UNISONIC TECHNOLOGIES CO.

, LTD
4N60

Power MOSFET

4A, 600V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 4N60 is a high voltage power MOSFET and is

designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES

* RDS(ON) < 2.5 @ VGS = 10 V, ID = 2.2A

* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness

SYMBOL

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Copyright 2015 Unisonic Technologies Co., Ltd

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Power MOSFET

ORDERING INFORMATION

Ordering Number
Package
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
TO-220
4N60L-TF1-T
4N60G-TF1-T
TO-220F1
4N60L-TF2-T
4N60G-TF2-T
TO-220F2
4N60L-TF3-T
4N60G-TF3-T
TO-220F
4N60L-TF3T-T
4N60G-TF3T-T
TO-220F3
4N60L-TM3-T
4N60G-TM3-T
TO-251
4N60L-TMS-T
4N60G-TMS-T
TO-251S
4N60L-TN3-R
4N60G-TN3-R
TO-252
4N60L-TND-R
4N60G-TND-R
TO-252D
4N60L-T2Q-T
4N60G-T2Q-T
TO-262
4N60L-TQ2-T
4N60G-TQ2-T
TO-263
4N60L-TQ2-R
4N60G-TQ2-R
TO-263
4N60G-K08-5060-R
DFN-8(56)
Note: Pin Assignment: G: Gate D: Drain S: Source

1
G
G
G
G
G
G
G
G
G
G
G
G
S

2
D
D
D
D
D
D
D
D
D
D
D
D
S

Pin Assignment
3
4
5
6
S
S
S
S
S
S
S
S
S
S
S
S
S G D D

7
D

8
D

Packing
Tube
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Tube
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Tape Reel
Tape Reel
Tube
Tube
Tape Reel
Tape Reel

MARKING
PACKAGE
TO-220
TO-251S
TO-220F
TO-252
TO-220F1
TO-252D
TO-220F2
TO-262
TO-220F3
TO-263
TO-251

MARKING

DFN-8(56)

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ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
30
V
Avalanche Current (Note 2)
IAR
4.4
A
4.0
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
16
A
260
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
36
TO-220F3
Power Dissipation
TO-220F2
PD
38
W
TO-251/TO-251S
50
TO-252/TO-252D
DFN-8(56)
30
Junction Temperature
TJ
+150

Operating Temperature
TOPR
-55 ~ +150

Storage Temperature
TSTG
-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C
4. ISD4.4A, di/dt 200A/s, VDDBVDSS, Starting TJ = 25C

THERMAL DATA
PARAMETER

Junction to Ambient

Junction to Case

PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
DFN-8(56)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
DFN-8(56)

SYMBOL

UNISONIC TECHNOLOGIES CO., LTD

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RATINGS

UNIT

62.5
JA

/W
110
75
1.18
3.47

JC

3.28

/W

2.5
4.17

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ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)

PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

SYMBOL
BVDSS

TEST CONDITIONS

VGS = 0V, ID = 250A

VDS = 600V, VGS = 0V
Drain-Source Leakage Current
IDSS
VDS = 480V, TC = 125
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250A,Referenced to 25C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250A
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 300V, ID = 4.0A,
RG = 25 (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 480V,ID= 4.0A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 4.4A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 4.4A,
dIF/dt = 100 A/s (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width300s, Duty cycle2%
2. Essentially independent of operating temperature

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MIN TYP MAX UNIT

600

0.6

V
10
A
100 A
100 nA
-100 nA
V/

1.9

4.0
2.5

550
80
30

670
100
50

pF
pF
pF

35
80
160
120
80
5
20

55
110
200
150
100

ns
ns
ns
ns
nC
nC
nC

1.4

4.4

17.6

2.0

250
1.5

ns
C

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TEST CIRCUITS AND WAVEFORMS

D.U.T.

+
VDS
-

+
-

RG
Driver
VGS

VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test

Same Type
as D.U.T.

Peak Diode Recovery dv/dt Test Circuit

VGS
(Driver)

Period

D=

P.W.

P. W.
Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS

90%

VGS

10%
tD(ON)

tD(OFF)
tF

tR

Switching Test Circuit

Switching Waveforms

VGS
QG

10V
QGS

QGD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BVDSS
IAS

ID(t)

VDS(t)

VDD

tp

Unclamped Inductive Switching Test Circuit

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Time

Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS

Drain-Source On-Resistance,
RDS(ON) (Normalized) ()

Drain-Source Breakdown Voltage,

BVDSS (Normalized) (V)

Power MOSFET

On-State Characteristics
10

VGS
10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V

Transfer Characteristics
10

Top:

25

5.0V

150

0.1

Notes:
1. 250s Pulse Test
2. TC=25

0.1

10

Drain-to-Source Voltage, VDS (V)

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Notes:
1. VDS=50V
2. 250s Pulse Test

0.1
2

10

Gate-Source Voltage, VGS (V)

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TYPICAL CHARACTERISTICS(Cont.)

Capacitance Characteristics
(Non-Repetitive)
1200
1000

12
10

Ciss

800
600

Gate Charge Characteristics

Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd

Coss

Notes:
1. VGS=0V
2. f = 1MHz

0
0.1

VDS=120V

6
4

400
200

VDS=300V
VDS=480V

Crss

Note: ID=4A

0
1

10

10

15

20

25

Total Gate Charge, QG (nC)

Drain-SourceVoltage, VDS (V)

PD (w)

Thermal Response, JC (t)

Power MOSFET

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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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