AO4614B

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4614B/L uses advanced trench technology

MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AO4614B and AO4614BL are electrically identical.

n-channel
VDS (V) = 40V,
RDS(ON)< 30m
RDS(ON)< 38m
p-channel
VDS (V) = -40V,
RDS(ON)< 45m
RDS(ON)< 63m

-RoHS Compliant
-AO4614BL is Halogen Free

ID = 6A (VGS=10V)
(VGS=10V)
(VGS=4.5V)
ID = -5A (VGS=-10V)
(VGS= -10V)
(VGS= -4.5V)
D1

D2
S2
G2
S1
G1

1
2
3
4

8
7
6
5

D2
D2
D1
D1

G1

G2

S1

S2

SOIC-8

p-channel

n-channel
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Max n-channel
Symbol
V
Drain-Source Voltage
40
DS
VGS
Gate-Source Voltage
20
Continuous Drain
Current A
Pulsed Drain Current B

TA=70C

Repetitive avalanche energy L=0.1mH

TA=25C
TA=70C

Junction and Storage Temperature Range

-5

-4

30

-30

IAR

14

-20

EAR

9.8

20

1.28

1.28

-55 to 150

-55 to 150

TJ, TSTG

Thermal Characteristics: n-channel and p-channel

Parameter
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

ID
IDM

PD

Symbol
RJA
RJL
RJA
RJL

Units
V

20

TA=25C

Avalanche Current B

Power Dissipation

Max p-channel
-40

mJ
W
C

Device
n-ch
n-ch
n-ch

Typ
48
74
35

Max
62.5
110
50

Units
C/W
C/W
C/W

p-ch
p-ch
p-ch

48
74
35

62.5
110
50

C/W
C/W
C/W

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AO4614B

N Channel Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

40
1
TJ=55C

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.7

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

RDS(ON)

Static Drain-Source On-Resistance

100

VGS=10V, ID=6A
TJ=125C
VGS=4.5V, ID=5A
gFS

Forward Transconductance

VSD

IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

VDS=5V, ID=6A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

Max

Units
V

VDS=40V, VGS=0V

VGS(th)

IS

Typ

2.5

A
nA
V
A

24

30

36

45

30

38

19
0.76

516

m
S

650

pF

VGS=0V, VDS=20V, f=1MHz

82

pF

43

pF

VGS=0V, VDS=0V, f=1MHz

4.6

VGS=10V, VDS=20V,
ID=6A

8.9

10.8

nC

4.3

5.6

nC

2.4

nC

Gate Drain Charge

1.4

nC

Turn-On DelayTime

6.4

ns

3.6

ns

16.2

ns

6.6

ns

VGS=10V, VDS=20V, RL=3.3,

RGEN=3

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=6A, dI/dt=100A/s

18

Qrr

Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s

10

24

ns
nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
9
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
12
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev0 : Sept 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

40

30
10V

35

5V

30

4.5V
20

25

4V

ID(A)

ID (A)

VDS=5V

25

20
15

15
10

10

125C

VGS=3.5V

25C

5
0
0

2.5

VDS (Volts)
Fig 1: On-Region Characteristics

4.5

1.8

34

Normalized On-Resistance

VGS=4.5V

32
RDS(ON) (m)

3.5

VGS(Volts)
Figure 2: Transfer Characteristics

36

30
28
26

VGS=10V

24
22
20

1.6
VGS=10V
ID=6A

1.4
1.2

VGS=4.5V
ID=5A

1
0.8
0.6

10

15

-50

20

100

80
ID=6A

70

-25

25

50

75

100

125

150

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

9
12

10

60

50

IS (A)

RDS(ON) (m)

125C

40

125C
25C

0.01

25C

30

0.1

0.001

20

0.0001

10
3

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

800

10
VDS=20V
ID= 6A
Capacitance (pF)

VGS (Volts)

8
6
4
2

Ciss

600

400

Crss

200

Coss

0
0

10

10

20

30

40

VDS (Volts)
Figure 8: Capacitance Characteristics

Qg (nC)
Figure 7: Gate-Charge Characteristics

1000

100

TJ(Max)=150C
TA=25C

10s
100s
1

RDS(ON)
limited

1ms
10ms
0.1s
1s
10s

0.1
TJ(Max)=150C
TA=25C

DC

Power (W)

ID (Amps)

10

10

10

1
0.00001

0.01
0.1

100

100

0.001

0.1

10

1000

VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

9
12

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=74C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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AO4614B

P-Channel Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID= -250A, VGS=0V

-40

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID= -250A

-1.7

ID(ON)

