Академический Документы
Профессиональный Документы
Культура Документы
Timing
Noise
Power
high-impedance nets
Receiver model: complex input capacitance
Efficient characterization
Vdd & Temperature scaling for IR drop, multi-Vdd, DVFS,
corners
load1
driver
Driver Model
Receiver Model
load2
Rd
v(t)
Reduced-Order
Network Model
Input cap
single value
Driver Model
Receiver Model
Receiver model
i(t,v)
C1
C2
Nonlinear
Current
Source
Load1
Driver
Load2
input
slew
0.7
0.5
0.2
Cinp
(single value)
0.1
.023 .047 .065 .078 .091
output cap
Measure current
and voltage at input
pin for receiver
model
input
slew
0.7
3.31
3.61
3.98
4.12
5.32
0.5
2.72
3.12
3.43
3.82
4.25
0.2
2.22
2.54
2.72
3.11
3.47
0.1
1.31
1.75
1.99
2.31
2.77
output cap
Driver Model
input
slew
0.7
C1,C2
0.5
C1,C2
0.5
0.2
C1,C2
0.2
0.1
C1,C2
0.1
output cap
Measure current
and voltage at input
pin for receiver
model
output cap
Measure current
through load cap
for driver model
Miller effect
at input pin
of inverter
One Cinp
value is
insufficient
Input cap:
single value
C1
Cinp
CCS
C2
Receiver model
What is scaled:
Driver model
Receiver model
Timing constraints: setup, hold, recovery, removal,
MPW
Straightforward characterization
lib_1.2v.db
lib_1.0v.db
lib_0.8v.db
Separate CCS
Libraries
CK
100
tsetup
95
setup (ps)
105
90
85
80
75
CK
70
65
60
D
2005 Synopsys, Inc. (10)
0.8
0.85
0.9
0.95
1
Vdd (V)
1.05
1.1
1.15
1.2
Major Foundry
800
liberty,C C S [ps]
850
3000
750
liberty,CC S[ps]
2500
2000
2% vs.
HSPICE
liberty
-3%
+3%
CC S
700
650
600
600
HSPICE[ps]
650
700
750
800
850
900
liberty
-3%
+3%
CC S
1500
3% vs.
HSPICE
1000
500
HSPICE[ps]
0
0
500
1000
1500
2000
2500
3000
3500
+/-2%
+/-3%
6,000
5,000
4,000
CCS
-2%
+2%
H SP IC E
C C S [ns]
3
NLDM
3,000
CCS
+3%
-3%
2,000
1
1,000
0
0
Hspice [ns]
1,000
2,000
3,000
4,000
5,000
Prime Time
90nm Library
65nm Library
6,000
Timing
Noise
Power
Noise Analysis
Aggressor
Failure Analysis
0
Victim
Calculate
Glitch
Propagated
Glitch
Noise
Immunity
Curve
0
Victim
I/V Curve
Noise
Propagation
Faster Characterization:
100X faster characterization vs. NLDM Noise
Much less circuit simulation is needed
Typical 90nm library in under 4 hours on 10 cpus
High Accuracy:
Accurately models noise propagation and driver
weakening
Accurate voltage and temperature scaling using
the same scaling mechanism as CCS Timing
Same accurate receiver modeling as CCS Timing
CCS-N
CCS-N
CCS-N
D CCS-N
CK CCS-N
A1
A1
Z
CCS-N
N_7
A2
A2
CCS-N
CCS-N
timing() {
related_pin
: "A1";
ccsn_first_stage() { /* A1 to N_7 */
}
ccsn_last_stage() { /* N_7 to Z */
}
}
timing() {
related_pin
: "A2";
ccsn_first_stage() { /* A2 to N_7 */
}
ccsn_last_stage() { /* N_7 to Z, copy of the above */
}
}
}
2. Dynamic Behavior
Information
3. Parameters
of two variables
Vin: Input voltage
Vout: Output voltage
A fast DC sweep simulation is used to capture data
Vin
2005 Synopsys, Inc. (25)
+
-
+
-
Vout
Internal Nodes
Voltage (V)
0.5
Propagated noise
waveform (PTSI)
100
200
Time (ps)
300
400
(quiet) victim
aggressor
1.2
1.2
0.8
0.6
0.4
0.2
Noise Propagation
(Node B)
0.8
0.6
0.4
0.2
0.2
0.4
0.8
0.6
SPICE Noise Height (V)
1.2
0.2
0.4
0.8
0.6
SPICE Noise Height (V)
1.2
1.2
10%
1
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0.2
0.4
0.8
0.6
SPICE Noise Height (V)
NLDM Noise
1.2
0.2
0.4
0.8
0.6
SPICE Noise Height (V)
CCS Noise
1.2
Library Technology
Number
of cells
Characterization
time on 10 CPUs
Lib1 90-nm
595
1.5 hrs
Lib2 90-nm
747
2 hrs
Lib3 90-nm
593
4 hrs
Lib4 90-nm
541
1 hr
Lib5 90-nm
1304
4 hrs
Lib6 65-nm
766
3 hrs
High Accuracy
Noise propagation and driver weakening
Voltage and temperature scaling
Timing
Noise
Power
Vsleep
Fine Grain:
Sleep transistor within each cell
IN
MTCMOS
Block A
LVt
OUT
VirtualVdd
Sleep
Block B
Sleep-mode
Power switch control
Block C
Coarse Grain:
Sleep transistor for entire block
VDD
VSS
VDD
INTERNAL VSS
3.31
0.7
input 0.5
slew 0.2
0.1
3.61
3.98
4.12
5.32
2.72
3.12
3.43
3.82
4.25
2.22
2.54
2.72
3.11
3.47
1.31
1.75
1.99
2.31
2.77
output cap
Dynamic Current
Waveform per
transition per Rail
0.7
0.5
i(t)
0.2
0.1
input
.023 .047 .065 .078 .091
slew
output cap
I i + I i 1
I n (t n t n 1 )
(ti ti 1 ) +
0 Idt
2
ln (I n 1 I n )
i =1
Charge/energy can
be calculated by
integrating current
VDD1
Cpar
GND
Rpar
Rpar
IN1
OUT
Cload
IN2
Cpar
Cload
Cint
Equivalent Parasitics
2005 Synopsys, Inc. (41)
Accurately Models:
CCS Summary
Continuing With A Tradition Of Innovation
Timing
Noise
Power
It includes:
CCS Backgrounder
White Papers
Format Specification
FAQ