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2SK2761-01MR

N-channel MOS-FET

FAP-IIS Series

600V

> Features
-

10A

50W

> Outline Drawing

High Speed Switching


Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = 30V Guarantee
Repetitive Avalanche Rated

> Applications
-

Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25C), unless otherwise specified


Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (Tch 150C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range

Symbol
V DS
ID
I D(puls)
V GS
I AR
E AS
PD
T ch
T stg

Rating
600
10
36
30
10
64,7
50
150
-55 ~ +150

Unit
V
A
A
V
A
mJ
W
C
C

- Electrical Characteristics (TC=25C), unless otherwise specified


Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current

Symbol
V (BR)DSS
V GS(th)
I DSS

Gate Source Leakage Current


Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)

I
R
g
C
C
C
t
t
t
t
I
V
t
Q

Turn-Off-Time toff (ton=td(off)+tf)


Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge

- Thermal Characteristics
Item
Thermal Resistance

GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr

Symbol
R th(ch-a)
R th(ch-c)

Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=600V
Tch=25C
VGS=0V
Tch=125C
VGS=30V
VDS=0V
ID=4,5A
VGS=10V
ID=5A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=10A
VGS=10V
RGS=10
Tch=25C
L = 100H
IF=2xIDR VGS=0V Tch=25C
IF=IDR VGS=0V
-dIF/dt=100A/s Tch=25C

Min.
600
3,5

Test conditions
channel to air
channel to case

Min.

Typ.
4,0
10
0,2
10
0,85
6
1100
170
75
25
70
75
40

Max.
4,5
500
1,0
100
1,0
1700
260
120
40
110
120
60

10
1,0
500
6,5

Typ.

Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

1,5

Max.
62,5
2,5

Unit
V
V
A
mA
nA

S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
C

Unit
C/W
C/W

2SK2761-01MR

N-channel MOS-FET
600V

10A

FAP-IIS Series

50W

> Characteristics
Typical Output Characteristics

Drain-Source On-State Resistance vs. Tch

ID=f(VDS); 80s pulse test; TC=25C

ID [A]

RDS(ON) []

VDS [V]

Tch [C]

VGS [V]

Typical Forward Transconductance vs. ID

Gate Threshold Voltage vs. Tch

RDS(on)=f(ID); 80s pulse test; TC=25C

gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C

VGS(th)=f(Tch); ID=1mA; VDS=VGS

ID [A]

Typical Capacitances vs. VDS

VGS(th) [V]

gfs [S]

Tch [C]

Typical Gate Charge Characteristic

IF=f(VSD); 80s pulse test; VGS=0V

VDS [V]

VDS [V]

Qg [nC]

Avalanche Energy Derating

VSD [V]

Zth(ch-c) [K/W]

ID=f(VDS): D=0,01, Tc=25C

Transient Thermal impedance


Zthch=f(t) parameter:D=t/T

12

ID [A]

Eas [mJ]

Starting Tch [C]

Safe Operation Area

Eas=f(starting Tch); VCC=60V; IAV=10A

10

Forward Characteristics of Reverse Diode

VGS=f(Qg); ID=10A; Tc=25C

IF [A]

C=f(VDS); VGS=0V; f=1MHz

VGS [V]

ID [A]

Typical Drain-Source On-State-Resistance vs. ID

RDS(ON) []

ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C

ID [A]

C [F]

Typical Transfer Characteristics

RDS(on) = f(Tch); ID=4,5A; VGS=10V

VDS [V]

This specification is subject to change without notice!

t [s]

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