Академический Документы
Профессиональный Документы
Культура Документы
Halogen-Free Product
Advanced Power
Electronics Corp.
D2
D2
D1
D1
S1
S2
G1
BVDSS
-60V
RDS(ON)
96m
ID
-3.4A
G2
Description
AP4951 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D2
D1
G2
G1
S2
S1
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
o
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25
ID@TA=70
Rating
Units
-60
+20
-3.4
-2.7
-20
IDM
PD@TA=25
0.016
W/
TSTG
-55 to 150
TJ
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Value
Unit
62.5
/W
1
201501125
AP4951GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-0.04
V/
VGS=-10V, ID=-3.4A
96
VGS=-4.5V, ID=-2.7A
120
BVDSS
BVDSS/Tj
RDS(ON)
VGS=0V, ID=-250uA
Max. Units
VGS(th)
VDS=VGS, ID=-250uA
-1
-3
gfs
Forward Transconductance
VDS=-10V, ID=-3.4A
3.4
IDSS
VDS=-60V, VGS=0V
-1
uA
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
+100
nA
Qg
ID=-3A
29.5
nC
Qgs
Gate-Source Charge
VDS=-48V
nC
Qgd
VGS=-10V
nC
td(on)
VDS=-30V
11
20
ns
tr
Rise Time
ID=-1A
10
ns
td(off)
RG=3.3,VGS=-10V
39
80
ns
tf
Fall Time
RD=30
10.5
20
ns
Ciss
Input Capacitance
VGS=0V
1320
pF
Coss
Output Capacitance
VDS=-25V
125
pF
Crss
f=1.0MHz
95
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-1.2
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
IS=-3A, VGS=0V,
39
80
ns
Qrr
dI/dt=100A/s
64
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
AP4951GM-HF
40
30
-10V
-7.0V
-5.0V
-4.5V
30
-10V
-7.0V
-5.0V
-4.5V
T A =150 o C
T A =25 o C
20
V G =-3.0V
20
V G =- 3 .0V
10
10
0
0
10
10
12
100
I D = -2.7A
T A =25
I D = -3.4A
V G = -10V
Normalized RDS(ON)
RDS(ON) (m )
1.6
90
80
1.2
0.8
0.4
70
2
-50
10
50
100
150
T j , Junction Temperature ( C)
10.00
1.6
8.00
-IS(A)
T j =25 o C
1.4
-VGS(th) (V)
T j =150
C
6.00
1.2
4.00
1
2.00
0.8
0.00
0.6
0.2
0.4
0.6
0.8
1.2
Reverse Diode
1.4
-50
50
100
150
T j , Junction Temperature ( C)
AP4951GM-HF
f=1.0MHz
12
10000
I D = -3A
V DS = -48V
C iss
1000
C (pF)
10
C oss
C rss
100
10
0
10
20
30
40
13
17
21
25
29
100
100us
1ms
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
10
-ID (A)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
0.001
0.1
10
100
0.0001
0.001
0.01
0.1
10
100
1000
20
V DS = -5V
o
T j =25 C
VG
T j =150 C
16
QG
-10V
12
QGS
QGD
Charge
AP4951GM-HF
MARKING INFORMATION
Part Number
4951GM
YWWSSS