On state drain current

VGS= -10V, VDS= -5V

-30

RDS(ON)

Static Drain-Source On-Resistance

TJ=125C
VGS= -4.5V, ID= -4A

Diode Forward Voltage

IS= -1A,VGS=0V
Maximum Body-Diode Continuous Current

VDS= -5V, ID= -5A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

nA
V

100

VGS= -10V, ID= -5A

Forward Transconductance

-5

IGSS

VSD

Units

-1
TJ=55C

gFS

Max

VDS= -40V, VGS=0V

VGS(th)

IS

Typ

-2

A
36

45

52

65

50

63

13
-0.76

940
VGS=0V, VDS= -20V, f=1MHz

-3

S
-1

-2

1175

pF

97

pF

72

pF

VGS=0V, VDS=0V, f=1MHz

14

17

22

nC

VGS= -10V, VDS= -20V,

ID= -5A

7.9

10

nC

3.4

nC

Gate Drain Charge

3.2

nC

Turn-On DelayTime

6.2

ns

8.4

ns

44.8

ns

41.2

ns

VGS= -10V, VDS= -20V, RL=4,

RGEN=3

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF= -5A, dI/dt=100A/s

21

Qrr

Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/s

14

27

ns
nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
2
A:T The
value of R JA is in
measured
with
the device
mounted
FR-4
board board
with 2oz.
Copper,
a still air
environment
with
any given
application
depends
onon
the1in
user's
specific
design.
Thein
current
rating
is based on
theTA =25C. The
A =25C. The value
value
anythermal
a givenresistance
application
depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
t in10s
rating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
9
B:
rating,
pulse
limitedimpedence
by junctionfrom
temperature.
the sum
of width
the thermal
junction to lead RJL and lead to ambient.
C.Repetitive
The R JA is
12
C.
the sum of theinthermal
from
to using
lead R<300
to ambient.
JA ischaracteristics
JL and
D.The
TheRstatic
Figuresimpedence
1 to 6,12,14
arejunction
obtained
s lead
pulses,
duty cycle 0.5% max.
2 using 80 s pulses, duty cycle 0.5% max.
D.
The
static
characteristics
in
Figures
1
to
6,12,14
are
obtained
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
E.
performed
with the
devicepulse
mounted
on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The
=25C.tests
The are
SOA
curve provides
a single
rating.
T AThese
SOA
provides
Rev0curve
: Sept
2007 a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30

30
VDS=-5V

-10V
25

-5V
-4V

-4.5V

20
-ID(A)

20
-ID (A)

25

15
VGS=-3.5V

10

15
10

125C

25C

0
0

1.5

-VDS (Volts)
Fig 12: On-Region Characteristics

2.5

3.5

4.5

-VGS(Volts)
Figure 13: Transfer Characteristics

65

1.7
Normalized On-Resistance

60
VGS=-4.5V

55
RDS(ON) (m)

50
45
40

VGS=-10V

35

VGS=-10V
ID=-5A

1.5
1.3
1.1

VGS=-4.5V
ID=-4A

0.9
0.7

30
0

10

15

-50

20

-ID (A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage

-25

25

50

75

100

125

150

Temperature (C)
Figure 15: On-Resistance vs. Junction
Temperature

130

100
ID=-5A

9
12

10

110

-IS (A)

RDS(ON) (m)

1
90
70

125C

50

125C
0.1
25C

0.01
0.001

25C

0.0001

30
3

10

-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 17: Body-Diode Characteristics

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AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10

1200

6
4

Ciss

1000

Capacitance (pF)

8
-VGS (Volts)

1400

VDS=-20V
ID= -5A

800
600
400

Crss

Coss

200
0

0
0

12

15

18

10

20

40

-VDS (Volts)
Figure 19: Capacitance Characteristics

Qg (nC)
Figure 18: Gate-Charge Characteristics

1000

100

TJ(Max)=150C
TA=25C

10s
100s
1

RDS(ON)
limited

0.1

TJ(Max)=150C
TA=25C

1ms
10ms
0.1s
1s
10s

DC

Power (W)

10
-ID (Amps)

30

10

10

1
0.00001

0.01
0.1

100

100

0.001

0.1

10

1000

-VDS (Volts)

Pulse Width (s)

Figure 21: Single Pulse Power Rating Junction-to
Ambient (Note E)

Figure 20: Maximum Forward Biased Safe

Operating Area (Note E)

ZJA Normalized Transient

Thermal Resistance

10

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=74C/W

9
12
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton

0.01
0.00001

Single Pulse
0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 22: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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