Low VCE(sat) IGBT

High Speed IGBT

IXSH/IXSM 40 N60
IXSH/IXSM 40 N60A

VCES

I C25

VCE(sat)

600 V
600 V

75 A
75 A

2.5 V
3.0 V

Short Circuit SOA Capability

Symbol

Test Conditions

V CES

TJ = 25C to 150C

600

V CGR

TJ = 25C to 150C; RGE = 1 M

600

V GES

Continuous

20

V GEM

Transient

30

I C25

T C = 25C

75

I C90

T C = 90C

40

I CM

T C = 25C, 1 ms

150

SSOA
(RBSOA)

V GE = 15 V, TJ = 125C, RG = 2.7
Clamped inductive load, L = 30 H

ICM = 80
@ 0.8 VCES

tSC
(SCSOA)

V GE = 15 V, VCE = 360 V, TJ = 125C

RG = 22 , non repetitive

10

PC

Maximum Ratings

TO-204 AE (IXSM)

C
www.DataSheet.co.kr

T C = 25C

300

-55 ... +150

TJM

150

Tstg

-55 ... +150

TJ

Md

TO-247 AD (IXSH)

Mounting torque

1.13/10 Nm/lb.in.

G = Gate,
E = Emitter,

C = Collector,
TAB = Collector

Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 20 kHz

Weight

TO-204 = 18 g, TO-247 = 6g

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

Symbol

Test Conditions

BVCES

IC

= 250 A, VGE = 0 V

VGE(th)

IC

= 4 mA, VCE = VGE

I CES

V CE = 0.8 VCES
V GE = 0 V

I GES

V CE = 0 V, VGE = 20 V

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25C
TJ = 125C

V
7

50
1

A
mA

100

nA

Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding

Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density

VCE(sat)

IC

= IC90, VGE = 15 V

40N60
40N60A

IXYS Corporation. All rights reserved.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.

2.5
3.0

V
V

91546F (4/96)

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
Datasheet pdf - http://www.DataSheet4U.net/

IXSH 40N60
IXSM 40N60
IXSH 40N60A IXSM 40N60A
Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

gfs

IC = IC90; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 %

I C(on)

VGE = 15 V, VCE = 10 V

16

Cies

200

4500

pF

350

pF

C res

90

pF

Qg

190

260

nC

45

60

nC

88

120

nC

C oes

Q ge

VCE = 25 V, VGE = 0 V, f = 1 MHz

23

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

Q gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon

Inductive load, TJ = 25C

55

ns

IC = IC90, VGE = 15 V, L = 100 H

VCE = 0.8 VCES, RG = 2.7

170

ns

400

ns

Switching times may

increase for VCE (Clamp)
> 0.8 VCES, higher TJ or
increased RG

40N60
40N60A

400
200

ns
ns

40N60
40N60A

5.0
2.5

mJ
mJ

55

ns

Inductive load, TJ =
125 C

td(off)

IC = IC90, VGE = 15 V,
L = 100 H

tfi

VCE = 0.8 VCES,

RG = 2.7

Eoff

Remarks: Switching times

may increase for
VCE (Clamp) > 0.8 VCES,
higher TJ or increased R G

40N60
40N60A

170

ns

1.7

mJ

340

1000
525

ns
ns

40N60
40N60A

600
340

1500
700

ns
ns

40N60
40N60A

12
6

www.DataSheet.co.kr

1 = Gate
2 = Collector
3 = Emitter
Tab = Collector

TO-204AE Outline

mJ
mJ
0.42 K/W

RthJC
RthCK

TO-247 AD Outline

0.25

K/W

1 = Gate
2 = Emitter
Case = Collector

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Datasheet pdf - http://www.DataSheet4U.net/

IXSH 40N60
IXSM 40N60
IXSH 40N60A IXSM 40N60A

Fig. 1 Saturation Characteristics

80

T J = 25C

Fig. 2
200

13V

VGE = 15V

VGE = 15V

160

60
11V

50

IC - Amperes

IC - Amperes

T J = 25C

180

70

Output Characterstics

40
30
20

9V

140

13V

120
100
80

11V

60
40

10

9V

20

7V

7V

VCE - Volts

10

Fig. 4

VCE(sat) - Normalized

8
7

VCE - Volts

VGE=15V

1.4

6
IC = 80A

www.DataSheet.co.kr

IC = 40A

3
2

IC = 20A

1
9

10

IC = 80A

1.3
1.2
1.1

IC = 40A

1.0
0.9
IC = 20A

0.8

0
8

11

12

13

14

0.7
-50

15

-25

VGE - Volts

25

50

75

100 125 150

TJ - Degrees C

Fig. 5 Input Admittance

Fig. 6

Temperature Dependence of
Breakdown and

1.3

80
VCE = 10V
Threshold Voltage

BV / V GE(th) - Normalized

70

IC - Amperes

60
50
40

TJ = 25C

30
T J = 125C

20

T J = - 40C

10
0

18 20

Temperature Dependence
of Output Saturation Voltage

1.5

10 12 14 16

VCE - Volts

Fig. 3 Collector-Emitter Voltage

vs. Gate-Emitter
Voltage
T = 25C

10

VGE - Volts

11

12

13

BV CES

1.2

IC = 3mA

1.1
1.0
0.9
V GE8th)

0.8
0.7
-50

IC = 4mA

-25

25

50

75

100 125 150

TJ - Degrees C

IXYS Corporation. All rights reserved.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
Datasheet pdf - http://www.DataSheet4U.net/

IXSH 40N60
IXSM 40N60
IXSH 40N60A IXSM 40N60A

1000

Fig.8 Dependence of Turn-Off Energy

Per Pulse and Fall Time on RG
12

1000

RG = 10

hi-speed

500

6
tfi (-A)
hi-speed

250

tfi - nanoseconds

Eoff (-A)

0
10

20

30

40

50

60

70

8
Eoff (-A), hi-speed

600

400

tfi (-A), hi-speed

200

0
0

IC = 40A

800

Eoff - millijoules

Tfi - nanoseconds

750

10

T J = 125C

TJ = 125C

80

Eoff - millijoules

Fig.7 Turn-Off Energy per Pulse and

Fall Time on Collector Current

10

20

IC - Amperes

30

40

50

RG - Ohms

Fig.9 Gate Charge Characteristic Curve

Fig.10

Turn-Off Safe Operating Area

100

15
IC = 40A
VCE = 480V

T J = 125C

10

9
www.DataSheet.co.kr

IC - Amperes

VGE - Volts

12

RG = 22
dV/dt < 6V/ns

0.1

0.01

50

100

150

200

250

100

200

Qg- nCoulombs

300

400

500

600

700

VCE - Volts

Fig.11 Transient Thermal Impedance

Thermal Response - K/W

1
D=0.5

0.1 D=0.2
D=0.1
D=0.05
D=0.02

D = Duty Cycle

0.01 D=0.01
Single Pulse

0.001
0.00001

0.0001

0.001

0.01

0.1

Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

IXYS Corporation. All rights reserved.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
Datasheet pdf - http://www.DataSheet4U.net/