1

ACADEMY OF TECHNOLOGY
QUESTION BANK

BASIC ELECTRONICS ENGINEERING ( EC

201 )

AEIE, ECE & EE ( EVEN SEMESTER 2010 )

1 - MARK QUESTIONS :
1.

( CHOOSE THE CORRECT ANSWER )

A piece of single crystal solid has

a) all atoms arranged in a regular periodic geometrical pattern
b) no periodic arrangement of atoms in any macroscopic part
c) many regions of different periodic patterns
d) one primitive unit cell

2.

Electrical properties of crystalline solids are

a) density, elasticity and rigidity
b) resistivity, conductivity and piezoelectricity
c) thermal expansion, melting point and thermal capacity
d) permeability and coercivity

3.

Resistivity of intrinsic semiconductor is on the order of

a)

4.

10 8 m

b)

c)

1010 m

10 3 m

d)

1012 m

The energy gap between conduction band and valance band of a semiconductor is
on the order of
a) 10 eV

5.

b) 0 eV

Most widely used elemental intrinsic semiconductor is

a) Si

6.

7.

d) 0 026 eV

c) 1 eV

b) Ge

c) GaAs

d) GaAsP

The charge and mass of an electron are

a) 1.6 X 10

-19

C and 1.67 X 10

c) 1.6 X 10

- 19

C and 9.1 X 10

-27

-19

kg

kg

b) 1.6 X 10

19

C and 9.1 X 10

-31

kg

d) 1.5 X 1010 C and 2.5 X 1013 kg

Band gaps of Si and Ge are respectively

a) 1 1 eV and 0 67 eV

b)

2 2 eV

and

d)

1 2 eV

and

d)

2 5 10 23 cm 3

1 2 eV

c) 0 67 eV and 1 1 eV
2 2 eV

8.

Concentration of holes in intrinsic Si at 300 K is

a)

9.

1 5 1010 cm 3

b)

1 5 1013 cm 3

c)

2 5 1013 cm 3

The atomic numbers of Si and Ge are 14 and 32 respectively. Each of them has

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a) 4 valence electrons

b)

valence

electrons
c) 4 conduction electrons

d) 2 conduction electrons

10. Atomic bonds of Si or Ge crystals are

a) metallic bonds

b) hydrogen bonds

c) covalent bonds

d)

electrovalent

bonds
11. Due to increase of temperature, the resistivity of an intrinsic semiconductor
a) decreases only
b) increases only
c) does not change at all
d) first decreases and increases at higher temperature
12. The density of majority carriers in a p-type semiconductor depends on the
a) donor atom concentration

b) intrinsic atom concentration

c) doping technique

d) acceptor atom concentration

13. At room temperature, the resistivity of Si is higher than that of Cu because Si

contains
a) higher concentration of mobile charge b) lower concentration of mobile charge
c) equal concentration of holes and electrons

d)

only

immobile

charges
14. Fermi level of an n-type semiconductor lies
a) near the conduction band

b) near the valence band

c) at the middle of the band gap

d) outside the band gap

15. The space charge at the junction of a p-n diode is the charge of the
a) electrons

b) holes

c) immobile donor and acceptor ions

d) mobile ions

16. The barrier potential at a p-n junction is built in due to the

a) separation of holes and electrons

b) separation of opposite kinds of space

charge
c) separation of mobile and immobile charges

d)

thermal

generation of hole-electron pairs

17. The barrier voltage at a p-n junction offers opposition to
a) drift of minority carrier from both sides

b)

diffusion

of

majority carrier from both sides

c) drift of majority carrier from both sides d) diffusion of minority carrier from both
sides
18. Forward current in a p-n diode is mainly
a) diffusion current b) drift current

c) convection current

d) ion current

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19. Reverse saturation current, in a p-n diode is mainly

20.

