IRGP4760PbF

IRGP4760-EPbF

Insulated Gate Bipolar Transistor

VCES = 650V

IC = 60A, TC =100C
tSC 5.5s, TJ(max) = 175C

VCE(ON) typ. = 1.7V @ IC = 48A

n-channel
G
Gate

C
Collector

Features

E
Emitter

Benefits

Low VCE(ON) and Switching Losses

5.5s Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175C
Positive VCE (ON) Temperature Coefficient

High Efficiency in a Wide Range of Applications

Lead-Free, RoHs compliant

Environmentally friendly

Base part number

Package Type

IRGP4760PbF
IRGP4760-EPbF

TO-247AC
TO-247AD

G
IRGP4760EPbF
TO247AD

G
IRGP4760PbF
TO247AC

Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding

Rugged Transient Performance

Increased Reliability
Excellent Current Sharing in Parallel Operation

Standard Pack
Form
Quantity
Tube
25
Tube
25

Orderable Part Number

IRGP4760PbF
IRGP4760-EPbF

Absolute Maximum Ratings

VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
VGE
PD @ TC = 25C
PD @ TC = 100C
TJ
TSTG

Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw

Max.
650
90
60
144
192
20
325
160
-40 to +175

Units
V
A

V
W
C

300 (0.063 in. (1.6mm) from case)

10 lbfin (1.1 Nm)

Thermal Resistance
RJC
RCS
RJA

Parameter
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)

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Min.

Typ.

0.24
40

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Max.
0.46

Units
C/W

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Electrical Characteristics @ TJ = 25C (unless otherwise specified)

V(BR)CES
V(BR)CES/TJ

Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage

Min.
650

Typ.

0.69

1.7

2.1
Gate Threshold Voltage
5.5

VGE(th)
Threshold Voltage Temperature Coeff.

-23
VGE(th)/TJ
gfe
Forward Transconductance

31

1.0
ICES
Collector-to-Emitter Leakage Current

700
Gate-to-Emitter Leakage Current

IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
VCE(on)

Collector-to-Emitter Saturation Voltage

Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon

Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss

Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres

Turn-Off Switching Loss

Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

RBSOA

Reverse Bias Safe Operating Area

SCSOA

Short Circuit Safe Operating Area

Min.

Typ.
96
30
40
1.7
1.0
2.7
70
60
140
30
2.9

1.4
4.3
55
60
145
65
3000
150
80

Max.

2.0
V
IC = 48A, VGE = 15V, TJ = 25C

IC = 48A, VGE = 15V, TJ = 175C

7.4
V
VCE = VGE, IC = 1.4mA

mV/C VCE = VGE, IC = 1.4mA (25C-150C)

S
VCE = 50V, IC = 48A, PW = 20s
25
A VGE = 0V, VCE = 650V

VGE = 0V, VCE = 650V, TJ = 175C

100
nA VGE = 20V
Max Units
Conditions
145
IC = 48A
nC VGE = 15V
45
VCC = 400V
60
2.6
1.9
mJ IC = 48A, VCC = 400V, VGE=15V
4.5
RG = 10, L = 210H, TJ = 25C
90
Energy losses include tail & diode
80
ns reverse recovery
160
50

FULL SQUARE
5.5

Units
Conditions
V
VGE = 0V, IC = 100A
V/C VGE = 0V, IC = 3mA (25C-175C)

mJ

ns

IC = 48A, VCC = 400V, VGE=15V

RG = 10, L = 210H, TJ = 175C
Energy losses include tail & diode
reverse recovery

VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175C, IC = 192A
VCC = 520V, Vp 650V
VGE = +20V to 0V
TJ = 150C,VCC = 400V, Vp 650V
s
VGE = +15V to 0V
pF

Notes:

VCC = 80% (VCES), VGE = 20V.

R is measured at TJ of approximately 90C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.

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100

For both:
Duty cycle : 50%
Tj = 175C
Tcase = 100C
Gate drive as specified
Power Dissipation = 163W

90

Load Current ( A )

80
70
60

Square Wave:
VCC

50
40

30
Diode as specified

20
10
0.1

10

100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)
100

350
300

80

250
IC (A)

Ptot (W)

60

40

200
150
100

20

50
0

0
25

50

75

100

125

150

175

25

TC (C)

50

75

100

125

150

175

TC (C)

Fig. 3 - Power Dissipation vs.

Case Temperature

Fig. 2 - Maximum DC Collector Current vs.

