FJAF6810

FJAF6810
High Voltage Color Display Horizontal
Deflection Output
High Collector-Base Breakdown Voltage : BVCBO = 1500V
High Switching Speed : tF(typ.) =0.1s
For Color Monitor
TO-3PF
1
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter

Rating
1500

Units
V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

750

IC

Collector Current (DC)

10

V
A

ICP*

Collector Current (Pulse)

20

PC

Collector Dissipation

60

TJ

Junction Temperature

150

TSTG

Storage Temperature

-55 ~ 150

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics TC=25C unless otherwise noted

Symbol
ICES

Parameter
Collector Cut-off Current

Test Conditions
VCB=1400V, RBE=0

Min

Typ

Max
1

Units
mA

ICBO

Collector Cut-off Current

VCB=800V, IE=0

10

IEBO

Emitter Cut-off Current

VEB=4V, IC=0

mA

BVEBO

Emitter-Base Breakdown Voltage

IE=500A, IC=0

hFE1
hFE2

DC Current Gain

VCE=5V, IC=1A
VCE=5V, IC=6A

10
5

VCE(sat)

Collector-Emitter Saturation Voltage

IC=6A, IB=1.5A

VBE(sat)

Base-Emitter Saturation Voltage

IC=6A, IB=1.5A

1.5

tSTG*

Storage Time

tF*

Fall Time

VCC=200V, IC=6A, RL=33

IB1=1.2A, IB2= - 2.4A

0.2

V
8
V

* Pulse Test: PW=20s, duty Cycle=1% Pulsed

Thermal Characteristics TC=25C unless otherwise noted

Symbol
RjC

Parameter
Thermal Resistance, Junction to Case

2001 Fairchild Semiconductor Corporation

Typ

Max
2.08

Units
C/W

Rev. A2, May 2001

FJAF6810

Typical Characteristics

10

100

VCE = 5V

Ta = 125 C

hFE, DC CURRENT GAIN

IC [A], COLLECTOR CURRENT

IB=2.0A

IB=0.6A
IB=0.4A

IB=0.2A
2

0
0

10

12

Ta = - 25 C
10

1
0.1

14

VCE [V], COLLECTOR-EMITTER VOLTAGE

10

Figure 2. DC current Gain

10

100

VCE(sat) [V], SATURATION VOLTAGE

IC = 5 IB

10

Ta = 125 C
0

Ta = 25 C
0

Ta = - 25 C
0.1

0.01
0.1

IC = 3 IB

1
0

Ta = 25 C
0

Ta = 125 C

0.1
0

Ta = - 25 C

0.01
0.1

10

IC [A], COLLECTOR CURRENT

10

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector-Emitter Saturation Voltage

14

10

VCE = 5V

VCC = 200V,
IC = 6A, IB1 = 1.2A

tSTG & tF[s], SWITCHING TIME

12

IC [A], COLLECTOR CURRENT

100

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristic

VCE(sat) [V], SATURATION VOLTAGE

Ta = 25 C

10

4
0

Ta = 125 C

25 C

- 25 C

0
0.0

tSTG
1

tF

0.1

0.01
0.2

0.4

0.6

0.8

1.0

VBE [V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

2001 Fairchild Semiconductor Corporation

1.2

10

IB2 [A], REVERSE BASE CURRENT

Figure 6. Resistive Load Switching Time

Rev. A2, May 2001

FJAF6810

Typical Characteristics (Continued)

100

10

VCC = 200V,
IB1 = 1.0A, IB2 = - 2.4A

tSTG & tF [s], SWITCHING TIME

tSTG & tF[ s], SWITCHING TIME

VCC = 200V,
IC = 6A, IB2 = - 2.4A
10

tSTG

tF
0.1

0.01

tSTG
1

tF

0.1
1

10

IC [A], COLLECTOR CURRENT

IB1 [A], FORWARD BASE CURRENT

Figure 7. Resistive Load Switching Time

Figure 8. Resistive Load Switching Time

100

30

RB2 = 0, IB1 = 15A

VCC = 30V, L = 200 H

IC (Pulse) t = 100ms t = 10ms

IC [A], COLLECTOR CURRENT

25

IC [A], COLLECTOR CURRENT

10

20

15

10

VBE(off) = - 6V
5

10

IC (DC)

t = 1ms

0.1
o

TC = 25 C
Sigle Pulse

VBE(off) = - 3V
0.01

1
10

100

1000

10000

VCE [V], COLLECTOR-EMITTER VOLTAGE

10

100

1000

10000

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Reverse Bias Safe Operating Area

Figure 10. Forward Bias Safe Operating Area

80

PD [W], POWER DISSIPATION

70

60

50

40

30

20

10

0
0

25

50

75

100

125

150

175

200

C o

T [ C], CASE TEMPERATURE

Figure 11. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A2, May 2001

FJAF6810

Package Demensions

TO-3PF
4.50 0.20

5.50 0.20
15.50 0.20

2.00 0.20

22.00 0.20

23.00 0.20

10

1.50 0.20

16.50 0.20

2.50 0.20

14.50 0.20

0.85 0.03

2.00 0.20

16.50 0.20

2.00 0.20

4.00 0.20
3.30 0.20

+0.20

0.75 0.10

2.00 0.20

3.30 0.20

5.45TYP
[5.45 0.30]

5.45TYP
[5.45 0.30]

+0.20

0.90 0.10

5.50 0.20

26.50 0.20

10.00 0.20

(1.50)

2.00 0.20
2.00 0.20

14.80 0.20

3.00 0.20

3.60 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A2, May 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOS
EnSigna
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MICROWIRE
OPTOLOGIC

OPTOPLANAR
PACMAN
POP
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SLIENT SWITCHER
SMART START
Stealth

SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H2