ON Semiconductor

SWITCHMODE
Series
NPN Silicon Power Transistors
These devices are designed for highvoltage, highspeed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.

MJE13005 *
*ON Semiconductor Preferred Device

4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
75 WATTS

SPECIFICATION FEATURES:

VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100
C
Inductive Switching Matrix 2 to 4 Amp, 25 and 100
C

tc @ 3A, 100
C is 180 ns (Typ)

700 V Blocking Capability
SOA and Switching Applications Information.

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

3
CASE 221A09
TO220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO(sus)

400

Vdc

CollectorEmitter Voltage

VCEV

700

Vdc

Emitter Base Voltage

VEBO

Vdc

Collector Current Continuous

Peak (1)

IC
ICM

4
8

Adc

Base Current Continuous

Peak (1)

IB
IBM

2
4

Adc

Emitter Current Continuous

Peak (1)

IE
IEM

6
12

Adc

Total Power Dissipation @ TA = 25
C

Derate above 25
C

PD

2
16

Watts
mW/
C

Total Power Dissipation @ TC = 25
C

Derate above 25
C

PD

75
600

Watts
mW/
C

TJ, Tstg

65 to +150

C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

Characteristic

RJA

62.5

C/W

Thermal Resistance, Junction to Case

RJC

1.67

C/W

TL

275

C

Maximum Lead Temperature for Soldering

Purposes: 1/8 from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 6

Publication Order Number:

MJE13005/D

MJE13005

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

400

Vdc

1
5

*OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage

(IC = 10 mA, IB = 0)

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100
C)

ICEV

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

IEBO

mAdc

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

Clamped Inductive SOA with Base Reverse Biased

IS/b

See Figure 11

RBSOA

See Figure 12

*ON CHARACTERISTICS

DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)

hFE

10
8

60
40

0.5
0.6
1
1

1.2
1.6
1.5

fT

MHz

Cob

65

pF

td

0.025

0.1

tr

0.3

0.7

ts

1.7

tf

0.4

0.9

tsv

0.9

tc

0.32

0.9

tfi

0.16

CollectorEmitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 4 Adc, IB = 1 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100
C)

VCE(sat)

BaseEmitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100
C)

VBE(sat)

Vdc

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 2)
Delay Time
Rise Time

Storage Time

(VCC = 125 Vdc, IC = 2 A,

IB1 = IB2 = 0.4
0 4 A,
A tp = 25 s,
s
Duty Cycle  1%)

Fall Time

Inductive Load, Clamped (Table 2, Figure 13)

Voltage Storage Time
Crossover Time

Vd
(IC = 2 A
A, Vclamp = 300 Vdc,
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100
100
C)
C)

Fall Time

*Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

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VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

MJE13005
100

hFE , DC CURRENT GAIN

70

TJ = 150C

50

25C

30
20

-
55C

10

VCE = 2 V
VCE = 5 V

7
5
0.04 0.06

0.1

0.4 0.6
0.2
1
IC, COLLECTOR CURRENT (AMP)

2
TJ = 25C
1.6
IC = 1 A

VCE(sat) , COLLECTOR-EMITTER SATURATION

VOLTAGE (VOLTS)

VBE, BASE-EMITTER VOLTAGE (VOLTS)

0.9

TJ = -
55C
25C

0.7
25C
0.5

150C

0.3
0.04 0.06

0.1

0.2

0.4

0.6

0.4
0
0.03

0.55
IC/IB = 4
0.45
TJ = -
55C

0.35
25C

0.25
0.15

150C

0.05
0.04 0.06

0.1

0.2

0.4

0.6

2k

C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT (A)

Figure 4. CollectorEmitter Saturation Voltage

TJ = 150C
125C
100C
75C
50C
25C
0.1
-
0.4

0.2 0.3
0.5 0.7
IB, BASE CURRENT (AMP)

Figure 3. BaseEmitter Voltage

1k

0.1

IC, COLLECTOR CURRENT (AMP)

VCE = 250 V

10

0.05

IC, COLLECTOR CURRENT (AMP)

10 k

100

4A

Figure 2. Collector Saturation Region

1.3
VBE(sat) @ IC/IB = 4
VBE(on) @ VCE = 2 V

3A

0.8

Figure 1. DC Current Gain

1.1

2A

1.2

REVERSE

300
200
100
70
50
30

FORWARD

-
0.2
+
0.2
+
0.4
0
VBE, BASE-EMITTER VOLTAGE (VOLTS)

Cib

1k
700
500

20
0.3

+
0.6

Cob
0.5

10
30
1 3 5
50
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

Figure 5. Collector Cutoff Region

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100

300

MJE13005
ICPK

Vclamp

90% Vclamp
IC

90% IC

trv

tsv

tfi

tti

tc
VCE
IB

10% Vclamp
90% IB1

10%
ICPK

2% IC

TIME

Figure 7. Inductive Switching Measurements

Table 1. Typical Inductive Switching Performance

IC
AMP

TC

C

tsv
ns

trv
ns

tfi
ns

tti
ns

tc
ns

25
100

600
900

70
110

100
240

80
130

180
320

25
100

650
950

60
100

140
330

60
100

200
350

25
100

550
850

70
110

160
350

100
160

220
390

NOTE: All Data recorded in the inductive Switching Circuit In Table 2.

