IDW100E60

Fast Switching Emitter Controlled Diode

Features:
600V Emitter Controlled technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175C junction operating temperature
Easy paralleling
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:
http://www.infineon.com
PG-TO247-3

Applications:
Welding
Motor drives

Type

VRRM

IF

VF,Tj=25C

Tj,max

Marking

Package

IDW100E60

600V

100A

1.65V

175C

D100E60

PG-TO247-3

Maximum Ratings
Parameter

Symbol

Repetitive peak reverse voltage

VRRM

Value
600

Unit
V

Continuous forward current

TC = 25C

IF

TC = 90C

150
104

96

TC = 100C
Surge non repetitive forward current
TC = 25C, tp = 10 ms, sine halfwave
Maximum repetitive forward current
TC = 25C, tp limited by tj,max, D = 0.5

IFSM

400

IFRM

300

Power dissipation
TC = 25C

Ptot

TC = 90C

375
212
198

TC = 100C
Operating junction temperature

Tj

-40+175

Storage temperature

Tstg

-55...+150

Soldering temperature
1.6mm (0.063 in.) from case for 10 s

TS

IFAG IPC TD VLS

260

Rev. 2.3 20.09.2013

IDW100E60
Thermal Resistance
Parameter

Symbol

Conditions

Max. Value

Unit

RthJC

0.40

K/W

RthJA

40

Characteristic
Thermal resistance,
junction case
Thermal resistance,
junction ambient

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Conditions

Value
min.

typ.

max.

600

T j =2 5 C

1.65

2.0

T j =1 7 5 C

1.65

Unit

Static Characteristic
Collector-emitter breakdown voltage

VRRM

IR=0.25mA

Diode forward voltage

VF

I F = 10 0 A

Reverse leakage current

IR

V R = 6 00 V
T j =2 5 C

40

T j =1 7 5 C

3300

Dynamic Electrical Characteristics

Diode reverse recovery time

trr

T j =2 5 C

120

ns

Diode reverse recovery charge

Qrr

V R = 4 00 V ,

3.6

Diode peak reverse recovery current

Irr

I F = 10 0 A,

49.5

Diode peak rate of fall of reverse

recovery current during t b

dI r r / d t

dI F / dt = 1 20 0 A/ s

750

A/s

Diode reverse recovery time

trr

T j =1 2 5 C

168

ns

Diode reverse recovery charge

Qrrm

V R = 4 00 V ,

5.8

Diode peak reverse recovery current

Irr

I F = 10 0 A,

61.6

Diode peak rate of fall of reverse

recovery current during t b

dI r r / d t

dI F / dt = 1 20 0 A/ s

705

A/s

Diode reverse recovery time

trr

T j =1 7 5 C

200

ns

Diode reverse recovery charge

Qrrm

V R = 4 00 V ,

7.8

Diode peak reverse recovery current

Irr

I F = 10 0 A,

67.0

Diode peak rate of fall of reverse

recovery current during t b

dI r r / d t

dI F / dt = 1 20 0 A/ s

650

A/s

IFAG IPC TD VLS

Rev. 2.3 20.09.2013

IDW100E60

150A

300W

120A

IF, FORWARD CURRENT

Ptot, POWER DISSIPATION

350W

250W
200W
150W
100W

90A

60A

30A
50W
0W
25C

50C

75C

100C

125C

0A
25C

150C

TC, CASE TEMPERATURE

Figure 1. Power dissipation as a function of
case temperature
(Tj 175C)

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

175C
200A

150A

100A

125C

TC, CASE TEMPERATURE

Figure 2. Diode forward current as a
function of case temperature
(Tj 175C)

TJ=25C

250A

75C

2.0V

IF=200A

1.5V

100A

50A
1.0V

0.5V
50A

0.0V
0C

0A
0V

1V

2V

VF, FORWARD VOLTAGE

Figure 3. Typical diode forward current as
a function of forward voltage

IFAG IPC TD VLS

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 4. Typical diode forward voltage as a
function of junction temperature

Rev. 2.3 20.09.2013

IDW100E60

8C

trr, REVERSE RECOVERY TIME

200ns

150ns

100ns

TJ=25C
50ns

0ns
500A/s

1000A/s

Qrr, REVERSE RECOVERY CHARGE

TJ=175C

6C
5C
4C

TJ=25C

3C
2C
1C
0C
500A/s

1500A/s

diF/dt, DIODE CURRENT SLOPE

Figure 5. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=100A,
Dynamic test circuit in Figure E)

TJ=175C

7C

1000A/s

1500A/s

diF/dt, DIODE CURRENT SLOPE

Figure 6. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 100A,
Dynamic test circuit in Figure E)

-1200A/s

TJ=175C

60A
50A

TJ=25C

40A
30A
20A
10A
0A
500A/s

1000A/s

1500A/s

diF/dt, DIODE CURRENT SLOPE

Figure 7. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 100A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

dirr/dt, DIODE PEAK RATE OF FALL

OF REVERSE RECOVERY CURRENT

Irr, REVERSE RECOVERY CURRENT

70A

-1000A/s

-800A/s

TJ=25C
-600A/s

-400A/s

-200A/s

TJ=175C

0A/s
500A/s

1000A/s

1500A/s

diF/dt, DIODE CURRENT SLOPE

Figure 8. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=100A,
Dynamic test circuit in Figure E)

Rev. 2.3 20.09.2013

ZthJC, TRANSIENT THERMAL IMPEDANCE

IDW100E60

D=0.5

-1

10 K/W

0.2
0.1
0.05
0.02
0.01

-2

R,(K/W)
0.03814
0.17186
0.09381
0.07453
0.02165

, (s)
0.3724
0.07367
6.877 E-3
4.143 E-4
4.145 E-5

R1

R2

10 K/W

C 1 = 1 /R 1 C 2 = 2 /R 2

single pulse

1s

10s 100s 1ms 10ms 100ms

1s

tP, PULSE WIDTH

Figure 9. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)

IFAG IPC TD VLS

Rev. 2.3 20.09.2013

IDW100E60

IFAG IPC TD VLS

Rev. 2.3 20.09.2013

IDW100E60

Published by
Infineon Technologies AG
81726 Munich, Germany
2013 Infineon Technologies AG
All Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS

Rev. 2.3 20.09.2013