Case Temperature
1000

1000

100

10

100
IC (A)

IC (A)

10sec

100sec

10
1

1msec

Tc = 25C
Tj = 175C
Single Pulse

DC
1

0.1
1

10

100

1000

10000

VCE (V)

Fig. 4 - Forward SOA

TC = 25C; TJ 175C; VGE = 15V
3

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10

100

1000

VCE (V)

Fig. 5 - Reverse Bias SOA

TJ = 175C; VGE = 20V
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200

200

VGE = 18V

VGE = 15V

VGE = 15V

VGE = 12V

VGE = 12V

150

VGE = 10V

VGE = 10V

VGE = 8.0V

VGE = 8.0V

ICE (A)

150

ICE (A)

VGE = 18V

100

100

50

50

0
0

10

10

V CE (V)

V CE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 20s

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 25C; tp = 20s
12

200
VGE = 18V

10

VGE = 15V
VGE = 10V

VGE = 8.0V

V CE (V)

ICE (A)

ICE = 24A
ICE = 48A

VGE = 12V

150

100

ICE = 96A
6
4

50
2
0

0
0

10

10

Fig. 8 - Typ. IGBT Output Characteristics

TJ = 175C; tp = 20s

Fig. 9 - Typical VCE vs. VGE

TJ = -40C

12

12

10

10

ICE = 24A
ICE = 48A

ICE = 24A
ICE = 48A

ICE = 96A

V CE (V)

V CE (V)

20

V GE (V)

V CE (V)

ICE = 96A
6

15

10

15

20

10

15

20

V GE (V)

V GE (V)

Fig. 10 - Typical VCE vs. VGE

TJ = 25C

Fig. 11 - Typical VCE vs. VGE

TJ = 175C

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10

200

9
TJ = 25C
TJ = 175C

8
7
Energy (mJ)

ICE (A)

150

100

EON

6
5
4
3

50

EOFF

1
0

0
4

10

12

0 10 20 30 40 50 60 70 80 90 100 110

14

V GE (V)

IC (A)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 20s

Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175C; L = 210H; VCE = 400V, RG = 10; VGE = 15V
8

1000

tdOFF
100

Energy (mJ)

Swiching Time (ns)

tF
tdON

EON

5
4
3
EOFF

tR

1
0

10
0

10 20 30 40 50 60 70 80 90 100

20

40

60

80

100

120

IC (A)

RG ()

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175C; L = 210H; VCE = 400V, RG = 10; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175C; L = 210H; VCE = 400V, ICE = 48A; VGE = 15V
20

10000

240
Tsc

Isc

16

200

tdOFF

Time (s)

tdON

tR

100

tF

10

160

120

80

1
0

20

40

60

80

100

RG ()

Fig. 16 - Typ. Switching Time vs. RG

TJ = 175C; L = 210H; VCE = 400V, ICE = 48A; VGE = 15V
5

12

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Current (A)

Swiching Time (ns)

1000

40
8

10

12

14

16

18

VGE (V)

Fig. 17 - VGE vs. Short Circuit Time

VCC = 400V; TC = 150C
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16

V GE, Gate-to-Emitter Voltage (V)

10000

Capacitance (pF)

Cies
1000

100
Coes
Cres

14

V CES = 400V

12

V CES = 300V

10
8
6
4
2
0

10
0

100

200

300

400

500

20

40

60

80

100

Q G, Total Gate Charge (nC)

VCE (V)

Fig. 19 - Typical Gate Charge vs. VGE

ICE = 48A

Fig. 18 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz
1

Thermal Response ( Z thJC )

D = 0.50
0.1

0.20
0.10
0.05

0.01

0.02
0.01

R1
R1
J
1

R2
R2

R3
R3

Ci= iRi
Ci= iRi

0.001

0.0001
1E-006

SINGLE PULSE
( THERMAL RESPONSE )

1E-005

Ri (C/W)
C

i (sec)

C0.131857

0.000301

0.190293

0.003726

0.137850

0.021183

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case

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Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
L

DUT /
DRIVER

VCC

Rg

Switching Loss
Fig.C.T.3 - S.C. SOA Circuit

Fig.C.T.4 - Switching Loss Circuit

C force

100K
D1

22K
C sense

DUT

G force

0.0075F

E sense

E force
BVCES Filter

Fig.C.T.5 - Resistive Load Circuit

7

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Fig.C.T.6 - BVCES Filter Circuit

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600

500

100

500

400

80

400

60

300

300

ICE (A)

VCE (V)

tf

VCE (V)

120

600

90% ICE

200

40

100
TEST
CURRENT

80
60
40

200
90% ICE

10% VCE

100

20

100

20
10% ICE

10%ICE

0
Eoff Loss

-100
0

0
Eon Loss

-100
4.25

-20

0.5

4.75

-20

5.25

time (s)

time(s)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175C using Fig. CT.4

600

600

500

500

VCE

400

300

300

200

200

ICE

100

Ice (A)

400

Vce (V)

10% VCE

-0.5

120

tr

ICE (A)

100
0

-100

-100
2

10

time (s)

Fig. WF3 - Typ. S.C. Waveform

@ TJ = 150C using Fig. CT.3

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TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"

INTERNATIONAL
RECTIFIER
LOGO

PART NUMBER
IRFPE30
56

135H
57

ASSEMBLY
LOT CODE

DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "

PART N U M BER

IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56

035H
57

ASSEM B LY
LO T C O D E

D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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Qualification Information
Industrial

Qualification Level
Moisture Sensitivity Level

TO-247AC

(per JEDEC JESD47F)

N/A

TO-247AD

N/A
Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.

Revision History
Date
8/22/2014

Comments
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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