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P(T, )V()d
(2)
= 0
0 P(T, )d
where P(T, ) is the (hemispherical) spectral emissive power
of the emitter at temperature T, and V() is the photopic luminosity
function, which characterizes the spectral sensitivity of the human
eye19. The luminous efciency can theoretically assume any value
from 0 to 1; lighting sources, however, should also faithfully reproduce colours, requiring broadband emission in the visible spectrum.
The index that characterizes the quality of light is known as the
colour rendering index (CRI), which attains its peak value (100)
for high-temperature broadband emitters such as incandescent
light bulbs (Supplementary Fig. 3). An ideal lighting source would
then be a hypothetical high-temperature black body that emits
only at visible wavelengths. Such an emitter would have a luminous
efciency of approximately 4045% (see Methods).
In terms of luminous efciency, Fig. 1a shows that we could,
in principle, approach such high values by incorporating onedimensional photonic lms made of commonly deposited materials
and amenable to large-scale fabrication. The notion of increasing
the efciency of incandescent light bulbs by recycling infrared
radiation has been suggested previously2022. The novelty of our
approach is twofold. First, rejection of light at unwanted wavelengths (and subsequent reabsorption by the emitter) is made
1
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. 2 School of Electrical and Computer
Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906, USA. 3 Department of Mechanical Engineering,
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. * e-mail: ilico@mit.edu
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35
1.0
Power (bare emitter)
0.8
30
Normalized power
25
20
15
10
Front view
0.6
Th
em erm
it t al
er
a 40
DOI: 10.1038/NNANO.2015.309
Layers
0.4
Vis
0.2
Vis
IR IR
0.0
0
50
100
150
200
250
300
No. of layers
50
100
150
200
No. of layers
250
300
Cross-section
Figure 1 | Potential of cold-side thermal emission tailoring. a, Projected luminous efciency of a tungsten thermal emitter (3,000 K) optimally enclosed by
interference structures of different design: quarter-wave stack (green), three- and four-material rugate stack (purple and orange), and stacks designed using
a combination of optimization techniques (red; see main text). For quarter-wave and rugate stacks, we introduce chirp to increase the bandwidth, and for
each number of layers (x axis) we explore the complete parameter space to nd the optimal design (see Methods). For all designs, the material refractive
indices are bounded by SiO2 (low) and TiO2 (high). In addition to these two indices, the designs in red also use intermediate values (for example, Al2O3 and
Ta2O5). b, The amount of power needed for the emitter to reach the temperature of 3,000 K when it is surrounded by the corresponding designs shown in a.
The power is normalized to the power needed to heat the plain emitter to the same temperature (dashed line). c, Sketch of the proposed scheme to tailor
the thermal emission of high-temperature objects; top: sketch of our experimental set-up (Supplementary Fig. 1).
2.5
Bare emitter
+ Optimized stack
+ Fabricated stack
2.0
(
Eye response)
1.5
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
Wavelength (m)
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DOI: 10.1038/NNANO.2015.309
Simulation prediction
Experimental result
1.0
2,250
2,000
0.8
0.6
1,500
1,250
0.4
Reectance
Wavelength (nm)
1,750
1,000
0.2
750
450
0.0
0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
Figure 3 | Simulation and experimental measurements over a wide range of wavelengths and angles. Comparison between the simulated (left) and
measured (right) reectance spectra of the fabricated 90-layer interference structure (Fig. 2, blue line). The stack shows high transmission across the visible
spectrum and high reection in the infrared. The experimental data were restricted to 70 because of the sample size.
Front view (0)
4
Emitter + stack:
Model
Measured
Emitter + stack:
Model
Measured
Emitter (bare)
Emitter (bare)
Eye response
Eye response
0
0
400
500
600
700
800
400
500
Wavelength (nm)
600
700
800
Wavelength (nm)
Figure 4 | Experimental demonstration of thermal emission tailoring. Measured (blue, solid) and modelled (grey, dashed-dot) spectral intensity of the
combined emitter-tailoring-structure system (Emitter + stack) normalized to the intensity of the plain emitter (black, dashed) that consumes the same
amount of power. The fabricated structure consists of 90 layers (see Fig. 3) and is made of two materials (SiO2 and Ta2O5) deposited on a silica substrate.