a) minority diffusion current

b) minority drift current

c) majority diffusion current

d) majority drift current

Forward voltage across a diode

a) increases barrier voltage

b) decreases barrier voltage

c) has no effect on barrier voltage

d) increases barrier width

21. The width of an unbiased p-n junction is on the order of

a) mm
b) cm
c) m
22. Junction capacitance of a diode increases with

d) nm

a) increase of reverse voltage

b) decrease of forward voltage

c) decrease of reverse voltage

d) decrease of doping density

23. P-N unction diode is used as a

a) rectifying device

b) amplifying device

c) oscillatory element

d)

controlling

element
24. Zener mechanism in a junction device occurs at
a) a low reverse voltage

b) a high reverse

voltage
c) a high temperature

d)

low

temperature
25. Barrier width of p-n junction of a diode
a) increases with reverse voltage

b) decreases with reverse voltage

c) increases with forward voltage

d) does not change with voltage

26. The cut in voltage of a Si diode is about

a) 0 2 V

b) 0 7 V

c) 0 3 V

d) 0 026 V

27. The leakage ( reverse saturation ) current in a junction diode increases with
a) doping level increase

b)

temperature

increase
c) reverse voltage increase

d) temperature decrease

28. The avalanche breakdown occurs due to

a) high electric field at thin junction

b) high voltage at a wide junction

c) low reverse voltage at the junction

d) low forward voltage at the junction

29. Zener effect occurs due to

a) high electric field at a thin junction

b) high voltage at a wide junction

c) low electric field at a thin junction

d) low electric field at a wide junction

30. In a centre tap full wave rectifier, secondary peak voltage across each half is Vm ,
the PIV is

4
Vm
d) 4 Vm
2
31. In a half wave rectifier with capacitor filter, secondary peak voltage is Vm , then

a) Vm

b) 2 Vm

c)

b) 2 Vm

c)

PIV of the diode is

a) Vm

Vm
2

d) 4 Vm

32. A Zener diode is used as a

a) rectifier

b) amplifier

c) voltage regulator d) oscillator

33. A varactor diode is used in a

a) voltage controlled oscillator

b) voltage variable resistor

c) voltage controlled current source

d) current controlled voltage source

34. In an unbiased negative parallel clipper using an ideal p-n junction diode, when the
diode is forward biased, the output is
a) positive half cycle of the input

b) negative half cycle of the input

c) zero

d) infinite

35. For transistor action of a BJT

a) E-jn is reverse biased and C-jn is forward biased
b) E-jn is forward biased and C-jn is reverse biased
c) both junctions are forward biased
d) both junctions are reverse biased
36. In a pnp transistor biased in the active region the dominant current flow is by the
carrier x and the mechanism is y.
In the above statement x and y respectively stands for
a) holes, drift

b) electrons, drift

c) holes, diffusion

d)

electrons,

diffusion
37. The input impedance of a BJT amplifier has very high value in
a) CB mode

b) CC mode

c) CE mode

d) all modes

38. The of a BJT is measured as

a)

IE
IC

b)

IE
IB

c)

IC
IE

d)

IC
IB

39. I CBO depends strongly on temperature, approximately doubles for temperature

rise of every
a)

5 C

b)

7 C

c)

10 C

d)

15 C

40. and are related as

1

a)

b)

c)

41. NPN BJT is more used than p-n-p because of

a) hole mobility is higher

d) 1

b) election mobility is higher

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c) hole mobility is equal to election mobility

d) negative charge

of electrons
42. The load line of a transistor
a) has a negative slope
slope

b) is a curved line

c)

has

positive

d)

high

output

b)

high

Q-point

d) has zero slope

43. Fixed bias of BJT is not generally used in amplifier because of

a) low operating point stability

b) low power output

c) low input impedance

impedance
44. Self bias in BJT is generally used in amplifier because of
a) low Q-point stability
stability
c) simple circuitry

d) highest gain

45. When the temperature changes, the Q-point is shifted due to

a) change in I CBO

b) change in VCC

c) change in value

d)

change

in

resistance
46. In cut-off region the collector to emitter voltage ( VCE ) of a common emitter
amplifier is
a) 0 V

b) minimum

c) maximum

d) equal to VCC

47. The phase difference between the input and output voltages in a common base
arrangement is
a)

b)

90

c)

