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DATA SHEET

MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION

These products are N-channel MOS Field Effect

Transistor designed for high current switching

applications.

ORDERING INFORMATION

PART NUMBER

PACKAGE

NP32N055HLE

TO-251

NP32N055ILE

TO-252

FEATURES

Channel temperature 175 degree rated

Super low on-state resistance

RDS(on)1 = 24 mMAX. (VGS = 10 V, ID = 16 A)

RDS(on)2 = 29 mMAX. (VGS = 5.0 V, ID = 16 A)

Low Ciss : Ciss = 1300 pF TYP.

Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

55

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID(DC)

±32

A

Drain Current (Pulse) Note1

ID(pulse)

±100

A

Total Power Dissipation (TA = 25°C)

PT

1.2

W

Total Power Dissipation (TC = 25°C)

PT

66

W

Single Avalanche Current Note2

IAS

28 / 21 / 8

A

Single Avalanche Energy Note2

EAS

7.8 / 44 / 64

mJ

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

–55 to +175

°C

(TO-251)

Temperature T stg –55 to +175 °C (TO-251) (TO-252) Notes 1. PW ≤ 10 µ s

(TO-252)

T stg –55 to +175 °C (TO-251) (TO-252) Notes 1. PW ≤ 10 µ s ,

Notes 1. PW 10 µs, Duty cycle 1 % 2. Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

2.27

°C/W

Channel to Ambient

Rth(ch-A)

125

°C/W

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. Date Published Printed in Japan

D14137EJ3V0DS00 (3rd edition) March 2001 NS CP(K)

The mark shows major revised points.

©

Printed in Japan D14137EJ3V0DS00 (3rd edition) March 2001 NS CP(K) The mark ★ shows major revised

1999

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain to Source On-state Resistance

RDS(on)1

VGS = 10 V, ID = 16 A

 

19

24

m

RDS(on)2

VGS = 5.0 V, ID = 16 A

 

22

29

m

RDS(on)3

VGS = 4.5 V, ID = 16 A

 

24

33

m

Gate to Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.5

2

2.5

V

Forward Transfer Admittance

 

| yfs |VDS = 10 V, ID = 16 A

8

16

 

S

Drain Leakage Current

IDSS

VDS = 55 V, VGS = 0 V

   

10

µA

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

   

±10

µA

Input Capacitance

Ciss

VDS = 25 V, VGS = 0 V, f = 1 MHz

 

1300

2000

pF

Output Capacitance

Coss

 

180

270

pF

Reverse Transfer Capacitance

Crss

 

90

160

pF

Turn-on Delay Time

td(on)

ID = 16 A, VGS(on) = 10 V, VDD = 28 V,

 

14

31

ns

Rise Time

tr

RG = 1

 

8

20

ns

Turn-off Delay Time

td(off)

 

40

81

ns

Fall Time

tf

 

7.4

19

ns

Total Gate Charge

QG1

ID = 32 A, VDD = 44 V, VGS = 10 V

 

27

41

nC

QG2

ID = 32 A, VDD = 44 V, VGS = 5.0 V

 

15

23

nC

Gate to Source Charge

QGS

 

5

 

nC

Gate to Drain Charge

QGD

 

9

 

nC

Body Diode Forward Voltage

VF(S-D)

IF = 32 A, VGS = 0 V

 

1.0

 

V

Reverse Recovery Time

trr

IF = 32 A, VGS = 0 V, di/dt = 100 A/µs

 

41

 

ns

Reverse Recovery Charge

Qrr

 

58

 

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

PG. VGS = 20 0 V

D.U.T. D.U.T. L RG = 25 Ω RL RG 50 Ω PG. VDD VDD VGS
D.U.T.
D.U.T.
L
RG = 25 Ω
RL
RG
50 Ω
PG.
VDD
VDD
VGS
BVDSS
0
IAS
ID
VDS
τ
VDD
τ = 1 µs
Duty Cycle ≤ 1 %
Starting Tch
VGS 90 % VGS VGS(on) Wave Form 10 % 0 VDS 90 % 90 %
VGS
90 %
VGS
VGS(on)
Wave Form
10 %
0
VDS
90 %
90 %
VDS
10 %
10 %
VDS
0
Wave Form
td(on)
tr
td(off)
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA RL PG. 50 Ω VDD
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD

2

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

TYPICAL CHARACTERISTICS (TA = 25 °C)

Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
100
80
60
40
20
0 0
25
50
75
100
125
150
175
200
dT - Percentage of Rated Power - %

TC - Case Temperature - ˚C

Figure3. FORWARD BIAS SAFE OPERATING AREA

PW = 10 µs 100 µs 1000 1 ms DC I D(pulse) 100 Power ID(DC)
PW = 10 µs
100 µs
1000
1 ms
DC
I
D(pulse)
100
Power
ID(DC)
Limited Dissipation
10
1
TC = 25˚C
Single Pulse
0.1
0.1 1
10
100
VGS Limited
RDS(on)
= 10 V)
(at
ID - Drain Current - A

VDS - Drain to Source Voltage - V

Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

70 60 50 40 30 20 10 0 0 25 50 75 100 125 150
70
60
50
40
30
20
10
0 0
25
50
75
100
125
150
175
200
PT - Total Power Dissipation - W