The spectrum is measured at 0 (front view) and 45 (side view). The sensitivity of the human eye (luminosity function) is shown in shaded purple. For the
same amount of input power, the luminous ux is 3.07 (2.90) times enhanced at 0 (45) compared with that of a plain emitter.
advanced techniques for optical thin-lm synthesis. Figure 2 compares the hemispherical (integrated over all angles) spectral emissive power of a plain emitter (bare tungsten) at 3,000 K with that of
the same emitter surrounded by the 300-layer optimized structures
from Fig. 1a. For reference, the shaded purple region corresponds
to the luminosity function of the human eye. Because we optimized for the total luminous efciency, the shape of the effective
emissivity curve is similar to the sensitivity prole of the human
eye (red line in Fig. 2): naturally, it is possible to optimize for a
different spectral prole, based on application and requirements.
As a result, the thermal emitter in this structure reaches its
target temperature (3,000 K) for one-tenth of the original input
power (Fig. 1b).
To demonstrate this approach, we designed a proof-of-concept
version. The interference structure, for simplicity, consists of only
two materials (SiO2 and Ta2O5) and 90 layers in total. The design
was obtained using the optimization techniques described above,
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(3)
Methods
Methods and any associated references are available in the online
version of the paper.
4
DOI: 10.1038/NNANO.2015.309
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3. Greffet, J.-J. et al. Coherent emission of light by thermal sources. Nature 416,
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for spectral control of thermal radiation. Appl. Phys. Lett. 82, 16851687 (2003).
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as thermally stable metallic photonic crystals. J. Mater. Chem. 21,
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13. Arpin, K. A., Losego, M. D. & Braun, P. V. Electrodeposited 3D tungsten
photonic crystals with enhanced thermal stability. Chem. Mater. 23,
47834788 (2011).
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of polycrystalline tantalum photonic crystals. Opt. Express 21, 011482 (2013).
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18. Chan, W. R. et al. Toward high-energy-density, high-efciency, and moderatetemperature chip-scale thermophotovoltaic. Proc. Natl Acad. Sci. USA 110,
53095314 (2013).
19. Sharpe, L. T., Stockman, A., Jagla, W. & Jgle, H. A luminous efciency function,
V*(), for daylight adaptation. J. Vision 5, 948968 (2005).
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23. Hecht, E. Optics 4th edn (Addison-Wesley, 2002).
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(2014), sponsored by the US Department of Energy; http://www.ngldc.org
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press/2013/20130411-philips-creates-the-world-s-most-energy-efcient-warmwhite-led-lamp.wpd
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Acknowledgements
The authors thank P. Rebusco for critical reading and editing of the manuscript, and
J.J. Senkevich, W. Chan, S. Kooi, I. Wang, A. Cukierman, M. Harradon, A. Musabeyoglu,
NATURE NANOTECHNOLOGY
DOI: 10.1038/NNANO.2015.309
S. Johnson and Y. Xiang Yeng for valuable input. This work was partially supported by the
Army Research Ofce through the ISN (contract no.W911NF-13-D0001). The fabrication
part of the effort was supported by S3TEC, an Energy Frontier Research Center funded by
the US Department of Energy (DOE), Ofce of Science, Basic Energy Sciences (BES)
(award no. DE-SC0001299/DE-FG02-09ER46577).
Additional information
Author contributions
All authors discussed the results and made critical contributions to the work.
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Supplementary information is available in the online version of the paper. Reprints and
permissions information is available online at www.nature.com/reprints. Correspondence and
requests for materials should be addressed to O.I.
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Methods
Thermal emitter properties and experimental setup details. The thermal emitter
was a sheet of refractory metal (tungsten sheet, 8085 m thick, obtained from
H.C. Starck), laser machined into a geometry that allowed for both resistive heating
as well as efcient reabsorption of reected light (Supplementary Fig. 1b). Before
laser cutting, the sheet of tungsten was covered with a thin layer (10 m) of
ultraviolet-curable, water-soluble, polymer (DaeCoat PCA-120713) to protect
against material ablation. Afterwards, the coating was removed in deionized water by
sonication. The optical properties of refractory metals strongly depend on
temperature as well as sample purity and preparation conditions. Supplementary
Fig. 2a shows the general dependence of tungsten emittance (normal) on
wavelength31. The crossover point, in the 11.5 m region, separates the spectral
regions where the emissivity increases/decreases with temperature.
In our calculations, we used tabulated data for normal spectral emittance31, in
200 K steps for a range of temperatures (1,6003,100 K). Emittance for angles other
than zero was calculated as follows: the high-temperature dielectric permittivity for
tungsten was obtained by tting the emittance data at each temperature to a sum of
DrudeLorentzian dielectric functions. Once the permittivity (as a function of
wavelength and temperature) was known, the angular dependence of absorptivity
was derived from Fresnel reection coefcients. Finally, from Kirchoffs law, the
(directional, spectral) emissivity equals the (directional, spectral) absorptivity. For
intermediate temperatures (temperatures between the 200 K steps) we obtained the
emissivity by linear interpolation.
