Deep-Submicron CMOS ICsDeep-Submicron CMOS ICs From Basies to ASICs Harry Veendrick a tenbidgenstam Deep Sabian CMOS Ce Ratan sci Prt hse rpm Pepa Pa Senses ogee, 186 Sond gn et 20 etree etree SSbecremneecamctaranon Se aoaiee omen =< ‘Re cu le a ime pati pay ea ‘Sui ope ed me sne,Foreword Dipl ail cn ol dig ‘rede compecy 00 «ag chip AL th me te ce and ‘Si perp wl afi he ern aly ade iy coop ties COS cna rece {iS emi am wok roting 2 he deeb ‘dng, tare caper cp ah, atte! propery ‘ory ut prs vagina, Thee some seta ‘Elettt CMOSmotans wgHetre cpr pombe pc “Thr om ton evi compe epee bt compete sim vo tal pce of MOS AST gh. Sang tba {EM08 ds and chs ete ad sym, kas he Si tern caf peti etn, ow tome sgl ney spf oe lings her “net pak tad re row a ath alesis, neha how {Sima ccklew protien a pap tone op, oti sed detuesing of Sepaanren cape Ply tin bor sar “Pl tek te St sone myn ak da coe sepa of ang el neti yen on dogo ao, ieitSrtetim i suhrsoeesarchn dona td a ‘foe pa oper racine ahing of CMOS eto Prov tot snd pongo obo aa Tony amend {rt oer ved nth da tet sn toe of SS syecoonnon a wll eageng etree hat ct winded tbat a cnr en on wen, Some 200) igo De Man, Pre KU. Lawes, Scie Rare Pi IMEC, Baan Preface to First and Second Edition An otogatd cei (10) pln of maemo nario whe ‘haber of exten eampoamt ar tered. The tao fect i! eomponeta ingles pce faton. The min. ‘ctr sine sly eon bat berate nce alm a eae oti inant moderate produ. The rt 1 a trot by ck Kilby In 190 Phot oth devin ad ef ‘entra shorn ae 3 Fig tate the atest pope EC compen. Th Sure sows the nr of xapenente a ‘roend Ce od he yar woh the Cs wnt pete. Tie "intupingn comply erry te jar ma pd by Ms ihe (INTE 19), ich ol ald igus 4107 itt ection fn 1 tly. Figured sows rte BOT tanto “The ditt Ser shows i are 3 ‘Server oth antes wee Dg Avi ren ing (DAB) ci cigar onan more ans allon airs Pre 7 tows ie milion asst Comper Programe age Device (PLD) gues thet in IC manufac tcp rn 1989 {oN About Sof aI ae tw tne in OS pee ‘Thse poco late the ston of weal tun 9 alin of ‘emponins ona chip wna Ty re rhe mastte ‘menor so eae VIST (Vey Large Sel nero) i. ge nie magne of thea sinterigus Growth th bar of ony p12 i iB gu 2 Tey rn 18 0 209 (aC) “This oak pov ing ntl apt acne with CMOS {ce The pies preted nce ran enasental pti slog, ig so implemetaton sees ae alo explain p- ‘rbd wl cuent and expand doves sho ree on trai tet. "Phe emt ofthis bok ae ted on the CMOS stn of a ‘adit couse eid “As inredctin fo 1C Continous rerio sd expan of the cote matarial nea ‘Si book hy eematt th TC Indy. ‘The lela he dar mins mk this book sieble iredaton rds te st, CAD serps, tt eng, ray einer era ‘Semel penal aod IC pans The txt abo mtb fr Sc grater and sderrsaaes yd ngeing cour ‘Gotidrbl efr Beon mc o ean th oho hia ook sed nl stl fee ae ince The Ire ur of ‘dam and pagan shold ee th explain. sgn ‘Sapam ral reat ig‘ rele the et tat toe tan 95% af al madara CMOS 1G are gta cee Howere, {he materi petted wil alo provide the angie dst with « ne undetding Up attr an pean of ‘bern CMOS cei, The caper are summa bse ‘Ghar sentsne deta ton of the bre ple and ‘uot py ofthe MOS transite. ‘The ermine ‘rng san fx MOS dl ant expintin of het Shara rte th reaontip betwen oes artes he cmmoar oon fase dimension edo nse ‘elton btwn the partamanes pdt by te sinple MOS tx ‘ls nd ein tasor behaviour The tof ampertre and {omy on ths beara re eapnined ncaper 2 Tn ion to fh indoor on teasir hd cre prin, tells cae ‘le vece dve iinet ready “The aio eco the mature f CMOS 14 ae sine in per 3 An explanation othe tpt cated oatgrapi a recente prove. Tl rec i> i fan vend depen teeny fr the mane Wt moden VS ent "To din of COS cet ted in caper «A nto. ‘on tthe peromance pects of eS eats prov an exten‘etl ceed fr ht xl of he CMOS dng "MOS chs and ni deri ae do ei te pe cll devin in haps 8. Cage vis (CCD od ‘Mos por tremors aang the spe vo Cag 8 “ite pret he amelie BLES ie cee eprom alent Dt af he IC sie ‘usable oto re Th mary of oe ‘aeunry perdi amined inher 6 The base ra {Soo ce he gating pp othe a pera pd Side gs es i apt pri ‘enous nC chy nw tanh itp of a pte pean, wih Sls er en fi fra ere rb 1 gn rien we ike enn sid CAB ev anil aos Sern thule ar wel ole «spurte cae of VLSE 1, STE ae spel hy apart the mana Ths Toten 16 AS1) ae enei th gr a w, Met eae i stn ho th cabo rae hy capac pags ba SER ach" a OS digas sth tn pom ‘SEba. Ghape'¢ poets oops eine rpor’ pias {Be CMO8 eng, mw a there vs ein a Tirvud VS dn comp, coined wt ihe fas ce create «Me weit peels Ths ects have ‘tte smote ign egy Spit {hIOS 1x Cater roo ects he ei oreo taunt mais bath ray signaling ara a ely oting. dbs td pacing impeach connote itso Ce pov oer ‘Tie natettinart tc hat spp tng, eka ihe am a nl ter Si omar aa porate ges aah tatu ed Be seat Gta elt o 1 potion at ab xa Ine galt and eat. ‘The connate of ratator dino amoclt with use proses goatin® the et oth fl ehaper hap {er} ‘Ths scl bs wr commen etn eho ‘Si 1 perfrmanee The ren rene pclae td he Atsohiedeflce on relay an sgl nary ae the ma ets eon. The xpried conan of ft natarton e ‘lee. This pois gto the alleges acing the IC ‘Not all ata i this ook icmpetely spat fom my id A ot of bk appease to ma te preted tral Hate ‘bear. Coeabe thse ade oma heres at empl and cnr | apolar pasion, Acknowledgements ht expr mya oll hee who ctu 0 the = ‘nti inch ia crn, leat ta manip Trl peril otha Dick Klason reviewing caper 2 sd Ant Mtr, Pave Wore, Ra Woe, ob Vera fr he eve af ly top, ad Cape aera fr te Heap {opie in per ako wiht sine ask Mich de Lae fo ‘Mob and rave af th acon on paging an Stead {evan Mererg rth ei othe VEST apt, Rage Capen [Kor ran der Sande ad Rol Sater rh reve Us ery ‘par Pau Smo the yl sen ed Eun Manes Wout othe tet pn. An Tt to thnk Ed ag fee of th nal hago wala amet Lt tat, {se eto thn Hara Ptr fo dein tn CMOS lots sa ‘ese Saber fe revising mi ith Denil, al colo ptor "an sey el to al tha wh tena the sue, Bene ‘he ea lato asec theron al ensue ‘cit coveted othe any ad empntee t bke Ts ato, want otha Pip eer fr the ception 1 wu fide, Hy Alles om Sle fr he crowing marl ‘st conta he alah tet rpc andthe Cen fo“Tangy Teining (CTT or opting hie wk Fil 1 wih ohh Dera don Elbow! fr he conaetoae citing td pesating wrk, Hielors oem high quay onl Teor sont hem a ton il wee hed with prt tothe previo Lat oad es ‘hci de od rota ha pels i te te Fg 3 Th dt fe in ek ‘en bdo wmindacr tcl an spe o as pt Te nares ania° ” (oles. PirOverview of symbols (Coe tae indepen teste eapcane & Dy" dct ety wy dts er (partie) D)resletage canal eg depen tarPOEpaerse seep ? apspesen, no SePppeerre cy ‘ct coma Sot ere aie perma re ie permet "ehtie pron f lion ‘hte sent ‘endo ad ery ee ‘nae ee ‘se ors ee ed strength “ale but nergy el ntl ect eld reg ‘alberta el ent ‘tal cei Bld rege Siete pot Fem patna ‘ut potential betwen uc and eae lok teen ‘aroma dock quency {eto whi xpress atop tone daca ‘it ag ae ‘berate ured ‘Stes! raion dnscarocnen ‘bie drains cae ‘independent cuest eon dest ‘ota rntnt ‘curettage ad held wage oe PETS BET PERO plication for ‘eet a te ‘ie rit case ath and adc ‘ete canoe! ong of eee ete {Pa woe porate ‘ttre cari aty (Sanwl hole may Sabatate doping contain ae pee ‘hg ety pm dnote “pmumie poe dipton ‘ae power dination totes sing cr oe ‘emeeary charg of eg doctroe ‘Epon ae charge ‘nur chuee {eal ie dng oth everson ee ble charge per ui ea ne case {ial rn the emis resance, Tied retinas nit rstenceo chan rsaace ok peo tine ‘oder teec te ‘ence vty ‘ese mtr way ose ka tage ‘nd ota ‘ote ae tag inne wns ‘ona arn Sc ence Err stage ones yolag of arden fatead ae a wont wes (piowone voy Ts amor tect age ph ng inp wage Jenn gs Non age ‘lo ph hough ge ‘stein (tn ba) wage Poca ge ‘Sitenre sage ial lta ‘tpl car el lags ‘shanocoet emir teak ea ‘Satu el ag 23108 waar rl ge {0S tse thal tgs Fe tensor eed tage ‘Sept stage sm a pon = Pocmeipedt hl tgs om Ya Ye Wer ip (Bp rodent aol wag ao dai Pree deer thet ogee dee tear ‘MOS trie haa wh eens cael with trnite pet aio HOS mir spect aio MOS traitor pec atoList of physical constantsContents Pretice st of phys constant 1 Base Princpes 12 Teepe pence 13) The ner ager MOS easier 151" The Met Osi Semen (MO) cpio 132. The mee ae MOS trenton 14 "Deseo sine MOS freoe 15 The tachi ob (bck gt Roy ot) 16 Fact hich race bbaicr ofthe HOS a 17 Die po 03 is 19 NOS uate nto 1g Capac in MOS rice 11 Conchlne 12 Retro 2 Phosleal and geometrical effects on the behasiour of MOS tranntor 22 Thera Bld tly gee 23, Cairo degation 25.1 Tompercne- depen cari mb rion 232 Vora nd atelier moby epedaton 24, Chana nth dation a BET “Chanel gh ofan 242 Suto dan cok 243. The Baty tage 125, Selbchaoe ete 252 Nanwwechaonel oct 2253. Motelig shana tics 26, Pencthoagh 222 The late Seid ia MOS wanes 223 Impect ntaton 224 twang 215 felocng the marine elcric ellin'» MOS 224, Waklanson bus ef the MOS 20 Conlon Manufacture of MOS deviess 312 Litbnrphy in MOS procs 3 cing 24. Thal ioe 35. Depeation 38 Difiin aati 34 Das MOS tina {SRL The bse lo-fi MOS pros S82 The bse Campemnary MOS (CMOS) proces 3K An toed daopstmscron CMOS proces EA Siena aninaer CMOS (SOLCMOS) proces 39, Contains see 1240 Raton 2 td 42 The be m0 eee 424 Ttrming loge fio ito a aS an 43 hcl dng of C08 cet 44 Digi CHS eee LE Tatodetn 122 staan dene {44 Dyaune CHOS ceute AA Gtr typ of CMOS ces S46 Choming » CMOS tnploneston LAT Choking state 45. GMOS opt nd ona 1/0) dai {1 GOS input arent 452 CMOS aatput bull (ies) 46 The bgt pre 463 Seok digas 464 Brample athe ijout jrocure 465 Gaiam be gost dees Special circuits, devices and technologies $21 “tno 522 Base CCD opeaton 16 1 a0 20 sa u 4.22 CMOS imag semene Powe MOSFET tuniore E21" Intoduction 532 Tonolgy an open 534 Appts BICMOS dig este S41 Inet S44 mCMOS seat permaane 45. Puta exectatns ant malt ted once Memories ‘eho i A 632 Sate RAN ND 533 Dyamie RANG (DRAD) C34 ighpertiemace DRAM: 28. Ene meaty 626 Redonda ome meme G41 toda 42 vot RAM (PRAM) 643 RantOnly Meares (ROM) G44 Progammable ew Only Snering 45. EEPROM and hak mer S46 Non-olate RAB (VVRAN G47 BRAM ftatery RAM) Gnesi of Cv mein ‘Cann at 26 an a SESSESR ER1 Very Lange Sele Integration (VEST) and ASIC: a a "icon Dial 232 Sym i 733, Puncoa ll TBA Ravi 138 Tams 231 Loa oe! 738. Condo Digi Vl dg 342 Thedeage os 748 Branple ce gts Bom VHDL dei tot 182. onde cn pines 783. Shales byt peomnton TSA. ROM, PAL ot Pod pet phonetics HAE. inci tema 7 Pranab ag Deve (PED) 368, Rove dig sppoed 169 Thee hyo implemen Cota Rebvenee Baar 1 Low power, «hot topic in IC design a 3 u Saas of CMOS poe: sotsangton ‘Techni oon ow power S81" Redon of Fa. ty telomeres {832 Relation of Fg by ecolgy wearer {824 Relate of Fg by end ge proces Dis opin x ow poe a2 a BE SEESESS S41 Raut of Ps yds moses os S42 Redoton/tininaton of Pay by deg masures MT S43 Merton of Fy by dei nen Mr 445, Compating power ea chip poe, a alg pesspesive 38 88 Gone a 87 Reece me 9 Creat reliahiity and signal iterity in deepaubmicron ‘ean ‘as 21 aodtion me 82, Depa eishtty i 925 Blcsostate debate (ESD) and ts protection 390 324 Ehrman Po 225 Racer dedi Ps 93, Digs sg itenty is St nrodutin a 932 Choi dbo and xe ning is © 38 933 Cink gations syteeostion i et (chet soon vip 0s 34 Phenomenal tog ere Butcians 2 S28 Thelnonot the trconaetin (tain tod deo) = vg 238, basen = 35 Reon = 36 Bane o 10 Teng sing il pacha “wo 102 Toe ie 403 Yau as eM iad s 142 Pada erie se 10.43 Dowty se ending tse ©2888 1084 Adm pudagg ool ry 105 Gani and eal pang ne *105: Quay 1082 Retabay 10. Poet ft sion pote 1.61 Prone wih ting 1062 Protens cased by rg o e-ospein- 1063 Prone cae! yma sign 17 Piseaicn dbo alr ene 1071 Tarrio 1023 Dingman Sho pte 10.74 Diagn i peprobing 1025 Ding with ues cig 1076 Diagn by photon eminem PERE) 1077 Dingos yea bese cigs 1078 Altre Ere alas techie 1029 Regne 107 10a i Pie Ati a Ds Dba 108 Consion 108 Ree 1 ict of seating 08 MOS 1C design and consequences 114 Soa ensnqne ool iC dn, ALA Sealing cesses el lip eae 12 Seating coeur fr overall ig rey 13 Sci comnqme ol gp ety 114 Potent laos he pcs of walng 18 Comtaene 117 Rebeecee, IndexChapter 1 Basic Principles 1.1 Introduction “The major feat VST Very Tate Santen) celts are ‘etl In CMOS tng Pa exnnpls we ser (Gt St, 256 Aft and 1 Chat), merprommor aed ign proc 1X god fendunental cata! of te MOS devi ther ‘ri fran tang of bdo and manatee of odors Est crete Ths cbpter dries the operation aed harcore GEM0S seve." matrlrepemnt fo toi aston re “The arava MOS repeat he Mtl, ride nd Sencar oer ud tol ery wens ofthe MOS trun Tbe Feat bat othe operation of MOS sss Bele Prine. ‘Thi elope te, with ated pubratons Et flab 1 Ll in Caan athe USA i 590 and on id ty Hl odpm of Cie in ng in 1085. AE eh te owe, inset bowed af atrial pope rsd {ei neh werent The ape develope face ‘alerpaty so indeed the deepen ofthe MOS tater Tagline rit eninge re 1.2. The field-effect principle ‘he eit yicpo ep with he ld of re 2. Thi Spur sb metngue oat, alle co, weith length L, wih Wand thie ane Th ston wa In the ail tre tn mabe rg cae." conn pe ad ste hone Bl of gate se hae re the Slaaroas to sogsie th aver ely ~ ya BT shen ‘mbt va npn Th dct oe bie pat din O° ho rong care ety te produ ote rege hr wlan he aie mg ety es a “2 = igre Ll The eset pene Ate etd itt sore the ena eprom itby an inltr of hicks fy A chang in the fate voltage V nn ‘he charg denity pn tbe hae The ate dy 3 Uneere ‘deere by Ve Example: Supp the nestor son dined (810) with a hho fm, (tq > 10"). The pte apactance wl hen be abot? a “Theol gate epatans O re exprentel lowe qa T 0 W-L A chang inte age 4, Weds tont ae‘Tha ap = AE Gt W038 maya ae 1.2 change i ate vliage to ane tend fee i cen ety, he ha fiowing a xamiontion oo mae eva the pets ofthis expresion “This hen 10 econ de fg 4A 10 ‘too (23 10%). This pone ovine tiv umber of eit rene eopper waa aal (Case b Theat miei fe epg sin. "This has n= 10 conn a hn 4 ‘he tranonnetance 9 of MOS trator the mato of change ‘chara een 10 Ue comeing chang Int oa: towne SE Theres gq = Gh SE In hice a trmerndctann of 10A/V ror caso ka lta = pin Made TC tehhgs lw ie els of rom the above emp, cha tht Set devi ca ty malted wth masofartor materiale Aware of th tiene ‘ed copper pide as eon 190. Carman ee Aevng te ea Aine at 1960, Howe, ase MOS teasers fin mas the ol nh iene ‘eathroagh fr the at Soop of MOB trae ne with ‘shan inp son techno aed the scomparying oar {othe pla pone nthe andlor ace “Geer ects neta i sen bern wid. scp itary scien an bs th th mater. ‘Thaw pect tine rege product to fection creel a «main operating Shum isonly 10°, whl a f oieon 50°C A comparison ow ‘er germanium (Ce) and ion (1 materia sta preted ba a aaa as ante =e cotirng aks Eccl a] antes [asses Sexes cg | 8) | ts 1.3. The inversion-layer MOS transistor A teenie ing of lero ayer sMOS taster, o spy “AMOS, she a gue 12, which wed to explain Hs tute ‘ours sd drain Th gate cetrode' tale above the zea be ‘on then. This ec ether wl ploy ese tolybenin ow dop and ths bate plete Seon ne. Normal the sore aed ra ras aly ped ‘mae sie ence, The inane ot 0 pa gadsre ck fo, whee Rs th sh rst fk ma {ela shat rstanos of the sure and dn sar tly rege from 310100 1/3," dope conser i the pepe sate yprosiaiely 10° ~ 10 ate per a wile the camel dope ‘ret! aisneet platen tc) i been 10 10% nome {era A pcan aso die sth above meant {hatin source and dan nan peste igure 12 Crome of a eee nMOS aniar (Character prnnten of MOS rtitoreotictire 2 ‘Those nade the with W aod length ofthe chara! ad he thik fh ating ae wih pre he ge a cha To ‘ora CMOS VLSI sity hom valor of Wanda {fom O12 03 na = Pun 10pm Conus deep tat wird the ol the ie The dep the soars a "Te egy tand shar ade applation tthe MOS tanstor se roy sai tl An winding of sary i ‘Sree ew ele camo he bhava othe MOS "Tetra ofa ie lion tm wn in figure 1. Thi atom conpriea tion, a inser all nd an eter el. ‘The mc {eo protons a 4 pens when hlconaa lero ‘Da ofthe ctr ae Hote aerate nthe er she." poe charge af the protons an agate care ft ‘Scan cmpenate cack eer fo poduce as som wih atta ‘arse Pe 1 Th wea i ta ‘The slronin ano ny pose tal ery ler. Tene Ieee gruel iio carey ban, which are parted ty eeey ‘Pe coy tase snp Stee sat are te salen ndction ta: Pgue shows eto ad he ‘reg ef pias materi. Th aos eectone Serine ‘he pl sd Ges proper of antral cen } | sine Figure 4: Sma pecan fe ty de 2 ‘yp so mt ‘alm ba ig 1 hows he Bond hatte lca wth eibourng stm oye sco ralOOD ® Figaro 16 Son cosa ‘he cross conductor aly oom the ace bat he Stor pty vein, ashore nr a. nan lator homer, fete ass deta ns oc the conden and. Fig 98 ‘Ses the etal gap onal asa Whar A feces bw sce ter crise an na, The ‘ny ante cf ara org oe he cocina od ad ‘heedrn hae an oa mbar of poy carge on oa, nthe mice band. ‘This rode antl coco mechan « » ° Semiconductor trae kate up V of th mem The Intodton of leet rom gop ot Vn zona tal fron apr "oor nom. Th weed doping ron dranatily cps the yal prope Te flowing ae ‘Shor the lato of wernt mea the pd rem of ‘een WV ey aba — Rises line, | Potion Sana) |S fine" alent fr burn eased gre tu Boon oe ecto sta sco and canto there prvi a heton ‘mei frabon with oe ot be mihboartng io ws, The ‘hc mon lteter, Tr he cn betel lav ‘ily wih testi cory farina 00356 awn the sory ban dng ge ‘Simeon apy when a rowp V tom, ch porpon, prin hot, Tn ntl Te ‘Se reglarbodig ttre o ale tn thre ey ‘mei done htm te ring mys etn. The fem ons into alone ate, which ete wo eno can “mpat toms "Th nr vl indict by Bn gr 17 el be Fe ee ‘As ceton with theory ua gil proto eto a he ‘ance dan the concn ban. Te probably emt 08, "Tha Fert elf ail monde ten sd a eit Er vel “The Fer Bh ps sro ‘cle ated arr he vlence tad, eee tthe ‘st tad nan np asin Th oe hyad diagrams wow be wal to xphin the bait af the MOS teams Thisexplaion i precedente sete ‘Se operon othe MOS capaci, 1.8.1. ‘The Metal-Ovide-Semiconductor (MOS) capacitor Figure Lf soe rm action of bate MOS capstone ree {are reais! to 8 MOS trate thatthe sore al ln ‘itis gos a oat } prssersdesrsser reer eaees 7 we o oo oe salen Mra ea] 1 Acsmuason (i) Deleon (© fade dg ce ge tom) $e posh ae) 2 Spee cr ee) Fgh 1 hn etn of M08 srt witht wae ad din ‘nTime cctane nen ue anda ‘The ptypemistae mae wth an clr dpe striae brs. ipod anda ara wage spl to the gt doe sown in gar 8c The aque Cg ot sin a ‘compete by anil bt pote care Ge site te Sect ty potiey cage hs wi cme a the Sibyl Th sre he my she carr inthe State. This rami’ posse comin th pov char {Ge sta renner nn ae coe ‘Toerhing neon cp be wed Hl pl tea tient tn pers wn th pet th gle aod lesion with rec 1 the a abt Ts anton isshown inthe seston fae Th pasve arg: wisren on the lini ue mnt be outer bond by 2 gai har a he 3-50; inert in th eistate Pew poste. cel ‘nin tepid way othe sate sare to oda wee ‘hare dep ner. This ele’ prc tap en the eae ‘rgot te deletion lero th pote sane on sh sami (quest. Chay, th with th depron le nth li ‘em suton& propos tthe te tlt Ie linger 6 ‘be pm a oy cong tc ‘hein er MOS tess. Togo ter wert ‘egy, Poon aw i pl to th ret regs ot {he OS capacitor. Thaw rps nde he luni t,he 0; ‘art the depltn layer in ic and the ype alin abt. oli arta to vette the shag dition QU, hs flee Bl (2) ath ete pent fe) i na rps a ‘tocton of the dns «ow th 40, et P40) “gel a shee 9) = deel potati t postin 1S ase fom the Si 510 teres 2 = sac cae: ‘Thestannn in wie 0 pace chargei pris comsdo et. Thi ‘alot tne nthe $0, flr a which ee p= nteeton of fea (1.2) onoe gin tesla Ea) = CC. =eteraton conta, Ingen formula (1.2) tr en tlt potential 50 = C.