Lecture 5 - P-N Junction Injection and Flow - Outline: - Review

6.
012 - Electronic Devices and Circuits
Lecture 5 - p-n Junction Injection and Flow - Outline
Review
Depletion approximation for an abrupt p-n junction
Depletion charge storage and depletion capacitance
(Rec. Fri.)
qDP(vAB) = AqNApxp = A[2q(b-vAB){NApNDn/(NAp+NDn)}]1/2

Cdp(VAB) qDP/ vAB|VAB = A[q{NApNDn/(NAp+NDn)}/2(b-VAB)]1/2
Biased p-n Diodes

Depletion regions change
Currents flow: two components
flow issues in quasi-neutral regions
boundary conditions on p' and n' at -xp and xn
(Lecture 4)
(Today)
(Lecture 6)
Minority carrier flow in quasi-neutral regions

The importance of minority carrier diffusion
Boundary conditions
Minority carrier profiles and currents in QNRs
Short base situations
Long base situations
Intermediate situations
Clif Fonstad, 9/24/09
Lecture 5 - Slide 1
The Depletion Approximation: an informed first estimate of (x)

Assume full depletion for -xp < x < xn, where xp and xn are
two unknowns yet to be determined. This leads to:
$ 0
&
&#qN Ap
"(x) = %
& qN Dn
&
' 0
for
x < #x p
for #x p < x < 0
for 0 < x < x n
for
xn < x
(x)
qNDn
-xp
x
xn
-qNAp
Integrating the charge once gives the electric field
$
0
!
& qN
&" Ap ( x + x p )
& #
Si
E(x) = %
& qN Dn ( x " x )
n
& #Si
&
0
'
for
x < "x p
for
" xp < x < 0
-xp
(x)
xn
for
0 < x < xn
for
xn < x
E(0) = -qNApxp/Si
= -qNDnxn/Si
Lecture 5 - Slide 2
The Depletion Approximation, cont.:
Integrating again gives the electrostatic potential:
%
"p
'
qN Ap
2
' "p +
x + xp)
(
'
2$Si
" (x) = &
' " # qN Dn ( x # x ) 2
n
' n 2$Si
'(
"n
for
x < #x p
for
- xp < x < 0
(x)
n
-xp
x
for
for
xn
0 < x < xn
p
(0) = p + qNApxp 2/2Si
= n qNDnxn2/2Si
xn < x
Insisting E(x) is continuous at x = 0 yields our first
-x
equation relating our unknowns, xn and xp:
(x)
N Ap x p = N Dn x n
xn
Requiring that the potential be continuous at x = 0 gives

us our second relationship between xn and xp:
!
qN Ap 2
qN Dn 2
"p +
x p = "n $
xn
2#Si
2#Si
E(0) = -qNApxp/Si
= -qNDnxn/Si
2
Lecture 5 - Slide 3
Comparing the depletion approximation

with a full solution:
Example: An unbiased abrupt p-n junction
with NAp= 1017 cm-3, NDn= 5 x 1016 cm-3
Charge
Potential
po(x), no(x)
nieq(x)/kT
E-field
Lecture 5 - Slide 4
Courtesy of Prof. Peter Hagelstein. Used with permission.
Depletion approximation: Applied bias

Forward bias, vAB > 0:
vAB
-wp
(b-vAB)
x
-xp 0 xn
Reverse bias, vAB < 0:
vAB
wn
-wp
(b-vAB) -xp 0 xn
No drop
in wire
No drop
at contact
wn No drop
in wire
No drop
in QNR
No drop
in QNR
No drop
at contact
In a well built diode, all the applied

voltage appears as a change in the
the voltage step crossing the SCL
Note: With applied bias we are no longer in thermal equilibrium so

