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IHW25N120R2
Soft Switching Series

Reverse Conducting IGBT with monolithic body diode

Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

PG-TO-247-3-21

Applications:
Inductive Cooking
Soft Switching Applications
Type
IHW25N120R2

VCE

IC

VCE(sat),Tj=25C

Tj,max

Marking

Package

1200V

25A

1.6V

175C

H25R1202

PG-TO-247-3-21

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1200

DC collector current
TC = 25C
TC = 100C

IC

Pulsed collector current, tp limited by Tjmax

ICpul s

75

Turn off safe operating area (VCE 1200V, Tj 175C)

75

Diode forward current

IF

A
50
25

TC = 25C

50

TC = 100C

25

Diode pulsed current, tp limited by Tjmax

IFpul s

Diode surge non repetitive current, tp limited by Tjmax

TC = 25C, tp = 10ms, sine halfwave
TC = 25C, tp 2.5s, sine halfwave
TC = 100C, tp 2.5s, sine halfwave

IFSM

Gate-emitter voltage

VGE

Transient Gate-emitter voltage (tp < 10 s, D < 0.01)

75
50
130
120
20

25

Power dissipation TC = 25C

Ptot

Operating junction temperature

365

Tj

-40...+175

Storage temperature

Tstg

-55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

260

J-STD-020 and JESD-022

Power Semiconductors

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series
Thermal Resistance
Parameter

Symbol

Conditions

Max. Value

Unit

RthJC

0.41

K/W

RthJCD

0.41

Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,

RthJA

40

junction ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Value
min.

Typ.

max.

1200

T j =2 5 C

1.6

1.8

T j =1 5 0 C

1.95

T j =1 7 5 C

2.0

Unit

Static Characteristic
Collector-emitter breakdown voltage

V ( B R ) C E S V G E = 0V , I C = 5 00 A

Collector-emitter saturation voltage

VCE(sat)

Diode forward voltage

VF

V G E = 15 V , I C = 25 A

V G E = 0V , I F = 2 5 A
T j =2 5 C

1.5

1.75

T j =1 5 0 C

1.75

T j =1 7 5 C

1.8

5.1

5.8

6.4

Gate-emitter threshold voltage

VGE(th)

I C = 0. 58m A ,
VCE=VGE

Zero gate voltage collector current

ICES

V C E = 12 0 0V ,
V G E = 0V

T j =2 5 C

T j =1 7 5 C

2500

Gate-emitter leakage current

IGES

V C E = 0V , V G E =2 0 V

100

nA

Transconductance

gfs

V C E = 20 V , I C = 25 A

16.3

Integrated gate resistor

RGint

Power Semiconductors

none

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series
Dynamic Characteristic
Input capacitance

Ciss

V C E = 25 V ,

2342

Output capacitance

Coss

V G E = 0V ,

68.7

Reverse transfer capacitance

Crss

f= 1 MH z

55.5

Gate charge

QGate

V C C = 96 0 V, I C =2 5 A

60.7

nC

13

nH

pF

V G E = 15 V
Internal emitter inductance

LE

measured 5mm (0.197 in.) from case

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

324

55.8

Unit

IGBT Characteristic
T j =2 5 C ,
V C C = 60 0 V, I C = 2 5 A
V G E = 0 /1 5 V,
R G = 10 ,

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

1.59

Total switching energy

Ets

1.59

ns

mJ

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

Value
min.

Typ.

max.

373

90.6

Unit

IGBT Characteristic
Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

2.54

Total switching energy

Ets

2.54

Power Semiconductors

T j =1 7 5 C
V C C = 60 0 V, I C = 2 5 A,
V G E = 0 / 15 V ,
R G = 1 0 ,

Rev. 2

ns

mJ

Feb. 07

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IHW25N120R2
Soft Switching Series

tp=1s
10s

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

TC=80C

60A

TC=110C
40A

Ic
20A

20s
10A

50s

500s

1A

5ms
0A
10Hz

DC
100Hz

1kHz

10kHz

100kHz

1V

f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for hard
switching (turn-off)
(Tj 175C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 10)

100V

1000V

50A

350W

IC, COLLECTOR CURRENT

300W

Ptot, DISSIPATED POWER

10V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. IGBT Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=15V)

250W
200W
150W
100W

40A

30A

20A

10A

50W
0W
25C

50C

75C

100C

125C

0A
25C

150C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of
case temperature
(Tj 175C)

Power Semiconductors

50C

75C

100C 125C

150C

TC, CASE TEMPERATURE

Figure 4. DC Collector current as a function
of case temperature
(VGE 15V, Tj 175C)

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series

70A

70A

15V

15V

50A

13V
11V

40A

9V
7V

30A
20A
10A

50A

13V
11V

40A

9V
7V

30A
20A
10A

0A

0A
0V

1V

2V

0V

70A
60A
50A
40A
30A
TJ=175C

20A

25C
10A
0A
0V

2V

4V

6V

8V

10V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic
(VCE=20V)

