Opto

Phase
Precision micro diamond scriber MR 200
for manual scribing and cutting of structured silicon wafers

preparations in semiconductor
technology
The structure and the equipment of the MR 200 make
the highly exact cutting and breaking possible of
structured silicon wafers. Particularly for REM-preparations within the
semiconductor technology the MR 200
is an indispensable aid. The use for
the sort of chips is possible for small
numbers o tems particularly in the
laboratory range likewise.

Ultra accurate cutting,

simple handling
After positioning the substrate (or
a piece of the wafer, minimum size 20 mm20 mm)
on the wafer chuck the microscope is focused on the
wafer surface. By manual driving of the table into
y-direction (cutting line) and adjustment both the

tion and the angle position with reference marks or

structures.
The high-quality 4-zoom microscope makes the step
less change possible between overview and detail
representation on the test specimen surface. With
highly exact positioned. The cutting
strength can be adapted to the material which can be cut, as the pressure
to the cutting diamond is adjusted by
a valve. During the cutting procedure
takes place, the sinking or rise of
the cutting diamond is controlled
by means o oot switches, so that
the manual cutting movement with
both hands can be steered. The setup point of the cutting diamond can
be adjusted. The eyepiece hair cross
should thereby indicate the set-up
point of the cutting diamonds.
The chuck can be turned with switched on vacuum
accurately around 90, so that exactly running cutting
lines can be produced perpendicularly to each other.

lowered pneumatically by manipulation of the foot

switch. For cutting the complete vacuum chuck is
shifted by hand. The cutting procedure can be observed in the microscope. According to the materials to
be scribed, the cutting strength can be adjusted in
a wide range. A video system for the microscope is
optionally available, so that the wafer positioning at
the monitor can be observed.

4
Pictures:
Technical parameters
di mensi ons appr. 400 mm800 mm600 mm ( WDH)

scribing and cutting lines

wei ght appr. 20 kg, st abl e basi c f rame

cont rol of t he scr i bi ng di amond by f oot- swi t ch ( set down/ set up)
adj ust abl e scr i bi ng power ( by ai r pressure val ve)
adj ust abl e l ower i ng speed f or scr i bi ng di amond
adj ust abl e hei ght of scr i bi ng di amond ( f or di f f erent speci men
thicknesses)
hi gh qual i t y 4 - zoom mi croscope wi t h st ep l ess adj ust ment of
exe pi ece cross hai r f or exact adj ust ment of t he scr i bi ng l i ne
according reference marks, structures, edges or others
vacuum- waf erchuck, di amet er 100 mm/ 200 mm wi t h angl e- rough- /

break through a single transistor with a size of

7 m 7 m. (Source: IHP GmbH Frankfurt (Oder),
2007)
3 ar r ay of s i ngl e t r ans i s t or s , t ot al s i ze
55 m 55 m: The MR 200 makes it possible
to cut the wafer with such high precision, that
the break runs absolute exactly through a single
transistor (size 7 m 7 m) of the array (Source:
IHP GmbH Frankfurt (Oder), 2007)
4 s cr i bi ng di amond

manual x/ y- t abl e, ef f ect i ve st roke ( 200 mm200 mm) wi t h 10 mm

OPTOPHASE

maxi mum scr i bi ng di st ance: 200 mm

Measuring instruments for optical parameters

MTF-measuring instruments

max. 6 bar ai r pressure necessar y ( f or Si - waf ers appr. 1. 9 bar used)

i nt ernal vacuum generat i on by pressure ai r
col d l i ght source wi t h r i ng l i ght , power suppl y: 220 V
waf er t hi ckness : al l st andard t hi cknesses f or Si - waf er
mat er i al s : si l i con, sapphi re ( ot her mat er i al s possi bl e, but not
vi deo syst em/ i mage processi ng i s avai l abl e as assembl y group
alternatively

Special optical measuring instruments

149 Rue Bataille
69008 LYON
France
Phone +33 478742456
E-Mail info@optophase.com
Internet www.optophase.com