-24O “Th cell in the naar th coat and the ese po ena ear Sct of the deter» om the 50 ntertce ext ation In whic 8 comma pce cari poet ‘irl. "Ths ened ob ire the delat aera wth ‘nd 84 = the ttl amber fd ntgating omul (1.2} once ges he dete lt Be) Me, Intogting Srl (1.2) ew gs lat enti i the phe son ie Hott soee, ‘heer the ace ll in deplion ager with tnt pce ‘Bare © lina con of we te et pote gee Ssortion of = The sare carina dpi ae nly costa ‘thon he dpe of htt hasta aan al Gia = om the 84810, itr, practic, the spacer probe aed tothe dpe pre whe ext te mete ‘The aluminate nd orl en cae depletion layer re ued obec. Te slic pte | thw rego are thre conan sd th let le. "The abe olson aplaton of Pion nw to th 308 spctorteillstated gue 9, Dusit the agra ‘uc y dileracs betwen tenet oma of an non ‘ide. tre age, the slr lapse esr "be round satrate oie the depltion region. The obaevaton Ua the eet: potential sie atin ne peti er is parity importa.“2 2 3, iene he cece Figure 1 Tena oa MOS apa nd he mie age ‘tin Qe), ee Aas) adr posal) 41.3. The inverson-Iayer MOS transistor Fgire 110 shone a cranton of an MOS tania with OV 98 ‘Motes eran." ge a cnn he aol ney Dad Sing Mel One Smear pa eager {tthe alt engy had dagae au that th reno ote pt dosnt at he ditrbton ‘he a lettin the oot, WE one fhe elton res south 9 eam te tire patente ad {o'h homopenne an dei of aa seis a [F=0) Tae ‘chang othe gee aad ora ang inthe alm Goel,{on lon ona Oe Fetes ofthe fen maeia n Ue strate wl ie, Td work etn (tbe wor aed {rear sn Ske rom te Pe eet ri) ly i ‘When te wage betwee qe and suc e (Vge 0) and Ube tl gue Wt ol Yo te icone, ne il Sow fom he tal oth emo orn ra tl wags a tes tT lg a inte ata andthe emir seen Sg ‘Ther, re wl beh cna prea ees betwen ‘eat a abate ch cae they tao bd aon ato wate 0 faba he eta ‘Need oper tt bat cto ce ee es {wk foto fh al (sy) ad he ned () b Wp = das = f=. Sce eli hh te ev serine tal eae ‘rote cae anda athe endnote whe 4 sma pov vatag ape eae le the wc, de {tae awa OV, be a Se 11 Tho ge char ‘Sina ys tng pk ae he eon ere he ‘each apo ishack ein fr ee ‘iced, Le a dpion e. Te ick of this det r ‘ecb the portlet tho wre. Tht way Vp ow cof wo yt 1 The tage eo te aide Y— Ve 1, The tg cron the depeton ne “Th cpmitanse ete he gat date sw ii of the eo cnaneton of the ee xara Ca ad he dept ye “he tet Vin ue 1.11 rye the hres ete f te ‘emir The gue voltage a nl he banding the ‘Hoa aie encly 24 Fee the preset, Vp ane to be Pan ot rene 0S wa sn igus LI: Cnet of» MOS tame nih Oye a fa and te rmepandg eg nn aga te gt voltage fre incre (Vg > te he and ening ‘thle willbe bg an. Tuto tae Inu 112A compat af gue 1? and Ste 1e reve at ‘oem tad i he ellocn outs coreponts 6 an ype ooFg 112 Crowson f+ MOS tir with Yo 0) ov Ygci=0¥ and comopenig re a an Duo in tn sls, owe, sh coset tad enesponds wo 8p type semicnctrey row mie ge ha rere Ben ‘Spies stons sendy pr, he inert Stn whth at ar mbe mgat cng carers Ceaton i {hoo vrs er aly perl by he ton, we fee nay errs nthe pipe ntntete. The reson eet ‘sting coe ete fhe testers soar an de No ‘et vs inthis hana thew bn vag dilens btw {he ain and yours tral T= 08 1 Vx = OV. Tho me ‘fel ni cal ean ecole bythe teste wea Atcuming tht Vg > Vy fet of ines Vi ot OV ae a ‘ed at the ating res 1.02 Nin< YF "Thi le she hero rade ren ofthe MOS trae’ peting cae 2 ie pit amos aks pao ener fo te 20 atest rp 8 Ya Var “This ee soratonrgon ofthe MOS tasters opting ‘Tee tae eon ar dsc partly the owing pagsears retrain { KEEP ag eet ds at eae gi sae (eee oe cies io aot ou ae ee Sacto “eet at ase ts ‘yg ta cr Soca ee ce ee eee Sic So mime bibsiea gin te nat oon ior ftp gue 11% Conneaut cpmatigin te in de) >ve>0 Van Me An incre Vn ith Vp const doce the weg fren be ont gin an hada te dr: Tver Ege gps ike dn when he ele ieee betwen the gts ad case! ‘the theo voltage FT hae nd then glen wth {ho drainsaetateoetin. Tsseatin oars when Vr = VeVi, ‘tt akown in fgu Le havnt ain {Ye Figure 1.14 Standing cn fam eo tut fia tantg‘rue saturstion rion { Yo? ¥4>0 en {A “Th chal nd mo one cole with tho dln wie Vg se ban eV Te testo sown in ge 118 Fie 115: Sinton nh tron igi, Ya oH ‘Tee lage ea the cad pit ofthe inverse er oa Yin Vi ‘heey the vole items eto he ae aed cal 2 ton ha plac pn coro be th agin Sra the eat, the La dtr bythe vl Ve = Vp = fepon The lite stun crete desy proper wero eet rm the nose her to the delta the pel pt These wil stated a ala yh dain ea > Ye Fg 116 shows the y= f(g) character ar vane te settee I ag = OV, hot fg = OR. H Vg om ha VV, ‘hon the ean petri th de ronan the een a ‘pas sat iar lionlip with Vn Caveat tae to pmo ong came Inu in Ti The tation ete the ed aon im arc ae > ov Ww uv W a5 — igre 16 The =f) arcterte 1.4 Derivation of simple MOS formulae "Te neo age MOS rir saw a te 117 ha width W perpen othe plan of he gage nn oe opcance (Gq anit A comnoaly-wel tfe Ge/m,wieoe wren yall eae 1a it el ot pao z a Figare 17 Oe a MOS ensear ope ne ieee ‘Base on the smears te lowing oe st e+ a+ Qt Quo os ‘he cori i tin a gr wit id Qe = tet ge Cm QL primary asl cca which i pce las pear 1 be sea ne thi gta ie (ye (Qu = thie hong inthe eso ae (Ca (Qh = te Bead haga the deplete Cf ere tag ager than the inversion er shih depletion lager fom the gc The charge i the deplation Iyer can the be ‘cee ent Que ‘Th asl vag Vy ene o beconatat. The oti nth lain Bo) Windy Cae- hob 113) St (1) yd aa ry VV Ve ‘Th tal mobil charg Qn ston a thea with gt tito Qe = Qe Weds = -W Call Ve=VleIae (18) rn en wicatie-m-ve 8 ‘dc es tan he et an sr en in oat (8) a 1B as vncy wat nh the cag mie om the soe to ‘This he vlc ofthe setae in the enon Iran ed wey a an where ibe saci ld reg nd [i wpnevens toate uty he eon a. 1 poco, appears to be eal half the etn moity {nthe mete oe mete 23). Caining eget (18), (1.2) ad (1s) ye ect we— viel Mas) Sabteting y= HC el La de = fo W-lip Ve Vie) a¥ie) (0) Integrating th e-adse om 0 to and he ig odie fo Do Va si: tant an)Bustin (1.1) ha @ mu van whe Va fe the ate fe Wee Ve tai tad Mato? i) Vg = Ve thn fg =O Thiel res with he ae soap on st Ve pai fran erage AMOS traitor Te term) = ly to repro Thin ctor call the ‘Santor pinion ad dope n mary. The unt ren prance which depend on sh hing Uw oxi ts te be ‘The unit of masarenat fr ath 9a A/V. Howe, A/V? ‘ue mV are te st Somos lta. Fo an enna MOS, fetter 2c 12044) to 28 /V hr ee ne According fo eaten (C0), fy, woul ech 9 mason a ‘el thon dee fr rosin VT he dca earaig ‘es 118 and 116, howe its sated th ues ena ot su aires Vn oc Vn > p= Te asin i wo pralng repens wich ae chaciindlfycoepoding ee {Elgg The vos nel exe re tind a lls 1 Tif te i tc a) 2 The auton ein. Vn 2 Va — Vr toa 8-H as Accoting io epantion (1.10) independ of Vin the train sinh ot inet Shih shal hn be i ‘howover, MOS transistors show a fite output impedance which i de Teale Seid ce Fes ie eh the Hl (or) and the el camer tags src cs tinutr eho BS mA/V nal Tye OSV he ls = $V nm 8 re 118 on by the iat be ps where eatin 113) ye tion Uy equation (13) " 2, Rig fhe dtd eve: the stration pon, wich ie elo teat (19). 1.5 The back-bias effect (back-gate effect, body effect) "The snp MOS fone derive in meton Lappe to be emo ‘iy meutcaory in mt see The wry ipetat ac-i t Ie homeo, 10 Ince Inthe fame atu the mda af the reba wilt by the strat ened he ‘Sshegn fet othe dein cure uring normal operon (wes Vp at a>) depletion ier aformody thon fe ia 1. However, to hk ft 0 fran aMO$ eimsnwot wane ad Ve <6 ra MOS eaten taste + Dato ce normal ans Ceres ws toh depo este we ‘ean AMOS depletion rata ad Vy > ‘pin tor gue 1.21: Shtc mei fe iret pr of MOS ne 1.8 Parasitic MOS transistors MOS (VILS cute empese may chalga tans This1.9 MOS transistor symbols ees igre 122 ample pre MOS eae ‘ators Ty and Ty ae pra iy he fd aie, Prati MOS ‘Eamon ya itercoaetioa om he el cee a the ama rata) and Ty. Thi oe hk xan ‘rh te ate at, wich ee ht the thd hag Vie {Ty The Geld net atthe alin strc sn Tye here wet ‘han nT and Ty Testor Ty wl aver coma ie ate lege ‘wee bd Fn Miasy MOS pfsiution proms wt a ext dfn ote i anation to anenly cue the thrall tage Var pa ‘tc anon For th panned ore» Pp ager nat thes de roe a pepe bee Tie ‘ch more ie to creamy ner gre [Wu eters channel stopper pat and yur ing 0 ‘dt hve boron an phiapbores ipa Note: Puriie MOS tai appear i ipl ces, The ‘ht a pi ita a ir ge Paar IC elie ere aly dewopd op gr eo yp ae el ES EE « » « J 1 = do ad c 4 | — neptrepmvnnvence ita om ‘ae titi ae 1) at om nent thi chan ater dept deve. 6) Taeoutward poiating oe ade that the anita pean {lie bese Eten rt aden a a abn he line m+ dinate tht hi chet elation deve6) Thieme an can ened trailor tla fo Tis peta anton by dan not mesa emir 1) Thin gona embal prnts& MOS trator of ay te Adept of he above symbol ae a vd MOS symbol us. ‘deere be inerreted with can. iw lowing eae grey opt 1A tear opmbol wih a takes Hoe Beton oace and rin away an enact ort pe ‘Tae olin ee 1 el gon hak le mo le m0 sos dtr ine hs eal MO ater igre 124 ann yl we apo ek 1.10 Capacitances in MOS structures gue 125 irae te MOS exgrtance, whow vale depends oo ‘ch hog aed the Gequncy a with tro Seon 13 ‘deri the MOS capactanen and proses » quale dion ‘terete cages, bse and woes. igre 2 ows a pat of cin of the rtge direc aa oe Figur 126; Capstone arr af MOS acre“Th aio region af the CV caren ere 1:26 explanl se 1. ee Vp rs ptype hata > ean mip suber er the se etal Mel eg a aot a ‘inthe posers ora re ler fh Thi ‘camo ne hn in emparian with th en the Sent ae og sich mat Now, tion oes emt ite se the MOS eptacs oeal o She me eager Cy Deriins only appar at ry Meh freq (2 1G), where the dnt relaten tie oy ‘mgt Bo the hese, my 098 (=10-" 9) 2. Ye Vr thas 4 0.2. [AY oad Boones mre poste the scupalaton ee berms fr aptype sberlin layer raed eer {he gate wen 95 0. Avleage hang AV atthe pte cer 2 ‘Shange 0 ee cary th ge a te dpe ner. a {he tal cages ftw dee by te wri Snmeton ff the ate tascam an the ep ae apace The ‘space the dere 3. > Vera ppp atta VV ean mp sbetete 1, hi patie sa ives er ete. Th lier tin eon tothe ode mae” At hw equ. ‘(1H he egtan wil gun bolt the ne spsctane Co Hower the inverse ner pnp sb ‘Nate omit feos tht ae spp a bri by he ‘econbinhn of mint, be. the dtom With cotaat teapots, th el ofthe rato twcombiation pos ‘ed Ths soot or th ome capacitance showin ‘ee L26 higher een (> LB) At the Bip ga. ‘Sx thecapartancey wil bebo ial there comertion ‘be nega hd he dpi ler capac, a duced he MOS capcom Bester sex con cm ftw cpaiana he ee caprane Cabcenn te ge ‘She ton suc nd eps Gy ben th son ee entation bel "The mag can be expres allow: Ye = Vat dat 3) ‘The aw fr omarton of chane yet lowe equation: e+ Qn £Q4Qs = 0 (20) Va. = vlage ss the nde ten a io wns, act ptt eect a stent Ses ial te on warps oe (Qc on th ie, (Ge Sch in th Qe = hag evens ae (Gy Zhe in he apn le ‘Te owinenpron ra chage A, ngewe nb deed ftom equation (125) Vg = AV +84 (ge cnstat thas dng =0) (1.25) Subttuting Qt Qu Qe in oution (1:28 ye 8Q, = 004-00 (28 Qa consider costa, ten 80,=-A0. om aun (125) and (2.27) ye owing express Nh. BN, OA Bln BAe Bq." 8G, “80, ~ BG, 8G, 296 = 6 ~ th al camcae e MOS ect, $0 = 00n cepa, ~ 8 = 6, = cactus teen the os mice tl the siento interior (dept er capa)28) Cacti rapusle fr he dp ne C= V cave The cso C tere yh nts png cnt ma he Pct ites ote rp ae Ta i Cin Wiaeg.-V cave wabe daw by Ge Asma Gaon Tec cane wate a dag MOS manag to een penn of he leo Figwe Lat seers HOS cuca wih an anal a sina th napster ie STMOS emir ih on eur sort ce Bt dn ‘Soren Thess gray od» MOS tapas 6 iad" mrecir youn MOS cro pr, me sre % ag Figure 27 MOS pata wt se ano da ea Wale hers neson ee na MOS capac and be Taber ef the gue capacaneu untanged. Hever air, ler rated when p> Ve Tiler i meso er ae ‘sid y then aes oy theral geen obit rons of mists the iene Ta 9 an ca re td ab atone a ey high ence (> 1GHE). Three, wil mw ot Cu ie sl wrt eprating codons a ie Gacy =Cait tal) W "The depen the eapctance Cy onthe apo walege i it suman lowe ‘Whom Va Hy th wo nso ae Hee, the vale of ‘drt! y the cane! with W aed the gate weap ‘these a at i= A=W Ca “Wn i>, te in ein ae, Hee Cp determin by te Oana gh Cpe te Se} eae % [Note Thre no inesion ier when Ve Fite 1.28 shame Th th posure apace ten Benes Figure 29 shows he age mane of capstan nea MOS ee Stor Thow capac ic re epsom eae defi Con G+ deat aad our ube capacitance, ‘ich ar oriacasy dopa Vy Var repel ls Con ati nd pesouc cpa which {eltag inp. ois Gp. gated and guesoarce capacitances (ri the‘nvr ae) which esate dependent Yi, Co gitombt apactnce, which on aesay ‘ipendeaon Ve. Fe 1.2 Captain MOS ee row lo ted Ca deepen gare 1.20 re ow) a) meio voltage (08V to 0.8}; ‘aig tor 2 em 3m ela Seton for an sh jonton “Ter Cy An Co pre ate orig capacans that a iy the mst th tego 0 the ain ad Sours, ah tka fee eee Thee cpt ‘ela elas indepen. "The ptcsabrteeapcance Cy nly impor Yipee. ‘Now, Cy tn eps 0 Cy (120 02) “WLC The Invest le abt theatre fon the ples Cy whee ‘ "Terms Cy od Cyrepront gle dein nd ptoscursecapaiacn, expen which ae preat ‘nthe favre er [iar 8). The ‘alr of tan capaci dep rong on he ar ag on he ‘eemin of tn MOS tain The lw cae ae sng ‘This expo for Cy erie ow. cued Yps VrandO< Ve Vine I rca, na iteepltion betwen the alec Wade doa ees to th atl als, Wid ae shown igure 150.ele Fie 10: Cy ad endo Vn YP ‘The show exprion nce fr the stesore apace Cy of ‘atrtod OS ranaistr expla withthe lo ge 11 Tie pt show a rnc oft MOS ait la th raed ‘elon chanel dor notch th rin rt ba ape pik ‘ore thecal pte xc iV ign 1: Cri fasted MOS water. Cy =O Gab rc ‘Busan (1) lands othe owing exrson i the age AQ ina han wetin of gt de at ton 940 Walle Ve—Viali-de (10) ‘he flowing expression for dee id rm equation (1.9 A He a Wg Ve Vea] HED aay ee eae eas ee ferugies a: Ca? W2- Vp — Vr VC) 294 We ave) asm) Bua (L.4) ys the flowing expenion fr the nin eumet vata Pa cyy vt 188) Satin aston (1.8) nous (2) ye Ga W-b:2-Np= Ve VEAP ayy ag Waa a eqn equation (1.8 om the sour othe inagany dang VV GW 8: Wig Ve = Via oe [ar are eaWiia Siena C3 294 vere 90 = Ew tice-tta=¥) aay ‘The ptoscarce capa Ci cas be Sound by dieting Q ia oui (128) with pect = (1) “The Gy of start MOS teste ithe only te id of (he tl awe the gee dn ean or1 summary: Mat pcan in MOS triste not dependent the eral yp ma. Forchino 1. The ide capac Cy a8 Ge OW)»: whee 08..09V and 3c ct 2 Figure 1.28 hos the wags dependence pecan caper tates Cy ad i en he in and ore ae sat ceed, ‘Sie thete fa MOS apa Fre 130 thos he ‘Se tpentcr Cy nd Cip win te dn nec ‘Etc voltage Le daring nova amar operation 2. The patente capacitance Cy ie whe Vp> Vand Cqos02 Wid Ga Ve He 4 The oeap capes Cu Cpa oly apace ‘hid ae wot depend onthe exer appl Welage 111 Conclusions “The basco fhe operation ofthe MOS tami can Be ‘soe! in frre wap Th ty ng approark doped in i ‘Gaplr shoul! provides god finden woerandng of hs ‘cation. "Toe curetolage Cuca prs te devel By ‘an of ie ep tant xpemion fo MOS tener be tng tn base pin f MOS tranastor opera. They hae hectare bon gc oti chapter However, ee facts sl bets daeipon of OS treo and ae rie ‘rtrd ue by commonly creat naan prog1.12 References Genre pie RSC. cama, Tiwary ao appllons of Sl it ranator Wily NewYork Sat sm, ‘Phys of Seniendctr Devo Peedi, Wie 198. 