KSE13003

NPN Silicon Transistor

High Voltage Switch Mode Applications
High Voltage Capability
High Speed Switching
Suitable for Switching Regulator and Motor Control

TO-126

1. Emitter

Absolute Maximum Ratings*

Symbol

2.Collector

3.Base

T C = 25C unless otherwise noted (notes_1)

Parameter

Value

Units

V CBO

Collector-Base Voltage

700

V CEO

Collector-Emitter Voltage

400

V EBO

Emitter-Base Voltage

IC

Collector Current (DC)

1.5

ICP

Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (TC = 25C)

TJ

Junction Temperature

TSTG

Storage Temperature Range

0.75

20

150

-65 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

hFE Classification
Classification

H1

H2

H3

hFE*

9 ~ 16

14~ 21

19 ~ 26

* Test on VCE = 2V, IC = 0.5A.

2007 Fairchild Semiconductor Corporation

KSE13003 Rev. 1.0.0

www.fairchildsemi.com
1

KSE13003 NPN Silicon Transistor

March 2008

Symbol
BVCEO
IEBO

TC = 25C unless otherwise noted

Parameter

Conditions

Collector-Emitter Breakdown Voltage

IC = 5mA, IB = 0

Emitter Cut-off Current

VEB = 9V, IC = 0

Min.

Typ.

Max

400

Units
V

10
8
5

mA

hFE

*DC Current Gain

VCE = 2V, IC = 0.5A

VCE = 2V, IC =1A

VCE(sat)

*Collector Emitter Saturation Voltage

IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 1.5A, IB = 0.5A

0.5
1
3

V
V
V

VBE(sat)

*Base Emitter Saturation Voltage

IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A

1
1.2

V
V

Cob

Output Capacitance

VCB = 10V , f = 0.1MHz

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.1A

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

VCC =125V, IC = 1A
IB1 = 0.2A, IB2 = - 0.2A
RL = 125W

40

21

pF

MHz
1.1

ms

4.0

ms

0.7

ms

* Pulse Test: Pulse Width=5ms, Duty Cycle10%

Package Marking and Ordering Information

Device Item (notes_2)

Device Marking

KSE13003H1ASTU

1 E13003

Package

Packing Method

TO-126

TUBE

KSE13003H2ASTU

2 E13003

TO-126

TUBE

KSE13003H3ASTU

3 E13003

TO-126

TUBE

Remarks

Notes_2 :
1) The Affix -H1/-H2/-H3 means the hFE classification.
2) The Sufix -STU means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com

2007 Fairchild Semiconductor Corporation

KSE13003 Rev. 1.0.0

www.fairchildsemi.com
2

KSE13003 NPN Silicon Transistor

Electrical Characteristics

KSE13003 NPN Silicon Transistor

Typical Performance Characteristics

100

IB = 500mA
IB = 450mA
IB = 400mA

1.6

1.2

VCE = 2V

IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA

0.8

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

2.0

IB = 50mA

0.4

IB = 0mA
0.0

10

0.1
0.01

0.1

VCE[V], COLLECTOR-EMITTER VOLTAGE

10

Figure 2. DC current Gain

10

10

IC = 4 IB

tSTG

VBE(sat)

tSTG, tF[ms], TIME

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

Figure 1. Static Characteristic

0.1

tF
0.1

VCE(sat)

0.01
0.01

0.1

0.01
0.1

10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Switching Time

30

10

ms
10

ICMAX. (pulse)

PC[W], POWER DISSIPATION

25

s
0m
10

s
5m

IC MAX. (DC)

s
1m

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

0.1

0.01

15

10

10

100

1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2007 Fairchild Semiconductor Corporation

KSE13003 Rev. 1.0.0

20

www.fairchildsemi.com
3

KSE13003 NPN Silicon Transistor

2007 Fairchild Semiconductor Corporation

KSE13003 Rev. 1.0.0

www.fairchildsemi.com
4