Академический Документы
Профессиональный Документы
Культура Документы
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS EFET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
TM
S
CASE 221A06, Style 5
TO220AB
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc
VGS
VGSM
20
25
Vdc
Vpk
ID
ID
IDM
52
41
182
Adc
PD
188
1.25
Watts
W/C
TJ, Tstg
55 to 175
EAS
406
mJ
RJC
RJA
0.8
62.5
C/W
TL
260
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
Apk
Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
EFET, Designers, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
TMOS
Motorola
Motorola, Inc.
1996
MTP52N06V
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
66
Vdc
mV/C
10
100
100
nAdc
2.0
2.7
6.4
4.0
Vdc
mV/C
0.019
0.022
1.4
1.2
gFS
17
24
mhos
Ciss
1900
2660
pF
Coss
580
810
Crss
150
300
td(on)
12
20
tr
298
600
td(off)
70
140
tf
110
220
QT
125
175
Q1
10
Q2
30
Q3
40
1.0
0.98
1.5
trr
100
ta
80
tb
20
QRR
0.341
3.5
4.5
7.5
OFF CHARACTERISTICS
(Cpk 2.0) (3)
V(BR)DSS
IDSS
IGSS
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
RDS(on)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 52 Adc)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 150C)
Ohm
VDS(on)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
(VDD = 30 Vdc,
Vd ID = 52 Adc,
Ad
VGS = 10 Vdc
Vdc,
RG = 9.1 ))
Fall Time
Gate Charge
(See Figure 8)
((VDS = 48 Vdc,
Vd , ID = 52 Adc,
Ad ,
VGS = 10 Vdc)
ns
nC
VSD
Vdc
ns
LD
LS
nH
nH
MTP52N06V
TYPICAL ELECTRICAL CHARACTERISTICS
110
VGS = 10 V
9V
TJ = 25C
8V
7V
90
80
70
60
6V
50
40
30
5V
20
90
25C
80
70
60
50
40
30
10
0
0.035
10
2.5
3.5
4.5
5.5
6.5
VGS = 10 V
TJ = 100C
0.03
0.025
25C
0.02
0.015
55C
0.01
0.005
0
0
TJ = 55C
10
20
30
40
50
60
70
80
90
100
110
100C
20
10
0
0.023
7.5
95
105
TJ = 25C
0.022
0.021
VGS = 10 V
0.020
0.019
15 V
0.018
0.017
0.016
0.015
15
25
35
45
55
75
65
85
100
2
1.75
VGS = 0 V
VGS = 10 V
ID = 26 A
1.5
VDS 10 V
100
I D , DRAIN CURRENT (AMPS)
110
100
1.25
1
0.75
TJ = 125C
10
100C
0.5
0.25
50
25
25
50
75
100
125
150
175
10
20
30
40
50
60
MTP52N06V
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (t) are determined
by how fast the FET input capacitance can be charged by
current from the generator.
The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
7000
C, CAPACITANCE (pF)
6000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
5000
Crss
4000
3000
Ciss
2000
Coss
1000
Crss
0
10
0
VGS
10
15
20
25
VDS
36
33
QT
10
30
27
VGS
24
21
Q2
Q1
18
15
12
9
ID = 52 A
TJ = 25C
2
Q3
VDS
0
0
20
40
60
80
100
QT, TOTAL CHARGE (nC)
120
6
3
0
140
1000
t, TIME (ns)
12
MTP52N06V
VDD = 30 V
ID = 52 A
VGS = 10 V
TJ = 25C
100
tr
tf
td(off)
td(on)
10
1
1
10
RG, GATE RESISTANCE (OHMS)
100
50
I S , SOURCE CURRENT (AMPS)
45
40
35
30
25
20
15
10
5
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
MTP52N06V
SAFE OPERATING AREA
450
VGS = 20 V
SINGLE PULSE
TC = 25C
1000
10 s
100
100 s
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10
1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
ID = 52 A
400
350
300
250
200
150
100
50
0
100
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (C)
175
1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
MTP52N06V
PACKAGE DIMENSIONS
T
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
F
T
Q
1 2 3
STYLE 5:
PIN 1.
2.
3.
4.
H
K
Z
L
G
D
N
GATE
DRAIN
SOURCE
DRAIN
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
2.04
CASE 221A06
ISSUE Y
MTP52N06V
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals
must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 18004412447 or 6023035454
*MTP52N06V/D*