SIDDHARTH INSTITUTE OF ENGINEERING &

TECHNOLOGY
(AUTONOMOUS)
NARAYANAVANAM ROAD, PUTTUR- 517 583

ELECTRONIC DEVICES & CIRCUITS

LABORATORY MANUAL
DEPARTMENT
OF
ELECTRONICS AND COMMUNICATION ENGINEERING
PREPARED BY
VERIFIED
BY
M.MARIMUTHU

M.JANARDHANA RAJU

Assistant Professor

Professor/Head of the Department

(15A04305) ELECTRONIC DEVICES AND CIRCUITS LABORATORY

PART A: Electronic Workshop Practice
1. Identification, Specifications, Testing of R, L, C Components (Color Codes),
Potentiometers, Coils, Gang Condensers, Relays, Bread Boards.
2. Identification, Specifications and Testing of active devices, Diodes, BJTs, JFETs,
LEDs, LCDs, SCR, UJT.
3. Soldering Practice- Simple circuits using active and passive components.
4. Study and operation of Ammeters, Voltmeters, Transformers, Analog and Digital
Multi-meter, Function Generator, Regulated Power Supply and CRO.
PART B: List of Experiments
(For Laboratory Examination-Minimum of Ten Experiments)
1. P-N Junction Diode Characteristics
Part A: Germanium Diode (Forward bias & Reverse bias)
Part B: Silicon Diode (Forward bias only)
2. Zener Diode Characteristics
Part A: V-I Characteristics
Part B: Zener Diode act as a Voltage Regulator
3. Rectifiers (without and with c-filter)
Part A: Half-wave Rectifier
Part B: Full-wave Rectifier
4. BJT Characteristics(CE Configuration)
Part A: Input Characteristics
Part B: Output Characteristics
5. FET Characteristics(CS Configuration)
Part A: Drain (Output) Characteristics
Part B: Transfer Characteristics
6. SCR Characteristics
7. UJT Characteristics
8. Transistor Biasing
9. CRO Operation and its Measurements
10. BJT-CE Amplifier
11. Emitter Follower-CC Amplifier
12. FET-CS Amplifier

PART A: Electronic Workshop Practice

1. Identification, Specifications, Testing of R, L, C Components (Color Codes),
Potentiometers, Coils, Gang Condensers, Relays, Bread Boards.
AIM:
To study about identification, specification and testing of the R, L, and C components,
Potentiometers, Coils, Gang Condensers, Relays and Bread Boards.
APPARATUS REQUIRED:
S.NO
1
2
3
4
5
6
7
8

COMPONENTS
Resistor
Capacitor
Inductor
Potentiometer
Coils
Gang Condenser
Relay
Bread board

QUANTITY
1
1
1
1
1
1
1
1

THEORY:
1. RESISTOR
Resistor is an electronic component whose function is to limit the flow of current in an
electric circuit. It is measured in units called ohms. The symbol for ohm is (omega).
Without resistors voltage would be too great for individual components to handle and would
result in overloading or destruction.
Identification:
Color coding is used in electronics to identify between different components. Electronic
components like resistors are very small in size and it is difficult to print its value directly on
to the component surface. Hence a standard was formed in 1920 by then Radio
Manufacturers Association (now part of EIA Electronic Industries Alliance) to identify
values and ratings of electronic components by printing color codes on them.
Specification:
In the case of resistors, a specific resistance value is represented using ohms, For example a
100 ohms resistor or a 1 kilo ohms resistor with 5% tolerance. The resistors are represented
by using its symbol in the circuit.

a. Fixed resistor
b. variable Resistor
c. Potentiometer
Typical resistor wattage sizes are 1/8, 1/4, 1/2, 1, 2, 5, 10 and 20 (w) units, depending on
thickness of leads Wattage of resistors can be decided. The various types of resistors are
carbon resistor, thin film resistor, wire wound resistor and rheostat.

Testing:
1.
2.
3.
4.
5.

connect the measuring probes into the socket of the Digital Multi-meter
Switch on the multi-meter and set the knob in ohms position
Now measure the resistance by placing the testing probes on either side if the resistor.
The value of the resistance in ohms is noted and verified using color coding
If no value is displayed, see the resistor for any burnt shades or damages.

2. CAPACITOR
The Capacitor, sometimes referred to as a Condenser, is a simple passive device that is
used to store electricity. The capacitor is a component which has the ability or capacity to
store energy in the form of an electrical charge producing a potential difference (Static
Voltage) across its plates, much like a small rechargeable battery.
Identification:
Capacitors are identified using the value written on the body. There are some capacitors
which are identified using color codes. A capacitor is said to be Fully Charged when the
voltage across its plates equals the supply voltage. The symbol for electrical charge is Q
and its unit is the Coulomb.
Specification:
Electrolytic capacitors are polarized. They have a +ve and a -ve terminal. Capacitance is
measured in Farads, which is a very large unit so micro-Farad (uF), Nano-Farad (nF)
and Pico-Farad (pF) are generally used. Capacitive reactance is the opposition to current
flow in AC circuits. In AC capacitive circuits the voltage lags the current by 90o.

To specify the value of the ceramic capacitor we use the code table shown below
Picofarad
(pF)
10
15
22
33
47
100
120
130
150
180
220
330
470
560
680
750
820
1000
1500
2000
2200
3300

Testing:

Nanofarad
(nF)
0.01
0.015
0.022
0.033
0.047
0.1
0.12
0.13
0.15
0.18
0.22
0.33
0.47
0.56
0.68
0.75
0.82
1.0
1.5
2.0
2.2
3.3

Microfarad
(uF)
0.00001
0.000015
0.000022
0.000033
0.000047
0.0001
0.00012
0.00013
0.00015
0.00018
0.00022
0.00033
0.00047
0.00056
0.00068
0.00075
0.00082
0.001
0.0015
0.002
0.0022
0.0033

Code
100
150
220
330
470
101
121
131
151
181
221
331
471
561
681
751
821
102
152
202
222
332

Picofarad
(pF)
4700
5000
5600
6800
10000
15000
22000
33000
47000
68000
100000
150000
200000
220000
330000
470000
680000
1000000
1500000
2000000
2200000
3300000