1 AS. Go, Pigs tt Teckel of Semicndactar Devi, ‘Wie Now York v2. Tai, “Option wed modeling ofthe MOS trast, Me Geo i 1987 (5 6K, “Iolo to Sal Sate Phys, Wily, 12, New York MOS eapceanes (6B Groom, ‘ho Ania Md the gt Cpa of Sash Gaoatey 08 {ERE Tamacsn on Baton Dv, (7 d.Paaa DLA, Antonin, nd YP Tit ‘Manet fain Capuctaes of MOS Tras ISSCC Dont of trea paprn, pp 23829, 1962 [8 DE. Wad and RW. Dat, “A Charge Ort! Model fr MOS TrsastrCapactancn’, IEEE Journal f Sette Cheats, pp TOIT, 178 1.13 Exercises Note: 24=088V throuphoet the ree 1. What haps tothe depletion ine in gue 12 when the sb Sra (0) contacted ame vllage (= -2V) kta of ‘mt ect oc this onthe held ge? 2 Cure fy in a rami (2) 2.5 when te ptosoree soliage eV. The cent eth wien V = BV 1) Which ear operating ego (mar o sturtnd) do Ae lero V craps 1) Cadets and Vp forthe gven tras “ 1) What ype the wansto hows? 1) Colney whe hs rir ha thse 9 a he te 2 Gio4 Gi: 1 Ly es a n4ype ebaneonent MOS ans athe caret ds > 0, exp the owing 4) This antral in sation rego, 1) Ths coanction fle called «NOS diode 5. artis xe, the treo vllage V8 OS. ‘heb ‘hernal eration flea pi 1) Te bom sete nsw be en a al a of {AMO wats exd. (ep hs retreat nl the pile depen ad ‘oie In fr the ilowing wale fs “1. 25¥, 1 waasy, 1) Aa arn raw ad to the rate nec Rapa nrc a fr Y= OV ad a Ve = 1 ©) The sae fatten ni 3 i conned ton ‘What happens othe depo nd ienon gee Ve = OV 4) A ot oa wd to th sect of exci So ih wig te % ¢ % pr sbrwe Repent exe Sai Y= OV ad Vy = 15. ©) lapiz, he ae thermal gmat eheton lp in {he en bert. The rang es etn the dep ton lige oi the opposite dito to the appli extern Drnw the dieton of movenent ofthe thermally gee dro aa Hl fr Ve 3V a he strate of ene Tis situation comics fr «lenge pind new ei6. The lowing vale apply @ Nign28¥, Bot ma/¥, 2) What ype the asso od why? 1) Cake and dre the ah Ves0,05, 1.15, and 28V. Rape) K=0sv"2 4) Aang K-03", cles te cnet imp fhe tosis fr Veni an be Va=1¥ {ate the dna romain ot 28). Vg) K=O at ‘The long vac ply fo the en shown sv, 1) Cane You fo Van 2¥, 1) Determine the tnondictans of oth MOS tants or ‘inane Whar vo de Vg ech when gn 25 V2 4) The aame low outpost be maintain when the ad ‘nosso rpc by a bance taltor wih ‘gale at Vg Dove thre deer rans with te ‘eyo ere Th pct aif thi trator Wier b4)028. Res of wean ‘on are onsen tlw Ta Ta 1) Deter VK and thi easter 1 Cates a am the graph =f) oa at fe Va site OVevceV) 9, Define an apron the tatarntactans with pect the ‘berate wolage Vg when the trnasedactaee with apa 0 {he nr gt tg do’ w=Chapter 2 Physical and geometrical effects on the behaviour of the MOS transistor 2. Introduction ‘Tesinpl forma eo nsec and 1 act rb et ‘ede let ih ann th har of KOS trata Ut {he mit seven fea (17) apart adopter ped nie eel pial an rome ffs which gies rae the von of MOS trast ‘The om ae thre ‘onmery tor pti than th stl perros ered ‘MOS crate, Te deviation boos ore sgt se MOS Wate "Ths hye sti» th cri fh mt para tn ‘eile degra he prince of MOS doe. Temperate cet “hse ar it ed The eingess e omne. 22. The zero field mobility ‘Ase in cape the MOS traitor cet by date ‘ied ty the gin tr 9th traitor oe ae nce an sehve Wan L eset th amir camel with and eth SrectilyCa sero th gate ave epactonce porate {repeats the acta malic of he carve in the ce ‘Te male can be gute dient rm the nr do ee ‘mol Tatoo, whieh pds tbe doping eosetaton i the joss tlle biti la 8 i i Figure 2 Cane mt and iii co tin of (ar cenonatn ae tamer Tra rttrte doping coocnration of 10 toma, he moby of ‘cons gabe eine a ae) ath ene ‘Sele Thini the major aa they fn OS re “arbi sont the tins high ae te ah aly MOS ‘east, Homo, sv et eal wore the maby2.8 Carrier mobility degradation ‘heat (bras nd eration whch aes the ‘iy oft ehang carr inthe han Moroer, wen the lp temperate sie tery an ne of he abet tenet tere oe by rows tation, hs wil ve «anti eB 02 the ‘coer moti and tha one ofeach toe 25. Temperature-dependent carsier mobility reduetion As nae nt peti tempat af MOS trast et i ‘nin we difeet ep 1 Temi ah malty cin ot a. M08 Sere ee cee ee ee ee tater son ~ascmn-( 28) es 2 Tete! ag Wf bh 8 nly wan eae eer aa oeeteceeeserara oe Sepa wiht ovrre ve one Aart oft ct oper Ins of °C ay ee a 30 decrease trsistor pin ed de of oa mV thea tetage In coats, a ec fn teers rela the erent ‘reg MOS aera ae oa duction nthe mains op ea sh 23.2 Vertical and lateral ld carrer mobility degrade: ton using sre operation, thefts moby of th ari the leer haa gad Wy mons fest a ure 22 ‘These cde the vera ete eld the boreal dee Bld ‘Brand theca ly When the wt ctr ld ght exis nan chan levee sgl aut Yo th alm rir win oe ‘Th rrling sur aterig” aed y the ed In fre 22 The came redut the ebnon e ed obiy af the ear 1 [i mame expr ear rst with rept 1 ‘weil Sid air maby Sagrado The etal ri ad do ‘andro h a wltags and on tear lage Th tnt ete thee vag ad tcl ea be peel Slows TASER sehr, open the else bit, rpm the Rem evel nthe tate and a ar comnts, ‘Th acral mobility i equ tthe mbarate moby when Fy = 0 ‘Sie enna hs iano the ace ad rin in he eaten eatering tr ses wien the hein cet ld Fy gh Thi Cat ‘Soe tial ld Bt carr yl ew ng sled o Bi ‘Sh ace ota ae. gon st-er aprxinatin fr ts ‘ely strat’ penne ie Be Ba, es) a8) oe whereat eo) cee “The am erst the chanel gt, Sutin ato (25) ‘to (26 in ognton (24 le o= othe en ati . es) TRS HN a RIT) AL ih gt vag, the vert ld alee (epsom by che otage terme onan Vip sod) may etc he rent fc Tesnstrs ria tose iy boot S09‘ rao one may be theta magpie Note a hs bral ed ‘Slo othe sen donate fh daisoure can. At lee ot Vim, this hota Slt ho rear te dzone {tbe chan of 08 trite by son 30%. Tha the ota ‘dpm tty ett aso om tr "hr of th ln sr an! length, tere he hanes man satraton vty ay Tl ss he Sanath andes nae on Ue caren wc a th be ‘proud a ee lation with Vg Ting = Sat Co WV Ve) es ra nomad with Wag 6 propatonal to (Vat ~ Vf "Three te mite drive Carne expe hy mele Ince oe ny echo eration cae (1 24 Channel length modulation and statie drain feedback ‘Te wichita gr Ld how ‘teeny the stun spon eae a even tla. T ‘omroon pee vin neem! devin aed Utes only thane! gh dain an sai daa fe 24.1 Channel length modulation ron raion Cis Van = Y= 4) rat ga 23. Tho pert ft bse MDS traitor his repon fs in ‘Son 13 Cleary the end of the eon ae (i alle! the ‘agin enn doo nt ach the cal dri To fete gt ste ous LA Fie 23: AMOS nari th stron ron > VY) ‘est ein tin (49 tein Smet Sesh a miele Spence i ery a a oa So 2 ata eee n= a? en ee hth oh dpi i oe lon eri Tacha inet pre le ‘Setchan Cogent pe mais Ok Beate estate Btn Hein) ean sehr so Ve re ott, ich my ay wt be ein ge“Th she dnc tt he nn ents oe dla (rect of OS trator operating inte stain gia I paolo Va Vane 242 Static drain feedback ‘The deation ra low the ace y the end pote ‘rach vse fr otc od tae fare 23.‘ de Petos cage thr aly teed VT epee ‘ral pita ein ety poprtona the in pote A ‘epee Sepeton rego tae or mii arr Teme ‘edo the bart tht gate feat ast Sout whe cating Snvnon ger A nce in ptetl there es ‘edocs of tn tol! tgs. Tie fllorng emp expres Inwbich A proper oY appar roby avr = aha! am) ‘The fro ye ontnt andere the elaohipbetwces ds: ‘ues voy and til tage variation. The fc of he aie ‘a nck conrablen shorhael airs ha peat ‘ln the thei tag ‘Chante nation nd tte rin back ae he dai cet to vary ih th rust onipatimpence Cone ‘mpl, «cre cmping two ental rari oprting the ‘stron vgn with eqn gue volts Dt ifn rain vag ‘Te raison wiht igh rain vag awe here ‘land a mueltrateldwlage, Consonant ‘ret wil be ihe, 243 The Early voltage Another mu of dibng the provi efits & 10 we the Basi foliage ‘Thi ote i commonly ipl tasitar ry ‘by ang he MOS Emly tage Ve), whch an be defied ea) sehr gu rps te etp ranscondctance ig 24 shows the et the ary voltage on the MOS erm tor cara, Figure 24 The Bry tag rt the MOS war dace igre 1.16 sags that tbe ouput ian of « MOS trae ‘gerningin he strain rein nie: Fig hmere reve {hatte ott raitance ia it ite ands ay deter by {he valor ofthe Eat waliag. piel the Ely wig has bee ‘lad to tthe ling oper Incomes with higher ata doping res, 1 deca with decrening chanel gt ‘aly ne betwen SV and 502.5 Small-channel effects ‘Te eit beavnur of a MOS rms primi deters tpi tor 9 it ceo ag Fy nd ibenly eK. Gen {yth alr hw artes apt depdet ot wth IW ao gL of srl of ae depen ‘which resco tow. are potraly significa submicron aed Unprutiicrae MOS prance 2.5. Shortchannel effect ‘pn sa ta th sr f ven athe absence ofa gt lag, the gas under the ge else {othe are and aa ae bret Spied of jerky ett In nd ltrs MOS an pOS transistors specie. tn 8 ‘orcas rater, dance ete tae Spon rene {esl Theat of compe dpm arc er the ge rece ‘eg i rd. Thi Spal two desisahl it wc {inte by snow suc a dn tine, Home, thee ‘Sh alr in gr al cas ih se a a the rain lg in th chan when > ¥a>¥e- Oe wy crea hie robin to ede the ply wala The at cao! eet ‘hemo woo a ert nti a nme ese ‘i lage rl sc Sgre 26 "The Re i how he i of he ‘AY; Inplaton, hich died a Po ‘aba wage oa Nar wae we ‘apna fh nor the ra thes of tli stro and ean faces (0 Felice the orca tet onthe hed wll) bk see {Se reset of ie ara Thi in Crna the ted oo ‘See oe matoa 72). ‘wer 2 AV impla to coca the dp inshore do ‘oe Te inate pti or rata witht salt a ‘tegen procs. Thee tases wil hve th oh ‘Sek gy iss the Se "hao eb tat depend on the chanel lngh herve shorn et Thi el, rong heh gn Vy We ‘heraing ate eng sete to ne var nedving inde ty Hay ean fin, Dating scene, ‘Sar ofaen neni ion tected nb wg ‘the placa ate gma set of patton and een ‘ee vo trtitn enanc ion ax rt egon wer he "The aera eet of he enced ifsion i sony info ty the Sibyl tnt fra eine sink Sr ner ‘Seon ge somntrtion rains The fr 9 tir ‘ean ence diftin of dapat tne nx an rn a he {aie eg tomar he etic "Te ett he bon {ens moet ofthc profi the afOS ders a ieee routs torr gegen te haa ele ‘aly die the algae At eon nor gts lng hm aloe chao eft tarts to dominate ad th trod wag ‘ells cero. ee Sgue 26. Thee ie more peabaed MOS dvs Hose the canal pan tn ed ere, ach ‘ne maple othe enbanend iio forts tan an wh ‘eed fr te pO canoe poe 25.2 Narrow-channel effect ‘A, the width of a ate devo nos the tld wt The epton eet uke th ge a the gate, whe he gate thetote ome te Slt ride, With LOCOS type ef el Soin, fe are 2, hes rial cae by the echt oth ‘Sac op dpa a ho gy fe Sid lon ge 2 Comin ol ir nin “The don deta rpon cage ha to be competed by an ‘Sig at Stu whofe Sv, eect of nn Top dope wept ponnel ru soeenoa fed oe {thon The del op Sgt ranted ie on Me ‘cnpertte LOCOS esaon an cas a ge Si Ve a ‘gre pane wel proce, the doa pera cro ‘SE et ipa a econo of dope se cat eet {ie te ge. Howe, th that vag ocr 2 ff the bas beak ad too sping the el ie ‘Setdge Pipe 28 sown euronews oe Sede fhe cnmcl th the tre ings Shalin ‘Feat bane (ate 38) scheme To sn fo he exe srw ee, th hl tage sift ad ee dh {ean ty mow cat wit of cand 02pm “Ts nee Nar Wih Ber (SWE) cred to a harp coro te topo he wcrc abn gg 8 ‘Sterner sean an noc cri ha trngth adeno ‘he lage, the gay OC eed ach Sota god's etal ni of he Sl ere ne ae ‘i hg ree ite ne a OS devi, conser {Ste decreed tage Tacuba othe ae ee Shag ee ere han te gig ogre lent an nthe depen nth we th techi) oe linn Acie we wih Figure 28 Su of roi wg OS devi econ of (Seca ith lent el fy ad el ti 25.3 Modelling small-channel eects “The revo section bw tht shart chanel exe endo tow the {Heel welage ie mew cna fet nce Three, "iar ect compote ac ter prt if ot cmt, an ‘tor witht beth et and snow chanel. Forndeing popoce, beth tea sinply be and The irae of trast ‘esis on bodys tor Kare madellnd nn tar marae. “+A sorter chanel ein» lower Vi» wer ad » ower “A mare aoa in Bigher wer ad ighar tear ‘The depen of raster Vr, example rte beh doee gto # Weave Da exe Dy at Dy epee short chal an the revere Shar Shanna! ot with Dy > Dan Dy © ‘Deepest hal wih pendence (nero wh fic), ith Dr>o. Wg ad ae wih td eng of the reece tanto respec ty. (ne, triton wth minim hase ath and wth cae the reece trata Cnmey, the enpaiin of « pcee ‘Sec can bert rll fn he pres fh ne 2.6 Punch-through ‘Taina ands ein MOS er eee ‘Mc net, Tits prenary Wily to oer In MOS tran ‘Sten wth she cane! hgh emg tre, ih hoe ‘lero in ie uc ofan cand device vere whe the ea {sed sourer depion pons wens. Conquest ay ets at {efor fom Be sur t the dia cen then he ge walage eb tow th the! a and the trator upped cond ‘Thiet own se punctrough Te diese wl Ver at ‘ie pnchrugh orarn apprinned o fls Vier gic Naot? a) veer sept the trate dope, retwota the re ane ath and {repre th charge of a electron ‘Tio poctrgh ct canbe wdc dering prong by nen Inge doping eed ofthe rete with» at pane vag (APE) inplnatns The amocned face nthe trl wage he ‘tame be empensta y roc hn oie no2.7 Hot-carrier effect 2.7.1 Introduction opt atin an bot irda errina MOS tami in seat nes ft mile ngs cn in thse Tre mitenty emg ‘This gps wo th alla {ee Bad athe asst Doo age than 2» 10° Vem. Impact. ‘arr dation causes a pernoet change a uss f= Src rte sme operating mage, the aon ects ae ‘ch or niga a chat raat han phe a "There, his ton intel to a imion of thaw ote chee tuners Hoc ence ae ey sg ced ‘Semin ue of te horn doce A i a MOS anasto ‘Todt thi et el aad pede on entra ‘neal pratense. Toe et pat aioe Fly comets we paella te sre Bed al 2.1.2. The electric eld in MOS transistors igre 29 shows pie xa of the potenti dott in an ‘ho wri rata ante igre 2 es he asta sr ei Bf” The bi of he lag rp ois int tor pinch rpon mer the dala wtb. TH cms theshary pei he hrm dete Bl. Twos ts in i a Em ih wag he "Th tal of Bg epods on wo rae paruetinThe Set ‘pop etait the ba volta othe tanto tral Here, {hepa jenn Vn Vale Eg i Bc el ro etal Vf ato Vpn pt cna Aa cee ip eamera meee dnb cf th ace ld ote gh ef ‘hi rumitor an By hese eres The pwd on hr i ‘ae vgs wry eal Ti dua vols oly deter ‘he manus ete lla the daimeatetrate ce Eaten lage duisbstrte vag ae brokdown ie thi ncn and aes naativeofrt ethe eperation af the tat tr . “te ni en ace cere ene Se a ee “ae woud pou of prt ht deni he a of By - tee pst rn fh Ey ea ‘htm gh den ta wea ns ee bc tm Tedoig tie nec hoe, ees ‘Re Sp ier dsm rnd ry he ew ren the etn ere hae a to ey ‘Shape Th dane ee dB hn ym Tal aot Bo gh Pe Bh ee 1 ee Bath er oh Te dno Sihatatop Tals ate cs ven opting ois ede ‘coms Sour mtn mel we set | the drain coocentration. MeMed ord Ege ae csi ction 275 2.7.3 Impact fonsation conduct cton my cade wth olin at af tn pnt ‘aa sMOS eatin channel fac colin volver higher ‘S'S at tos wt te dae sd ee it ‘Rien Tan ct ele pac niin Tle pe fo {nce in the asec ca a and ow aubre careat 1h Pie 210 shows te dependence of on he pte wage 1 fret sla fan hee picasa sinh ‘geen wich Imac aon cera mais oh ‘Seay properties henna Aron mB there ‘sie etn i wa ala tT oo 4 eo 1 os LS Sm gue 210; Sot caret ya fate ww ef 27d Hotearrier degradation Input oniatnn gone high-energy ets le, Tae ‘hoy can setter torr the 0, tres ta enter the Oy ey Se cen aes The rue! ener tt 3.20 fr lo ‘ton aod 386V fr The mbar fcr tat iy the endo very sal Th airs ay bo rapped the Sy, rng toe car. in thi crete {tice tats ab srr" gn and agate of the ring en ‘pce hg re dependent on aut of he ator The ‘gaat fata centage caters whch ex tp tis inject ft es fer nt Si eal arr ‘dradtnn. ‘Thin efit wn coment ello bot ceton eration {eet warrdta Wn infned by ee. 27.5 Reducing the maximum electric eld ina MOS tr stor ie in ad eyo di ris die he Tecate Sgr "The graded dra astra wey snp apt of the cee ‘Etande mock moe gran ty spy lating powporea nih 2 ‘eaily bw cmsetraton in he highly coma area The ‘hephioar bast unc hide dito atte the ai a {area rr ils ch farhrTho ee 8 dente ot with bw roan example stow nur 2.1. The [ned Sa nde the mann ieee hy abut 30%. Te tpi hae the operating wlan be cee! ty 30% fo ‘anor dines“The ly dpe dein (DD) mato ea wo il mea {Se felt chinal hms tn int cored ih he grade do ‘he ros LDP proms sap replated with he aid pre 2.12. ‘No.5jon nMOS neo wih pt aii of boat Fam (Bene hows are 21 "Normal procming, wick extensively dered in caper 3, 52 self erate th aie. Phosboront vith a cometation tha ‘i fm 0 to G1 atm per? mesic plated The lear of aboot O:%pan thse sows i Be 219 ‘hen gro. Th lowe by am ssp ch, ch has Che ‘ide spores thw on hot doo the pt in gue 2126 Aa ‘Sqeot gly emeunratd plantation sie ad «even {ison pod th rating Rand nara wn ure 228. ‘Te smi th trans inlet ld ton tbe ha enn sen gue 21 sans vale 505% of ht obtained in» compari atr t cnmesieal Sele Gunn wre aoa Two fost hi age ‘elton. The tte relay lng gon Wiha dar on Sentton Adept are wl oem toc wine in he we tha {nthe nara A urge proportion oth daar welt op = ene he ate andthe 5 drain ren. Th ab rcs the alone tse rr ts previa dite nth ap \com—} Phare 212 Proms ps the ct of EDD tr and ‘roi ed Ba sl ee "The LDD transite ito rate td ht he ded rage pose iced sero ras the vou a rin eae tbe a sou Cal opto, ween sss ‘th hg operate! welt that cam rr high caete LOD nla we ined in CMOS techn wn oon a Inet As rumen ton 274 the ee eee at eas teem the $5.Ssy nas bares at 3.380 br hee ad ‘3B6V fre. ‘At spp wl rede wth tho set new ron gratin, ae carte ary oe eth oper ‘hon the supply mage ie 2 ha Tn 036, CMOS proce,rth Va = 2.5V, the atom nergy can rach gv = 250, expt Tie tes caine tht sci Ince cere ugh oe re ‘soe, Howey the suber ac ghey ets apy ‘ern wih ruin tags blo 3V. Aus uae, LDD pate {emo longer oui nO. CMOS roses uel blow. The ‘Se thon rept ty wre highly doped exten, a ded 2.8 Weak-inversion behaviour of the MOS transistor ‘An mM08 tito operate ln te ‘saber ran en te {qitesouce las (Vy) I ust blow ball vgs (2), 0 Sure 213. wt a be wn) (win) yy Mase ont ws 008 spe sw by ave wt % Soeele Joon wy or os as os aa? = Gwe ota Pu 21% (9) Saber carat price ad () 08 led alow th trol wolage, the