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Supervisors
Prof. PK Guha
Measurement setup
One of Ag/AgCl, Ag, Pt used as a
gate electrode due to inertness.
Tungsten electrodes for source &
drain
I-V characteristics measurement
using semiconductor parameter
analyzer.
Dirac point :
Minimum of
Ids Vgs
characteristic.
Device Fabrication
Oxide growth (300nm).
Fabrication of gold electrodes
for source and drain.
rGO (reduced graphene oxide)
deposition on substrate
(performed this semester.)
GO reduction
Thermal reduction
Heating at 150 degrees.
Chemical reduction
Reaction with Sodium Borohydride (SBH)
19 mg SBH in 10 mL water
Room temperature reaction
Change in color
Molecule Sensed
Glucose
Glutamate
Immunoglobin E protein
DNA
Project proposals
Using rGO channel
Cheaper than CVD graphene channel
Better reproducibility than mechanical exfoliation
THANK YOU