it is no longer true that n(x) = ni eq(x)/kT and p(x) = ni e-q(x)/kT.
Lecture 5 - Slide 5
The Depletion Approximation: Applied bias, cont.
Adding vAB to our earlier sketches: assume reverse bias, vAB < 0
2"Si (# b $ v AB ) ( N Ap + N Dn )
w=
q
N Ap N Dn
(x)
qNDn
-xp
xp
xn
xn
-qNAp
N Ap w
N Dn w
xp =
, xn =
(N Ap + N Dn )
(N Ap + N Dn )
(x)
-xp
xn
|Epk|
E pk
2q (" b # v AB ) N Ap N Dn
=
$Si
(N Ap + N Dn )
(x)
-xp
(b-vAB)
x
xn
"# = # b $ v AB
and
kT N Dn N Ap
#b =
ln
q
n i2
Lecture 5 - Slide 6
The Depletion Approximation: comparison cont.

Example: Same sample, reverse
biased -2.4 V
Charge
E-field
Potential
p (x)
n (x)
nieq(x)/kT
Lecture 5 - Slide 7
The Depletion Approximation: comparison cont.

Example: Same sample, forward
biased 0.6 V
Charge
E-field
Potential
p (x)
n (x)
nieq(x)/kT
Lecture 5 - Slide 8
The value of the depletion approximation

The plots look good, but equally important is that
1. It gives an excellent model for making hand calculations
and gives us good values for quantities we care about:
Depletion region width
Peak electric field
Potential step
2. It gives us the proper dependences of these quantities on

the doping levels (relative and absolute) and the bias voltage.
Apply bias; what happens?

Two things happen
1. The depletion width changes
(b - vAB) replaces b in the Depletion Approximation Eqs.
2. Currents flow
This is the main topic of todays lecture
Lecture 5 - Slide 9
Depletion capacitance: Comparing depletion charge stores with a
parallel plate capacitor

(x)
(x)
qNDn
qA
qB
( = -qA)
-xp
d/2
xn
qA
-d/2
-qNAp
qB( = -qA)
Depletion region charge store
Parallel plate capacitor
qA,PP
$qA,PP
C pp (VAB ) #
$v AB
A"
=
d
qA,DP (v AB ) = "AqN Ap x p (v AB )
"
= A v AB
d
= "A 2q#Si [$ b " v AB ]

v AB =VAB
Cdp (VAB ) %
Many similarities;
important differences.
= A
&qA,DP
&v AB
N Ap N Dn
[N
Ap
+ N Dn ]
v AB =VAB
N Ap N Dn
q#Si
2[$ b " VAB ] [ N Ap + N Dn ]
A #Si
w(VAB )
Lecture 5 - Slide 10
Bias applied, cont.: With vAB 0, it is not true that n(x) = ni eq(x)/kT
and p(x) = ni e-q(x)/kT because we are no longer in TE. However,
outside of the depletion region things are in quasi-equilibrium, and
we can define local electrostatic potentials for which the equilibrium
relationships hold for the majority carriers, assuming LLI.
QNRp
Forward bias, vAB > 0:

vAB
vAB
-wp
(b-vAB)
-xp
vAB
-wp
vAB
0 xn
QNRp
Reverse bias, vAB < 0:

vAB
QNRn
wn
QNRn
(b-vAB)
vAB
-xp 0 xn
vAB
x
wn
vAB
In this region p(x) ni e-qQNRp/kT

In this region n(x) ni eqQNRn/kT

Current Flow
Unbiased
junction
Population in
equilibrium with
barrier
x
q
Forward bias
on junction
Barrier lowered so
carriers to left can
cross over it.
x
q
Reverse bias
on junction
Barrier raised so the
few carriers on top
spill back down it.
x
Current flow: finding the relationship between iD and vAB

There are two pieces to the problem:
Minority carrier flow in the QNRs is what limits the current.
Carrier equilibrium across the SCR determines n'(-xp) and p'(xn),
the boundary conditions of the QNR minority carrier flow problems.
Ohmic
contact
A
+
iD
Uniform p-type
Uniform n-type
vAB
-wp
-xp 0 xn
Quasineutral
region I
Minority carrier flow
here determines the
electron current
- Today's Lecture -
Ohmic
contact
Space charge
region
The values of n' at