Power Semiconductors

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic
(Tj = 175C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic
(Tj = 25C)

IC, COLLECTOR CURRENT

VGE=20V

60A

VGE=20V

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

60A

IC=50A

2.5V

2.0V
IC=25A
1.5V
IC=12.5A
1.0V

0.5V

0.0V
0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series

td(off)

1000ns

t, SWITCHING TIMES

t, SWITCHING TIMES

td(off)

100ns

tf

100ns

10ns

0A

10A

20A

30A

40A

50A

60A

tf

10

70A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175C,
VCE=600V, VGE=0/15V, RG=10,
Dynamic test circuit in Figure E)

20

30

40

50

60

70

RG, GATE RESISTOR

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175C, VCE=600V,
VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)

tf

100ns

10ns
25C

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t, SWITCHING TIMES

td(off)

50C

75C

100C

125C

max.
5V
typ.
4V

min.

3V

2V
-50C

150C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=25A, RG=10,
Dynamic test circuit in Figure E)

Power Semiconductors

6V

0C

50C

100C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(IC = 0.6mA)

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series

4.0mJ

Eoff

5.0mJ

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

6.0mJ

Eoff

4.0mJ
3.0mJ
2.0mJ
1.0mJ

2.0mJ

1.0mJ

0.0mJ

0.0mJ
0A

10A

20A

30A

40A

50A

60A

10

70A

IC, COLLECTOR CURRENT

Figure 13. Typical turn-off energy as a
function of collector current
(inductive load, TJ=175C,
VCE=600V, VGE=0/15V, RG=10,
Dynamic test circuit in Figure E)

30

40

50

60

70

80

RG, GATE RESISTOR

Figure 14. Typical turn-off energy as a
function of gate resistor
(inductive load, TJ=175C, VCE=600V,
VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)

Eoff

E, SWITCHING ENERGY LOSSES

2.5mJ

2.0mJ

1.5mJ

1.0mJ

0.5mJ

0.0mJ
25C

20

Eoff

2.5mJ

E, SWITCHING ENERGY LOSSES

3.0mJ

50C

75C

1.5mJ

1.0mJ

0.5mJ

0.0mJ
600V

100C 125C 150C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical turn-off energy as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=25A, RG=10,
Dynamic test circuit in Figure E)

Power Semiconductors

2.0mJ

650V

700V

750V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical turn-off energy as a
function of collector emitter
voltage
(inductive load, TJ=175C,
VGE=0/15V, IC=20A, RG=10,
Dynamic test circuit in Figure E)

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series

Ciss
240V

1nF

960V

c, CAPACITANCE

VGE, GATE-EMITTER VOLTAGE

15V

10V

5V

0V

100pF

Coss

Crss
0nC

25nC

50nC

75nC

0V

QGE, GATE CHARGE

Figure 17. Typical gate charge
(IC=25 A)

ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

-1

0.2
0.1
0.05
R,(K/W)
0.0183
0.1313
0.1358
0.1257

0.02
-2

0.01

10 K/W

, (s)

-2

6.66*10
2.85*10-2
5.49*10-3
4.51*10-4

R1

R2

single pulse
C 1 = 1 /R 1

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)

D=0.5

10 K/W

10V

C 2 = 2 /R 2

D=0.5

-1

10 K/W

0.2
0.1
0.05
0.02

R,(K/W)
0.079
0.1708
0.1263
0.035

, (s)
7.66*10-2
1.24*10-2
8.56*10-4
7.52*10-5

R1

R2

0.01
C 1 = 1 /R 1

-2

C 2 = 2 /R 2

10 K/W
single pulse

-3

10 K/W

10s

100s

1ms

10ms

10s

100ms

tP, PULSE WIDTH

Figure 19. IGBT transient thermal
resistance
(D = tp / T)

Power Semiconductors

100s

1ms

10ms

100ms

tP, PULSE WIDTH

Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series

45A

IF=50A

2.0V

35A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

40A

30A
25A
TJ=25C

20A

175C

15A
10A

25A

1.5V

12.5A
1.0V

0.5V

5A
0A

0.0V

0.5V

1.0V

1.5V

0.0V

2.0V

VF, FORWARD VOLTAGE

Figure 21. Typical diode forward current as
a function of forward voltage

Power Semiconductors

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 22. Typical diode forward voltage
as a function of junction temperature

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series

PG-TO247-3-21

Power Semiconductors

10

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series
i,v
tr r =tS +tF

diF /dt

Qr r =QS +QF
IF

tS
QS

Ir r m

tr r

tF
10% Ir r m

QF

dir r /dt
90% Ir r m

t
VR

Figure C. Definition of diodes

switching characteristics
1

r1

r2

rn

Tj (t)
p(t)

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

Power Semiconductors

11

Rev. 2

Feb. 07

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IHW25N120R2
Soft Switching Series
Edition 2006-01
Published by
Infineon Technologies AG
81726 Mnchen, Germany
Infineon Technologies AG 2/14/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Power Semiconductors

12

Rev. 2

Feb. 07