180

d)

270

48. For BJT biased in active region and under small signal low frequency, suitable
equivalent circuit is in terms of
a) r-parameter

b) g-parameter

c) h-parameter

d) y-parameter

49. The emitter resistor RE is used in self biasing BJT so as to

a) reduce voltage gain
c) reduce power

b) stabilize Q-point
d) increase voltage gain

50. For 0.1 sin wt V as input to a CE amplifier of voltage gain 50 the output voltage is
a)

5 sin( t 180 ) V

b) 50 sin( t) V

c)

50 sin( t 180 ) V

d) 5 sin( t) V

51. Voltage gain of an emitter follower is

a) just less than unity

b) much less than

unity
c) much greater than unity

d) just greater than unity

52. The main advantage of emitter follower is

a) voltage gain is low and current gain is high

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b) input resistance is low and output resistance is high
c) input resistance is high and output resistance is low
d) voltage gain is high
53. X using BJT has high current, voltage and power gain. X is
a) CE amplifier

b) CB amplifier

c) CC amplifier

d) rectifier

54. Current controlled current source property is observed in a

a) JFET

b) MOSFET

c) BJT

d) diode

c) BJT

d) SCR

55. A uni-polar electronic device is

a) diode

b) JFET

56. Highest input impedance is obtained in

a) BJT amplifier

b) JFET amplifier

c) MOSFET amplifier d) UJT amplifier

57. When the gate-source voltage VGS of an n-channel JFET is made more negative,
the drain current
a) increases

b) decreases

c) remains constant d) is unpredictable

58. JFET is
a) majority carrier device

b) minority carrier device

c) negative resistance device

d) bipolar device

59. Threshold voltage is related to

a) JFET

b) enhancement MOSFET

c) BJT

d) depletion MOSFET

60. For a JFET having g m 2 m S and rd 75 k , its is

a) 37 5

b) 150

c) 77

d) 73

61. In trans-conductance amplifier

a) input is voltage, output is current

b) input is current, output is voltage

c) input is voltage, output is power

c) input is power, output is voltage

62. In negative feedback amplifier, the gain stability is

a) increased

b) decreased

c) unchanged

d) undefined

c) 4

d) 6

63. Topologies of feedback amplifier are

a) 2

b) 3

64. In case of voltage series negative feedback, the input resistance and output
resistance respectively
a) increases and decreases

b) decreases and increases

c) infinite and zero

d) zero and infinite

65. The open loop 741C OPAMP has

a) voltage gain 105 and input resistance M

7
b) CMRR 90 dB and output resistance M
c) frequency BW kHz and output resistance 100
d) voltage gain 105 and BW GHz
66. The OPAMP is very popular because
a) its size is very small
b) it is very cheap
c) its external characteristics are suitable and adjustable to many applications
d) it is used without bias
67. An op-amp has a differential gain 20000 and CMRR 80 dB . The common mode
gain is
a) 2

b) 1

c) 0 5

d) 0

68. The closed loop gain of a non-inverting amplifier using op-amp is

a) always greater than unity

b) never less than unity

b) always less than unity

d) always equal to unity

69. Op-amp comparator circuit uses

a) positive feed backb) negative feedback

c)

no

feedback

d) current feedback
70. In most CRO, the available calibration voltage is
a) sinusoidal

b) saw tooth

c) square wave

d) triangular

71. The color of the bright spot on the screen depends on the
a) amplitude of the signal to be observed b) electron emitted from the cathode
c) material coating the screen

d) frequency of the signal to be observed

72. The time base of an oscilloscope is arranged by

a) sine voltage

b) triangular voltage c) saw tooth voltage d) square voltage

73. Lissajous pattern obtained on the screen of a CRO can be used to determine
a) phase difference between two signals b) voltage gain of an amplifier
c) amplitude and frequency of a signal