Nanofarad
(nF)
4.7
5.0
5.6
6.8
10
15
22
33
47
68
100
150
200
220
330
470
680
1000
1500
2000
2200
3300

Microfarad
(uF)
0.0047
0.005
0.0056
0.0068
0.01
0.015
0.022
0.033
0.047
0.068
0.1
0.15
0.2
0.22
0.33
0.47
0.68
1.0
1.5
2.0
2.2
3.3

Code
472
502
562
682
103
153
223
333
473
683
104
154
254
224
334
474
684
105
155
205
225
335

1. Checking this capacitor with a capacitance meter is straight forward. On these

capacitors, the positive lead is marked. Attach the positive (red) lead from the meter to
that and the negative (black) to the opposite. This capacitor shows 1038F, clearly
within its tolerance.
2. In this example the capacitor will be charged with a 9V DC battery for a few seconds.
After the charge is finished, disconnect the battery from the capacitor. Use the multimeter and read the voltage on the capacitor leads. The voltage should read near 9
volts. The voltage will discharge rapidly to 0V because the capacitor is discharging
through the multi-meter. If the capacitor will not retain that voltage, it is defective and
should be replaced
3. INDUCTOR
A current through a conductor produces a magnetic field surround it. The strength of
this field depends upon the value of current passing through the conductor. The direction of
the magnetic field is found using the right hand grip rule, which shown. The flux pattern for
this magnetic field would be number of concentric circle perpendicular to the detection of
current. Now if we wound the conductor in form of a coil or solenoid, it can be assumed that
there will be concentric circular flux lines for each individual turn of the coil as shown.
But it is not possible practically, as if concentric circular flux lines for each individual
turn exist, they will intersect each other. However, since lines of flux cannot intersect, the
flux lines for individual turn will distort to form complete flux loops around the whole coil as
shown. This flux pattern of a current carrying coil is similar to a flux pattern of a bar magnet
as shown.

Now if the current through the coil is changed, the magnetic flux produced by it will also be
changed at same rate. As the flux is already surrounds the coil, this changing flux obviously
links the coil. Now according to Faradays law of electromagnetic induction, if changing flux
links with a coil, there would be an induced emf in it. Again as per Lenzs law this induced
emf opposes every cause of producing it. Hence, the induced emf is in opposite of the applied
voltage across the coil.

Unit of Inductance

Which we derived at equation, Where, L is known is the self-induction of the circuit. In the
above equation of inductance, if e = 1 Volt and (di / dt) is one ampere per second, then L = 1
and its unit is Henry. That means, if a circuit, produces emf of 1 Volt, due to the rate of
change of current through it, one ampere per second then the circuit is said to have one henry
self-inductance. This henry is unit of inductance

Potentiometers:
A potentiometer, informally a pot, is a three-terminal resistor with a sliding or rotating
contact that forms an adjustable voltage divider.[1] If only two terminals are used, one end and
the wiper, it acts as a variable resistor or rheostat.
The measuring instrument called a potentiometer is essentially a voltage divider used for
measuring electric potential (voltage); the component is an implementation of the same
principle, hence its name.
Potentiometers are commonly used to control electrical devices such as volume controls on
audio equipment. Potentiometers operated by a mechanism can be used as position
transducers, for example, in a joystick. Potentiometers are rarely used to directly control
significant power (more than a watt), since the power dissipated in the potentiometer would
be comparable to the power in the controlled load.

Coils:

An electromagnetic coil is an electrical conductor such as a wire in the shape of a coil, spiral
or helix. Electromagnetic coils are used in electrical engineering, in applications where
electric currents interact with magnetic fields, in devices such as inductors, electromagnets,
transformers, and sensor coils. Either an electric current is passed through the wire of the coil
to generate a magnetic field, or conversely an external time-varying magnetic field through
the interior of the coil generates an EMF (voltage) in the conductor.

Coils can be classified by the frequency of the current they are designed to operate with:

Direct current or DC coils or electromagnets operate with a steady direct

current in their windings
Audio-frequency or AF coils, inductors or transformers operate with
alternating currents in the audio frequency range, less than 20 kHz
Radio-frequency or RF coils, inductors or transformers operate with
alternating currents in the radio frequency range, above 20 kHz

Gang Condenser:
A gang condenser is a a variable capacitor.A variable capacitor is constructed in such manner
that its value of capacitance can be varied. A typical variable capacitor (adjustable capacitor)
is the rotor-stator type. It consists of two sets of metal plates arranged so that the rotor plates
move between the stator plates. Air is the dielectric. As the position of the rotor is changed,
the capacitance value is likewise changed. This type of capacitor is used for tuning most radio
receivers.

Relays:

A relay is an electrically operated switch. Many relays use an electromagnet to

mechanically operate a switch, but other operating principles are also used, such as solid-state
relays. Relays are used where it is necessary to control a circuit by a low-power signal (with
complete electrical isolation between control and controlled circuits), or where several
circuits must be controlled by one signal. The first relays were used in long distance telegraph
circuits as amplifiers: they repeated the signal coming in from one circuit and re-transmitted
it on another circuit. Relays were used extensively in telephone exchanges and early
computers to perform logical operations.
Bread Boards:

A breadboard is a construction base for prototyping of electronics. Originally it was literally

a bread board, a polished piece of wood used for slicing bread. In the 1970s the solderless
breadboard (AKA plugboard, a terminal array board) became available and nowadays the
term "breadboard" is commonly used to refer to these. "Breadboard" is also a synonym for
"prototype".
Because the solderless breadboard does not require soldering, it is reusable. This makes it
easy to use for creating temporary prototypes and experimenting with circuit design. For this
reason, solderless breadboards are also extremely popular with students and in technological
education. Older breadboard types did not have this property. A stripboard (Veroboard) and
similar prototyping printed circuit boards, which are used to build semi-permanent soldered
prototypes or one-offs, cannot easily be reused

Part B Experiments
1. P-N Junction Diode Characteristics
Part A: Germanium Diode (Forward bias & Reverse bias)
Part B: Silicon Diode (Forward bias only)
a)AIM:
To study the voltage-current characteristics of silicon (Forward bias only)
APPARATUS REQUIRED:

S.NO
1
2
3
4
5
6
7

COMPONENTS
Diode
Regulated Power
supply
Resistor
Ammeters
Voltmeter
Bread board
Connecting wires

RANGE
1N4007
(0-30v)

QUANTITY
1
1

1K
(0-200 mA, 0-500mA)
(0-20 V)

1
1 each
1
1
As required

THEORY:
P-N junction diode conducts only in one direction. The V-I characteristics of the diode
are curve between voltage across the diode and current through the diode. When external
voltage is zero, circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When P-type (Anode is connected to +ve terminal and
n- type (cathode) is connected to ve terminal of the supply voltage, is known as forward
bias.
The potential barrier is reduced when diode is in the forward biased condition. At
some forward voltage, the potential barrier altogether eliminated and current starts flowing
through the diode and also in the circuit. The diode is said to be in ON state. The current
increases with increasing forward voltage.
PROCEDURE
FORWARD BIAS:
1. Connections are made as per the circuit diagram.
2. In forward bias, the RPS +ve is connected to the anode of the diode and RPS ve is
connected to the cathode of the diode,
3. Switch on the power supply and increases the input voltage (supply voltage) in Steps.
4. Note down the corresponding current flowing through the diode and voltage across the
diode for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage and current.

CIRCUIT DIAGRAM
FORWARD BIAS:

MODEL GRAPH:

TABULATION AND OBSERVATIONS:

FORWARD BIAS:
S.NO

FORWARD
VOLTAGE
(mV)

FORWARD
CURRENT
(mA)

1
2
3
4
5
6
7
8
9
10

RESULT:
Thus the study of V-I characteristics of PN junction diode is successfully completed
Cut in voltage = ____________________
Break Down Voltage =_______________
Forward resistance = _________________
Reverse resistance -= _________________
b) AIM:

To study the voltage-current characteristics of germanium (Forward bias and reverse

bias)
APPARATUS REQUIRED:
S.NO
1
2
3
4
5
6
7

COMPONENTS
Diode
Regulated Power
supply
Resistor
Ammeters
Voltmeter
Bread board
Connecting wires

RANGE
1N34A
(0-30v)

QUANTITY
1
1

1K
(0-200 mA, 0-500A)
(0-20 V)

1
1 each
1
1
As required

THEORY:
P-N junction diode conducts only in one direction. The V-I characteristics of the diode
are curve between voltage across the diode and current through the diode. When external
voltage is zero, circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When P-type (Anode is connected to +ve terminal and
n- type (cathode) is connected to ve terminal of the supply voltage, is known as forward
bias.
The potential barrier is reduced when diode is in the forward biased condition. At
some forward voltage, the potential barrier altogether eliminated and current starts flowing
through the diode and also in the circuit. The diode is said to be in ON state. The current
increases with increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected ve
terminal of the supply voltage is known as reverse bias and the potential barrier across the
junction increases. Therefore, the junction resistance becomes very high and a very small
current (reverse saturation current) flows in the circuit. The diode is said to be in OFF state.
The reverse bias current due to minority charge carriers only
PROCEDURE
FORWARD BIAS:
1. Connections are made as per the circuit diagram.
2. In forward bias, the RPS +ve is connected to the anode of the diode and RPS ve is
connected to the cathode of the diode,
3. Switch on the power supply and increases the input voltage (supply voltage) in Steps.
4. Note down the corresponding current flowing through the diode and voltage across the
diode for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage and current.

CIRCUIT DIAGRAM

FORWARD BIAS:

REVERSE BIAS:

MODEL GRAPH:

REVERSE BIAS:1. Connections are made as per the circuit diagram

2 .For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS ve is
connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in Steps
4. Note down the corresponding current flowing through the diode voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated
6. Graph is plotted between voltage and current.
TABULATION AND OBSERVATIONS:
FORWARD BIAS:
S.NO

FORWARD
VOLTAGE
(mV)

REVERSE BIAS:
FORWARD
CURRENT
(mA)

1
2
3
4
5
6
7
8
9
10

S.NO

REVERSE
VOLTAGE
(mV)

1
2
3
4
5
6
7
8
9
10

RESULT:
Thus the study of V-I characteristics of PN junction diode is successfully completed
Cut in voltage = ____________________
Break Down Voltage =_______________
Forward resistance = _________________
Reverse resistance -= _________________

REVERSE
CURRENT
(A)

2. Zener Diode V-I Characteristics

AIM:
To study the voltage current characteristics of Zener diode(reverse bias only)
COMPONENTS REQUIRED:
S. No
1
2
3
4
5
6

Apparatus
Zener Diode
Resistance
Regulated Power Supply
Ammeter
Voltmeter
Bread board and connecting wires

CIRCUIT DIAGRAM:
REVERSE BIAS:

SYMBOL:

Range
IZ6.2
1Kohm
(0-30)V
(0-100)mA
(0-30)V
As required

Quantity
1
1
1
1
1

MODEL GRAPH:

THEORY:
The Zener diode is like a general-purpose signal diode consisting of a silicon PN
junction. When biased in the forward direction it behaves just like a normal signal diode
passing the rated current, but as soon as a reverse voltage applied across the Zener Diode
exceeds the rated voltage of the device, the diodes breakdown voltage is reached at which
point a process called Avalanche Breakdown occurs in the semiconductor depletion layer and
a current starts to flow through the diode to limit this increase in voltage.
The current now flowing through the zener diode increases dramatically to the maximum
circuit value (which is usually limited by a series resistor) and once achieved this reverse
saturation current remains fairly constant over a wide range of applied voltages. The voltage
point at which the voltage across the zener diode becomes stable is called the zener voltage
for zener diodes this voltage can range from less than one volt to hundreds of volts.
The point at which the zener voltage triggers the current to flow through the diode can
be very accurately controlled (to less than 1% tolerance) in the doping stage of the diodes
semiconductor construction giving the diode a specific zener breakdown voltage, ( Vz ) for
example, 4.3V or 7.5V. This zener breakdown voltage on the I-V curve is almost a vertical
straight line.
PROCEDURE:
REVERSE BIASED CONDITION:
1. Connect the Zener diode in Reverse bias i.e; anode is connected to negative of the
power supply and cathode is connected to positive of the power supply as in circuit.
2. For various values of reverse voltage (Vr) note down the corresponding values of
reverse current (Ir).