-xp and p' at xn are
established here.
- Lecture 6 -
wn
Quasineutral
region II
here determines the
hole current
- Today's Lecture -
Solving the five equations: special cases we can handle

1. Uniform doping, thermal equilibrium (nopo product, no, po):
"
"
= 0,
= 0, gL (x,t) = 0, J e = J h = 0
"x
"t
Lecture 1
2. Uniform doping and E-field (drift conduction, Ohms law):
"
"
= 0,
= 0, gL (x,t) = 0, E x constant
"x
"t
Lecture 1
3. Uniform doping and uniform low level optical injection (min):
"
= 0, gL (t), n' << po
"x
Lecture 2
3'. Uniform doping, optical injection, and E-field (photoconductivity):
"
= 0, E x constant, gL (t)
"x
Lecture 2
4. Non-uniform doping in thermal equilibrium (junctions, interfaces)
"
= 0, gL (x,t) = 0, J e = J h = 0
"t
5. Uniform doping, non-uniform LL injection (QNR diffusion)
"N d "N a
"n' "
=
= 0, n' # p', n' << p o , J e # qDe
,
#0
"x! "x
"x "t
Lectures 3,4
TODAY
Lecture 5
QNR Flow: Uniform doping, non-uniform LL injection

What we have:
Five things we care about (i.e. want to know):

p(x,t) and n(x,t)
Hole and electron concentrations:
Hole and electron currents:
J hx (x,t) and J ex (x,t)
Electric field:
E x (x,t)
And, five equations relating them:
"p(x,t) 1 "J h (x,t)

+!
= G # R $ Gext (x,t) # [ n(x,t) p(x,t) # n i2 ] r(t)
"t
q "x
Electron continuity:
"n(x,t) # 1 "J e (x,t) = G # R $ Gext (x,t) # [ n(x,t) p(x,t) # n i2 ] r(t)
"t
q "x
"p(x,t)
Hole current density: J h (x,t) = q h p(x,t)E(x,t) # qDh
"x
"n(x,t)
Electron current density:
J e (x,t) = q e n(x,t)E(x,t) + qDe
"x
" [&(x)E x (x,t)]
Charge conservation:
%(x,t) =
$ q[ p(x,t) # n(x,t) + N d (x) # N a (x)]
"x
Hole continuity:
We can get approximate analytical solutions if 5 conditions are met!

QNR Flow, cont.: Uniform doping, non-uniform LL injection

Five unknowns, five equations, five flow problem conditions:
1. Uniform doping
dn o dpo
#n #n' #p #p'
=
=0 "
=
,
=
dx
dx
#x #x #x #x
po " n o + N d " N a = 0 # $ = q( p " n + N d " N a ) = q( p'"n')
n'
n'<< po " ( np # n ) r $ n' po r =
(in p-type, for example)
%e
3. Quasineutrality holds
n' " p', #n' " #p'
# x #x
#n'(x,t)
4. Minority carrier!drift is negligible
J e (x,t) " qDe
#x
(continuing to assume p-type)
!
Note: It is also always true that
"n "n'
"p "p'
=
,
=
"t "t
! "t "t
2. Low level injection
!
2
i

With these first four conditions our five equations become:
(assuming for purposes of discussion that we have a p-type sample)
1,2 :
3:
4:
5:
"p'(x,t) 1 "J h (x,t)

"n'(x,t) 1 "J e (x,t)
n'(x,t)
+
=
#
= gL (x,t) #
"t
q "x
"t
q "x
$e
"n'(x,t)
J e (x,t) % +qDe
"x
"p'(x,t)
J h (x,t) = q h p(x,t)E(x,t) + qDh
"x
"E(x,t) q
= [ p'(x,t) # n'(x,t)]
"x
&
In preparation for continuing to our fifth condition, we note

that combining Equations 1 and 3 yields one equation in
n'(x,t):
2
"n'(x,t)
" n'(x,t)
n'(x,t)
# De
=
g
(x,t)
#
L
"t
"x 2
$e
The time dependent diffusion equation