d) current gain of an amplifier

74. Intensity of the light spot on CRT screen is controlled by the potential of
a) pre-accelerating anode

b) post-accelerating anode

c) focusing anode

d) grid

75. Controlled rectification of high power ac is made by using

a) IGBT

b) UJT

c) SCR

d) BJT

76. Uni Junction Transistor is used as a device for

a) amplification

b) rectification

c) filtering

d) generation of saw tooth voltage

77. UJT has p-n junction of number

a) 1
b) 2

c) 3

d) 4

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78. The number of p-n junctions in a thyristor is
a) 1
b) 2
c) 3

d) 4

79. IGBT is developed for the characteristics of

a) high input impedance and high output current
b) low input impedance and high output current
c) high input impedance and high output impedance
d) low input impedance and low output power
80. Operating state that distinguishes an SCR from a diode is
a) forward conduction state

b) forward blocking state

c) reverse conduction state

d) reverse blocking state

5 - MARK QUESTIONS :
1.

How is barrier voltage in a p-n junction built in and why can it not be measured by
a voltmeter?

2.

Draw the energy band diagram of a p-n junction diode and explain why forward
current is large and reverse current is small.

3.

Draw the v-i characteristics of ideal and practical diodes, define cut in voltage and
comment on the forward and reverse resistances in both cases.

4.

Why is leakage current in Si diode much less than Ge diode and why does it
increase with temperature? Write the order of leakage current in Si diode.

5.

Draw the V-I characteristics of a Zener diode, locate the region of Zener break
down and explain Zener effect.

6.

Explain the mechanism of avalanche break down in p-n junction and write how it
differs from Zener break down.

7.

Distinguish between Avalanche breakdown and Zener breakdown. Why zener diode
is called a reference diode?

8.

In a centre tap full wave rectifier, R f 20 , RL 100 , I dc 1 A . Calculate the dc

load power and rectification efficiency.

9.

Explain the working principle of bridge rectifier with diagram.

10. State the advantages of bridge rectifier over the centre tap and mention one case
where centre tap rectifier is preferred to bridge rectifier.
11. A bridge rectifier uses a transformer with turns ratio

N1
N2

12 : 1 . Its primary voltage

is 220 V ( rms) . Find the dc voltage across the load and PIV at each diode. If a centre

9
tap rectifier is used in place of bridge rectifier, what would be PIV? Assume ideal
diodes.
12. Each of two diodes in a full wave rectifier has a forward resistance of 50 . The dc
voltage drop across a load resistance 1 2 k is 30 V . Find the primary to total
secondary turns ratio of the centre tap transformer, primary being fed from
220 V ( rms ) .

13. Draw a circuit diagram of a diode clipper and explain its operation.
14. Draw a diode clamper circuit and describe its operation.
15. Draw a circuit diagram of a BJT in CE mode for the study of output characteristics
and sketch the characteristics indicating saturation, active and cut off regions.
16. What is Early Effect? Define punch through in early effect.
17. A BJT has 0 99 and reverse saturation current I CO 0 1 A . If the base current is
15 A ,

calculate the emitter current and collector current.

18. Draw a fixed bias circuit using a BJT (Si) of 100 , VCC 15 V , R B 300 k ,
RC 1 k and calculate I B , I C and VCE .

19. Draw the circuit diagram of an emitter follower (a common collector amplifier) and
explain why it is used in spite of its voltage gain less than unity.
20. Compare the characteristics of BJT amplifiers in the three possible configurations.
21. Draw a basic structure of an n-channel JFET and explain its characteristics.
22. Draw a circuit diagram for studying drain characteristics of a JFET. Sketch the
characteristics and indicate pinch off voltage, linear and saturation regions.
23. Why is an FET known as unipolar device? What is pinch-off phenomenon in a JFET?
How do you compare this device with a BJT?
24. Draw the basic structure of an n-channel enhancement MOSFET and explain its
characteristics.
25. Sketch

the

circuit

diagram

of

summing

amplifier

using

op-amp

to

get

V 0 V1 2V 2 3V3 .

26. How can a scale changer and a phase shifter be obtained using an op-amp.
27. Calculate the output voltage V o using the circuit of figure shown below for resistor
components of value :

R f 470 k , R1 4 3 k , R2 33 k

and R3 33 k for an

input of Vi 80 V .

