007-06-29