Академический Документы
Профессиональный Документы
Культура Документы
in Power Systems
I. Kasikci, MIEEE, VDE
University of Applied Sciences of Mannheim, Germany
TeVFax: +49-620 1-I 82301, E-mail: Imail. ~ ~ s i ~ c i i u ! r h ~ i n i i i ~ i n . ~ ~ . i n i l
I. INTRODUCTION
The increased use of non-linear devices cause voltage
distortion in the network. This leads to malfunctions of
the electric facilities and to costly interruptions of
production.
The filter circuit parameters are analysed and described.
This filter configuration provides an alternative
approach to the existing one. According to the test
results, the proposed approach can achieve a complete
elimination of harmonics.
The switched-capacitor active filter was first presented
in 1982 by C.C. Marouchos [ I ] and is fundamentally
different fiom the inverter configuration. The switchedcapacitor configuration removes the requirement for a
large current or voltage source, which leads, not only to
a reduction in cost but also in physical size [2,3].
Another configuration of shunt active filter was
developed in [4]. The major drawback of these circuit is
that the control algorithm is very complicated, time
consuming and produces itself resonances.
As described in [5] a sampling control is used and a load
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Overall
System
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current
Reference
current
Estimator
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Switching
Strategy 4
linear
Load
Measurements
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ion-linear Load
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T-Network
Supply Voltage
Current Controller
(Actual current, Reference current, Switch conditions, P W and Hysterisis controller, Supply
voltage, Load current)
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components ihorm
,which in the absence of the active filter
are present within the supply current
power system. Therefore if
i, = i,
is,
then
polluting the
is = i,
where
tr.
11.
t'
tr
Idv -
= iL
-1,
= i,
+i,
-i,
+T,)
(3)
is
= 2(Ts
(1)
(4)
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inverter
601
fs '20 f r .
The filter capacitor
SUDDIV
(7)
c, should be:
c, 210- Ls +Lp T 2 s .
SUDDIV
Ls L,
0,
R,
= 0.15
LSLP
;/=.
cF(LS
10,o
20.0
30,O
40,C
(9)
+ Lp)
Ts I-
compensation
The advantages of the bipolar transistors and the
MOSFETs are combined in the Insulated Gate Bipolar
Transistor. The bipolar transistor has lower on-state power
losses when switched on, particularly for high-gate types.
The power MOSFETs are quick and can be switched on
and off especially at high switching frequencies, but their
on-state power loss are distinctly higher at high-gate types.
The actuation of MOSFETs is much easier than the one of
a bipolar transistor. The measured values of the main
network harmonic current is fed into the network model
and simulated. Fig.5, 6 and 7 illustrate significant
reduction of the harmonics before and after the
compensation. When examining the control method of
power converters, the permissible switching frequency for
the semi-conductor is of great importance. It substantially
affects the approximation of voltage and current curves of
the converter to the ideal design value.
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VI. REFERENCES
[1] Marouchos C.C., Switched Capacitor Circuits For Reactive
Power Generation, PhD Thesis, 1982.
[2] Mehta P., Darwish M., Thomson T., Switched Capacitor
II
Fig. 1 1 : Bode diagram of the transfer hnction
V. CONCLUSIONS
- 8 15 -