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BC214
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
Sourced from process 68.
TO-92
Collector-Emitter Voltage
Parameter
Value
-30
Units
V
VCBO
VEBO
Collector-Base Voltage
-45
Emitter-Base Voltage
-5.0
IC
-500
mA
TJ, TSTG
- 55 ~ 150
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Voltage
IC = -2mA, IB = 0
-30
V(BR)CBO
Collector-Base Voltage
IC = -10A, IE = 0
-45
V
V
V(BR)EBO
Emitter-Base Voltage
IE = -10A, IC = 0
-5.0
ICBO
VCB = -30V, IE = 0
-15
nA
IEBO
VEB = -4V, IC = 0
-15
nA
On Characteristics *
hFE
VCE(sat)
DC Current Gain
100
140
120
400
-0.25
-0.6
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5mA
VBE(sat)
IC = -100mA, IB = -5mA
VBE(on)
Base-Emitter On Voltage
-0.6
200
-1.1
-0.72
NF
Noise Figure
hfe
COB
Output Capacitance
MHz
2.0
140
dB
600
10
pF
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25C
Max.
625
5.0
Units
mW
mW/C
RJC
83.3
C/W
RJA
200
C/W
BC214
BC214
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I11