caren decrees exponentially. On ‘igen sea the sap ie ower propria fo the her ‘engy HT Sone ton tl hove bag tral omy to cae n tent ptetl barre 21) ad ae tthe dein (O3)7At (ey ow thet tings the eng shel ur "at may oe on encpiiy hih powereomentin, Thi ag ‘alone chip In tary nde oo cess ad tro {pte vag). Ths operating ein a eld the iso [for The normal hres tat pio th previo {ier der pring i do ny te we ‘Shae ans onsen dabrsurce sg operant wok Ft tag Meir ea) ‘The terme in equation (215) ae dfn fos 6 = walle ail (Cnt) Or = asin am eapetan tug = Sas a= 8, austin (218) spl whn Yt nome tn few Ur blow Yr ‘he sass trast carr Tay tt oo coal andy cet in ttn tata tppowly te ‘he tcrtedcrptnn ofthe Ysvoa a trast opeeting {he warn rego econo! in ora (1 an The Elongate bs sani Ch operating en 1. If low (06) thr begs sa esol caren who (6) Thr ew conser stay caret in (C)MOS VEST (0) The minim clock ogy of yan ia icincee ‘envoy cunts DRAM ar anon eaie ‘ic 2 Ino teanisor operation, cats ae brie ow othe ‘ato hh they te oe Fine 2.4 shows te enedin wag on the testi An ease af te rainscrce ge wl tore the taser Big This Dri Indeed Bier Lawes (DIL lent econ ‘he ead age Vy neh the males td tog nvr operation eons ft trai. igure 2.4: he ee vege ing te ar 1s 2018 CMOS procs na nero Vy fom O6V 0 18 ty wl in the ution fy of mor han 10D ‘The et manifte Wl mina lowe five nel ag {DIL}. Ke char tha tif ery nore a he eva ad the odeling a depute tata -Anwlogue cel wchqs ie wk eso bao i ow rent apenas. The pin of MOS temo open {he weak ton rg ai high and snp he 2.9 Conclusions ‘herman sie in chapter I provides odin int the fia ‘itl Bevo of OS dein Thne ermal wer ef rst ‘Soul bebvoar wh reuomabie eeuracy on th id ewe The contour deve fo higher cel densitle wth wal team, ‘cal ea, Te sa nein eo ea ser haur utd is captor in aio, th magia of hae levi nr esc mene ak. Tet oe tie o edhe easter cent by ota tor oa ie ‘hz! gt of 025 ad bl ‘Thee el its that pe ‘Shootly degrade the pease of « MOS traitor sed here ‘elicit ition. Raducng th noe of he csv oth ecole addon monn210 References (Gener sc iin 1H] RSC. coe, "Thay sol pistons ffl fet tans, {he Wily Som ne New York (8a Sn, ‘Moder Semicouetoe Deve Physi Jn Wig Son 1907 AS. Grom, Pigs tnt Tel of Semicndactar Dv, Jn Wey 8 Sos, ne. New York (6 xP Tit “Operation and modaing of the Mos trait Me Gram 1567 Mobility rdaeton of ease cares 15) SC.S0n, 5. Plame, Bec ity in eda oo aly TERE Transsctions on Bletron Devices, Vol 8, 1980, (6) Sot, Smet, caper 1 FF Ad. Waller and PH. Weer, ‘Kebilty modal fe MOSFET devin satin’ rade Pian, collun Cf, Vo $8, mbt Sept. 1988p Stores ict [8 Gna, “Aspe tmotel ofthe aol og fr shor and aro chanel ‘Soli State Bkctronice, Vol. 2, umber 12.8, 1980, Lat Dang, “A simpe caret moda fr hora IGFET ans apt TEBE Journal of So State Cireit, Val. SC-14, mumber 2, 1979 sei is 10) K. Che, .A Satie, 1A Gre IB Set, "nah eon on MOS trait de We Boi pe tt TEE Tanto oa Bheton Devi, Vo ED, mumbo 2885 (00), Lei aS. Kang, "Hot Caro Rely of MOS VEST cea, Woskinuniaa besos [i] UR. Tostman and S. Chatareae, IEEE rasta on Coat Thy vo CT-0 pp S465, Now 19 (0 Vion an J. Fatt, "ROS ami eral hea on weiner’ TEE Journal ofS State Creat Va. SC py 226281, (3) You Te, TE Spo I 0p 529 ‘Daan modetig [04 HC. de Graf FM Kaan, {Compartir oto tr cet dn” Seine Veg New Yor, 190 (15) A. ly ot "Derk Moding sin Dep Sain MOSFET, (08.6. Mant ad P. Ange "semiondntn Deve Moding with Spice, eGo iI 198821 Exercises 1. At 260 he mata fa BOS tami gin tae 8 it oy ad eth wea Fy AV. 's) Calne the gin when te eral peating a °C. 1) Cate thr! volage th pera ©) What woul be theese af thi ocd trl a gi the tnd by cat nae SAN, or inane? 2A rence tran with spect ai of = GRAB han in ge = AS Memon oo octet oon hal wha wh 10h igh (tune Dy = 0) 1) Coleus! wlage af ait With a ages ‘at of S22 Wht apn oe hl gs ee it Wa meric oO pf Dent? 5.) Wha the et on the gus Stor of amit with a wen te eb aly ened oye ‘atonal iy ary ns hb ete, Bemba?) 1) Calne the disoure wage which the leat rear (Sin moi cer OVChapter 3 Manufacture of MOS devices 3.1 Introduction [at the midigti, the ROS se gle proces wat the at Smolyan procs MOS LSI aed WLS! cacutaExanpa of ‘he coiled micoproomors, saa protean DRAM ‘ih strge apc of 10 Kt, 64 and 256K. Howe, early ‘Modern VES dest ae mi CMOS procemes. CMOS dest {reaps chpter the thay ed rth scare ‘Senn the ape “Morn sep ston CMOS procs, with haa gts be low 03pm, hve emerged om the mueros meeting process ich fave eos ce te item othe MO tear [ert rte Dalene heen the rns mee Chae oat Uy the lowing are The gp of oer Aerts inch type ad p- ‘Spe stn ef urate wth epi ler ad lating 1+ The cn of the gate mata ntl ee pe mater wae he alumi ingle int sroryin MOS (ea One Som dc) lyon has ben. Mors 10 peo ‘oe, homes, ay all we patie ilo (pion) ‘Sic ater One ft man enn thats ga fettate te eat flea sours da area ‘er en fr weg ply sn eri ht owe Ateneo te rato oe ae ie ‘id an Slow Tech lion (STI, so mtn 34 1 The yp of train ad: 05, pOS, cnhanoment mor pate Mode mantra ores cot of won tstogrshie, ‘ching eatin, date, inplatati,dfaion ad planation Sep Thee see ae ely read thoughout the pos and {Ropero teal ow han Thi chapter are with de ‘plone tp. Mot prose ne ast dae hie ‘attr nllr tthe dro advo bes, Mal fe COS mamuhtring paces ow btm 2 1 tas How fe the itl Shean o1C maar roca hi cpr ‘Seasons bs aMfOS procs with se ask Steal, base CMOS proces Sow ay examin. Pa dame dite btsen van EMOS geome the Hg Te Tanta mae epatmoon CMOS ro id Mg inthe tale CMOS pon ow Theol he mone dant evo fm the eoretosl sa ae epi The yaad ‘ably of pcan i are npr ae inthe IC marae Tadanty Anni to the eon et cnc te cater 8.2. Lithography in MOS processes “he integration af cei rue tannin oft mecieations o ‘derma th iagt eesary fo 1C want Usa, he Taye ae seen jak. The peeration uch oat(ip san faye npr ola dic SUR USETEEED ENSORON LN 217720/77207 q i ore eee Sater tre sim, se coreatly ros "2 ‘bmi (= 0 ymca! gt) procs ae clined yngge 8 Mae tomato pre: Ai Ci imitations of hse potion Mehography teas ay denn ty the wavlnth (3 of the apo ght sore and Ue Nema ‘Rartare (WAY ofthe ln ‘Th i tine of he ring Pjeton nite yeti nad abo depends he pet {es photrnis Deter ptr lioealmim ate ee 1 genaly d exrensin forthe minim far ie (ns ‘eaten fh ating potion nin tate ite = 8-2 ere comand y he agape oe “Typha wl rb te Decwn 0-4... The mune apertie ge rally rang om 0 to 01. Bar of thaw ala fr 4 hy, ‘ie minimum ta” ur se le plo the meee te eke "he ee ot commonly ht sues merry (He) Sap, whit ni ight at iro neg of te pet. Tie ‘selena 10mm the gn fm fr he bln, Sem {he Hine and 2S forthe Deep UV (DUV} bine Curent 035m tsar ns ae ey ped Hoe (8 4 steppe he he (035m tare rtd on Btn DUVsrpper:Fr ee iam tres ther rer (i) ght ue or akon Bare {ie ght source ca be ud. "The 20S DUY line wl flowed 1 he 18s DUV oe fen agen oie (AF) ad he 1ST ‘DOV fms Sie lar sare Th 0m se 2 ae pp ‘se expecte wo be ed opt th 013 od pal the 0.100 ‘Shimum feta sin Hover, be develope of 800m DUV bay to le fr heat aes ctndng Wo Sth ie, ‘might be pone owe igh VA, iam potion opal ithe hy opt Om ere se awe ered ith dd ‘nk choles (nudge hi a Opel Prin Coe {Soe (OPC) tgs) andrei cgi Ie expected th he {enol pti ithgrapty wil mo ong be ne st str wae ‘ete (2 0 pn), apa taupe mre ean ‘uk wl ome empty aren hw wueegth Are {veg tgs Wl bv to be ery aden Wl tatestie eter fet ough opal ths ith red Stu techn are ot bap et Thi ew the eon inary eng hat he pila ei Atstning Cat om ‘tography will ot be Itodacl ‘mage tte sks ina 07 eco the ty il hae tine cose the ho of the epee strate Nl projection ‘lor Beam therapy, 11 prosniy Xray itogrant, projection {on cgapy an al rete Fstree-DV (EUV) iogapie, B- fase the coe sat ca ge deta dco nf ef the ‘goed tse of hs bak gine oma weld mat woh th ar thts of mans Is ac too expen or sel IC-egn oes‘eyeily for poayping or edatonn purposes, Dine She Weng (DSW) cq ar sl. Sch cue se Bete bea (2 ‘mmc wr a rs io pe ‘eine eter than OT gy bu ta omer coi “Toummars the ule ofthe ne perl 3.1 preente ei eps nit tet ote te are ite) | 2 (ico Eid =~“ "ea alten aging “The potitograpb see ise in the attr of «mask pattern {stra eed ih tg Uy he op ‘Bande (S0,)byor oc the war Satpal tae (SN) ger leapt, Next tiled er scone With ptorse hyer ‘Them bod to sty exe Upto! ae ogi. The tore then deep, we doth reno of teen crf he photo pate. The oui patra he rn tu ata bar nthe abc nie eg we, in which the ‘rec ie rene Fal he rman est ed an imag of he mak ate remain hemi Hye. Tha ‘ede ates ate «bar fra atu proc ep Si or ee comet it tee =— ——— cometh tet ii Ld Pie 4 Pern ane ma ar Both pose ange rit east, ‘The direc in py ot i a ais at ts ang oe ee "Te combination of pattern tami ad prc we epee for allman rue to aati tho 16 type fs cd fo he potter rte may ier om he on eae a iosin te i E = cs os cay pan ig’ Th wea patie ed mpi a pte mag "The pimple, homee, remain the mine. ‘The pocaing sg that fallow ptr ar may mis etch ciation, plato ce ilo ao plating. Destin aah ington posing ‘ep. Thee ep ar decried a detain hello eto 3.3. Btching “The povided pbotlthgraphic ep rode «yt a {tide or alot tris ayer This pater ast pec {un ring dpe oi wderting get by ea ttching pros Ter seve ified etn. Wi ‘rt thing the war emer n'a mel etching Is. Dry (Song sto ay ona of teh psa nd cama pron (ten) eof ema! poco ony (top) The we ching Ithds efoto, te ecg te te amen al ecto ‘The cited "une pole steel ge 3.8) bse ‘eros when the mina newfie ced lager trod Pie Tel rt thing mane Drv-tching nth, which ue lama, alm sistent ching {the eching rose i ited oon ion bythe perpen tenor ef th on el tthe wer sre ‘The el shows in Spare L(y of te mane ptr on the nig ‘With plana thing og, te we ae nr na somtaling rine o ie hat che. Al ad iO, ape ‘Sey Input ching tec, the wer bored by ae ch wage (Se) Aaa oleh sane tthe wae are ‘ipsa dsp. nil; ombinson of pln spate ecg ania soln ci on Behing (RIE). Stator etching rosa ave Ss ot ia i ay Te rod moc emi, pracy and prose cml. So eirey can br inprve by the emp a he gun pa ty the ceton of ple a he wey ae "The ate ofa ‘ts aninozpie proper. Th we of th aaetanc cet 3h er ae to the wal of nar ao pi whith inp tsimaopy teething procs Aeon ange itt erbon ‘ects mi nye tal, comune oe cher acer ‘Be sat oth teing eo Beco, when aed the ching fanart toon, the mcs app itl nal at ‘esl sen, Cat dos mt reat ih li reentry sp, bt ow-peare tig tc gis sol High easy Pls (DP) vec re ad Tn DP, “oer couple into the plan cl tre te aero ‘terns MDP opera tlw (ese mt) Yost. Ths in En‘eruls n Mve plsa densty at 9 highe dae of natn, FHP eo pove harper, ment f eating techn rach se hep etching RIE May ros ep wo plan or ptr ng cee nick arged patch are colle o culing src ail (pe ‘om min) ‘Tew niger com ciel cea le e-store aga aston I Fata te aio astenan sen to pate ee ara Aly 34 ‘Thermal oxidation "The diet a nthe manfcr of dopsbieron CMOS ee et all eer ptt een + big rekon lege + rt son wo oer pons materials «lo df ety (00 able) + gy tobe tnd (One ft mei ha eaporatn mast oft operon ‘on die (80) 1, ab rately diferent pont them ie retin A thn ie an ‘tt beret thik oll lo apace vale sas (acs) ‘7c rom the ara The tke as cet by eng he ‘oso io slat ope ony oe ate vapor at & igh tamper of POO to HRT. Th ye nd wae pout cuca die chong he king io nde a hse {capentre, To flbwing repens cal echt er We Day exiting ii) + Os (aps) —+ 103 (od Wt endaon: Sel) +2140 (pour) + IDs) +2 "he LOCOS (Local Onan Sieve) prose a nition eh ‘he wich hs fd nies cepa In MOS pcs wih te ‘exis down t 05 ye, Sion osetia conan the el force during ie pov, ‘The lingo Se ler end ‘Sone 40 be the egal wae saree sad about 50 above ‘Beat prt aves ty etna of ‘Sout $-10atmeo! A dandaatagh of te LOCOS pros i ewe 3a) ® ‘The min ft bk cae ow gretsch ‘wombat ans Inte earch ore Slat t supra i ak emia be eed i nti jt 01-0 an re of Om. Sah sak {shown in ure 470). cs ih a rupees beak be we of LOCOS i nite to the inition of r.025 jon tare See and LOCOSpenal and nitatons fo fart se dg ube hala ‘One st ets to eapnate the LOCOS daring fran: ‘Pain Eneepuited LOCOS (PE-LOCOS). Another emp isthe {ecaly Saad LOCOS (1S-L0008) whch shows ele i bak onl alte Bel ce honing, by wg al ite ere ‘ling LOCOS volt equ aw chao 5 ‘A impel tes LOCOS eee eda 0.5} CMOS teh, the Shallow Tench ati (97. STL ‘oe dept cts tl en which are eed i he oe wae aie af The we af ST fr depen tangs iad ner thi chapter (toe 383). ‘Aether nortan appaton hema gon oie he ie ayer ete nto ge then: Th ‘at ie mt ‘of high qty and wy vl: Debt such x paola cle ‘ure vest ect on etl pera od rater likin, "The gate ode rege cotiaom sell tation ie "Th gat cde hh wal ering ale 32, whch ete he yar of vole si “Tbe 3.2: Gate nso sealing ome ea tl ur oe =e pean) ‘Te ef deci, gr below abut am thick cage ide dco tunneling aking in crete whch sty coed eed ‘{1Ajem" Atte thin gate, bron oan fr tn free pe i cts pemsartng in gate xe car hl to ‘Shtedoping fhe nae rs elf iin, Moron, tbe cond. ‘iano hinaer gate ce dread canal Soper an ene Jo ton fhe otto rg the ae tral Thi cai eae de lain. Av laf ls, Ut ere doable oe gate mater wil eel fae say epee fe MOS trnstas and doped gate fr OS tua) A i of ‘R&D rar are oie coast th ‘ate ost pn ata al 3.5 Deposition The depo of thin eof dati mae, pbystco et ‘ital a important fe fC production. “The owt fn pita in lay) an example ote depoxion of ti (12. ler of sg cyt atria on tp fig {yt ata (rw). dpa gr he ate at the ster, alld bam pty a ep fr sor ‘nm sapien cate of hata whch te ad {ed snatrate materia ifr (0), pital deposton cated by 1 Chemua Vapoar Depaion (CVD) psn Thi rose da Ing wie vapour phe cats a report oad oc wt ae ‘strate aac they cetng ln a some yr peo Tie epost ron fn hse Novel he ated Sa ened bya CVD proc the oe fx aque of chee ‘eto Hoveey, diferent cel ection can grey be gen Sa of i lan sous The Kydes relotion ft tr ‘Serge SC), fr ply an be repeat me SiC, +28, st + 4m Sera partes deter the growth rate of a, neg he ‘ure otra an deta venereal, igh tmp (CoC) ae br the depts ec the owt rte ‘heme depeot a the operate od th shows Sew he ‘aeons The onal extn or the deptian of pans 3 opour) + 8 ot +2 Hy (ron) ‘This sen ean tbe pce at bower tenpertes, boca Sly de Sump ts Riper rate The cio fect ger daring TO ‘Sumer bso pera by soe fr af CVD prot. Th ot ‘monte dlc mtr ne so hee (803) and onside (S46). Ian Atosptars Promure CVD (APCYD) pics, {hese dept governs, Thi depen ger ‘yout orn por ey coverage sue). APCD ‘Stacy son to dept Boe Phone Cw (RPS) op fal esa fr the teh pti ae (PSG). BPSG lec wich dpe oe op 9 ppt (teen pon ‘St ft metal)” BPG cota boven pert fr 2 ter {in (cred) ofthe ieee ‘The plortar aba ae imprve S10 ad Say ropes LPCVD, SLOG). + 802+ te prouets PECVD: SKOCAML), +0 +80, + trgroducts Tey: asic + Wil > SQN + HCL + oi of VD hv en na ye asi ‘temperate btwn 0 ad TC. Ue econ, the ‘apourpin races re suppem,whle he decepontion ow Sern he ing ta ater op oa ee {elma oly by thal emg. PECVD ie a patra {CVD proce A plats deed be april tnd gu ih ‘cutie, hon none The pan gre yop Plrne te RP el topes, harey renting ee toe ‘rin the dacarge rego 1. The satrone gn not ery {th thy cle with gu nll, tery cing gga (lamas techs andy soto cory cone. an een ‘Ste haps depontn rae ha ater CVD pace Tes cpare the previo econ to dpatting SOs, we se eat ‘ae LPCVD wich oun a igh temperate throes ao Laat SOCatg),) at ow temperate A Sob Atmonherc (GYD (SACVD) prc ears tte sol 70 to IC. ‘Beene of te hgh pore (= 1/2 etna teed owt, the depo gud wl be hig, rutin ia ihe throughput. "Tha frm of CVD article nd oe BPS. eal inp ae depend by eth pal and chic tod, ‘The pha mace ar vapors nd spotting Inthe pattern ‘echt, als arget beh with ron etd ak ‘atin dow fom te tare othe wae rece CD tod (fr camp, yee long CVD recon “Th dice of epson mend iden ya ur of foe itech stp covery he ae iportat. Pig 3k shows 2 ‘rapid luni sep coverage ot cna. Such ep ‘Sree ca ately rent oan 1, ao cunt ‘Mowe, thle marowigecanace wittand igh caret de sto. Caveat demi of = 10° Ae? ar ot except in moder Isteted cet Excanve crest nis In tl hs ese ‘iain, ote a tn el ce {ope nad me clin ae 83.6 Diffusion and ion implantation, in nt apie en m-th ition Dilan eth roe by hich the impaioaze pel ea of ‘he oxi rif th concen he Gar. Dien hin tsp pres "The i sep cle predeptin ad comp the depo of shighenmeattoe oh equa pay Te puri pete ‘meena omer et the ule, grea mperataee Tue TD to 990°C: Astin at he mpi Nw ee de ‘nth the i egrened jan. Sle) te ee D epee hn lilo conn of hn imp in fen?) ol isthe inp cmeteaton ran. As the difioe stony depends on temperate, cach diet it ‘on prom ogi neal alton fr dient ponang n- ‘tions Duri the difision poco, liz slo Inthe te se ‘Sestetatel by pty atoms “The mond sep cll even ifaion, Thi igh tperatare ( ltio-0) sep erence te ares Ipity ronment, bre {he ips dpe no the wl, ets ete Homogueas dk {etn of Ue ius ed tts te dapat. As ra of he Sneed eran fanart pinged oping rl, ios iene a aon pb Ton Implantation Rta pla an So ple, nich camps 2 ream charber tien fom source ha an supply Hsp oboe a for aap. The sion was a pla in teva eh a {Sew rt aad othe ete de Ge nln of ec fan map el "The penton depth nthe ion Ses ‘hn energy The eerie yh med te age Gb on ant ae fh secbeing vogue e ‘esi wih nas patric ees Cat Sly os he areca ed ge an rach teen we Ton Implantation is hate by the allowing our parame: 1 The te oi. Gone thi pape, sere 0 er ‘The mor esol of the en ar mp + The sclrating okay (), whieh vr oa ts ound chien + The creat strength (wih ee eens