TABULATION AND OBSERVATIONS:

REVERSE BIAS:

RESULT:
Thus the study of V-I characteristics of Zener diode is successfully completed

Zener Break Down Voltage =_______________

3 (a) . HALF WAVE RECTIFIER WITH AND WITH OUT FILTER

AIM:
1. To plot Output waveform of the Half Wave Rectifier.
2. To find ripple factor for Half Wave Rectifier using the formulae.
COMPONENTS REQUIRED:
S.No
1
2
3
4
5
6
7

Apparatus
Diode
Resistance
Regulated Power Supply
CRO
Transformer
Capacitor
Bread board and connecting wires

Type
IN4001

Range
470
(0-30)V
6-0-6 V
47F

Quantity
1
1
1
1
1
1

CIRCUIT DIAGRAM:

Theory:
The operation of a half wave rectifier is pretty simple. From the theory part, you
should know that a pn junction diode conducts current only in 1 direction. In other words, a
pn junction diode conducts current only when it is forward biased.
The same principle is made use of in a half wave rectifier to convert AC to DC. The
input we give here is an alternating current. This input voltage is stepped down using a
transformer. The reduced voltage is fed to the diode D and load resistance RL. During the
positive half cycles of the input wave, the diode D will be forward biased and during the
negative half cycles of input wave, the diode D will be reverse biased.

Model waveform:
WITH FILTER:

EXPERIMENT PROCEDURE:
1. Connections are given as per the circuit diagram.
2. Apply AC main voltage to the primary of the transformer. Feed the rectified Output
voltage to the CRO and observe the Waveform.
3. Now connect the capacitor in parallel with load resistor and note down the amplitude
and time period of the waveform.
4. Plot the input, output waveforms on a graph sheet.
5. Calculate the ripple factor.
Tabular column:
Ripple Factor
S.No

RL

Vac

Vdc

Vac/Vdc
(with filter)

1.
2.
3.
4.
RESULT:

PRELAB QUESTIONS:
1. Define rectifier.

Ripple Factor
Vac/Vdc
(without filter)

2.
3.
4.
5.

Why rectifiers used with a filter at their output.

What is ripple factor
What is the voltage regulation of the rectifier.
What is the ideal value of regulation.
3(b). FULL WAVE RECTIFIER WITH AND WITH OUT FILTER

AIM:
1. To plot Output waveform of the Full Wave Rectifier.
2. To find ripple factor for Full Wave Rectifier using the formulae.
COMPONENTS REQUIRED:
S. No
1
2
3
4
5
6
7

Apparatus
Diode
Resistance
Regulated Power Supply
CRO
Transformer
Capacitor
Bread board and connecting wires

CIRCUIT DIAGRAM:

OUTPUT WAVEFORM WITH FILTER

Type
IN4001

Range
470
(0-30)V
6-0-6 V
47F

Quantity
2
1
1
1
1
1

Theory:
The full wave rectifier circuit consists of two power diodes connected to a single load
resistance (RL) with each diode taking it in turn to supply current to the load. When point A
of the transformer is positive with respect to point C, diode D1 conducts in the forward
direction as indicated by the arrows.
When point B is positive (in the negative half of the cycle) with respect to point C,
diode D2 conducts in the forward direction and the current flowing through resistor R is in the
same direction for both half-cycles. As the output voltage across the resistor R is the phasor
sum of the two waveforms combined, this type of full wave rectifier circuit is also known as a
bi-phase circuit.
Tabular column:
Ripple Factor
S.No

RL

Vac

Vdc

Vac/Vdc
(with filter)

Ripple Factor
Vac/Vdc
(without filter)

1.
2.
3.
4.
EXPERIMENT PROCEDURE:
1. Connections are given as per the circuit diagram.
2. Apply AC main voltage to the primary of the transformer. Feed the rectified Output
voltage to the CRO and observe the Waveform.

3. Now connect the capacitor in parallel with load resistor and note down the amplitude
and time period of the waveform.
4. Plot the input, output without filter and with filter waveform on a graph sheet.
5. Calculate the ripple factor.
RESULT:
PRELAB QUESTIONS:
1. What are the advantages and disadvantages of capacitor filter.
2. What are the applications of rectifiers.
3. What is the regulation for a (i) Half - wave circuit (ii) Full-wave circuit
4. What is PIV? State it value in case of (i) half wave (ii) Full wave (iii) Bridge rectifier.
5. What is the need for rectification.
4. INPUT AND OUTPUT CHARACTERISTICS OF TRANSISTOR IN CE
CONFIGURATION
AIM:
To study the input and output characteristics of a bipolar junction transistor in
COMMON EMITTER configuration
COMPONENTS REQUIRED:
S.No
1.
2.
3.
4.
5.
6.

Apparatus
Transistor
Resistance
Regulated Power Supply
Ammeter
Voltmeter
Bread board , connecting wires

CIRCUIT DIAGRAM:

Type
BC107

Range
1K
(0-30)V
(0-30)mA,(0-50)A
(0-30)V

Quantity
1
1
1
1
2

INPUT CHARACTRISTICS:

OUTPUT CHARACTRISTICS:

EXPERIMENT PROCEDURE:
INPUT CHARACTERISTICS:
1. Connect the transistor in CE configuration as per circuit diagram
2. Keep output voltage VCE at constant voltage by varying VCC.
3. Varying VBE gradually, note down both base current IB and VBE.
4. Repeat above procedure (step 3) for various values of VCE

OUTPUT CHARACTERISTICS:
1. Make the connections as per circuit diagram.
2. By varying VBE keep the base current IB constant.
3. Varying VCC gradually, note down the readings of collector-current (IC) and
collector- emitter voltage (VCE).
4. Repeat above procedure (step 3) for different values of Ib
5. Plot the input characteristics by taking VBE on Y-axis and IB on X-axis at
Constant VCE.
6. Plot the output characteristics by taking VCE on x-axis and IC on y-axis by
taking IB as a constant parameter.
RESULT:

PRE LAB QUESTIONS:

1. Why NPN transistors are preferable for amplification purpose than PNP transistors.
2. Explain the switching action of a transistor?
3. At what region of the output characteristics, a transistor can act as an amplifier?
4. What happens when we change the biasing condition of the transistors?
5. Why the output is phase shifted by 180 only in CE configuration.