Light emitted by the resistively heated tungsten lament was captured by two
detectors, at 0 and 45 angles with respect to the surface of the lament emitter
(Supplementary Fig. 1a). The detectors were calibrated to correct for any
nonlinearity in the measured signal and to capture the emitted light once the system
had reached optical equilibrium and the lament had reached its peak temperature/
resistance (1.5 s). The air in the setup was evacuated (P 1 106 torr)
and argon was added (P 1 104 torr). The one-dimensional photonic lm was
fabricated using ion-beam sputtering at Evaporated Coatings, with layers of Ta2O5
and SiO2 on a fused-silica substrate (2 2 cm). In general, coatings deposited using
ion-beam sputtering have particularly low absorption in the visible and the
near-infrared: the extinction coefcient for Ta2O5 was estimated to be <1 104
(550 nm32) and the tantala/silica coatings were used for antireection coatings in
precise gravitational wave detectors, with absorption loss on the order of ppm
(1,064 nm33). For wavelengths in the mid-infrared (>4 m), these materials can
become absorptive; however, we note from Fig. 2 that a 3,000 K tungsten emitter
radiates a very small fraction of light (3.8%) in the spectrum above 4 m.
Undesired absorption in the optically thick silica substrate may be further
reduced in glasses with particularly low infrared absorption such as Cornings
7979 or Heraeus Infrasil (in addition, the substrate thickness can be
reduced further).
Thermal emitter temperature estimation. Supplementary Fig. 2b shows the
dependence of tungsten resistivity on temperature34. The knowledge of resistivity,
together with the shape and size of the emitter, allowed us to estimate the
temperature from the measured resistance. First, we performed a nite-element heat
transfer analysis (COMSOL Multiphysics) to characterize the equilibrium
temperature distribution of the emitter, shown in Supplementary Fig. 2c. We observe
that only the main part of the emitter (the radiator-like structure) reaches very high
temperatures. Further analysis conrmed that most of the power was indeed
dissipated in this part of the emitter. In addition, we observed a highly uniform
temperature distribution between the central strips of the emitter. Values for the
high-temperature thermal conductivity and heat capacity of tungsten were obtained
from the literature35,36.
The measured resistance of the emitter in Fig. 4 of the main text was R = 2.90
when the interference structure surrounded the emitter and R = 2.62 when there
was no such structure (plain emitter). In both cases, the measured power delivered to
the emitter was the same (135 W) and included all emissions as well as losses in the
device. Taking into account the uncertainty and the variation in the emitter
thickness (8085 m), these values of resistance imply (based on the resistivity
dependence shown in Supplementary Fig. 2b) a temperature estimate for the central
part of the emitter of 2,9003,050 K for the case when the ltering structure is
present and an estimate of 2,7002,830 K when the emitter is bare. Another way to
estimate the temperature is to evaluate the energy of the emitted light, assuming the
literature value of temperature-dependent tungsten emittance31. It is important to
note that at high temperatures, resistivity and, particularly, emissivity data for
refractory metals is heavily dependent on the sample preparation process, the
presence of impurities and the surface nish31,34, which means that the margin of
error for our estimates may be signicant. With that in mind, our model estimates
(given the area of the emitter and the view factor of 0.95) that to consume 135 W of
power, the emitter would have a temperature of 2,950 K and the total luminous
efciency of the system would be 6.6%.
Because the high-temperature emitter is a plain, unpatterned material, it can
withstand extremely high temperatures without structural surface degradation. At
the temperatures required for efcient incandescent lighting, however, material
evaporation from the surface of the emitter may affect the optical properties of the
close-by interference structure. This can be particularly pronounced for pure metals
DOI: 10.1038/NNANO.2015.309
such as tungsten or tantalum, but efforts that include lament doping, the
introduction of halogen elements and high-molecular-weight inert gases could
reduce this effect. On the other hand, at the temperatures needed for
thermophotovoltaic energy conversion (such as selective radiators/absorbers1518) of
1,5002,000 Kstill very challenging for direct (hot-side) patterning of the thermal
emitter surfacesuch evaporation effects are drastically reduced.