Ad 1+ The inplsttion darn (0), ie i be oder of Yeas of ccs pr wafer. ‘The tal large Q = It Seemins C ‘ier of tht wl eer te co Typical dae ange from 010 samen? Vatbe V, and an be meted with wry high acura Tie ‘nso plato mich mr erode doping sco than fll fio edna Te win, Val [ean be vd a ‘Soctian oft pod Ire iyo pepo itr nt etek in Th mason pty ein aot Te on implaaton ecniar,homee, an tet slectly rata rr with pea bow te wal sti. Th ors of ‘pun dace ovr tne wae tac neato o> In ptr. Tn plastation cans rious damage (Sod) he {xt tie oft tat Tn on, ony to of te pas {ane opie! on som best. Th be pat doe 0h [te ter‘ rtd dope ata re eel iat a oot operate as dns o eps A sunita sp at tecupestnes baw 90 100PC: rod ern yt ae ‘se hi snming pr east ma ary Che dopo team het tie o he atic te. Tou implantation as exit od feeind poe ental to (OMOS imate. Ie i opera to chon depen togafo the conta of npr rang to 1010 10 atom. The arto npn som yan on oc od = Wan ‘lle and sn ft sure ale te saying mage ‘hiner oly themed lene och th ling peti, ge Sete, Fig 30 Base nt ap of oe pate See: 1) rape of th we oe mpanain ae + he lage tet trogen patina 1 hamelstopimpaation + soc in mation (015.04 tals) + houphp wrth in ifsbe proces we cpl paste, wich eis well rind operators iin cto gin: 40 6 "The we oon plato nh oat of ore aa repos be oes ines lagi ws the janine very shallow ‘el rocmsos The dope omentraton dom tac ich ng Only the esr ising implneaton mt ate ote he ‘tallw jneoms Sesion of suse a dans Dace oe ein hate can penstete trough th shallow jection The ‘ale juntion ting Unite eure ad Gin ae x ae 3.7 Planarisation ‘Thine ith ber roceming ip combi with cae ‘a tare son, ron nan tceaanly ewe urase Tee, ll ‘bales a derpnisos pon vera paaraion pe ‘Theses ate ara’ Un srs Dr the wat prosesng ‘ir Sra $00) emt, he arn wos wh Tei tom sete” Afr th th ews td Cpe), te our ow ue tonsa ed ae erase Sn owas crntng pupori ar hee peed inti, Thee ‘Sng dr ers pto etn att An nas 11506 tha ry al en ry ome, wh, ae ‘ties ea at ot ally, pre gre 0, On oly ‘Sogn (A the rem may pul A ag Sb at cae ta Fig S10: 506 pari ot (tp of al ses (8) ad open ran (C) thence hie ‘rl ean i he all open parts nrg ares (4), Inahing rb probe wh Dae OF Ras (DOF) he ‘gp, In mont von! tral of 025m sade, ey Pater ith ee Chil a “CE nth combi dain ad he imate os ha! ur) ad acto poles he Sco Be ‘Th ary contin posing prices (og leno li) anda stein stance (KOH ov NHGOH (onions) A paling ad (eter wth tn sary plane he war ste, Besos CHP i ‘ito fog rns, afr the stn nd oie ling tec {Gs meson 3.43) aad uring the malin avhand) past of mae tl poss gure 3.12 tows the ane of MP in combination wih STF frm tn igre 3:12 The eo CMP cin nh ST maton (a) ‘tengo te ents sre MUP) nr CHP ater CMD SERS dy rr ons ying "rg. sen ees te eer wii igh Dory Paso (DF) Th rome wo pte ‘hig saooaly wit on depen fei Th oa Sey snl atin he pied ta paar a at eer ste we ik Fe 3.11) shown th ttn Tower we lak a he tl mrs we sree th Aight fh re, cel ding ean Lar open tela ly ith Sey en Se in) An ce ACTIVE nk dw ge hd ate) soe net ay a,‘ Sis ih deny ttn (4) oth wy» bls ah ea CP ah tan ck pith in oon wih ST aA ro “CMP ech ar itt wt ropet oad pation AB Spent ue the pence gts CaaSPure 3:1 Aner CMP, ri! atl sap pd oe ple ‘ti ig yu lq 3.143) show he seation er ee dapoaton om op of 8 ‘eta al pater whieh ona nl bal re Ae hing he remington top ofthe etal gel {bike a he nonmetal aon cen fr set platen gh Te ave Ste 318), whe we ave mmoth py ‘rs! by th ping as at ho mechan pcre Ws cto fdece ts pranetor, wich ype measures 210 "ow coer the une mal patent ne 3.13, at with ‘worl ltd etal ac a more hn rng lf he plan Seton gt Ae cde dation, te eset ks Ke ge SSIs). CHP ne the hi cn Inge np ofthe ae eck ‘ysis. Ara realy ie somiing cide topo eae ‘ak mth ethan on the ange eal ee ue 14). Th ‘ic obln i albmetler tecoegas {red emhfrta ntopo dty d ea ates Rover of uch la rc ack in ve meta mas, {he lta pater wl be onto cee drag expr Figure 18 ‘othe Thirwilyrtalrybeapeciom a orp eters rocnues, ic play estan eo oe mala, oot igure 15: () Oe eption fee MEPALLpteig() Ae (sss GMP, VIA eh so la MEAL? patra lg uote pe eae ap ha So) When po See tare nen a (a) Tb cpt vr il lg elena free3.8 Basic MOS technologies ‘Seto 3.2037 tat MOS proc ily nt fecal Ti ston that are repent. Ta modern CMOS procaus, the tl ‘ber fons eee 1 eal de a ths stn «ti nO pcs With Js 8 mas i ‘ont. A gor underage scat 0S proce nals ‘enna of wae ew step, he C3OS proces ae ft 28 et So af the baie nMOS pros pres ate. A god ing nto both Vehouog pes a preequite wen capac te asag sod Tssatagn of 208 aod CMOS. Fiala mpc CMOS proce raat sod the ao an onda new spe ae ace." mtn oe ‘ia quate dhcunon he ot dominant CMOS eal 38.1 ‘The basi sitcom gate aMOS procese ‘Ax MOS proce whic 8 mee Sie maa xpi ith he Si epee 37 Fine, sv ord grows on the te sbon ar Nex he nian wae ated with ween SN) Inge tbe In ge 1). ‘Te fest mas ote ACTIVE mh whi wel Wo lice mide sa crspeng to abt repos whe tains sould be ‘rma After the aide cd, bon ir ipa tah he ‘eting hk spruce cana! oper, dice sn 14 ‘heated a gue 310), "The wre odie to pred {he LOCOS area in gure 317) The ein he ee ey ita ‘lan that wee not coved iy the wide The case! eoper 1 tae astomabalyproateryrre tenth the LOCOS ene ‘Tir a gene natn of thy LOCOS proce The rv he ‘ein tei rves Ut aes fn wih aso wl be at ‘on Geant se HE ip Thee spe oh “The toa of he ce vai ete 1 nd 2m a watt MOS res. The theeol lag stent nplastaton hich flows {hs toa dasngm te the exe The inplataton te Unreore hice throug thi serif ee ate Low-cogy pary som mach ‘Sf fe) andar oper (Ca) fom te on pater may be ght {and/or man hy the mesa ate oid dng he nplattion, “This etch gate oldest rool ad th ata ee Cadet rowan soe rect, weer, ae ped ‘Erogh the ate oni, eg aurag» tbl age (comet) Implat. ‘The poperi of MOS tranator ze lglyenminad tthe gate ce Gate onto thre oe of hw re ‘rotg wp isthe tee 9 and 1m fe ae 3.2) ‘Aer fh plano ler of that Oo Of coe i egosed. Arent opr dition nto dope the pote ic, filbwed by pholliingraphie and ech sm wich yield Dalal of the tae patra onthe wae Th POLY sa the sod mk sep in he procs an se odie in ptr i ton ey omens oe Se (thin cae ad ua trenmctios pr whet ben ko ie (LOCOS) "The she estane of pate intconoetos os Sewer 90a 38/:Plsizo an ere ly be el ery ‘ore aterm ie rary al). ‘Phorphrar (Po tse (A) ate aly wd to crete the orse sd rin sen Th strata hse on oat ee ‘Stato pollo. The lg ofthe ema are ted y he [ZOCOS an thn plato ate Source od drain nes ae th nt ‘Sued iy ama bt a aligning othe ato fi [ne The nrnp ofthe eo he nc sad dain ro there ‘Kern! Wythe Iara ifn of the soo ad dain ner fate Tin eat of he nr iis bout 00% of Ce ion ‘ep othe rain ad ore “Curent wer dope drainextemionsace ud wich show a erst Aisin of boas 40% of thei depth ee ao wston 283. Wiha “rin xr 0 pth al ifn ony abot 4 Io 1£0a:qen proe, T ele tutor hie hg i be ‘culo the pen wit mina two tbe ter se, "The wai then cnr wits rw eps pone yo {EPCVD step. The ruling SILOX ter inate a Soe 71) out Os Gap th The CONTACT mas the hd ma op inthe procs us to dae tt hf the SILOX ae, Sn Be S17) The ttl ne then dep hy ss of Tape prom, I td ode ibe pen in he suminun ‘oetangtn eeuly, th rong ow complet so Be 3171. Howe, ‘teal tp thc wa scone wi pase ps {eT oi prin a tty elt ‘on ofthe sath protection With al a tp, he each Develo tld ary inthe bonding pa ale abe wing ‘Scnston om the chp ote pre Tha ed Ue sna Poco cewek iin ewe MOS poe flow 1 ACTIVE denon of cv zoe 2 Pow Fron pate die 3 Contacr Seon of ccc ie bnvoen sluniniu at ‘Semerysaine stn pln A-METAL ——_Bteonmine patter detin i alam, ‘ivan Ir, to beable to cnn! Yondng pe ith pcge ae Note: The temperatures wed fr the suc ad dein dfn ‘Strain maton hrf pei an shia e po ‘ux Matdeoun gis hav ao ton sxprincta wth. Home, {hey hove beer ber dsl spl “The scam ate AMOS proc the lowing proper + Sal gcsoarn and ptedenin oelpcapctanes cam by nein planation 4 Thee ncconmction er niin pos al ‘lain Hower, nection of x and pbc nero ‘one ae oe pb rth rs fn ean of ‘Ghar promt hae sm oe rin i _ a es Figure 17: hho ae nMOS poe(Shmuel rote) S9, 0 So, Sean inn 08 an mies ve pars 8.82. The basie Complementary MOS (CMOS) process (CMOS cei and techn are mae comple tas thi MOS ‘nner nation, static CMOS cesta ore ai tee tha te nMOS eat wd cep agra he se ros snr Homer, CMOS cei inte power the ‘Cumplety& ned y toe 1W mao power can se Shh pti page In fat reco atin he ain ‘eso sing CMOS sed of MOS “Doth wgpe nd pipe rsa iterated a CMOS proce. gure. tater the oa sn CMOS pom with el rintuh inv pMOS trator ae hp. “Thi poe Sra cng fo th many sisting CMOS cao "The trie CMOS proc bg withthe an some is ‘Soa ide (SN) then Spt the wa Tha Swed tpn plore lyr. A sua murda rade per nthe Potosi oeonding tase are Ge omest llbe ‘Sete ads ae “Ph died pater eerie wich cm side reminding srauegen ching tcp. The ptr ten comply eon ‘shun i gure 3) LOCOS oe thn rome by xpig Ct ‘ler enna hgh pear Th one il ob gown (eth expe SiN arash LOCOS espa sete tes, Se ure In fra iinton of he rot Inara of LOCOS, ‘Stn wd i depton proces to arparte nti a on text saben). A tw phir ye chen pened ante ‘ope trast ks ar pt dry pte spe. The ‘e's pied tly porphin thes mow ‘ecSMe) isle implant os cle! ato uc bat {iy dic re dcpy daring sree lagh temperate np. A Inger lion the depen on the mar, wh ow conn ‘epee ars witha inl depth of 2pm a ype sobre ‘Peace doping ree eter wtyyeplpsiizen fo bth NOS nd pMOS tuner gino dub reed patie ype ad brie paso or OS aot pMOS tater ten, reper). "re ao statins rere to 3" /p" dal olin "A potltngrapiestp sme sate pleonpatera rece“Th ening platoon ed frst ntonnetonsad ota ‘Sere mask re li he elle sored pata. ‘ine the (0S an pMOS trannies the ate ad el, repetnay The ol sown ne 2.383). "Pat stp in tbecreaton intcnnectons tetee the diferent tears to depen 80, ne on the er Ctc ole ‘re etind a tha Ine oli connection tthe gat, dase ad ‘ours fhe attr Atl ayer endpoint al nrcnmet pattern cred Wy mana of posoltorepe td ching tg. Pigare 3186) sows th nl rel Madere CMOS prone ase 90 to 3) mass Bal, thse po: cone ae alleen ofthe simple CMOS procs drcibd tove ‘VEST ad amcneny pence note hao gt) gi of 013 to (05pm and ofr sera vel of palo adr metal These na Uh etercoatecton yer ltt higher cet dest. Te ee 888 An advanced deep-submicron CMOS process Figure 19: Aa and paren pce ‘Compare to he take CMOS peor acon Yerevan ‘Seaton CMOS poo, whch Ith D5 pan sa Actual, LOCOS i hick SO, that eemally roms betmen the (ei ara Ione, Sali Trench ton (S17) geen ‘sigan ome tps, peri ny arpge a res pestle sec wit a tgiricngratars ssp The ST proce ‘art ih a heal grown ole mi hk etowen ID 9 ‘am. This lle by ne LPCVD depot of L00ee to aid ans (ST as) nl shot tance blow ce Dota of ‘See iden. The iat there cts «eye nae spree dip, hich res In ned Isa dion Cone ‘ty the well ca be cartel ied ad Un separation fem Scars ie wea of hi own ep es, el ue Felons na pel op snc) ra ein) cn e ely nal ‘Thre the mon importa eo applying egal pon. ine "ach wl cn be opinion th ist paranace rboth typeof trainin ede insignia {in capactanes and oy to by nig tp toh (APT) plat Avr motgs bt rina he syns ‘elect th, In ado, th two wale Del ea tines compet ad can be med by ding only snl mk hating the teem Foal other ent santagy of viel {CMOS prc fl by hbase ela property, whch ‘tate the apd attr of dng en om procs geeration tote Sealing erty sete np ‘Optimising ini spel il Sigs degra an (ike Goel ro (ting the) ote ene ‘ned ange digit ev peor) The hour lc, deel in caper 2 only mit ta ve ars aoe mece Hine eurey tha about Sen 28 [owe ad fe the ries ee alone pose cy Shue d= 28cV lu a23V pcos). Cave cn oly nue rch ‘eres ater bt of alison the pic gin Ah ce ‘itis become wey nawow fo Geepmlcon teal, hs "Phe LOD (caper 2) paste a wed in prone of 035 and Inger hep by ne hope ose rn een. ‘Thisour an danoxttion pred nth san wy a th LD. oer th doe (= 8. 108fem')B aboat a eo en hgh than ‘ly oped. at EDD and els ier rete. Tie ‘ae Grnextenson pan ery has etal een inci, wih alley beter conrl thc aha ene {he siete ects Actual, sucha extension act a3 ad lnm In some ene a erator lyon implant ‘cate the dun” Thee the witost Sennen pat, a ele ‘gly Doped Drain (HDD). The pps blo with eee dope SG do i ye ae te Silcide, poles and slices Scab far bythe TS, WS, Cai other met ‘Sleds When, fo emp anim fins dened dey om 8 ‘en he, ee the dton fn ply a the maton {Sse erring sachet ting ste. Tar (sd me ‘erat vst with expend pan (ling in pleie at ‘Surc/aran regu to frm TS sei. A Teo as nie (Tax) ie bem smal om the som se This wil be elt ec a Sibyl ow ie cide op ayer in pation and wute/eanmgns to rtce RC dels by about 1 haere aad ipro ces perrmance Bsn thesia ‘ap sew eel slag! le or also. 21/01 fm ‘iain (1) nein the ota holo ew ids cele tne omtat with the ering ele A ante TN) flere otc, wlan the tap of he PETEOS, beste ‘ipod dice proper. Win the anes bing eed ay ih plan TN anh ay. TT a apne is tener of te snr png AnthRuflctve Coating (ARC) Inthe ra pastern sd coment th anrying metal ser ‘id bao be dao A anim side in oe dept np ‘the total aor dss ar an Anbetr Catng (ARC) To im» highly atvorbent nthe expense wavelength It art mst (78h) ofthe ration tht pena he rit. 1 ao appemee soerng on tpogragiel are.‘Comtact (ent a may procs, partly thn wich inde planation ep, ‘ie koe may vay giant Dep contact hole ih gh ‘pet ate ei spc tenia gana ig of eh ‘Toma nwt pny aed ge) nso caren rome tl paterning ney depntinga meta ier fiw ya dy ting ep etc th malay acorn ‘ak ptr nthe danse ro, pte ae erated Iyengar with et ‘el the pli the ol wating CMP al he poling pod ‘St on te dion Bue 328, =a Zz ie a Parentpaing ee ee a me TTN — Weckngton leech snl a asa Tie toe ‘mien CPt pation igre 3.25 Compu of nwt and dana tl ‘nine Curren amacee patening i ao we, pasty in 28 Slow, ofr tapes wie. In a a damn poco, ge (ead, pins) an wie sve dopo start Tae pret Teac tn dept ofthe pag and etching, Uy tding oning cst The dare Poms eat be wed to pater copper, nich carey canto be he ie ain nae x Seto The copper il et oo sy yoda ie emain o {a aocen with copper ean be pled with CMP wach hat copper ‘al eae the wt teats caer The we of pet {Seed of sani o iemincton a ao rdeton a he ‘Serconorcting inv ty 2500 tention wt the a lowe dtr, te set canbe dubled and the power ns be ed (Copper a an withand higher caren ene dd ato ‘lotro, seo seca 113). 84 Silicon-on insulator CMOS (SOI-CMOS) process Te peut CMOS pst atl ae sy Isat gare 328. The comple lato of (08 and pMOS tears cil with ths promt een te pty of ae Nar the 208 oo pMOS taste came ree om cmpen- ‘ating party dopo. Vry smal by ec sourced {ion the wand pilin pions dor have bottom junctions Comoe, the puruite cpus eich he tha he ‘ie previa CMOS proses Ths ke hv SOLCMOS foes partly stable fr highspeed andor bower cei tye, wre, coach Ge rl evra ata ‘othe with SOLCMOS pconae The alma abetted,fo exam, comps th protection of nt tte Anat {be SD pubs darn per 3 |LSeran Sct etn tea SOK CMOS ren SMOX (Strain y Thiplstation of OX) proce provid leap lteter te nn apy ce 30S-CMOS prow ‘Sheutaiod eyes yer beet te sce of wee wale ‘Th elingdaage te war cst arte cot a {Sremning sa, Te rel town in ge 327, gem 8 » » igre 37: (a) Courant of SIMON maa (SEM pet- (pub a tan ‘SIMOX was re eter wh 810 Ine ete 30a 0.2 ‘Thine dane to rela the conmnornar of mage he wafer mre Fly dit dea can br! by ring the ia othe top ine o0p, forexap,dring proce "sec downto INOX (or SOI) » tha het Inn ft ate chanel re inte rm the maa sy Th "otng byt which ny potas wih crwth by leach trator mat be snmt te th ste sete othe ee rnp rant Wo! ately incon fhe SOI pcs property otal, he Bing ody ec cae bere. Several SO devs have bees preted in tertere [19, Home, SOL chook i el ct ry tre Be ‘ane the yl on sin he ae ot an yy cer 3 Yo (Cif preload, SOL cn bec an lprtan eratine 1% hl alto echo The mondctr indy rca nw ‘groin ines SO [15 ns may be wags oer Duk {CHO Reranch tage CMOS (£1 stm iy eis ‘it digas and RE pats, SOL expected to ar beter ‘franc han bk CMOS techs 1415) SOL mt dvr ‘te sd tthe sane power onmmption, oo sete ae Power {ite te see, Prey 30 elisha ati es Agha, asl and RE prt onthe IC. The ete wil ore ‘ecb ae aly mate Aion a 0 ence ‘errant Rss am CMOS tacks the mate dong ‘emweatoal C308 wil bce to hgh SV ohn “Az exten f SO, Sion On Anything (SOA) echoalogi al ‘wing droped In this wy, "nwa CMOS" preg pe. ‘en on roa ak or epi) sos. Aer proc Being he ae i pide down tere ch gest {ie tt lp ga ler rem The somponet lo he a pide ‘kw clon gas uate Theta of SOA i as led ‘se on gar3.9 Conclusions “Thi chapter proms naay of dierent MOS proce nd thet oom sep The say sents ih a ae COS peo a ronal to smpherdepsumlen CMOS pres With ore than "Tee preening reqimes Sr dfent ype fcc can be (quite divese TAM fr crampl, ea tehology that aloes Sey igh dente: CMOS wai RAN thre ree ihe ‘ifn to -epacn, Thisean bah win oretoae-wl inplataton se Yo minis tr! wl is, te wh campos hen cea ca be integrate. A stated ther, doping) dre dad a ws Filly sal ede diced which fe ae holo requiem. Chapters 9 aod 11 es on hn pga ete {iten conan he otnapes sealing pons 8.10. References cst | tone Mineo actin’ Moun aise on wld sae devs wae V, Addon Wesley, 1s (2) IEEE Trane on cto Deine (3) IEEE Taneton on Seminar Manat Confrence: (4 eerie Elton Device Masing (FEDS) (5) Rarpean Sl tae Device Cf (ESSDERC) “enc and produto prose (6) sat se, eGo Hi, ew er, 1988 (2) 2 Prt, Twin Tub COS” A tology fr VISE cei "EEE IEDM Confrence, 78275, Wang, 980 (ra Sat Se, ‘Moen Semoulator Dove Ps Je Wiley en, 1007| [Po Jam Stats, Brace W. Sait "AICHOLITHOGRAPHY, Scene and Tekoaa ‘areca abe et{inden Maia, Micuentinng nd Moe sion Vl, Meret ‘SPIE Internat Soe oO Regering, 807 1) Digmatar Pramas, “Chalngs fr intra dct’, tare Fa tran 1997 (i). Wotfand aa, 'Slizon Pocenng othe VLSI Hn ‘ohne, Pros Tekanay, Late Prey, 1886 (0t] REM, Roos a, ‘mole of pocket opinion oa aalg perms in dep ‘seicon CMOS, ESSDERC, get of tcl papas, 100 9p 176178 (09 aa Hoa, ‘sats acd prope fr SOL materia, Fare Fab trata, 1987 (| JRE Inman So State Cet Conte 108, ie. Selo: S01 Micopios an Mena, BSC, Diet of Thal Paper, p60. 