2SJ526

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-579B (Z)
4th. Edition
Jun 1998
Features
Low on-resistance
R DS(on) = 0.11 typ.
Low drive current
4 V gete drive devices
High speed switching

Outline
TO220FM

1 2
S

1. Gate
2. Drain
3. Source
3

2SJ526
Absolute Maximum Ratings (Ta = 25C)
Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

Gate to source voltage

VGSS

20

Drain current

ID

12

48

12

12

12

mJ

25

Drain peak current

I D(pulse)

Body-drain diode reverse drain current

I DR

Avalenche current

I AP

Avalenche energy

Note1

Note3

EAR

Note3
Note2

Channel dissipation

Pch

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

Note:

1. PW 10s, duty cycle 1 %

2. Value at Tc = 25C
3. Value at Tch = 25C, Rg 50

Electrical Characteristics (Ta = 25C)

Item

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage V(BR)DSS

60

I D = 10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS

20

I G = 100A, VDS = 0

Zero gate voltege drain current

I DSS

10

VDS = 60 V, VGS = 0

Gate to source leak current

I GSS

10

VGS = 16V, VDS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.0

I D = 1mA, VDS = 10V

Static drain to source on state

RDS(on)

0.11

0.15

I D = 6A, VGS = 10V Note4

resistance

RDS(on)

0.16

0.23

I D = 6A, VGS = 4V Note4

Forward transfer admittance

|yfs|

I D = 6A, VDS = 10V

Input capacitance

Ciss

580

pF

VDS = 10V

Output capacitance

Coss

300

pF

VGS = 0

Reverse transfer capacitance

Crss

85

pF

f = 1MHz

Turn-on delay time

t d(on)

10

ns

VGS = 10V, ID = 6A

Rise time

tr

55

ns

RL = 6

Turn-off delay time

t d(off)

85

ns

Fall time

tf

60

ns

Bodydrain diode forward voltage VDF

1.2

I F = 12A, VGS = 0

Bodydrain diode reverse

recovery time

60

ns

I F = 12A, VGS = 0
diF/ dt = 50A/s

Note:

Symbol

4. Pulse test

t rr

Note4

2SJ526
Main Characteristics
Power vs. Temperature Derating

1000

Maximum Safe Operation Area

300

I D (A)

Pch (W)

40

30

100

10 s

Drain Current

Channel Dissipation

30

20

10

10

0.1

50

100

Case Temperature

150

200

Tc (C)

=
(1 10 m
Op sh s
er ot)
at
ion

Operation in
this area is
limited by R DS(on)
Ta = 25 C

Typical Transfer Characteristics

10 V
5 V

3.5 V

4 V
Pulse Test
3 V

2.5 V

I D (A)

10

Drain Current

I D (A)
Drain Current

DC

0.1 0.3 1
3
10 30 100
Drain to Source Voltage V DS (V)

Typical Output Characteristics

10

PW

0.3

10

V DS = 10 V
Pulse Test

Tc = 75 C

25 C

25 C

VGS = 2 V
0

2
4
6
Drain to Source Voltage

8
10
V DS (V)

1
2
3
Gate to Source Voltage

4
5
V GS (V)

2SJ526

Drain to Source Saturation Voltage

V DS(on) (V)

1.0

Pulse Test

0.8
I D = 5 A

0.6

0.4

Drain to Source On State Resistance

R DS(on) ( )

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current
1
0.5
VGS = 4 V

0.2
0.1

10 V

0.05

2 A
0.2

1 A

0.02
Pulse Test

0.01

4
8
12
Gate to Source Voltage

16
20
V GS (V)

Static Drain to Source on State Resistance

vs. Temperature
0.5
Pulse Test
0.4

0.3

0.2

I D = 5 A 2 A
V GS = 4 V

1 A
5 A
1, 2 A

0.1
10 V
0
40

0
40
80
120
160
Case Temperature Tc (C)

0.1

0.3

Drain Current

10

30

100

I D (A)

Forward Transfer Admittance vs.

Drain Current

Forward Transfer Admittance |y fs | (S)

Static Drain to Source on State Resistance

R DS(on) ( )

20
10
Ta = 25 C
5
25 C
2
75 C
1
0.5
0.1
0.1 0.2

V DS = 10 V
Pulse Test
0.5 1
2
5
Drain Current I D (A)

10

2SJ526
BodyDrain Diode Reverse
Recovery Time

2000

200
100
50

20

Ciss
500
200
100
50
20

di / dt = 50 A / s
VGS = 0, Ta = 25 C

10
0

40
V GS

60

80
100
0

8
V DS

12
V DD = 50 V
25 V
10 V

32
8
16
24
Gate Charge Qg (nc)

30

40

50

16
20
40

1000

Switching Time t (ns)

20

I D = 10 A

V GS (V)

V DD = 10 V
25 V
50 V

20

Switching Characteristics
0

Gate to Source Voltage

10

Drain to Source Voltage V DS (V)

Dynamic Input Characteristics

V DS (V)

Crss

Coss
10

5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I DR (A)

Drain to Source Voltage

VGS = 0
f = 1 MHz

1000
Capacitance C (pF)

Reverse Recovery Time trr (ns)

500

Typical Capacitance vs.

Drain to Source Voltage

300

V GS = 10 V, V DD = 30 V
Pw = 5 s, duty < 1 %
t d(off)

100
30

tf
tr
t d(on)

10
3
1
0.1 0.2

0.5 1 2
5
Drain Current I D (A)

10

2SJ526
Maximum Avalanche Energy vs.
Channel Temperature Derating

Reverse Drain Current vs.

Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)

Reverse Drain Current I DR (A)

10

6
10 V
V GS = 0, 5 V

5 V

2
Pulse Test
0

0.4

0.8

1.2

Source to Drain Voltage

1.6

2.0

20
I AP = 12 A
V DD = 25 V
duty < 0.1 %
Rg > 50

16

12

4
0
25

V SD (V)

50
75
100
125
150
Channel Temperature Tch (C)

Avalanche Test Circuit

V DS
Monitor

Avalanche Waveform
EAR =

1
2
L I AP
2

I AP
Monitor

VDSS
VDSS V DD

V (BR)DSS
I AP

Rg

D. U. T

V DS

VDD
ID

Vin
15 V

50
0

VDD

2SJ526
Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance

s (t)

3
Tc = 25C
1

D=1
0.5

0.3
0.2

0.1

ch c(t) = s (t) ch c
ch c = 5.0C/W, Tc = 25C

0.1
0.05

PDM

0.02
1
0.0

0.03

D=

PW

uls

p
ot

0.01
10

1s

PW
T

100

1m

100 m

10 m
Pulse Width

Switching Time Test Circuit

Vout
Monitor

Vin Monitor

10

PW (S)

Waveform
Vin
10%

D.U.T.
RL

90%
Vin
10 V 50

V DD
= 30 V

90%

90%
Vout
td(on)

10%
tr

10%
td(off)

tf

2SJ526
Package Dimensions
Unit: mm

2.8 0.2
2.5 0.2

10.0 0.3
7.0 0.3

2.54 0.5

2.54 0.5

2.7

14.0 1.0

0.7 0.1

4.45 0.3
2.0 0.3
5.0 0.3

1.2 0.2
1.4 0.2

17.0 0.3

12.0 0.3

0.6

3.2 0.2

0.5 0.1
Hitachi Code TO220FM
SC72
EIAJ

JEDEC

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