National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Islamabad Campus

Serial No:

EE-214 Electronics-I
SOLUTION

Sessional II
Total Time: 1 Hour
Total Marks: 50

Tuesday, November 5, 2013

Course Instructor
________________

Durdana Habib
Rashid Karim

Signature of Invigilator

______________________________ _________ ______ _____________________

Student Name

Roll No

Section

Signature

DO NOT OPEN THE QUESTION BOOK OR START UNTIL INSTRUCTED.

Instructions:
1. Attempt on question paper. Attempt all of them. Read the question carefully,
understand the question, and then attempt it.
2. No additional sheet will be provided for rough work. Use the back of the last page for
rough work.
3. If you need more space write on the back side of the paper and clearly mark question
and part number etc.
4. After asked to commence the exam, please verify that you have eleven (11) different
printed pages including this title page. There are total of 5 questions.
5. Calculator sharing is strictly prohibited.
6. Use permanent ink pens only. Any part done using soft pencil will not be marked and
cannot be claimed for rechecking.

Marks
Obtained
Total
Marks

Q-1

Q-2

Q-3

Q-4

Q-5

Total

10

14

12

10

50

Vetted By: _____________________________ Vetter Signature: _____________________

Page 1 of 13

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Islamabad Campus

Q1.
(a) Design the following circuit for voltage gain of 183 V/V. Use = 100, = 37 / and
emitter to collector voltage of 6.1 V. Draw output waveform of the circuit. [5+2=7]

A.

Replacing the transistor with its equivalent small signal model, we can write

and

So voltage gain will be =

We need to calculate and for . So

This implies = 0.92

= = (0.99)(36.8m) = 0.93 mA

= = 27.2

So, =

implies = 5

Now for , we need to draw circuit with DC source only.

From the circuit,
= Implies = 5.4 (Transistor is in active mode)

10

This gives = 10

Page 2 of 13

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Islamabad Campus

(b) Redesign the following DC biased circuit in such a way that it becomes suitable to be used as
an amplifier (Only from DC biased point of view). Here = 10.5 , = 50 and = 10.
You are allowed to change only in your redesign process. [3]

A.
As > (Transistor is in saturation mode).
We have to change of the transistor in such a way that makes transistor to operate in active
mode for amplifier use.

From the circuit, we can write

should be greater than 0.3 V for an active mode of operation. Let us take it 5 V.

= 5

= 0.1

= +
= 1.7
=

Page 3 of 13

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Islamabad Campus

Q2.
(a). For the following DC biased transistor designs, which one can be called as a good design
considering DC biasing point? Clearly state reason for your decision. [2]
Hint: Base current calculation may be helpful

(i)
(ii)
Stepwise analysis sequence for the both the circuit is given below by the circuit diagrams
:

For circuit (i), we note that circuit is highly dependent on , as and depends on . So small
variations in will change the circuit severely, even will change mode of operation of BJT. On
the other hand, second circuit is independent of as only base current depends on . depends
on . We know that large variations of will produce small variations in without having any
effect on BJT operating mode.

Page 4 of 13

National University of Computer and Emerging Sciences

School of Engineering
Fall 2013
Islamabad Campus
(b). How does device physics of the transistor justifies base width modulation effect? How
would you modify the NPN transistor large signal equivalent models in order to include base
width modulation effect? Draw the circuit diagram. [2]
A. Base width modulation effect or Early effect describes collector current dependency on
collector voltage. It states that collector current of the transistor increases with increase of of
the transistor in case of common emitter configuration. At a given value of , increasing
increases the reverse-bias voltage on the collectorbase junction, and thus increases the width
of the depletion region of this junction. This in turn results in a decrease in the effective base
width W. Recalling that is inversely proportional to W (Eq. 6.4 of the book), we see that will
increase and that increases proportionally. The large signal equivalent model including early
effect is given below (Only T models are given)

(c). Consider the circuit shown below. What happens to the transconductance of Q1 if the area of
the device is increased by a factor of n? [2]
A. Since , is multiplied by the same factor.
Thus, = exp ( / ) also rises by a factor of n because
is constant. As a result, the transconductance increases by a factor of n.
From another perspective, if n identical transistors, each carrying a
collector current of 0 , are placed in parallel, then the composite device
exhibits a transconductance equal to n times that of each (fig below).
On the other hand, if the total collector current remains unchanged,
then so does the transconductance.

Page 5 of 13

National University of Computer and Emerging Sciences

School of Engineering
Fall 2013
Islamabad Campus
(d). Draw the small-signal equivalent circuit for the amplifier shown below. [2]

A.

(e). A student familiar with bipolar devices constructs the circuit shown below and attempts to
amplify the signal produced by a microphone. If IS = 6 1016 A and the peak value of the
microphone signal is 20 mV, determine the peak value of the output signal. [2]

A. Unfortunately, the student has forgotten to bias the transistor. (The microphone does not
produce a dc output.) If (= ) reaches 20 mV, then

= exp ( ) = 1.29 1015

This change in the collector current yields a change in the output voltage equal to

= 1.29 1012
The circuit generates virtually no output because the bias current (in the absence of the
microphone signal) is zero and so is the transconductance.
Page 6 of 13

National University of Computer and Emerging Sciences

School of Engineering
Fall 2013
Islamabad Campus
(f) For an active mode NPN transistor, derive expression for the component of base current
created due to holes that have to be supplied by external circuitry in order to replace the hole
lost from the base through recombination process. [4]
A. For an NPN transistor in active region, profile of minority carrier concentrations is shown in
figure below. (EBJ =Forward biased, CBJ = Reverse Biased for active mode NPN)

Let 2 be required current

Substituting (0) = 0
Substituting 0

2
=
,

2 =

= ( 0 (0))

2 =

Page 7 of 13

2
2

2
2

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Page 8 of 13

Islamabad Campus

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Page 9 of 13

Islamabad Campus

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Page 10 of 13

Islamabad Campus

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Page 11 of 13

Islamabad Campus

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Page 12 of 13

Islamabad Campus

National University of Computer and Emerging Sciences

School of Engineering

Fall 2013

Page 13 of 13

Islamabad Campus