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 1090% Vclamp
tfi = Current Fall Time, 9010% IC
tti = Current Tail, 102% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching
waveforms is shown in Figure 7 to aid in the visual identity
of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN222:
PSWT = 1/2 VCCIC(tc)f

In general, t rv + tfi
tc. However, at lower test currents

this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a SWITCHMODE transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100
C.

RESISTIVE SWITCHING PERFORMANCE

1

10
VCC = 125 V
IC/IB = 5
TJ = 25C

0.5
0.2

t, TIME (s)

t, TIME (s)

tr

0.1
0.05

td @ VBE(off) = 5 V

0.01
0.04

2
1
0.5
0.3

0.02

VCC = 125 V
IC/IB = 5
TJ = 25C

ts

tf

0.2
0.1

0.2

0.4

0.1
0.04

0.1

0.2

0.5

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 8. TurnOn Time

Figure 9. TurnOff Time

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MJE13005
Table 2. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

+
5 V
1N4933 33

TEST CIRCUITS

0.001 F
PW

2N222
2

1k

68

+125 V
MR826*

1k

T.U.T.
47 100
1/2 W

NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1

5.1 k

IB

2N2905

Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16

Vclamp

IC

RB

1k
+
5 V
1N493
3
0.02 F 270

CIRCUIT
VALUES

MJE210

33 1N4933

5V

DUTY CYCLE 10%

tr, tf 10 ns

VCC

RB

TEST WAVEFORMS

IC(pk)

51

D1

VCE

-
4.0 V

-VBE(off)
VCC = 125 V
RC = 62
D1 = 1N5820 or Equiv.
RB = 22

VCC = 20 V
Vclamp = 300 Vdc

t1
VCE

tf

VCE or
Vclamp

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

TIME

1
0.7
0.5

-8 V

Lcoil (ICpk)
Vclamp

tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC

0.1

0.1

0.02
0.01
SINGLE PULSE
0.02

0.05

0.1

P(pk)

ZJC(t) = r(t) RJC

RJC = 1.67C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZJC(t)

0.05

0.02
0.01
0.01

Test Equipment
ScopeTektronics
475 or Equivalent

0.2

0.2

0.03

25 s

D = 0.5

0.3

0.07
0.05

Lcoil (ICpk)
t1
VCC
t2

t2

+10 V

t1 ADJUSTED TO
OBTAIN IC

SCOPE

MJE200

GAP for 200 H/20 A

Lcoil = 200 H

tf CLAMPED
tf UNCLAMPED t2

RC

*SELECTED FOR 1 kV

OUTPUT WAVEFORMS
IC

TUT

0.2

0.5

2
5
t, TIME (ms)

10

20

Figure 10. Typical Thermal Response [ZJC(t)]

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t1

t2

DUTY CYCLE, D = t1/t2

50

100

200

500

1k

MJE13005
SAFE OPERATING AREA INFORMATION
The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.
4

5
2

IC(pk) , COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10
500 s

5 ms
dc

1
0.5

1 ms

0.2
0.1

0.05
0.02
0.01

MJE13005
5

10

20

30

50

70 100

200 300

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VBE(off) = 9 V

1
MJE13005
0

500
400

TC 100C
IB1 = 2.0 A

100

200

300

400

500

600

5V
3V
1.5 V
700
800

VCE, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)

Figure 11. Forward Bias Safe Operating Area

Figure 12. Reverse Bias Switching Safe Operating Area

FORWARD BIAS

REVERSE BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TC = 25
C; T J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC 25
C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
T J(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.

For inductive loads, high voltage and high current must be

sustained simultaneously during turnoff, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during
reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives the complete RBSOA
characteristics.

POWER DERATING FACTOR

1
SECOND BREAKDOWN
DERATING

0.8
0.6

THERMAL
DERATING

0.4

0.2
0

20

40

60

80

100

120

140

TC, CASE TEMPERATURE (C)

Figure 13. Forward Bias Power Derating

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160

MJE13005
PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA

T
B

SEATING
PLANE

F
T

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

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NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

MJE13005

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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MJE13005/D