TIC246

TIC246 SERIES
SILICON TRIACS
High Current Triacs
TO-220 PACKAGE
(TOP VIEW)
16 A RMS
Glass Passivated Wafer
MT1
400 V to 800 V Off-State Voltage
MT2
125 A Peak Current

Max IGT of 50 mA (Quadrants 1 - 3)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
This series is currently available,

but not recommended for new
designs.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC246D
TIC246M
Repetitive peak off-state voltage (see Note 1)
TIC246S
Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2)
TIC246N
Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3)
Peak gate current
Operating case temperature range

Storage temperature range
SYMBOL
400
600
VDRM
UNIT
V
700
800
IT(RMS)
16
ITSM
125
TC
-40 to +110
TL
230
IGM
Tstg
Lead temperature 1.6 mm from case for 10 seconds
VALUE
-40 to +125
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at
the rate of 400 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25C case temperature (unless otherwise noted )

PARAMETER
IDRM
IGT
VGT
VT
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
On-state voltage
TEST CONDITIONS
VD = rated VDRM
IG = 0
Vsupply = +12 V
RL = 10
Vsupply = -12 V
RL = 10
Vsupply = +12 V
Vsupply = -12 V
RL = 10
tp(g) > 20 s
Vsupply = -12 V
RL = 10
Vsupply = -12 V
ITM = 22.5 A
tp(g) > 20 s
tp(g) > 20 s
RL = 10
tp(g) > 20 s
tp(g) > 20 s
RL = 10
tp(g) > 20 s
RL = 10
tp(g) > 20 s
IG = 50mA
TYP
TC = 110C
RL = 10
Vsupply = +12 V
Vsupply = +12 V
MIN
tp(g) > 20 s
(see Note 4)
12
-19
-16
34
0.8
-0.8
-0.8
0.9
1.4
MAX
UNIT
mA
50
-50
-50
mA
-2
-2
2
1.7
V
V
All voltages are with respect to Main Terminal 1.

NOTE 4: This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.
TIC246 SERIES
SILICON TRIACS
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
IH
Holding current
IL
Latching current
di/dt
Init ITM = 100 mA
22
40
Vsupply = -12 V
IG = 0
Init ITM = -100 mA
-12
-40
Vsupply = +12 V
off-state voltage
dv/dt(c)
MAX
IG = 0
MIN
VD = Rated VD
UNIT
mA
80
(see Note 5)
Vsupply = -12 V
Critical rate of rise of
dv/dt
TYP
Vsupply = +12 V
mA
-80
IG = 0
TC = 110C
Critical rise of
VD = Rated VD
TC = 80C
commutation voltage
di/dt = 0.5 IT(RMS)/ms
IT = 1.4 IT(RMS)
Critical rate of rise of
VD = Rated VD
on -state current
diG/dt = 50 mA/s
IGT = 50 mA
1.2
TC = 110C
400
V/s
V/s
100
A/s
All voltages are with respect to Main Terminal 1.

NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
RJC
Junction to case thermal resistance
RJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1.9
C/W
62.5
C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT

vs
IGT - Gate Trigger Current - mA
100
10
01
-60
Vsupply IGTM
+
+
+
+
-40
-20
CASE TEMPERATURE
TC08AA
10
VGT - Gate Trigger Voltage - V
CASE TEMPERATURE
1000
GATE TRIGGER VOLTAGE

vs
VAA = 12 V
Vsupply IGTM
+
+
+
+
tp(g) = 20 s
20
40
60
80
100
VAA = 12 V
RL = 10
120
01
-60
-40
-20
RL = 10
tp(g) = 20 s
0
20
40
60
80
TC - Case Temperature - C
Figure 1.
Figure 2.

2
TC08AB
100
120


TIC246 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
LATCHING CURRENT
vs
CASE TEMPERATURE
TC08AE
1000
10
1
Vsupply
100
10
Vsupply IGTM
VAA = 12 V
IG = 0
+
01
-60
CASE TEMPERATURE
TC08AD
IL - Latching Current - mA
IH - Holding Current - mA
100
+
+
-
Initiating ITM = 100 mA

-40
-20
20
40
60
80
100
120
Figure 3.

1
-60
-40
+
+
VAA = 12 V
-20
20
40
60
80
100
120
Figure 4.



TIC246

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TIC246 SERIES

High Current Triacs

400 V to 800 V Off-State Voltage

125 A Peak Current

Pin 2 is in electrical contact with the mounting base.

This series is currently available,

Repetitive peak off-state voltage (see Note 1)

Peak gate current

Operating case temperature range

Lead temperature 1.6 mm from case for 10 seconds

electrical characteristics at 25C case temperature (unless otherwise noted )

All voltages are with respect to Main Terminal 1.

DECEMBER 1971 - REVISED SEPTEMBER 2002

Init ITM = 100 mA

Init ITM = -100 mA

Critical rate of rise of

di/dt = 0.5 IT(RMS)/ms

Critical rate of rise of

All voltages are with respect to Main Terminal 1.

Junction to case thermal resistance

Junction to free air thermal resistance

GATE TRIGGER CURRENT

IGT - Gate Trigger Current - mA

VGT - Gate Trigger Voltage - V

GATE TRIGGER VOLTAGE

DECEMBER 1971 - REVISED SEPTEMBER 2002

Initiating ITM = 100 mA

DECEMBER 1971 - REVISED SEPTEMBER 2002

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