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11N80
Preliminary
Power MOSFET
DESCRIPTION
TO-3P
FEATURES
TO-230
* RDS(ON) <0.9@VGS=10V
* Low gate charge ( typical 60 nC)
* High switching speed
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N80L-T3P-T
11N80G-T3P-T
11N80L-TC3-T
11N80G-TC3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-3P
TO-230
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-3P
TO-230
www.unisonic.com.tw
Copyright 2014 Unisonic Technologies Co., Ltd
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11N80
Preliminary
Power MOSFET
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
800
V
30
V
11
A
Continuous
Drain Current
Pulsed
11
A
Avalanche Current
44
A
Single Pulsed
960
mJ
Avalanche Energy
Repetitive
12
mJ
Peak Diode Recovery dv/dt
4.0
V/ns
TO-3P
297
Power Dissipation (TC=25C)
PD
W
TO-230
156
Junction Temperature
TJ
-55~+150
C
Storage Temperature Range
TSTG
-55~+150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=15mH, IAS=11.7A, VDD=50V, RG=25 starting TC=25C.
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-3P
TO-230
TO-3P
TO-230
JA
JC
RATINGS
40
62.5
0.42
0.80
UNIT
C/W
C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250A, VGS=0V
Breakdown Voltage Temperature
BVDSS/TJ Reference to 25C, ID=250A
Coefficient
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250A
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=640V, ID=11A,
Gate to Source Charge
QGS
RG=25
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=400V, ID=11A, RG=25,
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=11.0A, VGS=0V
Body Diode Reverse Recovery Time
tRR
VGS=0V, IS=11A, dIF/dt=100A/S
Body Diode Reverse Recovery Charge
QRR
V
1.0
V/C
10
A
+100 nA
-100 nA
5
0.9
2530 3290 pF
215 280 pF
23
30
pF
60
13
25
60
130
130
85
80
130
270
270
180
11
44
1.4
1000
170
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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