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d J/ 0K
d. 10.67 eV
14. The impurity commonly used for realizing the base region of silicon n-p-n
transistor is
a. Galium
b. Indium
c. Boron
d. Phosphorous
15. The resistivity of a uniformly doped n-type silicon sample is 0.5-cm. if the
electron mobility is 1250cm2 /v-s the donar impurity conc. Is
a. 2x1016 cm3 b. 1x1016 cm-3 c. 2.5x1016 cm-3 d. 2x1015 cm-3
16. The longest wavelength that can be absorbed by the silicon, which has band gap
of 1.2ev, is 1.1 micron. If the longest wavelength that can be absorbed by another
material is 0.87micron, then the band gap of this material is
a. 1.416 eV b. 10.888eV c. 0.854eV
d. 0.706 eV
17. A silicon sample A is doped with 108 atoms/cm3 of boron. Another sample of
identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of
electron to hole mobility is 3. The ratio of conductivity of the sample A to B is
a. 3
b. 3-1
c. 2/3
d. 3/2
18. The conc. Of minority carriers in extrinsic semiconductor under equilibrium is
a. Directly proportional to doping concentration
b. Inversely proportional to doping concentration
c. Directly proportional to the intrinsic concentration
d. Inversely proportional to the intrinsic concentration
19. Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
a. Diffusion Current
b. Drift Current
c. Recombination Current
d. Induced Current
20. In switching diode fabrication a do pant is introduced into silicon which
introduces additional trap levels in the material there by reducing the mean life
time of carriers. This do pant is
a. Al
b. Pt
c. Au
d. Cu
Answers:
1) d
2) d
3) c
4) a
5) d
6) b
7) d
8) c
9) d
10) c
11) c
12) b
13) b
14) c
15) b
16) a
17) b
18) b
19) a
20) c