Optimal efciency for lighting applications. Using equation (2) we can estimate
the luminous efciency of an ideal lighting source. A hypothetical black (or grey)
body at a temperature of 2,800 K(5,800 K) with its spectrum truncated to
wavelengths where the luminosity function is 1% of its peak value has a luminous
efciency of 40.1% (40.4%). This value depends on the choice of the cutoff, and as
such it should be mainly used as a guide.
Interference structure design and optimization. The optimizations of luminous
efciency shown in Fig. 1 were performed for various stack designs, including
quarter-wave as well as the three- and four-material rugate stacks. An optimized
quarter-wave stack consisting of two materials (SiO2 and TiO2) can be effective to a
certain extent at suppressing infrared radiation and allows for a higher luminous
efciency relative to the plain incandescent emitter (Fig. 1a, dashed). However, after
the rst several dozen periods, the quarter-wave stack no longer offers improved
efciency as additional layers are added. Another well-known issue with a quarterwave-stack design is the rejection of additional higher-order bands at 0/3, 0/5 and
so on, limiting their potential for very-broadband reection in the infrared spectrum
and transmission in the visible spectrum.
The purpose of a rugate-like interference structure24,40 is to suppress such
higher-order reection bands and thus allow for a wide rejection band in the infrared
(0.72.5 m) while maintaining low reection in the visible spectrum. This is
achieved through a sinusoidal refractive index prole. There are several ways to
implement such a prole: for example, the index of refraction n(x) or the dielectric
permittivity n 2(x) can be sinusoidally dependent on the structure optical thickness x.
However, it can be shown that the most complete suppression of the reectance
bands at higher harmonics is achieved when the natural logarithm of the refractive
index exhibits a sinusoidal prole40. Such a structure would have a refractive index
prole that satises ln(n(x)) = acos(4x/0) + b, where 0 is the design wavelength
and x is the optical thickness. Coefcients a and b ensure the correct limit to the
optical prole and are given by a = 1/2ln(nL/nH) and b = 1/2ln(nLnH) where nL and
nH denote the low and high refractive indices. In practice, the rugate lter prole is
obtained by using a discrete set of materials with refractive indices bounded by nL
and nH (corresponding to SiO2 and TiO2 in our case). For a four-material rugate
structure, the corresponding stacking of layers is [ABCDDCBA], where by denition
n(A) = nL , n(D) = nH and the optical thickness of each layer is 0/4. We increased the
bandwidth of the interference structure by introducing period chirping, dened as
Ti = Ti1 (1 + / 1)1/(Np 1) where Ti denotes the optical thickness of the ith period,
Np is the total number of layer periods and is the dimensionless chirp parameter.
Given the denitions above, for the quarter-wave stack and the three- and fourmaterial rugate structure designs from Fig. 1 of the main text, we swept the complete
parameter space to nd the optimal rugate design for a given number of layers. We
note that both three-material (Fig. 1a, pink) and four-material (Fig. 1a, orange)
rugate stacks represent a marked improvement over the quarter-wave stack. In
particular, when the total number of layers is small, the four-material design (with its
larger unit cell) performs worse than the three-material design; this is rectied for
stacks with more layers.
For custom optimization (Figs 1 and 2, red; Fig. 2, blue), we used rugate-like
designs as a starting point and applied other optimization methods37, including
needle optimization38. Specically, we used a combination of local, gradient-based,
optimization algorithms39, made possible by implementing a transfer matrix
approach that in addition to calculating luminous efciency also calculates the
necessary derivatives of the efciency (with respect to each layer thickness) at a
comparatively small computational cost. This is combined with a parallelized
(MPI) implementation of the calculation that efciently determines where a new
layer should be introduced or an existing layer removed to maximize the gure of
merit (luminous efciency) of the combined system (emitter + stack). For the
fabricated structure we also require an exceptionally high CRI. The combination
of these methods yields the designs with luminous efciency values plotted in
Figs 1 and 2.
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Thermal Radiative Properties: Metallic Elements and Alloys Vol. 7
(IFI/Plenum, 1970).
32. Demiryont, H., Sites, J. R. & Geib, K. Effects of oxygen content on the optical
properties of tantalum oxide lms deposited by ion-beam sputtering. Appl. Opt.
24, 490 (1985).
33. Harry, G., Bodiya, T. P. & DeSalvo, R. Optical Coatings and Thermal Noise in
Precision Measurement (Cambridge Univ. Press, 2012).
34. Desai, P. D., Chu, T. K., James, H. M. & Ho, C. Y. Electrical resistivity of selected
elements. J. Phys. Chem. Ref. Data 13, 10691096 (1984).
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