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SPA11N80C3
Cool MOS Power Transistor
Feature
New revolutionary high voltage technology
VDS
800
RDS(on)
0.45
ID
11
PG-TO220-3-31 PG-TO220
Improved transconductance
P-TO220-3-31
Type
Package
Ordering Code
Marking
SPP11N80C3
PG-TO220
Q67040-S4438
11N80C3
SPA11N80C3
PG-TO220-3-31 SP000216320
11N80C3
Maximum Ratings
Symbol
Parameter
Value
SPP
Unit
SPA
ID
TC = 25 C
11
111)
TC = 100 C
7.1
7.11)
33
33
ID puls
EAS
470
470
EAR
0.2
0.2
IAR
11
11
VGS
20
20
VGS
30
30
Ptot
156
41
Tj , Tstg
mJ
ID=2.2A, VDD=50V
Rev. 2.4
Page 1
-55...+150
W
C
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
Maximum Ratings
Parameter
Symbol
dv/dt
Value
Unit
50
V/ns
Values
Unit
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
RthJC
0.8
RthJC_FP
3.7
RthJA
62
RthJA_FP
80
Tsold
260
K/W
Symbol
Conditions
Values
Unit
min.
typ.
max.
800
870
2.1
3.9
breakdown voltage
Gate threshold voltage
VGS(th)
I DSS
VDS=800V, V GS=0V,
I GSS
Rev. 2.4
RG
Tj=25C
0.5
20
Tj=150C
200
VGS=20V, V DS=0V
100
VGS=10V, ID=7.1A
Tj=25C
0.39
0.45
Tj=150C
1.1
0.7
Page 2
nA
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
Electrical Characteristics
Parameter
Transconductance
Symbol
gfs
Conditions
VDS2*ID*R DS(on)max,
Values
Unit
min.
typ.
max.
7.5
S
pF
ID=7.1A
Input capacitance
Ciss
VGS=0V, VDS=25V,
1600
Output capacitance
Coss
f=1MHz
800
Crss
40
44.3
33.9
VGS=0V,
energy related
VDS=0V to 480V
td(on)
VDD=400V, VGS=0/10V,
25
Rise time
tr
ID=11A,
15
td(off)
RG =7.5
72
82
Fall time
tf
10
25
50
60
ns
Qgs
Qgd
Qg
VDD=640V, ID=11A
VDD=640V, ID=11A,
nC
VGS=0 to 10V
o(er)
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5C
o(tr)
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.4
Page 3
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
Electrical Characteristics
Parameter
Symbol
IS
Conditions
Values
Unit
min.
typ.
max.
11
33
TC=25C
forward current
Inverse diode direct current,
I SM
pulsed
Inverse diode forward voltage
VSD
1.2
t rr
VR =640V, IF =IS ,
550
ns
Q rr
diF/dt=100A/s
10
I rrm
33
dirr /dt
1000
A/s
Tj=25C
recovery current
Typical Transient Thermal Characteristics
Value
Symbol
Unit
SPP
SPA
Rth1
0.012
0.012
Rth2
0.023
Rth3
Symbol
Value
Unit
SPP
SPA
Cth1
0.0002493
0.0002493
0.023
Cth2
0.0009399
0.0009399
0.043
0.043
Cth3
0.001298
0.001298
Rth4
0.154
0.176
Cth4
0.003617
0.003617
Rth5
0.175
0.371
Cth5
0.009186
0.00802
Rth6
0.071
2.522
Cth6
0.074
0.412
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.4
Page 4
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
1 Power dissipation
Ptot = f (TC)
Ptot = f (TC)
170
SPP11N80C3
45
140
35
Ptot
Ptot
120
100
30
25
80
20
60
15
40
10
20
0
0
20
40
60
80
100
120
0
0
160
20
40
60
80
100
120
TC
ID = f ( VDS )
ID = f (VDS)
parameter : D = 0 , TC=25C
parameter: D = 0, TC = 25C
10
C 160
TC
10 2
10 1
10 1
ID
ID
10 0
10 -1
10 -2 0
10
Rev. 2.4
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
10 -1
10
10
V
VDS
Page 5
10 -2 0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
10
10
V
VDS
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
5 Transient thermal impedance
ZthJC = f (tp)
ZthJC = f (tp)
parameter: D = tp/T
parameter: D = tp/t
10 1
10 2
K/W
K/W
10 1
ZthJC
ZthJC
10 0
10 -1
10 0
10 -1
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-2
10 -3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
s
tp
10
10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
-1
1
s 10
tp
ID = f (VDS); Tj =25C
ID = f (VDS); Tj =150C
parameter: tp = 10 s, VGS
parameter: tp = 10 s, VGS
35
18
20V
8V
7V
20V
6.5V
6V
14
ID
ID
25
20
6.5V
15
6V
12
5.5V
10
8
5V
6
10
5.5V
5V
4.5V
4V
4V
0
0
Rev. 2.4
12
16
20
0
0
26
V
VDS
Page 6
12
16
20
26
V
VDS
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
4V
2.6
2.2
4.5V
2
5V
2.4
RDS(on)
RDS(on)
SPP11N80C3
2.2
5.5V
1.8
1.6
1.4
1.2
1.8
6V
1.6
0.8
6.5V
1.4
98%
0.6
20V
1.2
1
0.8
0
typ
0.4
0.2
10
12
14
A
ID
0
-60
18
-20
20
60
VGS = f (Q Gate)
parameter: ID = 11 A pulsed
35
16
25C
180
Tj
100
SPP11N80C3
12
ID
VGS
25
10
20
8
150C
15
6
10
0
0
Rev. 2.4
10
12
14
16
0
0
V 20
VGS
20
40
60
80
nC
110
QGate
Page 7
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
13 Forward characteristics of body diode
14 Avalanche SOA
IF = f (VSD)
IAR = f (tAR)
parameter: Tj , tp = 10 s
par.: Tj 150 C
10 2
SPP11N80C3
11
A
A
9
8
IF
IAR
10 1
7
6
5
Tj(START)=25C
10 0
Tj = 25 C typ
Tj = 150 C typ
10 -1
0
0.4
0.8
Tj = 25 C (98%)
Tj = 150 C (98%)
1.2
1.6
2.4 V
Tj(START)=125C
0 -3
10
10
-2
10
-1
10
10
10
s 10
tAR
VSD
15 Avalanche energy
EAS = f (Tj)
V(BR)DSS = f (Tj)
980
SPP11N80C3
mJ
940
V(BR)DSS
E AS
400
350
300
920
900
880
860
250
840
200
820
150
800
780
100
760
50
0
20
Rev. 2.4
740
40
60
80
100
120
720
-60
C 150
Tj
-20
20
60
100
180
Tj
Page 8
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
17 Avalanche power losses
18 Typ. capacitances
PAR = f (f )
C = f (VDS)
200
pF
Ciss
W
PAR
10 3
100
10 2
50
10 1
0 4
10
10
10
Hz
10 0
0
Coss
Crss
100
200
300
400
500
600
800
V
VDS
E oss
0
0
Rev. 2.4
100
200
300
400
500
600
800
V
VDS
Page 9
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
Rev. 2.4
Page 10
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.4
Page 11
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
PG-TO220-3-31 (FullPAK)
Rev. 2.4
Page 12
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.4
Page 13
2005-08-24
Free Datasheet http://www.datasheet4u.net/