1.

Silicon diodes are preferred to germanium diodes for high temperature operation because:
Rate of increase of reverse saturation current with temperature is more in case of silicon.
2. In an unbiased P-N junction the current in equilibrium is:
3. In a regulated power supply using zener diode the unregulated input voltage as compared
to the regulated output voltage must be:
4. The diffusion capacitance of a forward biased P-N Junction diode varies:
5. The diffusion capacitance of the P-N junction:
6. A half wave rectified sinusoidal waveform has a peak voltage of 10V. Its average value &
RMS value of the fundamental components are respectively given by:
7. The frequency of ripple in the output voltage of a 3 phase half controlled bridge rectifier
depends on the:
8. The following amplifier configuration yields the largest power gain of all transistor
amplifier configurations:
9. The doping concentrations of N-P-N transistors are:
10.When reverse bias is applied to Gate of JFET the depletion region width:
11.In common source configuration the input resistance of JFET will be approximately:
12.The turn of time of a SCR will be normally of the order of:
13.In MOSFET devices the n channel type is better than p Channel type in the following
aspect:
14.The pinch off voltage for JFET is 4 volts when Vgs=1 volt, the pinch off occurs for Vds
equal to:
15.In a forward biased photo diode with increase in incident light intensity the diode current:
16.The gain of the emitter follower is approximately equal to:
17.The h parameters equivalent circuit of a junction transistor is valid for:
18.The minority carrier current in diode is 5 nA at 25 .C At 45 .C the current will be:
19.Schottky Diode are used in wave shaping circuit because:
20.In full wave rectifier if ac supply frequency is 50hz then ac ripple in the output is:
21.In a center ta circuit, if voltage between one end of secondary winding & center tap is
300V peak, then PIV (Peak Inverse Voltage) is:
22.An ideal regulated power supply should have----regulation:
23.In CE (Common-emitter) amplifier the presence of an un bypassed resistor Re will:
24.Increasing the value of Re in a differential amplifier:
25.The input resistance of an OP Amplifier is increased:
26.The Barkhausen criterion gives:
27.In the RC phase shift oscillator:
28.For a wide range of oscillations in the audio range the perfect oscillator is:
29.In regard to various types of Oscillators:
30.In negative feedback amplifier, the input impedance in increased:
31.In regard to NMOS & PMOS the following statements 1 to 4 are made (1) The carrier
mobility in NMOS is higher (2) PMOS requires less area than NMOS (3) NMOS circuits are
smaller than PMOS (4) PMOS are faster in switching of these, the true statements are:
32.