5. FET CHARACTERISTICS
AIM:
1. To study Drain Characteristics of a FET.
2. To study Transfer Characteristics of a FET.

COMPONENTS REQUIRED:
S.No Apparatus
1.
JFET Transistor
0oo
2.
Resistance
3.
Ammeter
4.
Voltmeter
5.
Bread board & connecting Wires
6.
Regulated Power Supply
CIRCUIT DIAGRAM:

MODEL GRAPH:

Type
BFW10

Range
1K
(0-20)mA,(0-500)A
(0-1)V,(0-30)V

Quantity
1
2
1
1

(0-30)V

TABULAR COLUMN:
DRAIN CHARACTERISTICS
Vgs=
VDS (V)

Vgs=
ID(mA)

VDS(V)

Vgs=
ID(mA)

TRANSFER CHARACTERISTICS
VDS =
Vgs (V)

VDS =
ID(mA)

Vgs(V)

ID(mA)

VDS(V)

ID(mA)

EXPERIMENT PROCEDURE:
DRAIN CHARACTERISTICS
1. Connect the circuit as shown in the circuit diagram.
2. Determine the drain characteristics of FET by keeping VGS = 0v.
3. Plot its characteristics with respect to VDS versus ID
TRANSFER CHARACTERISTICS:
1. Determine the transfer characteristics of FET for constant value of VDS.
2. Plot its characteristics with respect to VGS versus ID
3. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at constant
VGS.
4. Plot the Transfer characteristics by taking VGS on X-axis and ID on Y-axis at constant
VDS.

CALCULATIONS:
Trans conductance (gm) =ID/ VDS =

Drain resistance (rd) = VDS/ ID=

RESULT:

PRELAB QUESTIONS:

1. Why FET is called as a unipolar transistor?

2. What are the advantages of FET over BJT?
3. State why FET is voltage controlled device?
4. What is the difference between MOSFET and FET?
5. Why FET is better than BJT?

6. SILICON-CONTROLLED RECTIFIER (SCR) CHARACTERISTICS

AIM: To draw the V-I Characteristics of SCR.
COMPONENTS REQUIRED:
S.No
1.
2.
3.
4.
5.
6.

Apparatus
SCR
RPS
RESISTORS
Ammeter
Voltmeter
breadboard & connecting wires

CIRCUIT DIAGRAM:

THEORY:

Type
Range
TYN616
(0-30)V
10K,1K
(0-50mA)
(0-10)V

Quantity
1
1
1,1
1
1

It is a four layer semiconductor device being alternate of P-type and N-type silicon. It
consists of 3 junctions J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates in
reverse direction and three terminals called anode A, cathode K , and a gate G. The operation
of SCR can be studied when the gate is open and when the gate is positive with respect to
cathode. When gate is open, no voltage is applied at the gate due to reverse bias of the
junction J2 no current flows through R2 and hence SCR is at cut off. When anode voltage is
increased J2 tends to breakdown. When the gate positive, with respect to cathode J3 junction
is forward biased and J2 is reverse biased .Electrons from N-type material move across
junction J3 towards gate while holes from P-type material moves across junction J3 towards
cathode. So gate current starts flowing, anode current increase is in extremely small current
junction J2 break down and SCR conducts heavily. When gate is open thee break over
voltage is determined on the minimum forward voltage at which SCR conducts heavily. Now
most of the supply voltage appears across the load resistance. The holding current is the
maximum anode current gate being open, when break over occurs.
PROCEDURE:
1. Connections are made as per circuit diagram.
2. Keep the gate supply voltage at some constant value
3. Vary the anode to cathode supply voltage and note down the readings of voltmeter and
ammeter. Keep the gate voltage at standard value.
4. A graph is drawn between VAK and IAK .
TABULAR COLUMN:
VAK(V)

IAK(A)

Result:

Viva questions:
1.
2.
3.
4.
5.

Why it is called silicon controlled rectifier?

Applications of SCR?
How can we switch off SCR?
How to switch OFF an SCR?
What is meant by Threshold?

7. UJT CHARACTERISTICS
AIM: To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off Ratio ().

COMPONENTS REQUIRED:
S.N
1.
o
2.
3.
4.
5.
6.

Apparatus
UJT
RPS
RESISTORS
Ammeter
Voltmeter
breadboard & connecting wires

CIRCUIT DIAGRAM:

THEORY:

Type
2N2646

Range
(0-30)V
100,1K
(0-50mA)
(0-10)V

Quantity
1
1
1,1
1
1

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only one
junction. The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and two
bases (B1 and B2). The base is formed by lightly doped n-type bar of silicon. Two ohmic
contacts B1 and B2 are attached at its ends. The emitter is of ptype and it is heavily doped.
The resistance between B1 and B2, when the emitter is open-circuit is called interbase
resistance.The original unijunction transistor, or UJT, is
a simple device that is essentially a bar of N type semiconductor material into which P type
material has been diffused somewhere along its length. The 2N2646 is the most commonly
used version of the UJT.

Symbol of UJT
The UJT is biased with a positive voltage between the two bases. This causes a potential drop
along the length of the device. When the emitter voltage is driven approximately one diode
voltage above the voltage at the point where the P diffusion (emitter) is, current will begin to
flow from the emitter into the base region. Because the base region is very lightly doped, the
additional current (actually charges in the
base region) causes (conductivity modulation) which reduces the resistance of the portion of
the base between the emitter junction and the B2 terminal. This reduction in resistance means
that the emitter junction is more forward biased, and so even more current is injected.
Overall, the effect is a negative resistance at the emitter terminal. This is what makes the UJT
useful, especially in simple oscillator circuits.When the emitter voltage reaches Vp, the
current startsto increase and the emitter voltage starts
to decrease.This is represented by negative slope of the characteristics which is reffered to as
the negative resistance region,beyond the valleypoint ,RB1 reaches minimum value and this
region,VEB propotional to IE.
PROCEDURE:
1. Connection is made as per circuit diagram.
2. Output voltage is fixed at a constant level and by varying input voltage corresponding
emitter current values are noted down.