The time dependent diffusion equation, which is repeated
below, is in general still very difficult to solve
"n'(x,t)
" 2 n'(x,t)
n'(x,t)
# De
=
g
(x,t)
#
L
"t
"x 2
$e
but things get much easier if we impose a fifth constraint:
5. Quasi-static excitation
gL (x,t) such that all
"
# 0
"t
!
With this constraint the above equation becomes a second
order linear differential equation:

2
d
n'(x)
n'(x)
!
"De
= gL (x) "
2
dx
#e
which in turn becomes, after rearranging the terms :
d 2 n'(x)
n'(x)
1
"
=
"
gL (x)
2
dx
De # e
De
The steady state diffusion equation
QNR Flow, cont.: Solving the steady state diffusion equation
The steady state diffusion equation in p-type material is:
d 2 n'(x)
n'(x)
1
"
=
"
gL (x)
2
2
dx
Le
De
and for n-type material it is:
d 2 p'(x)
p'(x)
1
"
=
"
gL (x)
2
2
dx
Lh
Dh
In writing these expressions we have introduced Le and Lh,

the minority carrier diffusion lengths for holes and
electrons, as:
Lh " Dh # h
Le " De # e
We'll see that the minority carrier diffusion length tells us how
far the average minority carrier diffuses before it recombines.
In a basic p-n
! diode, we have gL!= 0 which means we only need
the homogenous solutions, i.e. expressions that satisfy:
n-side: d 2 p'(x)
dx 2
p'(x)
"
= 0
2
Lh
p-side:
d 2 n'(x)
n'(x)
"
= 0
2
2
dx
Le
For convenience, we focus on the n-side to start with and

find p'(x) for xn x wn. p'(x) satisfies
d 2 p'(x)
p'(x)
=
dx 2
L2h
subject to the boundary conditions:
p'(w n ) = 0 and p'(x n ) = something we'll find next time
!
The general solution to this static diffusion equation is:
p'(x) = Ae"x L h + Be +x L h
where A and B are constants that satisfy the boundary

conditions. Solving for them and putting them into this
equation yields the final general result:
"( w n "x n ) L h
p'(x n )e( wn "x n ) Lh
p'(x
)e
"( x"x n ) L h
+( x"x n ) L h
n
p'(x) = ( wn "x n ) Lh
e
"
e
e
" e"( wn "x n ) Lh
e( wn "x n ) Lh " e"( wn "x n ) Lh
for x n # x # w n

We seldom care about this general result. Instead, we find
that most diodes fall into one of two cases:
Case I - Long-base diode: wn >> Lh
Case II - Short-base diode: Lh >> wn
Case I: When wn >> Lh, which is the situation in an LED, for
example, the solution is
p'(x) " p'(x n )e#( x#x n ) L h for
x n $ x $ wn
This profile decays from p'(xn) to 0 exponentially as e-x//Lh.
The
! corresponding hole current for xn x wn in Case I is
dp'(x) qDh
J h (x) " #qDh
=
p'(x n )e#( x#x n ) Lh
dx
Lh
for x n $ x $ w n
The current decays to zero also, indicating that all of the excess
minority carriers have recombined before getting to the contact.
Case II: When Lh >> wn, which is the situation in integrated

Si diodes, for example, the differential equation simplifies
to:
d 2 p'(x)
p'(x)
dx
2
h
" 0
We see immediately that p'(x) is linear:
p'(x) = A x + B
Fitting the boundary conditions we find:
* $ x # x 'n
p'(x) " p'(x n ),1# &
)/! for x n 0 x 0 w n
+ % w n # x n (.
This profile is a straight line, decreasing from p'(xn) at xn to 0 at wn.
In Case II the current is constant for xn x wn:
dp'(x)
qDh
J h (x) " #qDh
=
p'(x n )
dx
wn # x n
for
x n $ x $ wn
The constant current indicates that no carriers recombine

before reaching the contact.

