DMP31D0U

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

BVDSS

Max RDS(ON)

-30V

1 @ VGS = -4.5V
1.5 @ VGS = -2.5V
2 @ VGS = -1.8V

Max ID
@ TA = 25C
-0.67A
-0.54A
-0.47A

Low Gate Threshold Voltage

Fast Switching Speed

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

Case: SOT23

Case Material: Molded Plastic, Green Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Weight: 0.009 grams (Approximate)

ideal for high efficiency power management applications.

Load Switch in Portable Electronics

SOT23

D
D

G
S

Gate Protection
Diode

Top View
Internal Schematic

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number
DMP31D0U-7
Notes:

Case
SOT23

Packaging
3,000/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

P3U

Date Code Key

Year
Code
Month
Code

2011
Y
Jan
1

~
~
Feb
2

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

2016
D
Mar
3

YM

Marking Information

2017
E
Apr
4

P3U = Product Type Marking Code

YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

2018
F
May
5

Jun
6

1 of 7
www.diodes.com

2019
G
Jul
7

2020
H
Aug
8

2021
I
Sep
9

2022
J
Oct
O

2023
K

Nov
N

Dec
D

April 2016
Diodes Incorporated

DMP31D0U

Maximum Ratings (@TA = +25C, unless otherwise specified.)

Characteristic
Drain-Source Voltage
Gate-Source Voltage
TA = +25C (Note 6)
TA = +85C (Note 6)
TA = +25C (Note 5)

Steady
State

Continuous Drain Current

Pulsed Drain Current (Note 7)

Symbol
VDSS
VGSS

Value
-30
8

Unit
V
V

ID

-0.67
-0.48
-0.53

IDM

2.5

Value
0.45
0.71
275
177
-55 to +150

Unit
W
W
C/W
C/W
C

Thermal Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic

Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)

Power Dissipation
Thermal Resistance, Junction to Ambient

PD
RJA

Operating and Storage Temperature Range

Notes:

TJ, TSTG

5. Device mounted on FR-4 PCB, with minimum recommended pad layout

6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

P(pk), PEAK TRANSIENT POWER (W)

100
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
TJ - TA = P*Rthja (t)

90
80
70
60
50
40
30
20
10
0
0.001

0.01
0.1
1
10
100
1,000
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation

R(t), TRANSIENT THERMAL RESISITANCE

1
r(t) @ D=0.5
r(t) @ D=0.9

r(t) @ D=0.3

0.1

r(t) @ D=0.7
r(t) @ D=0.1
r(t) @ D=0.05

r(t) @ D=0.01

0.01
r(t) @ D=0.01
RJA (t) = r(t)*RJA
RJA = 176C/W
Duty Cycle, D = t1/t2

r(t) @ D=0.005
r(t) @ D=Single Pulse

0.001
0.000001 0.00001

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

0.0001

0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 2 Transient Thermal Resistance
2 of 7
www.diodes.com

10

100

1,000

April 2016
Diodes Incorporated

DMP31D0U

Electrical Characteristics

(@TA = +25C, unless otherwise specified.)

Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Symbol

Min

Typ

Max

Unit

BVDSS
IDSS
IGSS

-30

-1
3

V
A
A

VGS = 0V, ID = -250A

VDS = -30V, VGS = 0V
VGS = 8V, VDS = 0V

VGS(TH)

-0.5

Static Drain-Source On-Resistance

RDS (ON)

|YFS|
VSD

50

-1.1
1
1.5
2

-1.2

mS
V

VDS = VGS, ID = -250A

VGS = -4.5V, ID = -400mA
VGS = -2.5V, ID = -200mA
VGS = -1.8V, ID = -100mA
VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA

CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF

76
9
6.43
167
0.9
1.5
0.1
0.2
5.0
5.9
35.7
16.7

150

pF
pF
pF

nC
nC
nC
nC
ns
ns
ns
ns

Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:

Test Condition

VDS = -15V, VGS = 0V,

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDS = -15V, ID = -1A
VGS = -8V, VDS = -15V,
ID = -1A

VDD = -10V, RL = 10
VGS = -4.5V, RG = 6

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Typical Electrical Characteristics

1.0

1.0

VGS = 4.5V

VGS = 1.8V

0.6

VDS = -5.0V

0.8
VGS = 2.5V

-ID, DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

0.8

VGS = 1.5V

0.4

VGS = 1.2V

0.6

0.4

TA = 150C

0.2

0.2

TA = 125C

TA = 85C
TA = 25 C
TA = -55C

0
0

0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristics

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

3 of 7
www.diodes.com

0.5
1.0
1.5
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristics

2.0

April 2016
Diodes Incorporated

RDS(ON),DRAIN-SOURCE ON-RESISTANCE ()

1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0

RDS(on), DRAIN-SOURCE ON-RESISTANCE ()

0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Gate Voltage

1.6

1.4
1.2
1.0
0.8
0.6
0.4
0.2
0

2
4
6
-VGS, GATE SOURCE VOLTAGE(V)
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage

1.7

1.4

VGS = -4.5V

1.2
1.0
T A = 150 C

0.8

T A = 125 C

0.6

TA = 85C
T A = 25C

0.4

T A = -55C

0.2
0

1.6

1.0

RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE()

0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature

1.5

1.3

1.1

0.9

0.7

0.5
-50

1.0

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 8 On-Resistance Variation with Temperature

1.6

1.4

VGS(TH), GATE THRESHOLD VOLTAGE(V)

RDS(ON),DRAIN-SOURCE ON-RESISTANCE ()

DMP31D0U

1.4
1.2
1.0
VGS = -2.5V
ID = -250mA

0.8
0.6
0.4

VGS = -4.5V
ID = -500mA

0.2
0
-50

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 9 On-Resistance Variation with Temperature

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

1.2
1.0
0.8
0.6
0.4
0.2
0
-50

-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature

4 of 7
www.diodes.com

April 2016
Diodes Incorporated

DMP31D0U
120

1.0
CT, JUNCTION CAPACITANCE (pF)

-IS, SOURCE CURRENT (A)

f = 1MHz

0.8

0.6

0.4

0.2

100

80
Ciss

60

40

20
Coss

0
0.4

0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current

100,000

Crss

5
10
15
20
25
-V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance

30

-V GS, GATE-SOURCE VOLTAGE (V)

-IDSS, LEAKAGE CURRENT (nA)

TA = 150C

10,000
TA = 125C

1,000

TA = 85C

100

10
TA = 25C

0.1

5
10
15
20
25
30
-V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

5 of 7
www.diodes.com

0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics

2.0

April 2016
Diodes Incorporated

DMP31D0U

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23

All 7

K1

GAUGE PLANE
0.25

a
M

L1

D
G

SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0
8

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23

Y1

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

Dimensions
C
X
X1
Y
Y1

Value (in mm)

2.0
0.8
1.35
0.9
2.9

X1

6 of 7
www.diodes.com

April 2016
Diodes Incorporated

DMP31D0U

IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2016, Diodes Incorporated
www.diodes.com

DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2

7 of 7
www.diodes.com

April 2016
Diodes Incorporated