SiHP18N50C, SiHF18N50C

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V) at TJ max.

Low Figure-of-Merit Ron x Qg

560

RDS(on) ()

VGS = 10 V

100 % Avalanche Tested

0.225

Qg (Max.) (nC)

76

High Peak Current Capability

Qgs (nC)

21

dV/dt Ruggedness

Qgd (nC)

29

Improved trr/Qrr

Configuration

Single

Improved Gate Charge

High Power Dissipations Capability

TO-220

Compliant to RoHS Directive 2002/95/EC

TO-220 FULLPAK

S
G

GDS

S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220

TO-220 FULLPAK

Lead (Pb)-free

SiHP18N50C-E3

SiHF18N50C-E3

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

500

Gate-Source Voltage

VGS

30

Continuous Drain Current (TJ = 150 C)a

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currentb

Linear Derating Factor

IDM
FULLPAK

0.3
EAS

FULLPAK

Peak Diode Recovery dV/dtd

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d

for 10 s

PD

72
1.8

TO-220

18
11

TO-220

Single Pulse Avalanche Energyc

Maximum Power Dissipation

ID

UNIT

361
223
38

dV/dt

TJ, Tstg

- 55 to + 150
300

W/C
mJ
W
V/ns
C

Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 C, L = 2.5 mH, Rg = 25 , IAS = 17 A.
d. ISD 18 A, dI/dt 380 A/s, VDD VDS, TJ 150 C.
e. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91374
S09-1257-Rev. B, 13-Jul-09

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SiHP18N50C, SiHF18N50C
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)

SYMBOL
TO-220
FULLPAK
TO-220
FULLPAK

TYP.

MAX.

62

RthJA
RthJC

65

0.56

3.29

UNIT

C/W

SPECIFICATIONS TJ = 25 C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)

VDS

VGS = 0 V, ID = 250 A

500

VDS/TJ

Reference to 25 C, ID = 1 mA

0.6

V/C

VGS(th)

VDS = VGS, ID = 250 A

3.0

5.0

Gate-Source Leakage

IGSS

VGS = 30 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

25

VDS = 400 V, VGS = 0 V, TJ = 125 C

250

0.225

0.270

6.4

Drain-Source On-State Resistance

Forward Transconductancea

RDS(on)
gfs

VGS = 10 V

ID = 10 A

VDS = 50 V, ID = 10 A

Dynamic
Input Capacitance

Ciss

VGS = 0 V,

2451

2942

Output Capacitance

Coss

VDS = 25 V,

300

360

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

26

32

Internal Gate Resistance

Rg

f = 1.0 MHz, open drain

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time
Turn-Off Delay Time
Fall Time

tr
td(off)

VGS = 10 V

ID = 18 A, VDS = 400 V

VDD = 250 V, ID = 18 A
Rg = 7.5 , VGS = 10 V

tf

pF

1.1

65

76

21

29

80

27

32

44

18

72

1.5

503

ns

6.7

30

nC

ns

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Current

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Current

IRRM

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 18 A, VGS = 0 V
TJ = 25 C, IF = IS,
dI/dt = 100 A/s, VR = 35 V

Note
a. Repetitive rating; pulse width limited by maximum junction temperature.

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

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Document Number: 91374

S09-1257-Rev. B, 13-Jul-09

SiHP18N50C, SiHF18N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

70

100

VGS
15 V
60
14 V
13 V
12 V
11 V
50
10 V
9.0 V
8.0 V
40
7.0 V
6.0 V
30 Bottom 5.0 V

TJ = 25 C
TJ = 150 C

ID, Drain Current (A)

ID, Drain Current (A)

Top

20

10

TJ = 25 C
1

0.1

7.0 V

10
0

0.01
0

12

18

24

30

TJ = 150 C

ID, Drain Current (A)

7.0 V
10

0
6

12

18

24

30

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 C (TO-220)

Document Number: 91374

S09-1257-Rev. B, 13-Jul-09

RDS(on), Drain-to-Source On Resistance

(Normalized)

40

10

Fig. 3 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics, TC = 150 C (TO-220)

VGS
15 V
14 V
13 V
12 V
30
11 V
10 V
9.0 V
8.0 V
7.0 V
20
6.0 V
Bottom 5.0 V

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Top

3
2.5

ID = 17 A

2
1.5

VGS = 10 V

1
0.5
0
- 60 - 40 - 20

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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SiHP18N50C, SiHF18N50C
Vishay Siliconix

100

105

Capacitance (pF)

104

ISD, Reverse Drain Current (A)

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss

103

102

Coss

10

100

VGS = 0 V

0.1
1000

0.2

0.5

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

1.4

103
Operation in this area limited
by RDS(on)

VDS = 400 V
VDS = 250 V
VDS = 100 V

102

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

1.1

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = 17 A

16

0.8

VSD, Source-to-Drain Voltage (V)

VDS, Drain-to-Source Voltage (V)

20

TJ = 25 C

Crss

10

TJ = 150 C

10

12

10

100 s
1 ms

TC = 25 C
TJ = 150 C
Single Pulse

10 ms

0.1
0

30

60

90

120

102

10

QG, Total Gate Charge (nC)

103

104

VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

ID, Drain Current (A)

20

15

10

0
25

50

75

100

125

150

TC, Case Temperature (C)

Fig. 9 - Maximum Drain Current vs. Case Temperature (TO-220)
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Document Number: 91374

S09-1257-Rev. B, 13-Jul-09

SiHP18N50C, SiHF18N50C
Vishay Siliconix

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1
0.05
0.02

Single Pulse

0.01
10-4

10-2

10-3

0.1

Pulse Time (s)

Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5
0.2
0.1
0.1

0.05

0.02
Single Pulse

0.01
10-4

10-2

10-3

0.1

10

Pulse Time (s)

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-220FP)

VDS

RD

VDS
90 %

VGS
RG

D.U.T.
+
- VDD

10 V
Pulse width 1 s
Duty factor 0.1 %

Fig. 12a - Switching Time Test Circuit

Document Number: 91374

S09-1257-Rev. B, 13-Jul-09

10 %
VGS
td(on)

tr

td(off) tf

Fig. 12b - Switching Time Waveforms

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SiHP18N50C, SiHF18N50C
Vishay Siliconix
L
Vary tp to obtain
required IAS

VDS

D.U.T

RG

+
-

IAS

QG

10 V

V DD

QGS

QGD

10 V
VG

0.01

tp

Fig. 13a - Unclamped Inductive Test Circuit

Charge

VDS
Fig. 14a - Basic Gate Charge Waveform

tp
VDD

Current regulator
Same type as D.U.T.

VDS

50 k

IAS

12 V

0.2 F
0.3 F

Fig. 13b - Unclamped Inductive Waveforms

D.U.T.

VDS

VGS
3 mA

IG
ID
Current sampling resistors

Fig. 14b - Gate Charge Test Circuit

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Document Number: 91374

S09-1257-Rev. B, 13-Jul-09

SiHP18N50C, SiHF18N50C
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

+
-

dV/dt controlled by RG
ISD controlled by duty factor "D"
D.U.T. - device under test

RG

Driver gate drive

P.W.

Period

D=

+
-

VDD

P.W.
Period
VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage

Body diode

VDD

forward drop

Inductor current
Ripple 5 %

ISD

* VGS = 5 V for logic level and 3 V drive devices

Fig. 15 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91374.

Document Number: 91374

S09-1257-Rev. B, 13-Jul-09

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All product specifications and data are subject to change without notice.
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Document Number: 91000

Revision: 18-Jul-08

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