1 eth $0 rome wth x nen SCC, Diet of Teel ape ear 0 (8) 3 Pet, a, "SO Taeoligy Peirmanc and Moding, TSC, Dig of Tha Papers 198, pp 28-8 1 Dede, ea, "aa Ula on Powee RP Bylo Tico on Gh, IEDM, Dito etal Papers, 07, pp 921.25. 1M. Sterns, Phe Heer Lb Samay 2000 BALL Bxercises 1, Why the farmation of the ae ide a ery important ab a ene proce 2 iy epi th major dence ote the difiin proce td the bimpatation pros. What eth conending vantage nd deat? 2 Wa the pontoon lin ak with 9 ap cog 4, Desi he min diferent he frit f LOCOS sist 5, What the ma dat of aig ere el dein? 6 Why partion ices porta in mode ep eso tchologe 7 Assume thatthe sath metal er 9 025 pn CMOS proce iropdoel Ta whic Sigur would ou ue he wath metal and ‘2 What faethe fata] savantagt) a ng he ‘eth anal bee? 1 We wa copper not er In the snalintion pt of & (CMOS pss? Wat ae the devanage af psn ecg? 10, Wate emt nthe manta depen hip? Why ay ty bended nah ga 1. For which pe of ces wold SOI be partly bene terms of me od poeChapter 4 CMOS circuits 4.1 Introduction Aight exit in the sent tak ap ee midge bre (1108 bore the ading cho for VES cate. Peir th ti cly afew ects wer ded a CMOS. Thor dies ‘see nly ne to analogue ees nod gil aca at dni Jue le pre Example nce chief elon ies ae ‘ent oma CMOS fas th type and pope MOS tsar ‘This ands CMOS prota the most some fall MOS tan ‘only this ment tht CMOS Gets were ore cay than “Te jy crac in pMOS and nMOS traitor re ole and cto rape The moby of hl abut to tne me ‘kan enon moby. Tha males pMOS cele isa awe ta OS crete of eal eip ae The contin ie fr ‘redial cet performance hrf ol to the ly ia Frornge of OS toga The demand Sr hghr png de ‘Se ud pevermoce fd foto ics the comply of OS pric tbe qt fr «ws FD prada (poe delay po sein ee tty on ire natn hd "eco wohape (V0) and diet dept thol vogss (Wp 0) Bon ret og of 20 vols ba to be alae ‘The hel vlogs wee provided the cst nal as Se exten prceaing ep hc ply cated the comple ‘M05 proces aot te el of CMOS poses A a ‘Sem afte CAOS procera ‘oven muutcing prea male pombe to negate i rang comple ete a ven compte tenon ng i “oe reulng oe af amir pe ip fay ach tea fe Tom The sac poner dian can ly ceed tel ‘uth CMOS pres perl ne hl Soa uly + th ofthe poe Sipatl y an aN(O8 ca. eran, EMS chee be beter mise marin. Th vets ceo th eo MOS tr the tran of mon dere VEST Seite ‘Ths inde mario gl al pra mrp Senor, geo athe da teats Gp Sad some ‘Spas On Chi (600) “Th mah CMOS pois nd i haracteritc poet ae SNSITVBios cso eal to saad CMOS cat pe ‘See ore only Dae dagn pine and probleme sited th {S108 meno thin ptr Seer dire of bat ae Sd dnanie CMOS cee ards, Oo a int had ‘Sipe ented was CMOS eats be Screg” Problem. Te ‘bjt isla in dager, gether th dod ting agen Sd ear timing tos” The chapter sds with sctin n CMOS yon eng, A Lt ein tind i by a of a2 rly soul bent hat ny rampart on a lh ‘atom pine Tan ts proce tr sen ef op ity with te cmentona OS pros. adn, py oan {Ostia ae MO5-mot. Crey, mnt rorere we ‘ri CMOS pt, wich sod IOS vat ac be reid with pina petra 4.2 The basie nMOS inverter 42. Introduction Generals, the ce! propetin of a tate MOS cc te st Bly Sermined yi DC tohavoa and ats poe The‘lb expo! with the alo one fhe mn tary MOS ci {aa athe ince, aire showy seat o an inverter at ies yen of Pig 1 An inerrant oped st {tet typer of Ind ements ‘The deta re ban om Semi Se (17) whch ex the unt as trite lowe oer regen: fg = N= ~M Van Wa < VW) Saturation gas lg = IVa? a 2 Vp ¥4) Wher: Me = Vt Vt ‘Twn eterna important whan arming the dts of ‘tis MOS hg ae 1+ Tin locaton ofthe operating pit Tie ae the outa vl se Vand Vg which crept he ge aes Spent Ope rlge Te empl, mut be nae ‘erp’ hth he tl lage yt yp sso ‘en die att, lan arn testa bet Jie eae aap iene coet, Vy rab OS oe ‘ie magn af tout O25V i rally wed.‘ mpi tt HOS O25V in aMOS dea Sn + The teaser reponse. This ply vel othe sand ‘Soe soit wt ag ithe pa ge es In the net ction, che eters ae dase fo be ne pe of iene shows pa 422 The DC behaviour ‘The DC bebo oferta with dine ype fo anes ae ‘pla! spray non wih elo ge 42. This Ste sows Whe reer oir erate = fal gy tet {had ie oh len oa hee i 1. Tsao fe a iw re hectare ofthe ret a ht ‘eeonpu lage ofan ere ow (Vn Yi) ipa aap ‘hg p=) ad io ws The op wea lr open ng to the fren eons ae dtr y We erro of Inet by Vw Viet in Sue 2 The adel pontine we ‘owe br cl a are not piel fi tb aio ad ent. To ft of etn ten ed ln td the river Sharcerte in een by the dig Bue leet el se rroa anes thipt teri yt art aie’ A, which Spanuebwe Airing correct’ lel in wate MOS bg chay ssi 9 ‘inn a tment die an aed so ‘Ti pe kes ethereal ato! ne Saturated enhancement lod tramastor ‘he DC behaviour of a inverter with » matratadeabannmi ud ‘ear icapund wih te a a gre 3, which se chai ‘aga of he eter ‘The kd le aad order ara {eet vale fi li howe i” If — rt wed —L Vir Vin igre 43 Aner nth staat cane! ad rar ‘Te minimum drinsoace lag fhe a anata trl seta a Vay Vn» Vey aba pie Then, he Jind waning operates gn Th sppleaton tema (1.17) Hee te fwing erin Sr he cet the ta rn tv Vas? ‘The DC operation of a nvr wit «strated enhanc ad {eats eee a alle ie 1 Vg the Vo Vie The ev att fg al he toa attr ae F, wl nb teller = Kitaro tnt Ascuing Vi Va a /2€ ViVi se Vik = ME a= Fra? With Va Vi Vi, th nw he faoring erin fi espera Au hi eer: Be, wt ~ Ce « ‘The we ofa mteraad enkanomeat fn tenting ty the motte heal rik prodacr sgh lee, td this only Vy Uy tater than Hy. The comes aay oe Input tag pln on suseqen ge eet lower ‘The ww o's socal eehansonnt or dpm nd ramstae ere th bln ad potas sel 0 Va "The nomssturated enhancement lad transistor ‘ie ng 4we lL ge eri tit et a "Te ge oft kad taste conaced So a exten apy wage Vita of the apy voage Vg. The ext sappy wl age ‘shagh tocar the oe nee sen ser ih nw ‘strated eon, Vg> Var Py "The DC operation of Une aoe eter debe ae lim VR VS Vy fag= Oh ad VeVi Vo + Ve Tie > r= "Th ver wow operate a th rrp. The diver oa = into = i (atv m Aouning Vic Van YR € Ve Vig to Ven Ve Mi ile {he wing expen re ner et rt Up aH Yas Ti Fd te Soc Vie Vip Vn the pect to A expo fs ‘an (D2 y VV HE ry a ‘The we of wna earn an a le {he flowing adn 1M Vie (Va) arg si maa: Pat ie Th mosis ddantage eth eta spp ogee Win (ig 2 aa Vi), meh may mecoitate an eta pn on the ip ange AeratnVg ci be deol peered on the cip. ‘Tero totappel lee hows gue Figure The totaal nce ‘Toe DC operation ofthe botstapped ine expla we ows Wa = Vi the Y= Wa Vi ‘erp apace C thre chr. + Wa stb tonto Vis the Va ners by Aa, Sh imac y BU. "The mgt of A deer (rhe wlen of he Boca epatans Cand the pre ‘rans Cur sich at ary. Th MOS ‘bot oem OG‘This mmam tha metinely pases the Vu-Vy lea and teaser Ty, there ao ope eons The wolfe Vi ean {hen farther ince ta volage eater than Yq The ‘al fo detrd Wytecapcane te oe TGs ae so a price 2 HG at it Vachon > ty. BY, = a Y= Va ~ Vg + 0 Aa ‘Te ad rnin Tm oman thea peating rep. ‘The folowing equation rere apple Miva > tae Vag Vig Vi, 4: Bie > Va og > Ma roy en Yagi, ad the gate velge ote asitor {T,BVa)- y= Vag Loud amir, terete operat {athe stration region whe Vg The spect sal A of {he Boourapped vr thre aia ta gn apatite verter stad ean ad ‘The bonstrppd eet the fllwing ata 1. Thee ao thekld when the boos epee Cie conretly diese 2, There no xen supply wt ued ‘Tho depletion load transistor ‘The mance of dpetion trainee an extra mask (D1) {dada procinng ep Thre ar however, couirabenan- {age acl with th i of depletion asco aad hea ‘Twice the lio + The oupat high lon Vas eV + The bo exe ugly vlage reel, + Cheat compost inn and botstaplng unter 1 Nao my a ih Forth esos, mast nMOS res 8/0 tech ad an {ain bth easement od depos tir. Soe marae ‘ef depo ries thee CMOS ttl Figur 6 shows ae nvertor with depletion ad aie Ya ane Figure 8 An ner nh dpe dtr ‘The DC operation of the iverer with depletion nd anistare Ahern lows + Tie dpition lat tain ha 9 nei ttl vag + When i= Yr > Hy th Vi st pe OV) < Vawhl the der ano peat in thet xb Banting (heer inte ld we ent ay = tan = Cin: 80 (tatty!) toe Oa Bt 10 3h Vp — Vy he he npc atin Af he depen aad tise wean oe a (Pe, vat A hy, 2a Pd wo ESL cist may com of milo of gets which ay disse ose than Oto Tp enc A sup lag of 28 tee ‘egies a itv ad of eel MD per ge ate. Hoh an an Praca havea net reas of abot 20/0. Ration of = 5M wisn 0.25) wide pollo ta eee eqs ‘tenth of 25mm At the cot xa proms opel wee pr reicancs cn beefed on mal apart, eos ‘meas RANG), th dledrantage fee ronsing ae uid Uy vy rp poston quate (bin MDA i 105 ‘Th ation of» second olson Iyer with wey highest In {Eat ae comely mer than the ful OMOS cle, "The eof "iv a mete ane ay ie appeation a aie ‘Semor od sot noma coord in VISE csi Pigment ith aan ot od eon Figure AT An inert with it at ‘Te DC operation fh sone vet eid fs “Wt Vg = i tha Ha + Win ig = Vt > Hap hon Vani Th ie tao is ‘bem aprting in the a ei Eating the are the Ascusig Vo Va — Vi, ye the loin xpresion fe the pn ea A of tn dine tas As Werte a 423 The transient response ‘Teeonput fle uerndigta MOS cite re nde by tron: ‘cn wake an bythe ge ofthe MOS teamutre Te stat [is teve le pre ceca: ets bavi oO eit en hrf imply bo represen by the eng ie re oops, Se 0 ai ple deine ‘aoc pated tote ep tear fs lp gt nie the Joc eapactance of tren reese ore andor dan Dr funclons. These eases and gate eapacstancs af MOS ‘spacitanesaveaammed tobe coatant. Forme (117) ste tensed {2'dsiedieasning fre which spt ote ane epee 08 ine th ise tp loa The caring ae civ hd tog ach oft od lament gare ee Sie Sey te tring erste hah 9 iver nth ites perf ments concn tn‘Charging capncltance through saturated enhancement tran- Pure 8 teagan © which crea hvagh «strc ge c igre 8 Copa caring trough nase canst a ‘The volgen the charge capacitor nV and caret that carpe ‘he caper oa thn caer cre rom the slo ofthis deal quit, de lowing ca be de ‘ed Sr nth V = 06 Vay Ve = D1 Vy, Tq = OPV perracn = tuamewe ante us ‘This eto caalates the ogi hagas 4 capranee © Ina ime € 10 a wage bel oa to O8¥ ‘Charging a capuitanc through « nomsatrated enhancement Pig 4. show acapacanee Cha charg though mstiratd ‘basta! ante, x Vie ce Pure 19 Capactor rie toh 9 nana abort ‘ive ae Srey gating he cha even en ator og ate CME Wg Ve Van ‘A boundary conto of thi eet equation i V = Vt = 0. ‘Te slain yl the flowing expan fate an ator 0 ‘evetrsed esos trate sbi wil ear! apctatce (Cte Y= DIY tows V = 09 Yate #(VE 02 Y be A. fo Vg = 1A Va Charing a capuctance through depletion transitor Feeder gh tin-l ig 410 Cpr caring rg don ane + cane heh 9 dept oir ci mo Winey te Vor > te ‘wet yolog aro he capac ie oa sokage Ve VirVortlt (beet) 2 For volag aor Vi tbe epee C wil be fare chars "Wuhan itr a hse eo rego af pean wo ils eatin hae to be sed With Vom Ygg Fy = “DA Vg and = 08 iy the aces an tet Cs) Pipe 1 hows cpastanon C, which ease! hough rar fe ‘Asta the previo ey the charg cura nthe cret trough the sor ar equated lone wR, “hi eation at olin tie whan =O Wi ad ast att oy Discharging « capacitance ‘The dvr trams whith dchages he ence output Hod of fe sMOS leer alnas ofthe eabancomct ype Foramloe hat “bse thie diane he ded with hn fue 432 Th ‘ipl chaste shows hd capac C, whe died ‘Brough deer mato om wwtfio be Figure 1 Cyaan tng a nace rani 8 ie 0 ig ped te fe i Tere Roa naar ter phar eee ark Wnamewoamantusrn cay nents ‘in nr mat ap ea et iene tne Tee wo ks a‘Comparnon ofthe diferent types of nMOS inverters NMOS ives with difeent ad eet ce ow compared this ‘mpacr, the crn which ows nto lad lst t=O ‘i fo te iret ete pe 1 fod ee el Io= Bein — Vi Ve? 2: Nene nc an ane Yer Yarn, Be itv ae) 4 Depletion a alata: See 5, Banos die stor dca (eter when = 0) Vag? “The towing pie vs te wo poe quate compa lem ft aria yes of 208 eee Nge25¥, We02SV lye pA nad fom200,A/0% Ie transitor™YgeSBY, VrgmSU, Vrp=Q6V, ph y= BV ‘ee depion ad rast “Adolng pF ted capecianc,» cat amie ogame act alse the sharing sa Sharing career hat co ‘pond thse a abd debe nie, peti. The caring hare cid withthe al race a lo saad {The eae a shows in gare 3 vives} ay igure 12: Chagas of 0 nt nt igs 3 stows ta the vsti an the dept lad perm ‘afr eit aren, Ching ugh sted ‘theo nl rans Cary wry en ado, he a {So tcc wl tne hl rnd yl igh Sel T= Va. However, this pe fc wr thant ‘kp dic, a tinal iatage tod 8 fra up vlage go boosting. 4244 Transforming @ loge funtion into an nMOS tran- An inverter i trai int eg ae by eli he ver a ‘Story scons of MOS tansstor, The combat ay am fic sr lor para mata ach rn ue contra [legen A complex bento an het eimpletad see ihn met dT 1. An AND fonction is eae by a erie conection otras. 2 Aw OM funtion eal bya ple omection af trainsec gi ae aan ato of the as rr, he opt aa ge the ae he futon tht ced ie th ‘et i eer tin npn wing i hme ORNOT fined Beample: A ll der deity the wing og Sanetne (ee abo meton 735: Grsnesetes Symbols: andy reset tw Be which mut be ad. Syme = ‘ots the uy worst he Many m= yaad ‘ile C epee the are ‘The ge ton Scan De wien (2499) +707 +52) "This action oenpond to the implementation in ge 14, wich ‘als th nese (8) ofthe sm fet, Yu Figure A: Ae impentin acin Figure 416 stows elton oft cry tn. ig 15: Impl ft al erie re fi ‘Ax MOS tates gin ctr 9 oa ff. The ln tie ‘nao aia cna in cn expe allo "Th daca tine commas seit wich he ratios he ity groportinal to Tact the ed ofa ge ate aly ‘hermit by the se of raises nt omc {he der ation I tha genralyeviabl tole ths mame to's minimum. Fgie 10 for xanpe tows 4 RAND ge with 2 ‘ier trary "The tie) rt of he re Senge to Dea! ‘he (aspect rai fhe drivetrain apne cab Cult ing the frase nets 422 we 423. Tors MAND ete ‘rh inputs th avert de esis (D) mtb ep =teamins ah hav a pct ai (9), ber Wy ands he ‘Phaeton nei ee tn eet form ack c ett CT. 1 igure 16: AND ue itn ut aha ri rs ‘The mb of pr ction in ope gt alo tea imple Sa etc eb pt pe ‘San. Tl cam an incre fn the i poeta dele "This con prot oer the lt! dng of 0S site te the eton of base aOS logon A mae aan {age of alOS igs the amocatad power cnn Each Inge [pest nl a outpaces DC per Thar eve ‘rea e MOS chip bs no ial sins te DDC power tomtom CMOS ect, ue mare ole ‘ecg than MOS cet ont conse DC omer who the oat. This mnt nortan omen rt domino of (CH0$ ca the tga eel mat 4.3 Electrical design of CMOS circuits 4. Introduction ‘The acon CMOS sams for Compenestary Metal ide Sesion Ato "Te wird "wompkenenary” cat Wt acts of ‘retype can be sated in CMOS proces, The es a ‘chan and p chao rn ap MOS” The nMOS tanstoe {ais operation Bae ten ete tated br. The pS re ‘Stor ha be iy setnna Were hear, sional eae ‘Sout eoperton ae pried io hiclapan” Ti oMOS ad pO {Ets an COS proses ae oth of the ean 7p Sreon 17 rere Oath hes welt af the nNOS nator {ere ponte what of te pMOS asia enti Tine shows a Ege “Te firmne ded in nton 15, hich der the bc ine ft tebe hel yng of MOS wd EOS amon aa lee Veet KaVTEFTR (eabacomeat type, >, Ke > 0) Vey =Mag RY FEATB ote pe, Hy <0) {8 CMOS proc tha cond ath etn, the pMOS tas ‘Stor iinterted a e etge Vn te sbve xpein Se Sera ag yo MOS tate pm age "The ahow exons and iar Haw thatthe option ofthe MOS tite he nat comple of wb wer op ‘ation The dicta! peti ofthe 0S aod pO tractor‘a be summarad w alon: the pMOS tant’ bbsvone with ‘ptt be spp age etl othe afOS tir be 432 The CMOS inverter ‘A tase CMOS tere omits af an MOS ttre 9 OS frame conned show inHg 18 The wel sre 8 8 ‘inte the pOS tenor, I frm byte iar on Iplasntontecniue Sucmoed in caper igi 18 Tamer nm # CMOS eee gure 10 shows he cat dara of « CMOS ise Pus 49% Chet digum f COS ine ‘he fae subtate oagn om the he wakagy of ate ‘tore tected ln scan Lo The ela Vck tee Propurtonal the eae rot of cha dpe othe aster sd ia see Ko, Tho Kft of he pMOS tran tee fn netrrade ein wll proce be lh se oe hs ‘The pertemanc th pMOS transistor ampere y the my ky whch pent woo fu saw he tity af dco ‘This has oe flowing vstonstip betes the i co ek 8 ei etn ed Bog 3 Pop Fore abi hell voltage val, the MOS tania the Ino fan ivrtr with apminoti bin nl haee be abont ime he ab tbe nMOS eri Ti sara expo (eat rat A the CMOS ete a ows (®), “ee an) rmany poco polio ara a the sures and dane of ‘lang thepHOS amass wep rere ald bela ft ewe 618 that and aes ay never be ict cometed nthe [ACTIVE ms, tick dng. Soh romeo Many CMOS groqmus crest Indie ook dnened palo {edtalop plano plc at fr tho OS trator ‘ap pba eth pOS trast “The electri babaviowr of 1 CMOS inverter th MOS an mi CMOS era ae athe ‘eter a Va) The pts af th pMOS (Ty) and M08 (Ty) vember hat yd 20 ‘The tamer arnt expla lowTai and T, ee eV, "The att rage Vo he in Va 1 ad Ty ofr Vaan, i both f the above stale sitnsion, one nse aba‘ and 1 DC een an Bw fon spy round: Th cur arnt. ic = 71a) gu 4b ote thi tT aaron of DE ‘evn ia be to eae station the nt ipa eae of {0S we erred OA re Soe sy ‘cation a : Vin VepWite ie. Vous Vn—Wra- Thi i the area abowe 4. 