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RoHS-compliant Product
Advanced Power
Electronics Corp.
D2
D2
D1
D1
BVDSS
-30V
RDS(ON)
53m
ID
-5A
G2
S2
SO-8
S1
G1
Description
D2
D1
G2
G1
S2
S1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25
ID@TA=70
Rating
Units
- 30
20
-5
-4
- 20
IDM
PD@TA=25
0.016
W/
TSTG
-55 to 150
TJ
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient 3
Max.
Value
Unit
62.5
/W
201009074-1/4
AP4953GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
-30
VGS=-10V, ID=-5A
53
VGS=-4.5V, ID=-4A
90
VDS=VGS, ID=-250uA
-1
-3
VGS=0V, ID=-250uA
2
Max. Units
VDS=-10V, ID=-5A
VDS=-30V, VGS=0V
-1
uA
VDS=-24V, VGS=0V
-25
uA
Gate-Source Leakage
VGS=20V
100
nA
ID=-5A
15
nC
IGSS
Min.
Qg
Qgs
Gate-Source Charge
VDS=-15V
1.7
nC
Qgd
VGS=-4.5V
4.5
nC
VDS=-15V
6.7
ns
td(on)
tr
Rise Time
ID=-1A
10
ns
td(off)
RG=3.3,VGS=-10V
21
ns
tf
Fall Time
RD=15
10
ns
Ciss
Input Capacitance
VGS=0V
595
952
pF
Coss
Output Capacitance
VDS=-25V
80
pF
Crss
f=1.0MHz
75
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-1.2
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
Max. Units
trr
IS=6A, VGS=0V,
18
ns
Qrr
dI/dt=100A/s
11
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.
AP4953GM
40
40
30
30
20
V G = -3.0V
10
20
V G = - 3.0 V
10
0
0
70
1.8
I D =-4A
T A =25
I D =-5A
V G =-10V
1.6
60
1.4
Normalized RDS(ON)
RDS(ON) (m)
-10V
-7.0V
-5.0V
-4.5V
T A =150 o C
-10V
-7.0V
-5.0V
-4.5V
T A =25 C
50
1.2
1.0
0.8
0.6
40
2
10
-50
50
100
150
T j , Junction Temperature ( o C)
8.00
1.6
1.4
-IS(A)
6.00
T j =150 C
T j =25 C
4.00
1.2
0.8
2.00
0.6
0.00
0.4
0
0.2
0.4
0.6
0.8
1.2
Reverse Diode
1.4
-50
50
100
150
T j , Junction Temperature ( o C)
AP4953GM
f=1.0MHz
14
1000
10
C (pF)
C iss
I D =-5A
V DS =-15V
12
100
C oss
C rss
10
0
12
16
20
13
17
21
25
29
100
10
100us
1ms
-ID (A)
10ms
100ms
1s
T A =25 o C
Single Pulse
0.1
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
DC
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
10
100
0.0001
0.001
0.01
0.1
10
100
1000
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
4/4
Millimeters
5
E1
SYMBOLS
MIN
NOM
MAX
1.35
1.55
1.75
A1
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
E1
3.80
3.90
4.00
5.80
6.15
6.50
0.38
0.71
1.27
4.00
8.00
1.27 TYP
A
A1
DETAIL A
c
DETAIL A
Part Number
4953GM
YWWSSS
Package Code