3. This procedure is repeated for different values of output voltages.

4. All the readings are tabulated and Intrinsic Stand-Off ratio is calculated using
= (Vp-VBE) / VBB
5. A graph is plotted between VEE and IE for different values of VBE.

MODEL GRAPH:

TABULAR COLUMN:
VBB=1V
VEB(V)

VBB=2V
IE(mA)

VEB(V)

IE(mA)

Result:

VIVA Questions:
1.
2.
3.
4.
5.

what is UJT?
What is the special characteristics of UJT?
Name the terminals of the UJT.
Draw the characteristics of UJT
What is meant by negative resistance region?
8. TRANSISTOR BIASING

AIM:

1. Design of amplifier using collector to base bias

2. To Measure the voltage gain of a CE amplifier
3. To draw the frequency response curve of the CE amplifier

APPARATUS:
S.No

Apparatus

Type

1.

BJT Transistor

BC547

2.

Resistance

3.

Regulated Power Supply

4.

Function generator and

CRO

(0-5)MHz, (0-20)MHz

5.

Capacitors

10 F/ 25V, 100 F/ 25 V

6.

Bread board

DESIGN:

Range

1K,1.2 K,100 K,
(0-30)V

Quantit
y1
1,1,1
1
1,1

Assume VCC=12V,IC=5ma, =75

RC is calculated by applying KVL to collector to emitter
VCC-(IC+IB)RC-VCE=0
RC=(VCC-VCE)/(IB+IC)=1.18 K1.2 K
RB is calculated by applying KVL to collector to base
VCC-(IC+IB)RC- IB RB-VBE=0
RB=(VCC-(IC+IB)RC-VBE)/ IB=79.5 K100 K

CIRCUIT DIAGRAM:

THEORY:
The CE amplifier provides high gain &wide frequency response. The
emitter lead is common to both input & output circuits and is grounded. The emitter-base
circuit is forward biased. The collector current is controlled by the base current rather than

emitter current. The input signal is applied to base terminal of the transistor and amplifier
output is taken across collector terminal. A very small change in base current produces a
much larger change in collector current. When +VE half-cycle is fed to the input circuit, it
opposes the forward bias of the circuit which causes the collector current to decrease, it
decreases the voltage more VE. Thus when input cycle varies through a -VE half-cycle,
increases the forward bias of the circuit, which causes the collector current to increases thus
the output signal is common emitter amplifier is in out of phase with the input signal.
PROCEDURE:
1. Connect the circuit as shown in circuit diagram
2. Set Vcc 12v and adjust Vce to 6v to operate the transistor in active region.
3. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function
Generator
4. Measure the Output Voltage Vo (p-p) Tabulate the readings in the tabular form.
5. For plotting the frequency response the input voltage is kept Constant at 20mV peakto-peak and the frequency is varied from 10Hz to 1MHz Using function generator
6. All the readings are tabulated and voltage gain in dB is calculated by Using The
expression Av=20 log10 (V0/Vi)
The band width of the amplifier is calculated from the graph
Using the expression,
Bandwidth, BW=f2-f1
Where f1 lower cut-off frequency of CE amplifier, and
Where f2 upper cut-off frequency of CE amplifier
TABULAR COLUMN:
S.No FREQUENCY(Hz) INPUT

OUTPUT

GAIN(Av)=Vo/

dB(20logAV)

RESULT:

9. CRO OPERATION AND ITS MEASUREMENTS

AIM: To observe sine wave, square wave and triangular waveforms on the C.R.O. and to
measure amplitude and frequency of the waveforms.
APPARATUS REQUIRED:

CRO
Function generator and probes

Theory:
An oscilloscope is a test instrument which allows us to look at the 'shape' of electrical
signals by displaying a graph of voltage against time on its screen. It is like a voltmeter with
the valuable extra function of showing how the voltage varies with time. A graticule with a
1cm grid enables us to take measurements of voltage and time from the screen. The graph,
usually called the trace, is drawn by a beam of electrons striking the phosphor Coating of the
screen making it emits light, usually green or blue. This is similar to the Way a television
picture is produced. Oscilloscopes contain a vacuum tube with a cathode (negative electrode)
at one end to emit electrons and an anode (positive electrode) to accelerate them so they
move rapidly down the tube to the screen. This arrangement is called an electron gun. The
tube also contains electrodes to deflect the electron beam up/down and left/right. The
electrons are called cathode rays because they are emitted by the cathode and this gives the
oscilloscope its full name of cathode ray oscilloscope or CRO. A dual trace oscilloscope can
display two traces on the screen, allowing us to easily compare the input and output of an
amplifier for example. It is well worth paying the modest extra cost to have this facility.

Fig: Internal Blocks of CRO

Setting up an oscilloscope:
Oscilloscopes are complex instruments with many controls and they require some care to
set up and use successfully. It is quite easy to 'lose' the trace off the screen if controls are
set wrongly.
There is some variation in the arrangement and labeling of the many controls. So,
the following instructions may be adapted for this instrument.
1. Switch on the oscilloscope to warm up (it takes a minute or two).
2. Do not connect the input lead at this stage.
3. Set the AC/GND/DC switch (by the Y INPUT) to DC.
4. Set the SWP/X-Y switch to SWP (sweep).
5. Set Trigger Level to AUTO.
6. Set Trigger Source to INT (internal, the y input).
7. Set the Y AMPLIFIER to 5V/cm (a moderate value).
8. Set the TIMEBASE to 10ms/cm (a moderate speed).
9. Turn the time base VARIABLE control to 1 or CAL.
10. Adjust Y SHIFT (up/down) and X SHIFT (left/right) to give a trace across the middle of
the screen, like the picture.
11. Adjust INTENSITY (brightness) and FOCUS to give a bright, sharp trace.
The following type of trace is observed on CRO after setting up, when there is no input signal
connected.

Fig: absence of input signal

Terms used in CRO in association with signal:

 Amplitude is the maximum voltage reached by the signal. It is measured in volts.

