2SK1056, 2SK1057, 2SK1058

Silicon N-Channel MOS FET

Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162

Features

Good frequency characteristic

High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier

2SK1056, 2SK1057, 2SK1058

Outline

TO-3P

D
1

3
1. Gate
2. Source
(Flange)
3. Drain

Absolute Maximum Ratings (Ta = 25C)

Item
Drain to source voltage

2SK1056

Symbol

Ratings

Unit

VDSX

120

2SK1057

140

2SK1058

160

Gate to source voltage

VGSS

15

Drain current

ID

Body to drain diode reverse drain current

I DR

Channel dissipation

Pch*

100

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

Note:

1. Value at TC = 25C

2SK1056, 2SK1057, 2SK1058

Electrical Characteristics (Ta = 25C)
Item

Symbol Min

Drain to source

2SK1056 V(BR)DSX

120

breakdown voltage

2SK1057

140

2SK1058

160

Typ

Max

Unit

Test conditions

I D = 10 mA, VGS = 10 V

Gate to source breakdown

voltage

V(BR)GSS

15

I G = 100 A, VDS = 0

Gate to source cutoff voltage

VGS(off)

0.15

1.45

I D = 100 mA, VDS = 10 V

Drain to source saturation

voltage

VDS(sat)

12

I D = 7 A, VGD = 0 *1

Forward transfer admittance

|yfs|

0.7

1.0

1.4

I D = 3 A, VDS = 10 V *1

Input capacitance

Ciss

600

pF

VGS = 5 V, VDS = 10 V,

Output capacitance

Coss

350

pF

f = 1 MHz

Reverse transfer capacitance

Crss

10

pF

Turn-on time

t on

180

ns

Turn-off time

t off

60

ns

Note:

VDD = 20 V, ID = 4 A,

1. Pulse test

2SK1056, 2SK1057, 2SK1058

Maximum Safe Operation Area

Power vs. Temperature Derating

20

Ta = 25C

100

tio

ra

pe

(T C

)
C

25

50

ID max (Continuous)
P PW
5
PW W = = 1
10 0 m
=
0 s
1
m 1
s
s sh
1
2
1 ot
sh
sh
ot
ot
1.0
O

Drain Current ID (A)

10

C
D

0.5
2SK1056
0

50
100
Case Temperature TC (C)

0.2
5

150

Typical Output Characteristics

1.0
TC = 25C

7
6

5
4

Pch =

100 W

VDS = 10 V

C=

0.8

VGS = 10 V
9
8

Drain Current ID (A)

Drain Current ID (A)

500
10
20
50 100 200
Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

10

2SK1057
2SK1058

2
5C
25
75

Channel Dissipation Pch (W)

150

0.6

0.4

0.2
2
1
0

10
20
40
50
30
Drain to Source Voltage VDS (V)

0.4
0.8
1.6
2.0
1.2
Gate to Source Voltage VGS (V)

2SK1056, 2SK1057, 2SK1058

Drain to Source Voltage vs.
Gate to Source Voltage

Drain to Source Saturation

Voltage vs. Drain Current

VGD = 0

25

75

10

TC

25

Drain to Source Voltage VDS (V)

Drain to Source Saturation Voltage

VDS (on) (V)

10

2
1.0
0.5

0.2
0.1
0.1

0.2

0.5 1.0
2
Drain Current ID (A)

6
5A
4

10

Input Capacitance vs. Gate

Source Voltage

500

200
VDS = 10 V
f = 1 MHz
100
0

2
4
6
8
10
Gate to Source Voltage VGS (V)

2A
ID = 1 A
6
2
4
8
10
Gate to Source Voltage VGS (V)

Forward Transfer Admittance

vs. Frequency
Forward Transfer Admittance yfs (S)

Input Capacitance Ciss (pF)

1000

TC = 25C

3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k

TC = 25C
VDS = 10 V
ID = 2 A

30 k 100 k 300 k 1 M 3 M
Frequency f (Hz)

10 M

2SK1056, 2SK1057, 2SK1058

Switching Time vs. Drain Current

Switching Time ton,toff (ns)

500
t on

200
100
50

t off
20
10
5
0.1

0.2

0.5 1.0
2
Drain Current ID (A)

10

Switching Time Test Circuit

Output
RL= 2
Input

PW = 50s
duty ratio
=1%

20 V

50

Waveforms
90 %
Input
10 %
t on

t off
10 %

Output

90 %

15.6 0.3

1.5

0.3

19.9 0.2

2.0

14.9 0.2

0.5

1.0

3.2 0.2

5.0 0.3

Unit: mm
4.8 0.2

1.6
2.0

1.4 Max

18.0 0.5

2.8

1.0 0.2

3.6

5.45 0.5

0.6 0.2

0.9
1.0

5.45 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)

TO-3P

Conforms
5.0 g

Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223

Hitachi Europe GmbH

Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.