IRF630, RF1S630SM

Data Sheet

9A, 200V, 0.400 Ohm, N-Channel Power

MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17412.

Ordering Information
PART NUMBER

PACKAGE

June 1999

File Number

1578.2

Features
9A, 200V
rDS(ON) = 0.400
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol
BRAND

IRF630

TO-220AB

IRF630

RF1S630SM

TO-263AB

RF1S630

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S630SM9A.

Packaging
JEDEC TO-220AB

JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
SOURCE

DRAIN (FLANGE)

4-202

DRAIN
(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF630, RF1S630SM
TC = 25oC, Unless Otherwise Specified

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

IRF630, RF1S630SM
200
200
9
6
36
20
75
0.6
150
-55 to 150

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V (Figure 10)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

Zero Gate Voltage Drain Current

IDSS

On-State Drain Current (Note 2)

ID(ON)

Gate to Source Leakage Current

IGSS

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)
Turn-On Delay Time

rDS(ON)
gfs
td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

MIN

Qg(TOT)

Gate to Source Charge

Qgs

Gate to Drain Miller Charge

Qgd

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Internal Drain Inductance

LD

LS

UNITS

200

25

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

250

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

VGS = 20V

100

nA

ID = 5A, VGS = 10V (Figure 8, 9)

0.25

0.4

VDS > ID(ON) x rDS(ON)MAX, ID = 5A (Figure 12)

4.8

VDD = 90V, ID 9A, RGS = 9.1, VGS = 10V

RL = 9.6
MOSFET Switching Times are Essentially
Independent of Operating Temperature

30

ns

50

ns

50

ns

40

ns

19

30

nC

10

nC

nC

VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS

Ig(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

Measured From the

Contact Screw on Tab to
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Internal Source Inductance

MAX

VDS = Rated BVDSS, VGS = 0V

tf

Total Gate Charge

(Gate to Source + Gate to Drain)

TYP

Measured From the

Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D

600

pF

250

pF

80

pF

3.5

nH

4.5

nH

7.5

nH

1.67

oC/W

80

oC/W

LD
G
LS
S

Thermal Resistance Junction to Case

RJC

Thermal Resistance Junction to Ambient

RJA

4-203

Free Air Operation

IRF630, RF1S630SM
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

TEST CONDITIONS

ISD

Pulse Source to Drain Current

(Note 3)

Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode

ISDM

MIN

TYP

MAX

UNITS

36

Source to Drain Diode Voltage (Note 2)

TJ = 25oC, ISD = 9A, VGS = 0V (Figure 13)

trr

TJ = 150oC, ISD = 9A, dISD/dt = 100A/s

450

ns

QRR

TJ = 150oC, ISD = 9A, dISD/dt = 100A/s

VSD

Reverse Recovery Time

Reverse Recovery Charge
NOTES:

2. Pulse Test: Pulse width 300s, Duty Cycle 2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 20V, starting TJ = 25oC, L = 3.37mH, RG = 50, peak IAS = 9A.

Typical Performance Curves

Unless Otherwise Specified

10

ID, DRAIN CURRENT (A)

1.0

0.8
0.6
0.4
0.2
0

50

100

0
25

150

50

TC, CASE TEMPERATURE (oC)

75

100

150

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

ZJC, NORMALIZED TRANSIENT

THERMAL IMPEDANCE

POWER DISSIPATION MULTIPLIER

1.2

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1.0
0.5
0.2
0.1
0.1 0.05
0.02
0.01

PDM

t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC RJC + TC

SINGLE PULSE

0.01
10-5

10-4

10-3

10-2

10-1

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

4-204

10

IRF630, RF1S630SM
Typical Performance Curves

Unless Otherwise Specified (Continued)

100

20

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

VGS = 10V

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 8V
10s
100s

10

1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)

10ms
100ms
DC

16

12

VGS = 5V
4
VGS = 4V

100
10
VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

TJ = MAX RATED
TC = 25oC

0.1

VGS = 7V

1000

VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 9V

125oC

25oC

-55oC
2

0
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

3
4
2
5
VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

2.2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE

2s PULSE TEST
VGS = 10V

0.6
ON RESISTANCE

rDS(ON), DRAIN TO SOURCE

0.8

100

VGS = 4V

80

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS > ID(ON) x rDS(ON)MAX

VGS = 10V

60

FIGURE 5. OUTPUT CHARACTERISTICS

10

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

40

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

10

20

0.4

VGS = 20V
0.2

1.8

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 5A

1.4

0.6

0.2
0

10

20

30

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-205

40

-40

40

80

120

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF630, RF1S630SM
Typical Performance Curves

Unless Otherwise Specified (Continued)

2000
VGS = 0V, f = 1MHz
CISS = CGS + CGD, CDS
CRSS = CGD
COSS = CDS + CGD

ID = 250A
1.15

1600
C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

1.25

1.05

0.95

0.85

1200

800
CISS
400
COSS
CRSS

0.75
-40

40

80

120

160

10

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

ISD, SOURCE TO DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
8

55oC
25oC

125oC

150oC
10

25oC

10

ID , DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

ID = 9A
VDS = 40V

15

V20
DS = 100V

10

VDS = 160V
IRF630, IRF632

0
0

16

24

32

40

Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-206

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

20

50

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

100

0
0

40

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

30

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

IRF630, RF1S630SM
Test Circuits and Waveforms
VDS
BVDSS
L

tP

VARY tP TO OBTAIN

RG

REQUIRED PEAK IAS

VGS

VDS

IAS

VDD

VDD

DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

0.2F

50%
PULSE WIDTH

10%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

12V
BATTERY

50%

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd

0.3F

VGS

Qgs
D
VDS
DUT

0
Ig(REF)

0
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-207

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORMS

IRF630, RF1S630SM

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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4-208

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