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2SK3793
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3793
Isolated TO-220
FEATURES
Super low on-state resistance
(Isolated TO-220)
VDSS
100
VGSS
20
ID(DC)
12
ID(pulse)
22
PT1
20
PT2
2.0
Channel Temperature
Tch
150
Note1
Tstg
55 to +150
Note2
IAS
10
Note2
EAS
10
mJ
Storage Temperature
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16777EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
2SK3793
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
10
IGSS
VGS = 20 V, VDS = 0 V
10
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
| yfs |
VDS = 10 V, ID = 6 A
5.0
10.3
RDS(on)1
VGS = 10 V, ID = 6 A
89
125
RDS(on)2
VGS = 4.5 V, ID = 6 A
96
148
Note
Note
Input Capacitance
Ciss
VDS = 10 V
900
pF
Output Capacitance
Coss
VGS = 0 V
110
pF
Crss
f = 1 MHz
50
pF
td(on)
VDD = 50 V, ID = 6 A
ns
VGS = 10 V
ns
RG = 0
30
ns
ns
Rise Time
tr
td(off)
Fall Time
tf
QG
VDD = 80 V
21
nC
QGS
VGS = 10 V
3.0
nC
QGD
ID = 12 A
6.2
nC
VF(S-D)
IF = 12 A, VGS = 0 V
0.89
trr
IF = 12 A, VGS = 0 V
52
ns
Qrr
94
nC
Note
1.5
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
D.U.T.
L
50
PG.
VGS = 20 0 V
RL
RG
PG.
VDD
VGS
VGS
Wave Form
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
= 1 s
Duty Cycle 1%
50
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
td(on)
ton
tf
toff
2SK3793
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
25
100
80
60
40
20
20
15
10
5
0
0
25
50
75
100
125
150
175
25
TC - Case Temperature - C
50
75
100
125
150
175
TC - Case Temperature - C
10
ID(DC)
1 ms
1
Power Dissipation Limited
10 ms
0.1
TC = 25C
ingle pulse
0.01
0.1
10
100
ID - Drain Current - A
ID(pulse)
RDS(on) Limited
(at VGS = 10 V)
Rth(ch-A) = 62.5C/W
100
10
Rth(ch-C) = 6.25C/W
1
0.1
Single pulse
0.01
100
1m
10 m
100 m
10
100
1000
PW - Pulse Width - s
2SK3793
25
100
20
VGS = 10 V
15
4.5 V
10
5
TA = 150C
75C
25C
55C
10
ID - Drain Current - A
ID - Drain Current - A
Pulsed
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
0
1.5
1
0.5
50
100
150
200
100
10
0.1
VDS = 10 V
Pulsed
0.01
0.01
0.1
10
100
ID - Drain Current - A
200
Pulsed
150
VGS = 4.5 V
100
10 V
50
0
0.1
10
100
200
Pulsed
150
ID = 12 A
100
ID - Drain Current - A
TA = 55C
25C
75C
150C
VDS = 10 V
ID = 1 mA
-50
0
-100
2.5
6A
50
0
0
10
15
20
250
Pulsed
Ciss, Coss, Crss - Capacitance - pF
200
150
V GS = 4.5 V
10 V
100
50
VGS = 0 V
f = 1 MHz
1000
100
Coss
Crss
0
-100
-50
50
100
150
10
0.001
200
VDD = 50 V
VGS = 10 V
RG = 0
td(off)
10
10
1000
td(on)
tr
tf
120
100
0.1
SWITCHING CHARACTERISTICS
12
ID = 12 A
100
10
VDD = 80 V
50 V
20 V
80
60
40
VGS
20
VDS
1
0.1
10
0
0
100
10
15
20
25
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
VGS = 10 V
10
4.5 V
1
0V
0.1
100
Ciss
VGS = 0 V
di/dt =100 A/s
100
0.01
10
1
0
0.5
1.5
0.1
10
100
2SK3793
2SK3793
10
100
100
IAS = 10 A
EAS = 10 mJ
1
VDD = 50 V
RG = 25
VGS = 200 V
Starting Tch = 25C
60
40
20
0.1
1
0
10
100
1m
10 m
25
50
75
100
125
150
L - Inductive Load - H
VDD = 50 V
RG = 25
VGS = 200 V
IAS 10 A
80
2SK3793
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
4.5 0.2
3 0.1
4 0.2
0.7 0.1
1.3 0.2
1.5 0.2
2.54
2.54
2.7 0.2
12.0 0.2
3.2 0.2
13.5 MIN.
15.0 0.3
10.0 0.3
2.5 0.1
0.65 0.1
1. Gate
2. Drain
3. Source
1 2 3
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK3793
The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
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granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 02. 11-1