Sketching and comparing the limiting cases: wn>>Lh, wn<<Lh
Case I - Long base: wn >> Ln (the situation in LEDs)
p'n(x) [cm-3]
p'n(xn)
Jh(x) [A/cm2]
qDhp'n(xn) Lh
e-x/Lh
xn
xn+Lh
wn
x [cm-3]
e-x/Lh
xn
xn+Lh
wn
x [cm-3]
Case II - Short base: wn << Ln (the situation in most Si diodes and transistors)
p'n(x) [cm-3]
p'n(xn)
Jh(x) [A/cm2]
qDhp'n(xn) [wn-xn]
xn
wn
x [cm-3]
xn
wn
x [cm-3]

The four other unknowns
Solving the steady state diffusion equation gives n.
Knowing n'..... we can easily get p, Je, Jh, and Ex:
First find Je:
Then find Jh:
!
Next find Ex:
!
J e (x) " qDe
dn'(t)
dx
J h (x) = JTot " J e (x)
'
1 $
Dh
E x (x) "
J e (x))
&J h (x) #
q h po %
De
(
# dE x (x)
q dx
!
Finally, go back and check that all of the five conditions are
met by the solution.
Then find p:
p'(x) " n'(x) +
Once
! we solve the diffusion equation to get
the minority excess, n', we know everything.
Current flow: finding the relationship between iD and vAB

There are two pieces to the problem:
Minority carrier flow in the QNRs is what limits the current.
Carrier equilibrium across the SCR determines n'(-xp) and p'(xn),
the boundary conditions of the QNR minority carrier flow problems.
Ohmic
contact
A
+
iD
Uniform p-type
Uniform n-type
vAB
-wp
-xp 0 xn
Quasineutral
region I
here determines the
electron current
Ohmic
contact
Space charge
region
The values of n' at

-xp and p' at xn are
established here.
- Lecture 6 next Tuesday -
wn
Quasineutral
region II
here determines the
hole current
The p-n Junction Diode: the game plan for getting iD(vAB)
We have two QNR's and a flow problem in each:
Quasineutral
region I
Ohmic
contact
A
+
iD
Quasineutral
region II
Ohmic
contact
vAB
x
-wp
-xp 0
n'(-xp) = ?
x
0 xn
n'p
wn
p'n
p'(xn) = ?
p'(wn) = 0
n'(-wp) = 0
x
-wp
-xp 0
x
0 xn
wn
If we knew n'(-xp) and p'(xn), we could solve the flow problems

and we could get n'(x) for -wp<x<-xp, and p'(x) for xn<x<wn
.and knowing n'(x) for -wp<x<-xp, and p'(x) for xn<x<wn,

we can find Je(x) for -wp<x<-xp, and Jh(x) for xn<x<wn.
n'(-xp,vAB) = ?
n' p
p' n
p'(xn,vAB) = ?
p'(wn) = 0
n'(-wp) = 0
-xp 0 x
-wp
Je(-wp<x<-xp)=qDe(dn'/dx)
-wp
Je
0 xn
wn
Jh
Jh(xn<x<wn)=-qDh(dp'/dx)
-xp 0
0 xn
wn
Having Je(x) for -wp<x<-xp, and Jh(x) for xn<x<wn, we can get iD
because we will argue that iD(vAB) = A[Je(-xp,vAB)+Jh(xn,vAB)]
but first we need to know n'(-xp,vAB) and p'(xn,vAB).
We will do this in Lecture 6.
6.012 - Electronic Devices and Circuits
Lecture 5 - p-n Junction Injection and Flow - Summary
Biased p-n Diodes