1 (he dt in Vag=Va- yi he tran character 5 t Ty Waly < Vor Vig, VoeVi Ve-Vor-Vi, Tht ar [te loth dtl ie Vag hn wr caret * Mw il Ye % avg Mala » Fy 4 Ti at 9) ade arti) Figure £20 sows tha the transite ia iver ae oth sn ‘nid ding tations betes pie ees. Trl br ontpt Impedance thn iit Appleton of Obs La roves an ieee th he eto infil re change athe ottola. Ia practic the ouput impedes we awa aie athe ‘uct lag cane Lite. oer, tent ratte (ine CMOS aver ol wry sp emus be not hat fia 20 eet ai of te tap oar that Vz==Va, atid Vg>V 405, The rede should ely (Sat etn chalcone Gass he Wiel Ya ‘The hargag and dcharsog behaviour of CMOS irre an ao Uedonrbe iy mona heat ers = Vg) wm in Spe 2. Ths characteris obtain pale Ugh te ‘al eno Oo appl a th vert Ip Capaans © ‘tte adcapacune pet te tanto utp Tee crea ‘Soh ths pOS a 28008 ae yy, eps + Vor gue 42; Sate CMOS cee “he cuvesin ee 42a enpli ilws Tajptry 1+ fy Hine 0 pa he Vi rom Va 0 Va ‘ejay It: C care to Vandy dace ‘rjestay IL: Ip ic oO Ta wan eine ro V9 retary IV: C dng wo Vy hd dae 10 In gure 42, au that the ade sf the 2X08 an MOS tants ae el The cect arco sr thee Samia with ptt Fn = Ha Designing « CMOS invertor ‘A trae CMOS ogi ate contains a pMOS transite fr evry AMOS {amino A pend alOS wenn, bower cr at ont pall { pMOS tape wth tate ected to grou Her. « DC ‘Sen ts om spp to rat hon th ott ow Th a entry brow fe rie trae CMOS cea enaree {heave of DO suet at bot lw ne lagh eae spertng fn Tin ype of CMOS hp here aia te lage Tiyan Yala with the repecve “gh a ow tpt bree ‘npn of th tai ins I fot Ty se te sepals ‘Siege Fy wie Vans OV. The dyn ingen i anaes tna ge 4s toe in gue 42, the dye cage carters aed ‘he the aut ep ag al es Yq to Vn Oo 1 ee © Me iu 42: Dicker apace og a OS a ‘Te compleentry hebvoarf the OS and aMOS site po- ‘hice dng nd dicing acters wh are isla the ‘rif OS neti 423. The ton al ct sh dee ‘om ae exon rt gle tar an OS rarer we Telage nitrate Vy appl oa pte t=. The ala ‘Spy repent ere can) ‘The rose dimension fhe MOS trator ae aby ae Ing th gl tor to fy A, whee Ap, Uo pect a of {he usr and ea (Wj Brena tcnorer e e ‘ied chapter? yd hoe Ay dace as coe caelgen he cn, th ela val of Wet bred a operon othe dea Eeampte Given: 0.5m CMOS procs with oy 20HA/V Probleme termi the tpt rao Ayo a aMOS trite Ty ‘hich il dcr nd eapecstance 100° fom Vg to 01 Vay J Inthe ella Vg ie api oi ate Sotatios Stauttng (1) yl 4m. gating to Boer, aod ting Ae pA ye Because of cnr eft (Spte 2), which are no ind in ‘hotplate, th att cyl of Wssre ns 025m CMOS proce uc by abot slo of 2 Tie seu a he ei (F) fr tbe abOS ete mat be ("8 Ya ta edn, moot < Tr, gue 2% chp a stn mg NOS tne The sag leptin nd OS er ‘Shr There rt paar 08 th ‘rare a cagnlane Crom OV owt V 09 Ya in oe sn gt og ll om Vg to OV in Oat here Sly eine by he ase tn (13, Problem: Determine the wpe rio yf pMOS train Ty ‘ich wil rg td capes C fom DV to 9 Vy in ‘Bien OV apd ote pte ‘Sotulon Th potion the compleent ofthe peo emp ‘ours thn allowing epreion spi (xe atin 41) ‘The ls al tf bu deus mst be oa, The ete ‘ot thie we the evicted ale abot 3 Sr the ‘pet rato A eproned in rma (C1). Tor CMOS lage, however, falar of 1 to 2 re carey a. Lager aes ape [MOS traits and a oe hb epee pred 0 vows age glen CMOS eee lle th ere, tre (jana (i fron (41) ae the ect asic ap to ‘le nmin he pata cone sept. Te iene ‘he tans se wd at a fr A opin Dissipation of « CMOS inverter using the st wo cd, CMOS ecology ha cme the mat Samia tchlgy for VISI ca The od impett an ‘Get row tate poner cnmumptoe. Ths i eine of the ate af DC caret ding prods ive no silanes 0c ate CMOS chek, Hover a shrtchent caret Bowe fo ‘only fo penad when a chge slog cepa woage ce ‘Be utp slag Vu to change, hi abr caret Ia fo we diate 12 "Te ome lpn tse CMOS iets explain with be sid of pun 424igre 426 Cet ugh a und rar Only te n\OS tnator codes when tb pit vag Va hit State CMOS ure high (Vg) Shay ony tb pOS tant xan inp ete Vi ow (i). There, haere ‘Scrooge power when he pt the of he bore sae ice Hower, dings onset te lap thee ia psd wen ath te Band OS traits omc A tcl crt ties ws Eun supply to ground whl he tpt wllage 3 bere Vis and Ye Vl Thin cet I sown gure 120 Tf ead ‘Maco, cheese’ hirer outset ian oa of eo mp 1, Dyaunie por dsipaton A vey fay 2, Shree ame dsipstion B= le V au athe abe oquatonsf (= 1/7) the fancy at whi ee wag Sharge Vous on CS he seagy ote cure ‘Gary; te dye soonest Penden of vast der ‘spun re gn i expend in inn 1 a ‘aun the ai ac 428 ene Figure 125: Capa aod crn cpctce Capacitance ing dca vin itor with aoe Mya ‘a eapectly. Desig casing, the pow data fn ie [tio rae winien =F Te in hit nates mohow hy i tendon of. Snr, the por dgation Pe, ‘ing charging ndepenot of the vl Oy abd sho oe evin “Tetot power Paupplind by thet scarce ving compete cargnge eee mth um of Phy and Fy ta nV Tae [Pop pet wean the tl pwr dapsone peowesy = sme ‘hic dyke pour dpaton appari al peso log ung tle MOS cet, bipolar eat, TTL ent, te Te sheet compet Fy however, proposal ran or des doen he in he nd eae. Ab ‘sprain on maa (114) deed on th eptin at ‘he rtrd apace es 1 Aongh a aye Inverter wt eda diet, te verte a seo Uwe Ts ee th fing quo ap =A =8 eed Va, = HH, =U Duving the pei tot In Aig £24, tbe short iene ere 7 ‘ates Olan Thought th pad the tp aleageVn mere hn rol tag Vy, le tha he net wag VE Tue aO$ trate tie ere ne appeation oe ‘ple MOS fre (13) yk abwing nen of ang ‘Siero of tine 1 Bove ti) 0S 1taw ‘Testy of theinwerter produc atime aloe Fw Yin tse Vn) in itn, the caret train rng the peed to {a rpmietial wih rept tthe nth tn re Fr, (he thei cre whic ows daa oe eye pnd T the ‘Spang cn ers be exec lon Af ma-$ f'foun-vorw aan ‘aetna sn nena (lost sada ina oa 07. "The ae Vy ton ‘ttn daring age hrf xp ew Sting te exresins fo Vital ty n equation (415) ate ae ‘ho slo ois oqatin te cs tas Stating thi exesin ft uae tfxa (1) ple th oh apt: ar 2¥09F eee uw Femala (416 cotta that h str diipaton po ‘ata tothe ene Sorte cly dn puter tht oft Pre San the ie ll {is (7) herp sgn Foran eter th capac Sen the traitor valentin by hed tp ‘id im Tn hee, the sort pation oly depends (the ept sga is l ines td pce. he 12 pasate ae eat ck ais ie age Brine Tn th chaptr on lope dg (chapter 8), the CMOS pone outils a dae! extent Howe, Un dig of ge ‘pe cet nce th oct oe CMOS ce dg MOS base design Large cpaitanca nmocinewith integrated iets hn ee satel ty bow nan fp’ creat hve cpatanss ma {en bedi a igh eee. The reel bul ving eee linge a ately le pt fhe al ower onset 9p. ‘psig thse brs tee rele ceri more ef han ‘happen ade fr CMOS lope: Fran (416) sows ta shor ‘len inpatient poprtinal to th ine dal ie (7) ‘fan apt ial Tho pu signin of ues wih debs ie co ‘ned toe ss ore b-atso hip tat hecre ve parcel srt and fal ie Supp the gal on bar ne with cpactane Cy, mas ie 3 signal a the outpt nae Ao lp ate which capable of hargiog ‘ed aitgingw aprtnca pin bs Aa ert cain ch ‘hat gue 46 can be ad bur cat ets de 1sA & . fous 5] Toes] ow soteral fr Gee chad Lites. om! tithe Gyn panic up decapcae Figue 426: A tar det amp einer cai ‘rom frm (18), clear ht the is an il tino ach ES teen rvs in erate tat init diipnton can be med ‘re the an fl ans cach a ths apt ae lo Fie el tin the front. The er chain at hee Seek nan i ioe th ‘opueton day tfc the blr and ene "aperng ‘itr beeees the of scceniv ees ith ase of eu pit Intro inp a stleo re, owe, hs wll lend to an option eng. Doig optintin fr mii Si ‘Shatin don aren requis eee speech 2 sla proce by ag ate and mt be bred 9 deve & Capacive lad C= pf The regu tc andl ie + at the er oat ta The chanel int both the pMOS ae the ‘MOS trate 0:25 jm. By = 2404/0 an p= BORAT "Teds poet i is: Dee ly of he at ier acting oe (2) Pou BRIEF = 810-8 ayv? $F f= Aya Bs 200A) ends () = 29 1 Te sede cs (ga 2) ist het {eho wai ct eagiA speesatinns (2) fn (Seta mich on i Char 2 ‘fet For = yan CMOS pay, hm son ct ‘yr he ort pbb nara hw ost rr te ried tnt wat toh 8 (Be = aude todo te + Demin ih aig tr the ni Fi tea) she re ieee ee i ela Penge nd wth te reed (2) yr Sein so upeing 28 L meet we Far 4% oo ie ih te in ct, i+ Tha perfomanos of hive in can egret be ‘aca omer dinpation.popaation dey, ina arent eee wre we (8) Ss he smite oo ‘eat apn et AlLapits ig come oa egal og gte with he ‘meet rai the it Sore feet and 2). ‘The diagram swe tepals) he supply eet Ung) td he outs Voy). Detail owe so hs ei ar gin aie "Te Al: Comparion ere hin fie ith ie taping acon Taping te Bash ‘umber of vere ella tot poe inte) ane | at | =e ts | in | 1 roa § (lave) wos | a (sce) ante | rer [aio | taf) epagaoe dey (tte) | 96 | “oat | aiait) | se | as | ae | jo ‘he tapering cto (ce to 25), whch eri a erate [it ace minum rgpsgnion daly re very bly with ‘spc tothe masinan fan fhe hea A he mah lea otf ea wry important Sue that dts oe ‘Sor 9s ea on tpl bt ito deter Jae the ean oom rm th tae we neon (hae deat wh tapring acter of ys opts ee permance Tn summary onal cet penance (pone, do Uy, ate, tae whan » CMOS bar opt fe Sanimam pore dxpaton rate Sh for ont preps ‘on dey Geely pnb taping actors etn 816 ‘Toe masini amp of mie geal that canbe miprinowd ‘nal nodes of sg verter chain without cong the tt ge a change eel mae marge 129 shows the amr "Te cn mpfr both igh an ow velar ery lage bra {he at retangult tape thw ane sarcaratic, Fo fhe ‘year et, with fom a=W th tl eye ‘seq eth hl OF era, mt wey eter pre. ter the diane oly gar righ sey iveroneal, he lowing oan aploe Noemi 2 042: Ya fan We Wan tar Ye Pg 429: CMOS in rif drt spc 44 Digital CMOS circuits Istroduction (CMS creat can be pleat i stato dye versons. The ‘Sots emily Steed bythe pe of eet at appt. ‘Tew import oes which ft he ear chip mena per dst ‘The difiescn betwen hae tne the ‘pmo implementation ar td a hse. 442 Static CMOS circuits loge faction in static CMOS stephen both 208 tel pO nmi Aa aMfOS eon ely tenet ISHS trust A single! ansehen dt cars the ‘hpat Tiel asi a oats nha he tp ow” A ‘Stren therefrom py tid a ens dition ‘ete ep aan af0S le gas ow Ina CMOS ge, ‘rent cy es betwen py a round duiagostpu tas ewe 430 sms se state CMOS imgleattns of ee st ‘ac-bieconoctin or both te MOS a th LOS reas ‘Sige Vand Vo eth OV. Te fcr tne we Ina sbom in fg 00), 43 al alleen Unhoe Cir ste, vlage re edt be Va oe "M08 tans ad Vay the 08 tastes 4300) ‘Cn oO a OS st esis Vor Vg. ‘Te bn ft bonnets on MOS ‘51 pMOB tains wb wr ot comme 6 sda ‘eet. Ths pricy toe wi he sore sed 4, 2, (9 TRVERT: 2d) NANDiew (@ NoRe-a5 igre 130% Bape oat CMOS lg ee a gonral secs cnmeton ftir in he M0 wction of (CMOS ai ae wil ree psa omni of reas theMOS wetion aad vie vek_‘Thi ae a fie 4, whi ‘howe at tramp of tase CMOS tepeoentatin of empn ae ‘sorbet seule ge te inga Figure 431; expe af mie compe sete CMOS ae te ‘The pero pMOS trast ie considerably poo tha th 1 CMOS logs ate sbi herr be mimi I th ser be Som very ig thon, ely a exept eassca pden OS Inet ewe igre 23 a eample of pndo-eMOS inplemetaton othe {0S quien gare 43. "The pect 08 meson ent toiten\OS consteprt asp hatte MOS lect pao tps MOS trator mith ues Va Bath MOS sn ‘etralO$ loge pues hve the aaage oh sew pe ‘Spuctann, Th output ie Geof penis lege pt temied y cly soe p.MOS taps a hol thre be sh. [dimcvtage osc agua the nate power dition ws the ‘utpat ilo The type of ge at ther bed psy. ‘The outpt bw lan marine ae daa by the ai of (he wit ofthe shMOS nad pBOS ter. Paco sMOS le {ieee alo a form of ito! lg, a dicted in con 2.2 igure 152 A pe a0 ete ‘The CMOS transmission gate (pase ramitor) Pure 433 stow anon ate comprising omplemtary pr ‘eamtos Ths ahora ompenent In bsk watt dy ‘ie eat I wd col traf hg ees Gn one deo anoser when i ota signa re acta. Ange nMOS (Rhnetoentnisr canto be wef pee! fen, (pee Soham mplonentain he none onl ipl bu Sad ‘ge! by thle The hel vols hn raiser ny Urry high esse ft boy ect te the ins sh Spat loveless tel volage bow he conte! wl Tee ‘Siemon, che CMOS implementation eco ge Te t Ts ou 28 Figure 3: CMOS ranma ue 1 the gir of the sMOS trans in the CMOS taminon pte ‘otal! ty a sgl the ate th pMOS trata tbe oe tela bythe empientay sal f. When te fp volag eV‘$e, th oat wil be dared 4 OV. The compe tay behaiour of Ue pBOS ter eae that Coup ele S825 when he put wt 25 amd 3 ow ‘tang and charge aractrtis of» CHOS tannin us Te MOS td EMS transis pewe heed har the utp ow Se hg lel, eect 5) |i alt Figure 4H CMOS vanities ‘citi of the hfs no gOS tems ote cg ad (sce eine Pastrana loge In tate OMOS celts amon ste we wed In ee ir {hppa ge xan of yi ge re ‘ctiate OR (EXOM) lp ates ad mule Pigeons tear le implementations ofan EXO gate" The OS {Exmmison pce phn n Sie 433) aang ph thre a rvlting ow ei. The componente Se mensions gre 4355) sssbrter ne deat Se xp [ae cip rn. We conan the spa of he ate th let (to cso p MOS hs), tate CMOS log fiy Ieee gue 8.19). The hell yas sone the SOS pa {ei competed bythe el string pay the ch amos ccMmos Tiabeab Figure £35: Parser ge inp of EXOR oe ‘ech (a5 ps eam) CMOS parame ue A eral daacag of pe emir lop arsed nfge 4.3 {Ts retane Breen he ip and @ andthe Opt ‘The charging oe dicharing of al he op though he pe {eas sune ion aly Ot tg ae he ed Sr complanesary contra ign The pote of pe rate Inge cheng the catia the dens Sev aerate ae ‘en ped, The re laced etal ith ome cager ‘ogni tract ad aang. lly ci noms anplmet with passa gi mat te simul to prevent erp perme dado et ‘remus eho cn by ofl ach an care sbi Goto {Gy Wit decsng vag in urn ad te pons te po furan strait en to do wth po tana Sle CMOS be ‘Thos, the pertaor neste 2 pa ‘etmtr lg expected to reas the aming yas. Th re CMOS le dred sae ab ted bot sryacon Chie ad gchar xs cle Te te peo ce tee tebe the nex sci44.1 Clocked static CMOS circuits Sal which ow tough dee pk in cmp gi iat i "pple hough te cel gral io ane at ‘tem impale to haw which sal an be epee ge node Containg edn Sw ide x cit ere ei ssh: sino af te sige Uy ths one by opting te een ath spat wih rm dey." hme Sey wer ‘se day th og dla ripe. Tn xara tte MOS, the ‘Sb ar spat by mea of tc ado pop whic SEMA ST ate Arnal dia So dune ‘ate may be sotralt ynhing fh coc ale In eery pe oe Stati aches and Sip-slope atch apd pope an enperry storage of zal Fig ‘Sion gate The tani uc oe band ie am egal Fa of th ty a pre vo cep ier Cpe ‘airy lp me canbe witon ao thc a he ron ft wh he cock sgl high, Le. when @ = 1 and § =O. Fol ‘ek ee th ovr tat the alma bed we = Oa B= L Tht pipe ed i eae ILCMOS may elit ip pg an CA C aos iar 436: CMOS eich Apso can temporary str a od contol yon a mae lok sats Te mucin do tegvney fa dd tate CMOS ‘hei eter yh wast case elapse wo pop. ‘Tiszh then poprain dey ns ro of cman age ats sero sgl raha with ge cpa Te the sv inpetati f ate CMOS Mage, The dcmone Ilona Heit olen fra of yp pope 1 Deg lipo ca be ity omit tn erin ston in ga, The ti thn camp ne 08 rie ‘Son ese he deck yp gilda te D inpattaced Iie theater lch he pop whl thea ith tne the revi inpat a Tn Dap no cangte sth hn ah Soc rr i he OS treason ste Te [0 pe aie ‘Graoldime of the MOS trem gate pron poe gh bea a he nut ofthe lag eter "The set io, exposed in ogi (4.11), de the ag laverter mute thar ott ow’ whe the por Bp ere [peat rapt‘ high eel he repeated by te al fink vert State dian three do eer a rc ‘thn pc at fh ag nr nut bo ger hs Te ese ht the neers viteig pt oe a Sp said ot oA oF gure 41) Daz ip wit 05 rani sed 6) fe Spta nmr ce anal|‘he lpop ner 437 can ao be implemen with rmpetay {ean gates nth a homee, the OS and pMOS tani {ein et tren gt recone @ a 8, epi ‘Toe OS and pS traitor inthe arsed tani at onl by 3 and ety ‘Abotainplmentatn of he D-ype pop sown nee 38, ‘The oa rnin uc ia the eck op fee th ‘re a hp wen i hg et na he chs Te ‘ich mae cert age the sae ofthe Ripa. £ £ of a & if T T a6 6 6 igre 438 Another pertain of Dip pp with am pay tome te ‘cea mt be rod a chip wt ip-ope which ou compe ‘try hd eh a sd gue 437 o and @ are 35. {ibe ating aro ciel snp ok lop mst be wed. Sh "Spd hs inner tray ona het SF. Tse whore shew com fp ops teen ft o satay coe oro sow pel ne. Thi ease {oe epsap to be bey rampant ed te eae’ ety eet (i ft to the outa. Tha et sccen when the Bip Sop com penenay lcs ave via dees aay pat 1th dak $y Ate 437, fr stay, gel yt thine pod 3 wih ‘eet to dock yt pop woul be iy tampa ‘Gorse js in Spur te uoorelpping t= oe! ‘sre php and we rm The eo sow oetapng Ie gd tenn of poring unpeeny in poe A dcuionof the anymore typ and variant of state ype ip {ogee bund the ope ofthis ak Hwee, the Die Bp Bop frome gare 419 particaley teeing Thi ip op Ft ‘aly pleted with RAND legato Tere aly sige ‘ok ana very rst Unetinatly oma of 18 N08 td 15 pMOS asst nd there egeconerbly oe chi re. than the easter ip op in gare 4S A hig ety te Input of the Bip op a Sue 4.39 shows in ze 12 toa yy [ yb Pig 439: ype op camping NAND Lge ate 444 Dynamle CMOS circuits ‘Thema admsnage cated with amie CMOS cca ithe all ‘hip ae hat thy requ. Te explant sin th ft ht ee {uncon ar ol ipl lo nMOS taste. Only ove pMOS {cuss sd pr lage gta Le caret opt node Dyeaie {CMOS ete re teie MOS mt ad ea ey ines ‘ew hip ra than hi nate CMOS quanta The pat! ‘Soe fr compos gat igure 40 ows «dye OOS inpheesation of «NOR sae A dynamic CMOS ante this tp ois fue eet ode rope pein. ey i a 3p so mt be gm. Sted a gat in which a ae interchange. The ute may ‘Sool sre a an iaput rag with ad letra "The operation of the NOR ae dsr allows 1 Node peg Vg wht lack ow” 1 Wen sme igh le cara fiero bi“+ Chk the own th rar at pes val 28 tothe pat of eater gee gu AA: A donnie CUOSinpltion of 2 = FFB ‘Thera wld sty af dyeumle CMOS loge nplnentson orm ‘Thee inca the