FQP4N80

FQP4N80
N-Channel QFET MOSFET

800 V, 3.9 A, 3.6
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductors proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
3.9 A, 800 V, RDS(on) = 3.6 (Max) @VGS = 10 V,
ID = 1.95 A
Low Gate Charge (Typ. 19 nC)
Low Crss (Typ. 8.6 pF)
100% Avalanche Tested
D
!
"
G!
G DS
ID
"
"
TO-220
!
FQP Series
Absolute Maximum Ratings

Symbol
VDSS
3 5
S
TC = 25C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)
FQP4N80
800
Unit
V
3.9
2.47
15.6
IDM
Drain Current
VGSS
Gate-Source Voltage
30
EAS
Single Pulsed Avalanche Energy
(Note 2)
460
mJ
IAR
Avalanche Current
(Note 1)
3.9
EAR
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
13
4.0
130
1.04
-55 to +150
mJ
V/ns
W
W/C
C
300
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RCS
Thermal Resistance, Case-to-Sink
0.5
--
C/W
RJA
Thermal Resistance, Junction-to-Ambient
--
62.5
C/W
2000 Fairchild Semiconductor Corporation

FQP4N80 Rev. C0
Max
0.96
Unit
C/W
Symbol
RJC
www.fairchildsemi.com
FQP4N80 N-Channel MOSFET
March 2013
Symbol
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
800
--
--
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/
TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.95
IDSS
IGSSF
IGSSR
VDS = 800 V, VGS = 0 V
--
--
10
VDS = 640 V, TC = 125C
--
--
100
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
--
2.8
3.6
--
3.8
--
--
680
880
pF
--
75
100
pF
--
8.6
12
pF
--
16
40
ns
--
45
100
ns
--
35
80
ns
--
35
80
ns
--
19
25
nC
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.95 A
gFS
Forward Transconductance
VDS = 50 V, ID = 1.95 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 3.9 A,

RG = 25
(Note 4, 5)
VDS = 640 V, ID = 3.9 A,

VGS = 10 V
(Note 4, 5)
--
4.2
--
nC
--
9.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
3.9
ISM
--
--
15.6
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 3.9 A
Drain-Source Diode Forward Voltage
--
--
1.4
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3.9 A,
dIF / dt = 100 A/s
(Note 4)
--
575
--
ns
--
3.65
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 57mH, IAS = 3.9A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 3.9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

FQP4N80 Rev. C0
Electrical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
10
ID, Drain Current [A]
10
-1
10
150 C
0
10
25 C
o
-55 C
Notes :
1. 250s Pulse Test
2. TC = 25
Notes :
1. VDS = 50V
2. 250s Pulse Test
-2
-1
10
-1
10
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
7
1
10
VGS = 10V
5
IDR , Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
VGS = 20V
3
Note : TJ = 25
10
Notes :
1. VGS = 0V
2. 250s Pulse Test
-1
2
0
10
10
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
12
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
800
600
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
400
Crss
200
VDS = 160V
10
VGS, Gate-Source Voltage [V]
1000
Capacitance [pF]
25
150
VDS = 400V
VDS = 640V
2
Note : ID = 3.9A
0
-1
10
0
0
10
10
Figure 5. Capacitance Characteristics

FQP4N80 Rev. C0
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 1.95 A
0.5
0.0
-100
200
-50
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
4
Operation in This Area
is Limited by R DS(on)
1
100s
1 ms
10
10 ms
DC
10
-1
10
Notes :
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
10
10
0
25
10
10
50
100
125
150
Figure 10. Maximum Drain Current

vs. Case Temperature
D = 0 .5
N o te s :
1 . Z J C ( t) = 0 .9 6 / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)
0 .2
10
0 .1
-1
0 .0 5
PDM
0 .0 2
JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature []
0 .0 1
t1
t2
s i n g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve

FQP4N80 Rev. C0
Typical Characteristics
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp

FQP4N80 Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop

FQP4N80 Rev. C0
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
10.08 0.30
(1.00)
13.08 0.20
(45
1.27 0.10
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20

FQP4N80 Rev. C0
Package Dimensions
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I64

FQP4N80 Rev. C0
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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FQP4N80

N-Channel QFET MOSFET

Absolute Maximum Ratings

TC = 25C unless otherwise noted

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

2000 Fairchild Semiconductor Corporation

FQP4N80 N-Channel MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

VDS = 800 V, VGS = 0 V

VDS = 640 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Zero Gate Voltage Drain Current

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 400 V, ID = 3.9 A,

VDS = 640 V, ID = 3.9 A,

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2000 Fairchild Semiconductor Corporation

FQP4N80 N-Channel MOSFET

ID, Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR , Reverse Drain Current [A]

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2000 Fairchild Semiconductor Corporation

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

FQP4N80 N-Channel MOSFET

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

ID, Drain Current [A]

ID, Drain Current [A]

Figure 10. Maximum Drain Current

Figure 9. Maximum Safe Operating Area