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Revision
Date
:
:
:
SDRAM_Power_Calc_10.XLS
1.0
April 10, 2001
E-Mail
Company
:
:
dramsupport@micron.com
Micron Technology, Inc.
Description
Limitations
Notes
Disclaimer
Parameter Condition
Maximum VCC
Minimum VCC
IDD0
Maximum Active Current (calculated)
IDD1
Maximum Operating Current
IDD2
Maximum Precharge Power-Down Standby Current
IDD3
Maximum Active Standby Current
IDD4
Maximum Read Burst Current
IDD6
Maximum Distributed Refresh Current
t
CK for current measurements (see current notes)
t
RRD
Minimum activate-to-activate timing (different bank)
t
RC
Minimum activate-to-activate timing (same bank)
Minimum tCK cycle rate
128 M
8
-7E
Value
3.6
3
131
160
2
50
165
3
7.5
14
60
7
Units
V
V
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
3.3
133
25
V
MHz
pF
70%
80%
0%
120
40%
15%
ns
p(PRE_PDN)
7.2 mW
4.0 mW
p(PRE_STBY)
180.0 mW
25.2 mW
p(ACT_PDN)
7.2 mW
0.0 mW
p(ACT_STBY)
180.0 mW
54.0 mW
p(REF)
Background power to
complete refreshes
3.6 mW
3.6 mW
P(REF)
3.0 mW
p(ACT)
292.5 mW
146.3 mW
P(ACT)
122.9 mW
p(WR)
414.0 mW
62.1 mW
P(WR)
52.1 mW
p(RD)
414.0 mW
165.6 mW
P(RD)
138.8 mW
p(DQ)
DQ output power
172.8 mW
69.1 mW
P(DQ)
57.9 mW
529.9 mW
P(PRE_PDN)
p(PRE_STBY)
P(ACT_PDN)
P(ACT_STBY)
3.4 mW
21.1 mW
0.0 mW
45.3 mW
444.5 mW
P(ACT)
Total Activate Power
122.9 mW
122.9 mW
P(WR)
P(RD)
P(DQ)
Total Read/Write Power
Total SDR SDRAM Power
52.1
138.8
57.9
248.8
444.5
mW
mW
mW
mW
mW
System is operating at 133 MHz at VCC = 3.3V. Read bandwidth is 53.2MB/s with write bandwidth of 19.95 MB/s. The data bus is
idle 45% of the time. ACT commands are separated by 120ns on average. All parameters are calculated and require no user
input.
Power Consumption Summary
P(PRE_PDN)
3.4 mW
Power Consumption per Device
500.0
P(PRE_STBY)
21.1 mW
P(ACT_PDN)
0.0 mW
450.0
P(ACT_STBY)
45.3 mW
400.0
P(REF)
3.0 mW
350.0
Total Background Power
72.8 mW
300.0
Total Read/Write Pow er
250.0
200.0
150.0
100.0
50.0
0.0
160.0
Pow er (mW )
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
P(PRE_PDN)
P(PRE_S TBY)
P(ACT_PDN)
P(ACT_S TBY)
P(REF)
P(ACT)
P(WR)
P(RD)
P(DQ)