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GrowthofMushroomlikeCarbonNanotubes
andNanodiamondDirectlyon
HydroxyapatiteviaMPECVD
ElShazlyM.Duraia*1,2,GaryW.Beall2,3
SuezCanalUniversity,FacultyofScience,PhysicsDepartment,IsmailiaEgypt.
TexasStateUniversitySanMarcos,DepartmentofChemistryandBiochemistry,601UniversityDr.,SanMarcos,
TX78666,USA
3PhysicsDepartment,FacultyofScience,KingAbdulazizUniversity,Jeddah21589,SaudiArabia
1
2
duraia_physics@yahoo.com
Abstract
Introduction
Despite of its excellent biocompatibility with soft
tissues, Hydroxyapatite (HA: Ca10(PO4)6(OH)2)
ceramics has low fracture strength, which made it
inappropriate for many applications and limited its
use mainly to conditions of low loadbearing
applications.Actually,thesedrawbacksoftheHAcan
be solved by using composites of metals and
hydroxyapatiteorcalciumphosphates(Wan2007).To
enhance the mechanical properties of the HA, many
attemptshavebeendone;suchasplasmasprayedHA
coatings on metallic implants that were extensively
used toimprove their biocompatibility (Christel1991).
CNTs with its exceptional physical and chemical
properties could be a good candidate to improve the
physical properties of the HA. In a previous work,
CNTs were used as filler to enhance the physical
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andsphericalnanodiamondhavebeengrowndirectly
onHAbyusingMPECVD.
Experimental
Commercialhydroxyapatite(SigmaAldrich)wasused
as a substrate. About 0.5g of HA has been pressed to
form disk of diameter 1cm. Two different methods
have been used for the growth of mushroomlike
CNTsandnanodiamond,respectively.Forthegrowth
of mushroomlike CNTs; thin film, about 5 nm, of
nickel catalyst was sputtered on the surface of the
substrates by using ion beam evaporation. SEKI
AX5200S MPECVD reactor was used for the growth,
andmoreinformationaboutthisreactorcanbefound
inthereferences[Duraia2010;Duraia2009].Theeffect
of the different MPECVD parameters such as the
growth temperature (within the range 500C 750C),
plasma power (400700) watt, gas pressure and flow
rate were studied. For the growth of the nano
diamond, the substrate was subjected to biased
voltage in order to create high nucleation density
(fromzeroto300V).
FIG.1XRDOFTHEHYDROXYAPATITEAFTERGROWTHOF
CNTS
Secondaryphaseformationcouldbepreventedbythe
water vapor that comes as a product of the
dehydroxylation and the thermal decomposition
during sintering. The presence of moisture in the
sintering atmosphere has slowed down the
decomposition rate by preventing the loss of the OH
group from the HA matrix. Mayer et al. (Mayer2008)
showed that the heat treatment of Mn doped HA at
800C for 5h is sufficient for partially or almost
completely HA to TCP transformation. In the
presentwork,theplasmaeffectisexpectedtoraisethe
temperature of the HAsubstrate surface exposed to
higher than 800C during the deposition time. No
conspicuous chemical reaction was recorded between
CNTandHAthroughthesparkplasmasintering(Xu
2009)whichisinaccordancewiththepresentfindings.
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FIG.2SEMIMAGESOFHABEFORECNTSGROWTH(A),CNTS
WHICHWEREGROWNDIRECTLYONTHEHAATDIFFERENT
MAGNIFICATIONS(BE)ANDEDXANALYSIS(F)
DiameterofthegrownCNTswasnotuniform.Itwas
noticed that the diameter is large at the bottom and
becomessmallattheendanditlookslikemushroom.
Catalyst nanoparticles are found at the top of the
CNTs, which indicated that the growth mechanism
wasviatipmechanism.Moreover;asitcanbenoticed
fromFig.2c,2dand3c,3dthattherearesomeneedle
likestructuresfoundtobefromHAasindicatedfrom
theEDSanalysis.IthasbeenknownthatHAcanform
nonequiaxial crystallites of possible rodlike and
ribbonlike morphology even under equilibrium
growthconditionsandidealstoichiometry(Silva2004).
These HA rodlike structures have been developed
during the thermal annealing before starting the
growthprocess.
FIG.3SEMIMAGESOFCNTONHAWITHOUTANNEALINGIN
VACUUMATDIFFERENTMAGNIFICATIONS
Thegrowthtemperaturewasfoundtobeanimportant
parameter in the growth of the CNTs on HA. When
thegrowthtemperaturedecreasedto500Casshown
in fig.3, theamount of the CNTs was very small. The
systemwasevacuatedto6x107torrandtheheaterwas
turnedonat500Candthepretreatmentwasdonefor
fiveminutesatplasmapower700watt;hydrogenflow
rate90sccmandthegrowthprocesswasdoneat500
watt for 10 min. An increase of the amount of the
CNTs and as well its quality was noticed, when the
growth temperature increases to 750 C. Thus, the
ratio IG/ID increased from 1.341 to 1.774 when the
growth temperature increased from 500 C to 750 C.
Simultaneously, the diameter of the CNTs also
increased. At high temperature, the small catalyst
particle can coalesce together to form bigger particle
whichwillproduceCNTswithlargerdiameterorthe
catalystparticlemaybeflatatthehighertemperature
so it can also produce CNTs with larger diameter
(Duraia2010).
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amountofCNTsincreasesandtheHApeakbecomes
weak as shown in Fig.4. HA peak in the Raman
spectrum of the lower temperature specimen has
completely disappeared while at higher temperature
the intensity of the peak at 968 cm1 is more
conspicuousandanothersmallpeakappearedat1083,
whichisattributedto1(PO4)and3(PO4),respectively.
FIG.4RAMANSPECTRAOFCNTSGROWNONHAAT
DIFFERENTGROWTHTEMPERATURES
FIG.5HRTEMOFCNTSANDNANODIAMOND
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FIG.6RAMANSPECTRUMFORTHENANODIAMOND
GROWNOVERHA.
JournalofMiningWorldExpressVolume2Issue3,July2013www.mwejournal.org
one.WatervaporthatcomesoutfromtheHAduring
the growth process may be responsible for the good
quality of the CNTs. Raman study of the nano
diamond showed that there is slightly wide peak
centered at 1327 which is shifted 5 cm1 from first
order peak for the bulk diamond due to the phonon
confinement. Direct synthesis of CNTs and nano
diamond on HA has vast applications in bio
implementation.
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