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-22
0
AC
BYC8-600
1. General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
3. Applications
Symbol
Parameter
VRRM
IF(AV)
average forward
current
Conditions
Min
Typ
Max
Unit
600
IF = 8 A; Tj = 150 C; Fig. 4
1.4
1.85
19
ns
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
Tj = 25 C; Fig. 5
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BYC8-600
NXP Semiconductors
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
cathode
Graphic symbol
mb
A
001aaa020
anode
mb
mb
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Type number
Package
BYC8-600
Name
Description
Version
TO-220AC
SOD59
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
600
VRWM
600
IF(AV)
16
60
55
IFRM
IFSM
Tstg
storage temperature
-40
150
Tj
junction temperature
150
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NXP Semiconductors
003aab472
30
Ptot
(W)
25
003aab471
20
Ptot
(W)
=1
a = 1.57
1.9
16
2.2
0.5
20
2.8
12
4.0
0.2
15
0.1
10
4
5
0
Fig. 1.
IF(AV) (A)
12
Fig. 2.
IF(AV) (A)
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 3
2.2
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
60
K/W
003aac977
10
Zth(j-mb)
(K/W)
1
10- 1
tp
T
10- 2
tp
10- 3
10- 6
Fig. 3.
10- 5
10- 4
10- 3
10- 2
t
T
10- 1
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse width
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NXP Semiconductors
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 8 A; Tj = 25 C
2.9
IF = 8 A; Tj = 150 C; Fig. 4
1.4
1.85
IF = 16 A; Tj = 150 C
1.7
2.3
VR = 600 V; Tj = 25 C
150
VR = 500 V; Tj = 100 C
1.1
mA
12
nC
30
52
ns
19
ns
32
40
ns
1.5
5.5
9.5
12
10
Static characteristics
VF
IR
forward voltage
reverse current
Dynamic characteristics
Qr
recovered charge
Tj = 25 C
trr
IF = 1 A; VR = 30 V; dIF/dt = 50 A/s;
Tj = 25 C
IF = 8 A; VR = 400 V; dIF/dt = 500 A/s;
Tj = 25 C; Fig. 5
IF = 8 A; VR = 400 V; dIF/dt = 500 A/s;
Tj = 100 C
IRM
VFR
forward recovery
voltage
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NXP Semiconductors
003aac976
20
IF
IF
(A)
dlF
dt
16
trr
12
time
25 %
(1)
(2)
(3)
100 %
Qr
4
IR
Fig. 4.
IRM
003aac562
VF (V)
Fig. 5.
IF
time
VF
VFRM
VF
time
001aab912
Fig. 6.
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SOD59
A
A1
q
D1
D
H
Q
b1
L
2
c
b
e
Dimensions
Unit
mm
max
nom
min
10 mm
scale
A
A1
b1(1)
D1
4.7
1.40 0.95
1.7
0.65 15.8
6.8 10.30
4.3
1.15 0.70
1.3
0.45 15.6
6.4
9.65
5.08
(REF)
2.6
2.9
2.2
2.7
Note
1. Protruded dambar are included in the dimension.
Outline
version
SOD59
Fig. 7.
sod059_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-08-25
12-11-27
2-lead TO-220AC
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NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Preliminary
[short] data
sheet
Qualification
Product
[short] data
sheet
Production
[1]
[2]
[3]
Definition
11.2 Definitions
Preview The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warranty and liability Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
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11.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
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12. Contents
1
Applications ........................................................... 1
Characteristics ....................................................... 4
10
11
11.1
11.2
11.3
11.4
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