BUP 200 D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1 Pin 2 Pin 3
G C E

Type VCE IC Package Ordering Code

BUP 200 D 1200V 3.6A TO-220 AB Q67040-A4420-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 3.6
TC = 90 °C 2.4
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 7.2
TC = 90 °C 4.8
Diode forward current IF
TC = 90 °C 8
Pulsed diode current, tp = 1 ms IFpuls
TC = 25 °C 48
Power dissipation Ptot W
TC = 25 °C 50
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150

Semiconductor Group 1 Dec-06-1995

 BUP 200 D

Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance
IGBT thermal resistance, chip case RthJC 3.1 K/W
Diode thermal resistance, chip case RthJCD 3.1

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.1 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 1.5 A, Tj = 25 °C - 2.8 3.3
VGE = 15 V, IC = 1.5 A, Tj = 125 °C - 3.8 4.3
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - - 0.275
Gate-emitter leakage current IGES nA
VGE = 20 V, VCE = 0 V - - 100

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 1.5 A - 0.6 -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 225 320
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 25 40
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 13 24

Semiconductor Group 2 Dec-06-1995

 BUP 200 D

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 1.5 A
RGon = 100 Ω - 30 50
Rise time tr nS
VCC = 600 V, VGE = 15 V, IC = 1.5 A
RGon = 100 Ω - 20 30
Turn-off delay time td(off) ns
VCC = 600 V, VGE = -15 V, IC = 1.5 A
RGoff = 100 Ω - 170 250
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 1.5 A
RGoff = 100 Ω - 15 25
Total turn-off loss energy Eoff mWs
VCC = 600 V, VGE = -15 V, IC = 1.5 A
RGoff = 100 Ω - 0.25 -
Free-Wheel Diode
Diode forward voltage VF V
IF = 4 A, VGE = 0 V, Tj = 25 °C - 2.3 3
IF = 4 A, VGE = 0 V, Tj = 125 °C - 1.9 -
Reverse recovery time trr ns
IF = 4 A, VR = -300 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - - -
Tj = 125 °C - 60 100
Reverse recovery charge Qrr µC
IF = 4 A, VR = -300 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - - -
Tj = 125 °C - 1 1.8

Semiconductor Group 3 Dec-06-1995

 BUP 200 D

Power dissipation Collector current

Ptot = ƒ(TC) IC = ƒ(TC)
parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C

55 3.6

W
A
45
Ptot IC
2.8
40
2.4
35

30 2.0

25 1.6

20
1.2
15
0.8
10

0.4
5
0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance IGBT

IC = ƒ(VCE) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T

10 1 t = 4.5µs 10 1
p

10 µs

A K/W
IC ZthJC
100 µs

10 0 10 0

1 ms

D = 0.50
0.20
10 ms
10 -1 10 -1 0.10
0.05
0.02
DC
single pulse 0.01

10 -2 10 -2
0 1 2 3 -5 -4 -3 -2 -1 0
10 10 10 10 V 10 10 10 10 10 s 10
VCE tp

Semiconductor Group 4 Dec-06-1995

 BUP 200 D

Typ. output characteristics Typ. transfer characteristics

IC = f(VCE) IC = f (VGE)
parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C

Typ. saturation characteristics Typ. saturation characteristics

VCE(sat) = f (VGE) VCE(sat) = f (VGE)
parameter: Tj = 25 °C parameter: Tj = 125 °C

Semiconductor Group 5 Dec-06-1995

 BUP 200 D

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 1 A parameter: VGE = 0 V, f = 1 MHz

20

VGE 16

14
400 V 800 V
12

10

0
0 4 8 12 16 20 24 32
Q Gate

Short circuit safe operating area Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH parameter: VGE = 15 V

10 2.5

ICsc /IC(90°C) I Cpuls/I C

6 1.5

4 1.0

2 0.5

0 0.0
0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600

Semiconductor Group 6 Dec-06-1995

 BUP 200 D

Forward characteristics of fast recovery Transient thermal impedance Diode

reverse diode IF = f (VF) Zth JC = ƒ(tp)
parameter: Tj parameter: D = tp / T

4.5 10 1

A
K/W
IF 3.5 ZthJC

3.0 10 0

2.5 Tj=125°C Tj=25°C

D = 0.50
2.0
0.20

1.5 10 -1 0.10
0.05
1.0 0.02
single pulse 0.01
0.5

0.0 10 -2
-5 -4 -3 -2 -1 0
0.0 0.5 1.0 1.5 2.0 V 3.0 10 10 10 10 10 s 10
VF tp

Semiconductor Group 7 Dec-06-1995

 BUP 200 D

Package Outlines
Dimensions in mm
Weight:

Semiconductor Group 8 Dec-06-1995

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