race, pipeline CMOS loge fem te Cae aie of ve ad Bel Lt’ DOMINO. COS. I teat 10 "ae frm of dgramie CMOS shows In iu 4 lle ue 1 DOMINO-CMOS citar malaaoilyprdarpe dig ‘ep of the ck pr." gg eae the apt We the pene peo en epg with te mio pice, hom ‘serach ng ue ca oly sich te fer i cen ae ae ‘tiod. Pigue ( stwn an ample of = DOMINO-CMOS Sage {nT cpa ¥ ofthe dye pt peared wen he ct is Ye, ‘The out Zo hn state leer then ow Tet {he averter att avd of al gla ow ding recharge ‘Ths tpt cm hrf itr ay ow’ ic to gh we Surg Chay ach nod ean aly mabe oe tin ding that ‘mpl peti sade wage rw tate the nest poche Peco begin The at mat sbioly be ie evo tint to ple Tiegh he wort ce ey pt drag msm pede Sa Pe pera tere beh ner han the preg period An [EjtratGsnage of BOMINO-CMOS li tn apis a towrineting Cel adaptation re hrf ered 0 ple I ncn i ere ipso a EXOR gate Figure 4: Aa example os DOMINO.CMDS let Another sndvatage the od to ber ach ogi ate with a i ‘ester thi requser err cn are. Ta, DOMINO-CMOS ag ‘en wel in high prtnae pecs Pail hemos dle fe eis ie mips senders ae plement oe Sle of DOMINO-CMOS [i With expec lo powe pation be ‘ral rematch Dynamic CMOS latches, shift registers and Hip ope most of thea (ie ther statie CMOS counterpart) basically coast of Inverters an racer gts A shi mtr et rt one top Dynan yr fines and pope te ale Sat 8 Sr tip yr om di a pee ‘ge dlck eee ‘Aim cick query reget maintain information in clei tht ne dpm soap eens Thi min eae ‘Sly seve bane Hr nad tered yt ail Ing euros andthe lage carn ofthe emi iio tomuueprjnetions in bth MOS and MOS tants. Te te tuey dent ype of dye CMOS storage entBy dking th fk ees in ete 457, weet the die Die ipo shown in gure 112. Ofcoune, Ci pop eomprians fo eset fk eye stir, LA Fe 2: Byam pe pop wit marin ea 4 "The input dts D in he sow ipo is yaaa td on he {apt gets of he Sat nr en fy igh. Whe by ‘Sipe onpat va ohare oreo be apace of cod int The oroepping ck ae ded to yet tach bus besoing anor a was, ho ee though the cel daring cok rst it he St ip, ome is fp op wl bene apse the hck ‘Sew exit Aspartic he aspen ‘rae toe ere 43 pwns aot tp of drsamie CMOS sit eine ce ‘hn svat fis pene te ered et ihe acon olds beste su onc rod ton, ‘The rslting ak of transparent comteble attention Critical phenomenn in dynamic eects "Te operation of dic MOS cate om the parti apc ‘lott se the hp Evel, During» eran pind af the Sek ‘jn mr nodes na dy cet ome Hotng, wich aoe ‘hry seep okt ochre sharing a rsa + Charge shar ‘ype example of charg sharia shown in ure A ° a ee ep “ & Pique 44: A xsl cre string‘Thigh oe fh gy a et aun wo cas wo ts cl nein rato Ty sd Ts Whe gos gh Ca rg the ele Vg demain tee wes lim aan Dus the potd when fy hgh theca Ce ‘saael bce Cy al Cy. Te mags ods Ad Bae then dese hy o Yam ae a can) ‘As bags Op € Cy ten Va Ve. Hwee, fC tre {ray tegen hgh eel beige gwen ‘are shre btm Cy an Cy. Charan mst ‘err with ean a pb, sb be see ‘Crome Figur 1Sehowsa cheat ofasteton in which rset ec A capactance C exits noe Aan sige ek ‘reich rast When fy er om I 20, expats Cx ‘pps oct tempore trae th eg gal hat wa Ren yma Howe, noe A hey Mp pean ‘thee #60 anda tage ange yon the gal tack 8 ‘els ia th long atage cng tte A —_ er ‘The wae othe oe. capacans CI propo 1 the ‘roof the ea beter toe 8 aed eset Bagel fo {Cen ad to diturtnes of h g e a tade A The ae ch done nos a he ise aoa mt eee to ‘hee i ak co ene wi sera arin “The peopetio of dma MOS deat cane sim ~ ol Mo enya i pct a oe ~ phen sh as age sa and coset mabe the ‘heel ds and aoa of dpe nMOS ee Fal C05 (ati CMOS) ce are carey clay abe of ‘namie CMOS cout nthe VEST ae Sigal mabe ST CMOS TC, however, il we dynamic CMOS eae he Inpemaatin a pel fet, 44.5 Other types of CMOS circuit [pena of tga th ow poesia sce th sie phatase le sing dae aris ‘Toe niantags and ira trite with ipeentaon ‘a bem fr mpage ean headed when ow 2 eng ar ate Tn tn pat several tices hv appeared on pei fs of ‘MO, acting Cascade Voge Swing Logi (CSL) 6) A CVSL Io ate aan by replacing the pMOS turn xen ‘Sma mate CMOS lg cent by aNOS tant, which oe ‘re npt une Th etn In cip area he expe ped) [party xian comple loge ae a pene ia uettc oe dye CVSL. A modi ae of CVSL cael Diet Spt Lev! DSL) Lage wer ear ope ving ere pear ‘hon to tims ter bt dongs epomer tha CVSL ‘me vce hich ay simpy he ta sling Sh i a Inpentaio vn i the xt etn 4.4.6 Choosing 2 CMOS implementation ‘important deo tb tart ew CMOS dng it the ice ‘og inplowtatin, The dee ows odjoame orm ete ine by uber fay The wt domo are poe dation ‘he dip te a aime. Tae tr are eae below ‘a pei own ale CMOS cei donot mip per wn ‘he Cont alae. ane of te sural lag power ly dmiptdin ate tht chnge satel cna ee CMOS cl ‘Site mat pee dapsone rng imei ack ‘wantins In coed dypanle CMOS, tower, nh exe oat ecard ey bed re "Comer the ean inverter a tne 1 the int reine ‘high ding reson ck pros, then te oat sd bw one the ops i oad dig very clack ft, Thre ‘oted Sng Scaring oft apa kd igh owe c- ‘mpton state CMOS iver inthe sane station mld aot ‘Rig te und wold thee sone hop Coro owe rtttry-peated sppiaton and many mor cei se ‘Sends inplencated In sae CMOS. Chap § pres exten Aico on power Speed and aren Dyan CMOS ies ar eerie than tr ttc CMOS ‘onan The Oma tre of dye CMOS la ease {Ba IOS tao arg roered or pegs noe {seco whl fst ae oy tpimented in nMOS trl tor The inp eapatane af dance ae ere tomer {thn saint. Inet, empl age ste plement ‘ate CMOS may cotan any pMOS tosis nen te pall {SP pth: A dynamic CMOS implantation or nud nd td seer ae Bone we aly on OS teasr aes stv Noi ia tate CMOS lg su thea codon pth beeen ‘let's ont and ground a th ruply Thee, wo pe fate ouipt note ae Boating Noein ohage deity on "ee ee sutton yew Re ‘tre lee Dynan eet se tom cr shsng sa om lock foqueacy requir cause of the lenkage of charge from Boating ‘dm Atal tic ar mre obs For en a ‘bccn eign Stari rept in aie CMOS 44.7 Clocking strategies Aang and deta of seer implementing glass tum pn clocking trates ae be dsb i the reve ‘unin of tate ad dyn CMOS cst. Sng ee {Sa che tv ia neck DOMINO CMOS lg po the Inverter per fips sn pan i ely get. The ‘they tear ered oe @ NAND gate plementation of» Bip Sop staid abo te raed. Is aon, the ining bebo ‘Sng pn cicaitsetel t egin ay a ston to ‘ene ean fotnay fx Yat ned wert cw, b whe lie we sore and lng, seein 2a ects tht se ‘smomtapping cs nw etal neg bene (Ck sews ans pret nd rest, Cpe 9 der slong state altered ln eteasiely dans po. ‘ing pb ms! Se wh ini 4.5 CMOS input and output (1/0) cireuit ‘heerlen’ etme CMOS IC anit etre envi ‘be mt cour tnt dani ened cere Temesay berm expected to neuter. CMOS pet an att 45.1 CMOS input cireults [MOS 1x fe be wo commie wih eral ote tre fe, fag BCL and Trl, A'TTLempatble pat arm ere ‘Sapa ltge bl OV how” wie velar bone 2V mt be Inept at igh The evthng pit ofa TTL-napatile CMOS Inverter mn drs be abst 3. However, th withing pol of ‘metre CMOS ieee an ere wit oa rate Ste M05 en phMOS trast) is hl te ply vlogs The tes of amy onthe eich point ofan re ar shown {Se ane dante a Bgre 2 Thi are ly ees ‘Sats TTL compatible CMOS tetra be ayer. ‘igte 446 stws a PTL-CMOS apt ue with th coret teas {Ge'TTT ape oul oe CMOS lvl Aa ipa llr aly fe ‘sted ute dane fm the npn tat deve eed ‘oi thn Scoble nad apace. A loc ia a Dr bu een more bil Hod, Thos fhe a eapectase ‘Senin the roped ie ofthe M08 sed OS ais ‘heat ofthe wit at Be apracinaely a sbown ee i eee Le be 1, Figure 4 FA CMO8 pt tr ‘The wt and gt of mcd rani may ay inp ha oa coin vrs Ti tf ar aon ‘se parila een fr sale Anais, Minin we ‘ets sod erie tbe uel car he eid crc [he owiching pte faut Lhe he et imei i ge A, na CMOS peor, fr tmance with annum canal legth of (03m and mmo cha wih of 3p, h tlt cold ‘oe damaand a we Cc), Siem (7), -aem 45.2 CMOS output balers (drivers) ‘Thre re many dierent tpt buf igs Tey aly cotnin 2 (sper cai ef rer dial ination 32‘ ee {in he tpt ber re determine! by the pects oto Sind ad the ack nga Oot had explana rage ‘tom 20 SF, and Sct fags ary been 80 ae 500M ‘Sie bien arse whan say opts ic oan ‘hgh feguney. ‘hereunto tals ay ‘ed te aloed mason Fe cet lene le mage ‘rope acm th ntact in te tod wit betwen 2 {cage ad bond pois The socaton of peak caret in power ‘Segond ier co rete age ube ian th ip. Tase ‘ston (ch ae snc i cpr) mtb tc ina ‘Sut wh digaing outa bue. "Phe ry aan ar eed in ates wold et nace eg rir curet etn spp aa roma i {ecard sch snore we wed to roe lane ty igre LAT hon an ample fsa cet Ge oat ar ‘Thi inte bur ecu whan ep ip pan can ive {Usp id a NOMI Sgn, 2 an present hapa te {he dod andthe estate smo, respecte. hg eet I ‘ented the gs the 08 nd OS ost ier trae {ena repecneyTme reer ht the der teat ee ‘oc sanaFig A: Shor estate COS att ae 4.6 The layout process 40.1 Introdvetion nh eti, we preset spe st of base dani rl ors CMOS ‘room citalaiag sing tion anda ing tle The Inout dag rubs tet & 0.25pm CNS poses Aug sch ‘pron arly ineports about i tal pr, oly en tl Ine ile wed in hiro dsgn pocem Thins bce may af 1H bear cn ue he emt grr he al nero Iie ch ay ek Afer dcipoe of ac nda mak, the rational dag ad th pot yes ae domo ‘vik an exile. Fly,» poses cect sw the lion ‘plone 46.2 Layout design rates ema maf he rag ie kn a ‘on 38, ACTIVE (hayost elr:sen) "Th cin de he ne tt de which traitors il ‘ere Oxide eat aan thik oe wil be red sin LOGO he ihn ACTIVE pen rn [WELL (out cobar: ys) "Ths maat dts th areas wre the MOS tractors wl esa nel stl sven ate forth IOS trata. A the CMOS proce ees complementary tami ter, the cen fa ype start pro fr 0 ri teria veured. Ths urallyastomatel gute es the NWELL mm pel willbe cto seyret m0 ‘el pate dein POLY (out clu) "This mk iste pio pattem, A transis ana is {iemod mare POLY somes an ACTIVE rpm On op hn {sod platoon rea 2 MOS tener ete Ove ha ‘Ee aru pape nd nl iarnection oly on ‘lds iid the rary tle. The minum ih oe poli des the sir ede [NPLUS (aout nu: rss) . Daring the implasain eS (ik ade sg) te the palo gate act arise. gt Saige ‘ego ona die) eee ii ACTIVE wc ie ‘ot cred iy POLY aod sro by NPLUS- PLUS (Igo clor purple) “Angas he NPLUS mak sore nd ria the MOS ‘tis we ype doped by meme of ho PLUS ahCONTACT (gout clour bk) "Ph a tos coe oe inte dice hge ao he {st tal ner (METAL). Though than ont ole, the tal igre mart pepo (POLY) and sree rain eons {ACTIVE}, Some woos oe engi that lowe diet eo {tet tom pllicn toe suc o rin en. Sech 9 cae [METAL (gout colour be) "Thin des the pattern nthe Sat metal Iyer, hic cn Be hina, tigen cope Curren, tanga fen sed 12 the fr lel seal "A ak ith lg ean e tad for ‘at sot wed ng nerontetos be bet tee ‘remy lw Preston shoul tl be tates with the ne tent, bxae te bt estate shot ve in hgh ‘han ht a eommon- ied alain copper lay, ‘ho flowing st fds ahs wil be wd se eal of got ‘oi inser een a hen of tis caper. Figure Set of doign rules Exton ACTIVE oe POLY (rc dn we) active ee a wlth ce ak wth 4 Tk pct ya wie Dk pci EBitmton POLY nt ACTIVE (ee ees) a neh Lo Raaing m_Exlta NPLUS over ACTIVE (ACTIVE) Spacing betes 2° ACTIVE and NWELL brows ok ne Somnactnin FPLLS we ACTIVE * ACTIVE imam 08 msm den Spacing bce cota { BXimie ACHE owe CONTACT S)Exenioa METAL over CONTACT % Spice CONTACT nt POLY eat S_ CONTACT on gate repo nt owed 2 Spacing etnen ear 03 08 a as as a anos a a asFigure 4 iat the pole othe geet he tie da ‘Pum the BRNO iste Mmm crv Mm rou a ‘Thecention fh topo vow dial tre ps repr seed ty (a) (@) and (ein the Bre Ths pes ae epi (9) Two toatl paral hin ode (ACTIVE sgn ae dae. The Timer ACTIVE ion aly oredr afOS tras Bie ‘he upp ron fr the p08 teers: Te evingead CMOS {itn of th oer SOS nd OS ‘Sound the ver ACTIVE rg ath ik dara eth pet ‘goa ured by 4 PPLUS boundary. ‘Titel net Sie SL no wh oye ACTIVE nly ‘tea besos PWELL. Pueall polsion (POLY) gto a denen Seely ac bth ACTIVE reins Metal (METAL upp aed () Abt METAL POLY te tri nin, ‘Sinan feigning tor se gel oe a ses ‘epreetconlach ‘Ph rar conection oe peed Intec ih Te inh ho th ik NNAND fae on te KA of the eat gam in gre The Ata of wo p08 trast and one nMOS trator {ictal wth METAL wo frm th NAND gate otpat Ti ann on cet ya metal rennet of nd lio ‘arn hens ona vin mt The NAND gt oat ected oe ate in mast rit nMOS and p MOS enor (6) The hed 2408 ocean a fom the in ee 4200, i comin sad to antabermoThe ery a ‘herein op no separate ifn a in gure 0). No bak Wa wag wd the een rose pe mba there comet to grout ad the mel etal he ‘gu of orate NPLUS and PPLUS ara, ropes of the FEXNOW al ss cage shows gue 40) “i hen gh oat WEL odsc in ston 92.2) Tes conta eee to af i and Ry, opty urs 81 and 2A mere, ba ec, farce plas atl tat aja every soppy ota ‘du sabre contac ma very ground cota One oat ‘omitted in seains whee oo el or oo eta contac we every dt This sje fre adel te oat dean 4.644 Example of the layout procedure ‘flowing example sh th compte bot procs rom tal Boda fatto, throug Booka opinion, et dg sad 2 ign ony Conse telowing Bac eet Badbi VEO Ged abe ‘Tooplnise hi fgeton fr inpnetton in CMOS ners Bose ‘yeni the Smut Z = f mats be oun, bese ery ‘Sige CMOS lage pte mpat an mrad eprnoes 2 = abe s cds acd sabea (be 42d Hod + bed) = lie t(er e+ be)d) = Gera) = Wierd - eed - oT ‘hers, opti ation fr implementation a sige CMOS espe 2a yo Thc neu nop 2a Figure At: Che ag oping 2 = THEFT ‘The copondiag CMOS sick diagram aoa ean be fund in Ae 4320) and Sie 432) ret. ge 452() shows & ‘ttt ugh tbe ie DD he aot.aaqpe Fg Sh ga an) rat fe (GWELL) ant WELL costact hols (CONTACT adn. bene ‘bent anro egme a PELL rot re cones ough Sek op hae “in ett hoo» ale CMOS ae a me ya secon oft ap dis arm ‘MOS tantra agra at OS tram eh ‘Ava rol feed fon rons th roe tan of sour anne re lw sot ee lat let pe {G08 fechas with seed sure and Uni eos Mle "Th proce crsnton in gue 626) ede ang the ie DD! lpn gs (emt) nd eo wren tl pers (VES). Te ‘Be power property teh “The ft nee gly redo emery nots In lg ip, the ten rts tuned ie ef eaing ‘atc ohn oe i earl more han 8. Te dosttet conpenat fr te ples physical problems (hgh cet le Is the crm) or Sr th pms ht satin ne nie fr CAD tool Tir ater xt of problem sre ply when owing ‘eaalng operons it epee by re 48.5. Guidelines for layout design Desig coret Iya aver mor tha ut 2 tration af the ‘Sent gran tos nou ha mets the se deg A temon nt be ps to seer iy to 2 ania gat are wl epi een th cml eon ne wi the devon oft new Hay ha be aed Sorte Sig af mam ipso whe TCs bee salle, they saerally show a hgh perfor, conse ower a ar cheaper Baad, wheter ery lo age lg bok, mst be ‘imi it repo ps pcan our an ala {tio metal trp) adrian al ng ‘Seemcin) The benay owe bP its ca coal erg sharing ad voltage drop actos suppl i patel realy ri te perrant be wl ‘hn sgl net. Sach cs ae exes dae a Sapte “ale 2 shoe some ypc val ofthe capac ian of ‘iret componente elon 28 po CMOS techy ‘ih steht = 504 (on) (= a) ‘ios apse Teta Tar — [pan Ta way aot ony [Seve at ye Feo 870 SSeS ata [Risin Tek (OMETAL) | Seep seem wo=nj0 rapt) |e pe 01a? (ETAL) | Seep costfem soma Compe (0s) | snc ap 8 ua? 00 (0% (SETAE | Spec asso Se te a a a Sawamy Iolite | ak onde ae cp 0080 um | > = Se 00/0 (Sethe, | Spee ig 0 ym | Sings tonyo esl tat pysieon aod n/p unto a only be wed fe ‘pst roan le eperaly dip tbr CMOS procome inde fe to seven ee total ay cat, the oper stale as peat (Wren lrg imma tre od lange uci, clos {is opp level wast be ued auc pope reall Cay ower uly tk “The abo dcuins on CMOS out inplemetation concede is hapten Mor lfrmaton on the dh of CMOS celts ad Ite ‘a be odin fh ene i.4.7 Conclusions ‘Sted now suse 0% fh tl ot. To ‘in vege CMOS kw poe dita, This an Porat reac ince VLSI cel ich ctl io ‘Site MOS crests areca by ih ipo ad pare copstanon an ur oe entre Those corp tp a mate CMOS bg ot aoa win oa of a OS coe ‘ya Dyune COS crouse MOS my aod ae theere parison thr EMO compre Tae os a ‘ir shar ayaa toponeaton mt three ocd by = afte rdicton i poor dipatn. Geral, ate CMOS Hes {eines 7D proc sd ath he tt power fet Ilene ‘Sim br VLSE Nore, abn ey inp Cre {tepunv nica Grete tow incsiag note yeaa ‘xT con wag rope Low-power boc sad Daaaog aa {etsy th de he mace of par a 9 oe Seco rh mitre of MOS devi epi ‘a caper 3 Varo aS cet pacipe oad, Tae ‘Sap cepa he mot importa coer betwen CMOS an ‘0s rent Tne iran seve nth sas wc, ‘etal eign al aout en. A cred COS hut dh Sri spread chapter ile wing ted ot fre. ‘i cg ate The statin he CMOS and nMOS ce {Eas and yn pcp dtl nha cg sell edt ‘ode fie gh ito be pan fie CMOS ch 4.8 References (CMOS ply and ea (ee a hater 3) [i Reed Cee, Isaaditon to Micolactroni aeeaton’ Module Seon Sa State Devi ole 5,188 [a ¥ Sa ta, Adranend Erno Device Tetley’ TERE IEDM, pp. 0437, Washington DC, 196 pi sms LSI Teco’ Mera Hi, ow Ye, 188 Ba. Woifand RN. Taber, "Sco psig the VS a ‘Volume Prose Tel, Ltn Pres, 1986 [8 Se, "Mn omiondacor Deis Pics, Joa Wey Sone 1907 (CMOS design pencils genera) IH ©. Man, L Comey, “Todo o VL Sytem’, ‘dice, 180 DLN, Wee, K, Earghio, ‘Peis of CMOS VES! Desig, «Sytem Perspective, ‘dion Wen, 18 (6 L.A. Glue, D.. Dobberpal Th Design and Ansa VSI et! Addo Wey, 185 (mM Ansara, Dipl CMOS crest Deg, ‘veer Acie Pars 86 (8) 6. Hae a ‘Gato Vag Switch Lage’ IEEE Digest of tal pper of he ISSCC, 1986(0 Sn Rata, ‘ii ing Cin: A De Feet (0) Kory Berm. "HIGH SPEED CMOS DESIGN STYLES, Kine Actes Py, 190 (0 Inert Sl State Cres Contes ig of Teal papers, Fees 200, Dp M1, pp TET pp. AAT, pp. za ame dition in CMOS [2] 1398, Yond, "shar Cut Dapationof tate CMOS Circe ad te Impct 1) Clete he with Wy of tantra tha ¥

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