Вы находитесь на странице: 1из 3

SUR2x100-06

Ultra Fast Recovery Epitaxial Diodes


Dimensions SOT-227(ISOTOP)

SUR2x100-06

VRSM
V
600

Symbol
IFRMS
IFAVM
IFRM

IFSM

Test Conditions

VISOL
Md
Weight

Inches
Min.
Max.

31.50
7.80

31.88
8.20

1.240
0.307

1.255
0.323

C
D

4.09
4.09

4.29
4.29

0.161
0.161

0.169
0.169

E
F

4.09
14.91

4.29
15.11

0.161
0.587

0.169
0.595

G
H

30.12
37.80

30.30
38.20

1.186
1.489

1.193
1.505

J
K

11.68
8.92

12.22
9.60

0.460
0.351

0.481
0.378

L
M

0.76
12.60

0.84
12.85

0.030
0.496

0.033
0.506

N
O

25.15
1.98

25.42
2.13

0.990
0.078

1.001
0.084

P
Q

4.95
26.54

5.97
26.90

0.195
1.045

0.235
1.059

R
S

3.94
4.72

4.42
4.85

0.155
0.186

0.174
0.191

T
U

24.59
-0.05

25.07
0.1

0.968
-0.002

0.987
0.004

V
W

3.30
0.780

4.57
0.830

0.130
19.81

0.180
21.08

Unit

TVJ=TVJM
TC=70oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM

150
96
TBD

TVJ=45oC

t=10ms (50Hz), sine


t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine

1200
1300
1080
1170

t=10ms (50Hz), sine


t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine

7200
7100
5800
5700

A2s

TVJ=150oC

TVJ=150oC

-40...+150
150
-40...+150

TVJ
TVJM
Tstg
Ptot

Millimeter
Min.
Max.

A
B

Maximum Ratings

TVJ=45oC
I2t

VRRM
V
600

Dim.

TC=25oC

250

50/60Hz, RMS
_
IISOL<1mA

2500

V~

Mounting torque
Terminal connection torque (M4)

1.5/13
1.5/13

Nm/lb.in.

30

SUR2x100-06
Ultra Fast Recovery Epitaxial Diodes

Symbol

Test Conditions

IR

TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM

VF
VTO

Characteristic Values
typ.
max.
3
1
20

mA

IF=100A; TVJ=150oC
TVJ=25oC

1.17
1.25

For power-loss calculations only

0.70

4.7

rT
RthJC
RthCK
trr
IRM

Unit

0.5
0.05
IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC
o

_
VR=100V; IF=80A; -diF/dt=200A/us; L<0.05mH;
TVJ=100 C

m
K/W

35

50

ns

19

24

FEATURES

APPLICATIONS

ADVANTAGES

* International standard package


miniBLOC (ISOTOP compatible)
* Isolation voltage 2500 V~
* Matched diodes f. parallel
operation
* Planar passivatd chips
* Two independent diodes
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour

* Antiparallel diode for high frequency


switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders

* High reliability circuit operation


* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling

SUR2x100-06
Ultra Fast Recovery Epitaxial Diodes
7
T = 100C
C VJ
V = 300V
6 R

150
A
125
IF

Qr

IRM 60

100

IF=200A
IF=100A
IF= 50A

4
75
TVJ=150C

80
A TVJ= 100C
70 VR = 300V

50
IF=200A
IF=100A
IF= 50A

40

3
30

50
2

TVJ=100C

25

20

10

TVJ=25C

0
0.0

0.5

1.0 V
VF

0
100

1.5

Fig. 1 Forward current IF versus VF

0
A/us 1000
-diF/dt

Fig. 2 Reverse recovery charge Qr


versus -diF/dt
260
ns
240

1.4

1.2

trr

200

400

600 A/us
800 1000
-diF/dt

Fig. 3 Peak reverse current IRM


versus -diF/dt
3.0
TVJ= 100C
IF = 100A us
2.5

60
V

TVJ= 100C
VR = 300V

50
VFR

220

Kf

tfr
2.0

40
1.0

tfr

200
Qr

0.8

IRM

IF=200A
IF=100A
IF= 50A

180

VFR

30

1.5

20

1.0

10

0.5

160
0.6
140
0.4

120
0

50

100

C 150

0
0

200

400

TVJ

Fig. 4 Dynamic parameters Qr, IRM


versus TVJ

600 A/us
800 1000
-diF/dt

Fig. 5 Recovery time trr versus -diF/dt

1
K/W

600 800
diF/dt

0.0
1000
A/us

Constants for ZthJC calculation:

1
2
3
4
5

D=0.7
0.5
0.3
0.2
0.1

0.1

400

Fig. 6 Peak forward voltage VFR and tfr


versus diF/dt

ZthJC

200

0.05
Single Pulse

0.05
0.001

0.01

0.1

1s

10
t

Fig. 7 Transient thermal impedance junction to case at various duty cycles

Rthi (K/W)

ti (s)

0.02
0.05
0.076
0.24
0.114

0.00002
0.00081
0.01
0.94
0.45