28. Show the four topologies of feedback with neat labeled diagram.

10
29. Draw a basic circuit of feedback amplifier, define feedback factor and feedback
gain. Show that gain stability increases in negative feedback.
30. Draw a block diagram of a CRO and state the function of each component.
31. Explain the formation of Lissajous figure in a CRO and draw such a figure for
horizontal signal frequency being double the vertical signal frequency.
32. a) What are the essential components of CRT?
b) For what reasons the vertical and horizontal plates are provided in a CRT?
c) Why is the grid in a CRT provided with a hole in it?
d) What is meant by the deflection sensitivity of a CRO?
e) Why is a CRO called versatile instrument?
33. Sketch the basic structure of an SCR, draw its v-i characteristics and explain its
operation using two transistors equivalent current.
34. Sketch the structure of UJT, draw and explain its characteristic curve.
35. What is an IGBT and what is its equivalent circuit? Mention its operation and
advantage over BJT and FET?

15 - MARK QUESTIONS :
1.

a) Sketch simple energy band diagram for intrinsic semiconductor at 0K

temperature. Show how the band diagram changes after addition of donor atoms
to intrinsic semiconductor and indicate the change of Fermi level. Explain the
electrical properties of this kind of materials using band diagrams.
b) State and explain mass action law and continuity equation for semiconductors.

2.

a) Distinguish between drift and diffusion of mobile charge carriers and derive the
units of diffusion coefficient and carrier mobility. Given
p 480cm 2V 1s 1

n 1350cm 2V 1s 1 ,

and ni 1 5 1010 cm 3 in Si at 300 K, calculate the intrinsic

conductivity of Si.
b) Deduce an expression of conductivity() for n-type semiconductor and calculate
the concentration of donor atoms to be added to an intrinsic semiconductor for
obtaining 400 S / m . The electron mobility in the semiconductor =
3.

0 5 m 2V

1 1

a) For a rectifier circuit using diodes define rectification efficiency, ripple factor
and PIV.
b) With neat diagrams explain the operation of half wave rectifier circuit and
estimate the ripple factor and rectification efficiency.

11
4.

a) With neat diagrams explain the operation of full wave rectifier circuit and
estimate the ripple factor and rectification efficiency.
b) Calculate for R f 25 and RL 100 .
c) Explain with necessary diagrams how ripples at the rectifier output are reduced
using a capacitor filter.

5.

a) Show with necessary circuit diagram, how a Zener diode can be used to design
a regulated dc power supply.
b) What are line regulation and load regulation?
c) The adjacent figure shows an electronic voltage
regulator using Zener diode. The Zener diode may
be assumed to require a minimum current of
25 mA

for satisfactory operation. Find the value of

for satisfactory voltage regulation of the

circuit.
6.

a) Draw the circuit diagram of self biasing BJT and state the benefit of voltage
divider. Explain how a self bias circuit gives more stable Q-point of a BJT than fixed
bias.
b) Calculate I B , I C and VCE for 100 (of Si-BJT) VCC 6 V , RB 54 k ,
RC 220 in case of a fixed bias circuit. If the value of RC be changed to 2 2 k ,

estimate I C .
7.

a) Show in a neat labelled diagram the current components in a BJT under normal
biasing and define

and

. If 0 98 , calculate .

b) Explain the mechanism of transistor operation and discuss how a BJT can be
used as an amplifier. If I C 5 mA and I CO 30 A in a BJT of 150 , Calculate I CO .
8.

a) What is Q-point?
b) A Si BJT having 50 , is connected in fixed bias with VCC 12 V
RC 5 k . Find R B to establish VCE 2 V . Assume V BE 0 7 V .

c)

For

the CE amplifier

circuit

shown

below, find the percentage change in

collector current if the transistor with
50 is replaced by another transistor

with 150 . Assume V BE 0 6 V .

and

12
9.

a) Obtain h-parameter equivalent circuit for a BJT under normal bias and write why
the h-parameters are suitable in analysis of BJT circuit operating under small signal
low frequency range.
b) Draw a CE mode BJT amplifier circuit and define voltage gain, input resistance
and output admittance of it.