Depletion regions change
Currents flow: two components
(Lecture 4)
flow issues in quasi-neutral regions

boundary conditions on p' and n' at -xp and xn
Minority carrier flow in quasi-neutral regions

The importance of minority carrier diffusion
minority carrier drift is negligible
Boundary conditions
Minority carrier profiles and currents in QNRs
Short base situations

Long base situations
Carrier populations across the depletion region
(Lecture 6)
Potential barriers and carrier populations

Relating minority populations at -xp and xn to vAB
Excess minority carriers at -xp and xn
MIT OpenCourseWare
http://ocw.mit.edu
6.012 Microelectronic Devices and Circuits

Fall 2009
For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

Lecture 5 - P-N Junction Injection and Flow - Outline: - Review

Загружено:

Сведения о документе

Оригинальное название

Авторское право

Доступные форматы

Поделиться этим документом

Поделиться или встроить документ

Параметры публикации

Этот документ был вам полезен?

Это неприемлемый материал?

Авторское право:

Доступные форматы

Lecture 5 - P-N Junction Injection and Flow - Outline: - Review

Загружено:

Авторское право:

Доступные форматы

6.

012 - Electronic Devices and Circuits

Lecture 5 - p-n Junction Injection and Flow - Outline

qDP(vAB) = AqNApxp = A[2q(b-vAB){NApNDn/(NAp+NDn)}]1/2

Biased p-n Diodes

Minority carrier flow in quasi-neutral regions

The Depletion Approximation: an informed first estimate of (x)

Integrating the charge once gives the electric field

" xp < x < 0

The Depletion Approximation, cont.:

Integrating again gives the electrostatic potential:

Insisting E(x) is continuous at x = 0 yields our first

Requiring that the potential be continuous at x = 0 gives

Comparing the depletion approximation

with NAp= 1017 cm-3, NDn= 5 x 1016 cm-3

Clif Fonstad, 9/24/09

Courtesy of Prof. Peter Hagelstein. Used with permission.

Depletion approximation: Applied bias

Reverse bias, vAB < 0:

In a well built diode, all the applied

Note: With applied bias we are no longer in thermal equilibrium so

The Depletion Approximation: Applied bias, cont.

Clif Fonstad, 9/24/09

The Depletion Approximation: comparison cont.

Clif Fonstad, 9/24/09

Courtesy of Prof. Peter Hagelstein. Used with permission.

The Depletion Approximation: comparison cont.

Clif Fonstad, 9/24/09

Courtesy of Prof. Peter Hagelstein. Used with permission.

The value of the depletion approximation

2. It gives us the proper dependences of these quantities on

Apply bias; what happens?

Depletion capacitance: Comparing depletion charge stores with a

parallel plate capacitor

Depletion region charge store

Parallel plate capacitor

= "A 2q#Si [$ b " v AB ]

Clif Fonstad, 9/24/09

Forward bias, vAB > 0:

Reverse bias, vAB < 0:

In this region p(x) ni e-qQNRp/kT

In this region n(x) ni eqQNRn/kT

carriers to left can

cross over it.

Barrier raised so the

few carriers on top

spill back down it.

Current flow: finding the relationship between iD and vAB

Clif Fonstad, 9/24/09

The values of n' at

Solving the five equations: special cases we can handle

2. Uniform doping and E-field (drift conduction, Ohms law):

3. Uniform doping and uniform low level optical injection (min):

3'. Uniform doping, optical injection, and E-field (photoconductivity):

4. Non-uniform doping in thermal equilibrium (junctions, interfaces)

5. Uniform doping, non-uniform LL injection (QNR diffusion)

Clif Fonstad, 9/24/09

QNR Flow: Uniform doping, non-uniform LL injection

Five things we care about (i.e. want to know):

"p(x,t) 1 "J h (x,t)

We can get approximate analytical solutions if 5 conditions are met!

QNR Flow, cont.: Uniform doping, non-uniform LL injection

po " n o + N d " N a = 0 # $ = q( p " n + N d " N a ) = q( p'"n')