TC - Case Temperature - ˚C

Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR

70 64 mJ 60 50 44 mJ IAS = 8 A 40 21 A 28
70
64
mJ
60
50
44
mJ
IAS =
8 A
40
21
A
28
A
30
20
7.8 mJ
10
0
25 50
75
100
125
150
175
Single Pulse Avalanche Energy - mJ

Starting Tch - Starting Channel Temperature - ˚C

Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C)
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 125 ˚C/W
100
10
Rth(ch-C) = 2.27 ˚C/W
1
0.1
Single Pulse
TC = 25˚C
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
rth(t) - Transient Thermal Resistance - ˚C/W

Data Sheet D14137EJ3V0DS

3

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

4

Figure6. FORWARD TRANSFER CHARACTERISTICS

100 Pulsed 10 TA = −55˚C 25˚C 75˚C 150˚C 1 175˚C 0.1 VDS = 10
100
Pulsed
10
TA = −55˚C
25˚C
75˚C
150˚C
1
175˚C
0.1
VDS = 10 V
0.01
1.0
2.0
3.0
4.0
5.0
6.0
ID - Drain Current - A

VGS - Gate to Source Voltage - V

Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

100 Pulsed VDS = 10 V 10 TA = 175˚C 75˚C 1 25˚C −55˚C 0.1
100
Pulsed
VDS = 10 V
10
TA = 175˚C
75˚C
1
25˚C
−55˚C
0.1
0.01
| yfs | - Forward Transfer Admittance - S
0.01 0.1 1 10 100 ID - Drain Current - A Figure10. DRAIN TO SOURCE
0.01
0.1
1
10
100
ID -
Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
VGS =
10 V
40
5.0
V
4.5
V
30
20
10
0
0.1
1
10
100
ID -
Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ

Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

120 Pulsed 100 VGS =10 V 80 60 5.0 V 40 4.5 V 20 0
120
Pulsed
100
VGS =10 V
80
60
5.0 V
40
4.5 V
20
0 0
1234
5678
ID - Drain Current - A

VDS - Drain to Source Voltage - V

Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 30 ID
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
ID = 16 A
20
10
0 0
2
4
6
8
10
12
14
16
18
20
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = VGS ID =
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250
µ
A
2.0
1.0
0
−50
0
50
100
150
VGS(th) - Gate to Source Threshold Voltage - V

Tch - Channel Temperature - ˚C

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 50 VGS = 4.5 V
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
VGS = 4.5 V
40
5.0 V
10 V
30
20
10
ID
= 16 A
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - mΩ

Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000 VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 C rss
10000
VGS = 0 V
f
= 1 MHz
Ciss
1000
Coss
100
C
rss
10
0.1 1
10
100
Ciss, Coss, Crss - Capacitance - pF

VDS - Drain to Source Voltage - V

Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT

1000 di/dt = 100 A/µs VGS = 0 V 100 10 1 0.1 1.0 10
1000
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0
10
100
IF - Drain Current
- A
trr - Reverse Recovery Time - ns

Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000 Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 0.1 0
1000
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5
1.0
1.5
ISD - Diode Forward Current - A

VSD -

Source to Drain Voltage - V

Figure15. SWITCHING CHARACTERISTICS

1000 tf 100 td(off) td(on) 10 tr 1 0.1 1 10 100 td(on), tr, td(off),
1000
tf
100
td(off)
td(on)
10
tr
1
0.1
1
10
100
td(on), tr, td(off), tf - Switching Time - ns

ID - Drain Current - A

Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80 16 14 60 12 VGS VDD = 44 V 10 28 V 11 V
80
16
14
60
12
VGS
VDD = 44 V
10
28
V
11
V
40
8
6
20
4
VDS
2
ID = 32 A
0
0 4
8
12
16
20
24
28
32
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V

QG - Gate Charge - nC

Data Sheet D14137EJ3V0DS

5

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

6.5±0.2 2.3±0.2 5.0±0.2 0.5±0.1 4 1 2 3 1.3 MAX. 0.6±0.1 0.6±0.1 2.3 2.3 1.Gate
6.5±0.2
2.3±0.2
5.0±0.2
0.5±0.1
4
1
2
3
1.3 MAX.
0.6±0.1
0.6±0.1
2.3
2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.6±0.2
+0.2
0.75
5.5±0.27.0
MAX.
1.5-0.1
13.7 MIN.

EQUIVALENT CIRCUIT

Drain Body Gate Diode Gate Protection Source
Drain
Body
Gate
Diode
Gate
Protection
Source

Diode

2) TO-252 (MP-3Z)

6.5±0.2 2.3±0.2 5.0±0.2 0.5±0.1 4 123 0.9 0.8 1.3 MAX. MAX. MAX. 2.3 2.3 0.8
6.5±0.2
2.3±0.2
5.0±0.2
0.5±0.1
4
123
0.9
0.8
1.3 MAX.
MAX.
MAX.
2.3
2.3
0.8
1.
Gate
2.
Drain
4.3 MAX.0.8
2.0 10.0
MIN.
5.5±0.2
+0.2
1.5-0.1
MAX.
1.0 MIN.
1.5TYP.
0.5

3. Source

4. Fin (Drain)

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

6

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

[MEMO]

Data Sheet D14137EJ3V0DS

7

NP32N055HLE, NP32N055ILE

NP32N055HLE, NP32N055ILE

The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

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M8E 00. 4