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Student Id :010105082

Name : Shilp Mehta

Characteristics of MOSFET
Shilp.D.Mehta, Department Of Electrical and Electronics Engineering, San Jose State University,
San Jose, California.

Abstract A large number of transistors are fabricated on single


silicon wafer in order to deliver a certain functionality. This work
attempts to study and analyze one of the most commonly used
component on chip i.e. MOSFET. We take into consideration two
types of MOSFET i.e. NMOS and PMOS. We plot their I-V
characteristics and determine different parameters and observe
the functioning of MOSFET using Cadence

III. MOSFET I-V CHARACTERISTICS


We use the following circuit to plot the I-V Characteristic of
NMOS MOSFET :-

Keywords: MOSFET, I-V characteristics, Cadence.

I. INTRODUCTION
MOSFET ,a three terminal device(internally four) used for
amplifying and switching purpose has replaced the bipolar
junction transistor (BJT) in almost all analog and digital
circuit. This is due to the fact that it requires very little current
to turn on while delivering a much higher current to load.
They are of two types i.e. NMOS and PMOS. These MOSFET
operate in two different modes i.e. Enhancement mode and
Depletion Mode. Before a MOSFET is used for amplifying
purpose and to be fabricated we consider various parameters
such as transistor width, power dissipation, trans conductance,
dynamic resistance etc. In this assignment we plot the I-V
characteristics of NMOS and PMOS transistor in Cadence and
determine trans conductance and dynamic resistance for each
of the MOSFET.

II. MOSFET PARAMETERS:


Trans conductance :
Trans conductance of MOSFET is defined by ratio of drain
current to gate source voltage when drain to source voltage is
constant.

gm = [Ids/Vgs]\
Dynamic resistance :
Dynamic resistance of MOSFET is given by ,
Rds = [Ids/Vds]-1
The I-V characteristic of MOSFET is characterized by three
regions, namely triode region, saturation region and cut off. In
triode region MOSFET acts as voltage controlled resistor and
in this region Ids varies linearly with Vds. In saturation current
Ids almost remains constant and in cutoff region MOSFET is
in OFF state.

IV. DATA USED FOR PLOTTING IDS VS VGS


Variable
gs
ds

From
0V
0V

To
1V
1V

Step Size
10mV
100mV

We use the above data to plot Ids vs Vgs for different values
of Vds. We than plot the gm Vs Vgs for different values of
Vds. We also observe second and third derivative effects.
Step 1 : We first plot Ids vs Vgs : (here Vds is fixed)

Student Id :010105082
Name : Shilp Mehta
Step 2 : We parameterize Vds to plot Ids vs Vgs for different
values of Vds.

Third derivative :

We use similar method to plot rds.


From the above plot we determine the value of threshold
voltage of transistor. As seen from the graph the threshold
voltage is around 0.4V.
Step 3: Plotting Trans conductance curve:
Here we use calculator functionality and apply take derivate of
Ids w.r.t Vgs. We then plot the second and third derivative of
the same.
First derivative :

V. DATA USED TO PLOT IDS VS VDS


Variable
gs
ds

From
0V
0V

To
1V
1V

Step Size
100mV
10mV

We use the above data to plot Ids vs Vds for different values
of Vgs. We than plot the rds Vs Vds for different values of
Vgs. We also observe second and third derivative effects.
Step 1 : We first plot Ids vs Vds (here Vgs is fixed)

Second Derivative :

Student Id :010105082
Name : Shilp Mehta

Step 2: We parameterize Vgs to plot Ids vs Vds for various


values of Vgs .

Step 3 : Plotting dynamic resistance


Here we use calculator functionality and apply derivate of Ids
w.r.t Vds. We then plot the second and third derivative of the
same.

First derivative:

Third derivative :

VI. CONCLUSION
Here we have plotted the I-V characteristics of NMOS and
observed variation of trans conductance and dynamic
resistance with respect to Vgs and Vds respectively.

VII. REFERENCES
Tommy Chan Carusone, Analog Circuit Design.
Q 1. Why gm reaches maximum and then decreases ?
Ans . We see from the graph that trans conductance reaches
maximum and then decreases. This is because after pinch off
drain current Ids essentially remain constant in the active
region.Hence the value of trans conductance tends to zero.

Second derivative :

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