10. Draw a CE mode BJT amplifier circuit and obtain its small signal low frequency hparameter equivalent. Derive the expressions of amplifier current gain, input
resistance, voltage gain and output impedance. Given
hre 10 4 ,

hoe 50 10 6 S ,

hie 2 k ,

h fe 200 ,

R L 1 k . Calculate the current gain ( A i ), input

resistance ( r i ), voltage gain ( A V ) and output impedance ( r o ).

11. a) What is feedback in amplifier?
b) Derive an expression for the closed loop gain of the amplifier with feedback.
State the assumptions for the derivation.
c) The open loop gain of an amplifier is 100 . What will be the overall gain when
the negative feedback factor is 0 6 ?
12. a) What is the effect of negative feedback on gain stability, input resistance,
output resistance and band width.
b) Discuss positive feedback in amplifier. Obtain Barkhausen condition for self
sustained oscillation and give the idea of positive feedback oscillator.
13. a) What is an OPAMP and what are its characteristics? Compare the properties of a
practical OPAMP with those of ideal one.
b) Draw an inverting amplifier circuit using OPAMP and derive its voltage gain.
c) Calculate the output voltage Vo

of an inverting amplifier for V1 10 mV ,

R1 20 k , V2 200 mV , R2 10 k , V3 300 mV and R3 50 k with R F 50 k ,

where V1 , V2 and V3 are three input signals with resistances R1 , R2 and R3 .

14. a) Draw a basic circuit diagram of non-inverting amplifier using OPAMP and derive
the expression of the output.
b) Draw a circuit diagram of subtractor using OPAMP and derive the working
formula.
c) Explain the working of a comparator circuit using OPAMP.
15. a) Define input offset current and input offset voltage of an OPAMP.
b) What is slew rate and why is it important? The output of a certain OPAMP circuit
changes by 10 V in 2 s . Calculate the slew rate.
c) State the concept of virtual ground. Define CMRR referred to an OPAMP circuit.
For an OPAMP amplifier, common mode gain is 0 1 and differential mode gain is

13
200 . If the input signals are 950 V and 1050 V , calculate the CMRR and the

output voltage.
16. a) Draw a differentiator circuit using an OPAMP and explain its working. Show the
output voltage wave forms for the triangle and square wave input voltages to the
differentiator.
b) Draw the circuit of an integrator using OPAMP and explain its working.
17. a) Explain the operation of a n-channel JFET with suitable diagram for
I) VGS 0

II) VGS 0

III) VGS 0

b) Define the FET parameters , rd and g m . Deduce the relationship among

them.
c) As VGS is changed from 1 V to 1 5 V keeping V DS constant, I D of a FET
drops from 7 mA to 5 mA . What is the trans-conductance of the FET? If the ac
drain resistance is 200 k , find the amplification factor of the FET.
18. Draw a circuit diagram of a common source JFET amplifier and derive the
expression of voltage gain using equivalent circuit. For given

g m 22 m S ,

rd 44 k and R L 5 k , calculate voltage gain (Av) of the amplifier.

19. a) Sketch the basic structure of a depletion type MOSFET and explain its drain
characteristics. State the points of difference between JFET and MOSFET.
b) Explain the functions of the electron gun of a CRT and time base circuit of a
CRO. Discuss various uses of a CRO.
20. a) Sketch a CRT used in a CRO. Label all parts of the CRT and state their functions.
b) Distinguish between dual trace and dual beam CRO.
c) Deduce the expression of vertical defection sensitivity of a CRT.
21. Write short notes :
a) Varactor diode and VCO
b) Fermi Energy and its importance
c) Ebers-Moll model of BJT
d) Frequency response of CE mode BJT amplifier
e) OPAMP as voltage follower
f) Measurement of signal characteristics by CRO.
g) Unity gain buffer using OPAMP
h) Classification of amplifiers
i) Emitter follower and impedance matching
j) BJT biasing and stability of Q-point
k) SCR as saw tooth generator