Peak voltage is another name for amplitude.
Peak-peak voltage is twice the peak voltage (amplitude). When reading an
oscilloscope trace it is usual to measure peak-peak voltage.
Time period is the time taken for the signal to complete one cycle.
It is measured in seconds (s), but time periods tend to be short so milliseconds (ms)
and microseconds (s) are often used. 1ms = 0.001s and 1s = 0.000001s.
Frequency is the number of cycles per second. It is measured in hertz (Hz), but
frequencies tend to be high so kilohertz (kHz) and megahertz (MHz) are often used.
1kHz = 1000Hz and 1MHz = 1000000Hz.

Voltage: voltage is shown on the vertical y-axis and the scale is determined by the YAmplifier (Volts/ div) control . usually peak to peak voltage is measured because it can be
read correctly even if the position of 0V is not known. The amplitude is half the peak to peak
voltage.
Voltage= distance in cm * volts/cm
Time period: time is shown on the horizontal x-axis and the scale is determined by the time
base (time/cm) control. The time period is the time for one cycle of the signal. The frequency
is the number of cycles per second, frequency= 1/time period.
Time=distance in cm * time / cm
Procedure:
1. Connect function generator output at the input of C.R.O. at channel 1 or at channel 2
2. Select proper channel i.e. if signal is connected to channel 1 select CH1 and if signal is
connected to channel 2 select CH2
3. Adjust Time /Div knob to get sufficient time period displacement of the wave on the CRO
screen.
4. With fine tuning of time/Div make the waveform steady on screen as shown in following
fig

Fig: steady waveform

5. Use triggering controls if waveform is not stable

6. Keep volt/div knob such that waveform is visible on the screen without clipping
7. Measure P-P reading along y-axis. This reading multiplied with volt/div gives peak to peak
amplitude of the ac i/p wave.
8. Measure horizontal division of one complete cycle. This division multiplied by time/div
gives time period of the i/p wave.
9. Calculate frequency using formula f = 1/T.
10. Note down your readings in the observation table

Result:.

VIVA QUESTIONS:
1. What is meant by CRO?
2. What is the principle behind CRO operation?
3. How beams are formed in CRO?

4. What is called deflection in horizontal and vertical plane?

5. Name few companies that manufacture CRO

10. FREQUENCY RESPONSE OF COMMON EMITTER AMPLIFIER

AIM:
To design the frequency response of Common Emitter Amplifier and calculate the band
width
COMPONENTS REQUIRED:
S.N Apparatus
o 1. BJT Transistor
2. Resistance
3. Variable Resistance
4. Regulated Power Supply

Type

Range

BC107
1K,3.3 K,4.7 K, 470
0-100 K
(0-30)V

5. Function generator and CRO

6. Capacitors
7. Bread board

CIRCUIT DIAGRAM:

10 F/ 25V, 100 F/ 25 V

Quantit
y1
1,3,1,1,1
1

THEORY:
The CE amplifier provides high gain & wide frequency response. The emitter lead is
common to both input and output circuits and is grounded. The emitter base circuit is forward
biased. The collector current is controlled by the base current rather than emitter current. The
input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current. Frequency response of an amplifier is defined as the variation of gain with
respective frequency.
The gain of the amplifier increases as the frequency increases from zero till it
becomes maximum at lower cutoff frequency and remains constant till higher cutoff
frequency and then it falls again as the frequency increases.At low frequencies the reactance
of coupling capacitor Cc is quite high and hence very small part of signal will pass through
from one stage to the next stage. At high frequencies the reactance of inter electrode
capacitance is very small and behaves as a short circuit.
This increases the loading effect on next stage and service to reduce the voltage gain
due to these reasons the voltage gain drops at high frequencies. At mid frequencies the effect
of coupling capacitors is negligible and acts like short circuit, where as inter electrode
capacitors acts like open circuit. So, the circuit becomes resistive at mid frequencies and the
voltage gain remains constant during this range.
EXPERIMENT PROCEDURE:

1. Connect the circuit as shown in circuit diagram

2. Set Vcc 10v and adjust Vce to 5v to operate the transistor in active region.
3. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function
Generator
4. Measure the Output Voltage Vo (p-p) Tabulate the readings in the tabular form.
5. For plotting the frequency response the input voltage is kept Constant at 20mV peakto-peak and the frequency is varied from 100Hz to 1MHz Using function generator
6. All the readings are tabulated and voltage gain in dB is calculated by Using The
expression Av=20 log10 (V0/Vi)
7. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis On Semi-log
graph.

OBSERVATIONS:
S.No FREQUENCY(Hz) INPUT

OUTPUT

GAIN(Av)=Vo/

dB(20logAV)

RESULT:

PRELAB QUESTIONS:
1. What are the advantages and disadvantages of single-stage amplifiers?
2. Why gain falls at HF and LF?
3. Explain the function of emitter bypass capacitor, Ce?
4. How the band width will effect as more number of stages are cascaded?
5. Define frequency response?
6. What is the phase difference between input and output waveforms of a CE
amplifier?
7. What is Early effect?

11. FREQUENCY RESPONSE OF EMITTER FOLLOWER

AIM:
To design the frequency response of Emitter follower Amplifier and calculate the band
width
COMPONENTS REQUIRED:
S.No

Apparatus

Type

1.

BJT Transistor

BC107

2.

Resistance

3.

Variable Resistance

4.

Regulated Power Supply

5.

Function generator and CRO

6.

Capacitors

7.

