B

WFF8N60
WFF8N60B
Silicon N-Channel MOSFET
Features

7.5A,600V,RDS(on)(Max1.2)@VGS=10V

Ultra-low Gate charge(Typical 28nC)

Fast Switching Capability

100%Avalanche Tested

Isolation Voltage (VISO=4000V AC)

Maximum Junction Temperature Range(150)

General Description
This Power

MOSFET is produced using Winsemi's advanced

planar stripe,VDMOS technology.this latest technology has been

especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.

Absolute Maximum Ratings

Symbol
VDSS

Parameter

Value

Units

Drain Source Voltage

600

Continuous Drain Current(@Tc=25)

7.5*

Continuous Drain Current(@Tc=100)

4.3*

30*

30

ID
IDM

Drain Current Pulsed

(Note1)

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note2)

240

mJ

EAR

Repetitive Avalanche Energy

(Note1)

15

mJ

dv/dt

Peak Diode Recovery dv /dt

(Note3)

4.5

V/ ns

45

0.35

W/

-55~150

300

Total Power Dissipation(@Tc=25)

PD
Derating Factor above 25
TJ,Tstg
TL

Junction and Storage Temperature

Channel Temperature

*Drain current limited by junction temperature

Thermal Characteristics
Symbol

Parameter

Value
Min

Typ

Max

Units

RQJC

Thermal Resistance , Junction -to -Case

2.8

/W

RQJA

Thermal Resistance , Junction-to -Ambient

62.5

/W

Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

B
WFF8N60
WFF8N60B
Electrical Characteristics(Tc=25)
Characteristics

Symbol

Gate leakage current

Gate-source breakdown voltage

Min

Type

Max

Unit

IGSS

VGS=30V,VDS=0V

100

nA

V(BR)GSS

IG=10 A,VDS=0V

30

VDS=600V,VGS=0V

10

VDS=480V,Tc=125

100

Drain cut -off current

Drain -source breakdown voltage

Test Condition

IDSS

V(BR)DSS

ID=250 A,VGS=0V

600

Gate threshold voltage

VGS(th)

VDS=10V,ID=250 A

Drain -source ON resistance

RDS(ON)

VGS=10V,ID=3.75A

0.8

1.2

Forward Transconductance

gfs

VDS=50V,ID=3.75A

8.7

Input capacitance

Ciss

VDS=25V,

1100

1430

Reverse transfer capacitance

Crss

VGS=0V,

16

21

Output capacitance

Coss

f=1MHz

135

175

VDD=200V,

30

70

ton

ID=7.5A

80

170

tf

RG=25

65

140

60

130

28

36

14.5

Min

Type

Max

Unit

Rise time

tr

Turn-on time
Switching time

pF

ns
Fall time
Turn-off time

(Note4,5)

toff

Total gate charge(gate-source

VDD=480V,
Qg

plus gate-drain)

VGS=10V,
nC

Gate-source charge

Qgs

Gate-drain("miller") Charge

Qgd

ID=7.5A
(Note4,5)

Source-Drain Ratings and Characteristics(Ta=25)

Characteristics

Symbol

Test Condition

Continuous drain reverse current

IDR

7.5

Pulse drain reverse current

IDRP

28

Forward voltage(diode)

VDSF

IDR=7.5A,VGS=0V

1.4

Reverse recovery time

trr

IDR=7.5A,VGS=0V,

320

ns

Reverse recovery charge

Qrr

dIDR / dt =100 A / s

2.4

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=18.5mH IAS=7.5A,VDD=50V,RG=0,Starting TJ=25
3.ISD7.5A,di/dt200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width300us,Duty Cycle2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution

2/7

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WFF8N60
WFF8N60B

Fig.1 On State Characteristics

Fig.2 Transfer Current Characteristics

Fig.3 On-Resistance Variation vs

Fig.4 Body Diode Forward Voltage

Drain Current

Variation with Source Current

and Temperature

Fig.5 On-Resistance Variation vs

Fig.6 Gate Charge Characteristics

Junction Temperature
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WFF8N60
WFF8N60B

Fig.7 Maximum Safe Operation Area

Fig.8 Maximum Drain Current vs

Case Temperature

Fig.9 Transient Thermal Response Curve

4/7

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WFF8N60
WFF8N60B

Fig.10 Gate Test Circuit & Waveform

Fig.11 Resistive Switching Test Circuit & Waveform

Fig.12 Unclamped Inductive Switching Test Circuit & Waveform

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B
WFF8N60
WFF8N60B

Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform

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B
WFF8N60
WFF8N60B
TO-220
F Package Dimension
TO-220F

Unit:mm

7/7

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