Академический Документы
Профессиональный Документы
Культура Документы
Power Electronics I
Power Diode
Power Transistor
SCR (Silicon Controlled Rectifier) or Thyristor
MOSFET(Metal Oxide Semiconductor Field Effect Xtor)
IGBT (Insulated Gate Bipolar Transistor)
DIAC
TRIAC
Light Activated SCRs (LASCRs)
Reverse Conducting Thyristor(RCT)
Asymmetrical SCR (ASCR)
Gate turn-off Thyristors (GTOs)
MOS controlled Thyristors (MCTs),
UJT (Uni Junction Transistor)
Static Induction Transistor
Symbol
Appearance
Three layer
Heavily doped n+ layer
Lightly doped n layer
Heavily doped p+ layer
Heavily doped p+ layer is diffused
into n layer to form Anode &
n+ layer form Cathod
Function of n layer is to absorb
the depletion layer of RB p+ n Junction J1
Breakdown voltage depend on the width of n layer
Drawback of add n layer is add ohmic resistance when it is
conducting in FB
So large power dissipation in Power Diode & proper cooling is
requred
7/5/2016
IRM =
7/5/2016
Schottky Diode :
2. Power Transistor
It is a controllable(characteristic Control) device
ON when current signal is given to terminal
It is ON up to control signal is present
It shows line AB
7/5/2016
Divided by IC
ODF may be 4 or 5
7/5/2016
3. Power MOSFET:
Three terminals : (1) Drain (D) (2) Source (S) (3) Gate (G)
Voltage controlled device
Unipolar device
MOSFET free from second break-down
Used in low power, High frequency converter application
Two type of MOSFET
(1) p-channel MOSFET
(2) n-channel MOSFET
n-channel MOSFET
7/5/2016
7/5/2016
Switching Characteristics :
Switching characteristic of power MOSFET are extented
bcause of internal capacitance & internal impedance
of gate drive ckt.
At turn on, delay tdn- during
which i/p C is charge upto
threshold volt. VGST
During tr gate voltage
rises upto VGSP , sufficient volt.
to dive voltage
tdf (turn off delay time) during which input capacitance start
discharge from V1 to VGSP
PMOSFET
BJT
Collector
3. Unipolar Device
3. Bipolar Device
5.Lower Switching losses but high 5. Higher switching losses but low
conduction loss
conduction losses
resistance
7/5/2016
Internal Structure
Circuit Symbol
7/5/2016
IGBT Characteristic
Static Characteristic
Transfer Characteristic
Application of IGBT
1. AC & DC motor Drives
2. Power Supply
3. UPS
4. High Frequency application upto 50 Khz)
7/5/2016
10