Bread board

CIRCUIT DIAGRAM:

Range

1K,3.3 K,4.7 K, 470

0-100 K
(0-30)V

10 F/ 25V, 100 F/ 25 V

Quantit
y1
1,3,1,1,1
1

THEORY:
In common-collector amplifier the input is given at the base and the output is taken at
the emitter. In this amplifier, there is no phase inversion between input and output. The input
impedance of the CC amplifier is very high and output impedance is low. The voltage gain is
less than unity. Here the collector is at ac ground and the capacitors used must have a
negligible reactance at the frequency of operation. This amplifier is used for impedance
matching and as a buffer amplifier. This circuit is also known as emitter follower. The most
common use of the emitter follower is as a circuit, which performs the function of impedance
transformation over a wide range of frequencies.
EXPERIMENT PROCEDURE:
1. Connect the circuit as shown in circuit diagram
2. Set Vcc 10v and adjust Vce to 5v to operate the transistor in active region.
3. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function
Generator
4. Measure the Output Voltage Vo (p-p) Tabulate the readings in the tabular form.
5. For plotting the frequency response the input voltage is kept Constant at 20mV peakto-peak and the frequency is varied from 100Hz to 1MHz Using function generator
6. All the readings are tabulated and voltage gain in dB is calculated by Using The
expression Av=20 log10 (V0/Vi)
7. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis On Semi-log
graph.
8. The Bandwidth of the amplifier is calculated from the graph using the Expression,

Model graph:

Bandwidth BW=f2-f1
Where f1 is lower cut-off frequency of CC amplifier
f2 is upper cut-off frequency of CC amplifier
OBSERVATIONS:
S.No FREQUENCY(Hz) INPUT

OUTPUT

GAIN(Av)=Vo/

dB(20logAV)

RESULT:

VIVA QUESTIONS:
1. What is maximum voltage gain of CC amplifier
2. Why gain falls at low and high frequencies?
3. What is transition frequency?
4. How 3DB is found in semi-log graph?
5. What are the characteristics of emitter follower?

12. FREQUENCY RESPONSE OF COMMON SOURCE FET AMPLIFIER

AIM:
To design and get the frequency response of common source amplifier
COMPONENTS REQUIRED:
S.No

Apparatus

Type

1.

FET Transistor

2N4392

2.

Resistance

1K,1M,

1,3,1,1

3.

Regulated Power Supply

(0-30)V

4.

Capacitors

2,1

5.

Voltmeter

10 F/ 25V, 100 F/ 25
V
(0-1)V,(0-30)V

6.

Bread board and connecting

wires
Function generator and CRO

7.

CIRCUIT DIAGRAM:

Range

Quantity
1

THEORY:
The FET is a type of transistor commonly used for weak signal amplification. The
device can amplify analog or digital signals. It can also switch DC or function as an
oscillator. In the FET current flows along a semiconductor path called the channel. At one end
of the channel, there is an electrode called source.
At the other end of the channel there is an electrode called the drain. Frequency
response of an amplifier is defined as the variation of gain with respective frequency. The
gain of the amplifier increases as the frequency increases from zero till it becomes maximum
at lower cut-off frequency and remains constant till higher cut-off frequency and then it falls
again as the frequency increases.
At mid frequencies the effect of coupling capacitors is negligible and acts like short
circuit, whereas inter electrode capacitors acts like open circuit. So, the circuit becomes
resistive at mid frequencies and the voltage gain remains constant during this range
EXPERIMENT PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Set Vdd 10v and adjust the Vds to 5v.
3. A signal of 2 KHz frequency and 20mV peak-to-peak is applied at the input of
amplifier.
4. Output is taken at drain and gain is calculated by using the expression, Av=V0/Vi
5. Voltage gain in dB is calculated by using the expression, Av=20log 10(V0/Vi)
6. Plot Av vs. Frequency, The Bandwidth of the amplifier is calculated.
OBSERVATIONS:
S.No FREQUENCY(Hz) INPUT

OUTPUT

GAIN(Av)=Vo/

dB(20logAV)

RESULT:

PRELAB QUESTIONS:
1. What is the difference between FET and BJT?
2. FET is unipolar or bipolar?
3. Draw the symbol of FET?
4. What are the applications of FET?
5. FET is voltage controlled or current controlled?
ADDITIONAL EXPERIMENTS
1. BRIDGE RECTIFER
AIM: To calculate the ripple factor of a bridge rectifier, with and without filters.
COMPONENTS REQUIRED:
S.No
1
2
3
4
5
6
7

Apparatus
Diode
Resistance
Regulated Power Supply
CRO
Transformer
Capacitor
Bread board and connecting wires

Type
IN4001

Range
470
(0-30)V
6-0-6 V
47F

Quantity
1
1
1
1
1
1

THEORY:
The bridge rectifier is also a full-wave rectifier in which four p-n diodes are connected
in the form of a bridge fashion. The Bridge rectifier has high efficiency when compared to

half-wave rectifier. During every half cycle of the input, only two diodes will be conducting
while other two diodes are in reverse bias.
CIRCUIT DIAGRAM:

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Connect the ac main to the primary side of the transformer and secondary side to the bridge
rectifier.
3. Measure the ac voltage at the input of the rectifier using the multi meter.
4. Measure both the ac and dc voltages at the output of the Bridge rectifier.
5. Find the theoretical value of dc voltage by using the formula.

Model waveforms:

Tabular column:
Ripple Factor
S.No

RL

Vac

Vdc

Vac/Vdc
(with filter)

1.
2.
3.
4.

RESULT:

Ripple Factor
Vac/Vdc
(without filter)

2. INPUT AND OUTPUT CHARACTERISTICS OF TRANSISTOR IN CB

CONFIGURATION
AIM: To draw the input and output characteristics and to determine the hybrid parameters of
a given transistor in COMMON BASE configuration.
COMPONENTS REQUIRED:
S.No
1.
2.
3.
4.
5.
6.

Apparatus
Transistor
Resistance
Regulated Power Supply
Ammeter
Voltmeter

Type
BC107

Range
1K
(0-30)V
(0-100)mA
(0-10)V

Quantity
1
1
1
2
2

Bread board and connecting wires

EXPERIMENT PROCEDURE:
INPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage VCB is kept constant at 0V
and for different values of VEB note down the values of IE.
3. Repeat the above step keeping VCB at 2V, 4V.All the readings are tabulated.
4. A graph is drawn between VEB and IE for constant VCB.

OUTPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input IE is kept constant at 10m A and
for different values of VCB, note down the values of IC.
3. Repeat the above step for the values of IE at 20 mA, 40 mA, and 60 mA, all the
readings are tabulated.
4. A graph is drawn between VCB and Ic for constant IE

CIRCUIT DIAGRAM:

MODEL GRAPH:
INPUT CHARACTERISTICS:

OUTPUT CHARACTERISTICS:

RESULT:

PRE LAB QUESTIONS:

1. What are the applications of CB configuration?
2. Draw different transistor symbols.
3. BJT is a current controlled device. Justify.
4. What happens when we change the biasing condition of the transistors?
5. In which case CB configuration is using.