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TDA7560

4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD


PRODUCT PREVIEW

SUPERIOR OUTPUT POWER CAPABILITY:


4 x 50W/4 MAX.
4 x 45W/4 EIAJ
4 x 30W/4 @ 14.4V, 1KHz, 10%
4 x 80W/2 MAX.
4 x 77W/2 EIAJ
4 x 55W/2 @ 14.4V, 1KHz, 10%
EXCELLENT 2 DRIVING CAPABILITY
HI-FI CLASS DISTORTION
LOW OUTPUT NOISE
ST-BY FUNCTION
MUTE FUNCTION
AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION
LOW EXTERNAL COMPONENT COUNT:
INTERNALLY FIXED GAIN (26dB)
NO EXTERNAL COMPENSATION
NO BOOTSTRAP CAPACITORS
ON BOARD 0.35A HIGH SIDE DRIVER

MULTIPOWER BCD TECHNOLOGY


MOSFET OUTPUT POWER STAGE

FLEXIWATT25

ORDERING NUMBER: TDA7560

FORTUITOUS OPEN GND


REVERSED BATTERY
ESD
DESCRIPTION
The TDA7560 is a breakthrough BCD (Bipolar /
CMOS / DMOS) technology class AB Audio
Power Amplifier in Flexiwatt 25 package designed
for high power car radio
The fully complementary P-Channel/N-Channel
output structure allows a rail to rail output voltage
swing which, combined with high output current
and minimised saturation losses sets new power
references in the car-radio field, with unparalleled distortion performances.

PROTECTIONS:
OUTPUT SHORT CIRCUIT TO GND, TO VS,
ACROSS THE LOAD
VERY INDUCTIVE LOADS
OVERRATING CHIP TEMPERATURE WITH
SOFT THERMAL LIMITER
LOAD DUMP VOLTAGE
BLOCK AND APPLICATION DIAGRAM
Vcc1

Vcc2
470F

100nF

ST-BY

MUTE

HSD

HSD
OUT1+

IN1

OUT10.1F

PW-GND
OUT2+

IN2

OUT20.1F

PW-GND
OUT3+

IN3

OUT30.1F

PW-GND
OUT4+

IN4

OUT40.1F

PW-GND
AC-GND
0.47F

SVR

TAB

S-GND

47F
D94AU158B

November 1999
This is preliminary information on a new product now in development. Details are subject to change without notice.

1/10

TDA7560
ABSOLUTE MAXIMUM RATINGS
Symbol

Value

Unit

Operating Supply Voltage

18

VCC (DC)

DC Supply Voltage

28

VCC (pk)

Peak Supply Voltage (t = 50ms)

50

Output Peak Current:


Repetitive (Duty Cycle 10% at f = 10Hz)
Non Repetitive (t = 100s)

9
10

A
A

VCC

IO

Ptot

Parameter

Power dissipation, (Tcase = 70C)

80

Tj

Junction Temperature

150

Tstg

Storage Temperature

55 to 150

PIN CONNECTION (Top view)

HSD

P-GND4

MUTE

OUT4-

V CC

OUT4+

OUT3-

OUT3+

P-GND3

IN3

AC-GND

IN4

IN2

S-GND

IN1

SVR

OUT1+

P-GND1

V CC

OUT1-

ST-BY

OUT2+

OUT2-

TAB

25

P-GND2

D94AU159A

THERMAL DATA

2/10

Symbol

Parameter

Rth j-case

Thermal Resistance Junction to Case

Max.

Value

Unit

C/W

TDA7560
ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600; RL = 4; Tamb = 25C;
Refer to the test and application diagram, unless otherwise specified.)
Symbol

Parameter

Test Condition

Iq1

Quiescent Current

RL =

VOS

Output Offset Voltage

Play Mode

dVOS

During mute ON/OFF output


offset voltage

Gv

Voltage Gain

dGv

Channel Gain Unbalance

Po

Output Power

Min.

Typ.

Max.

120

200

320

mA

80

mV

80

mV

27

dB

dB

25

26

Unit

VS =
VS =
VS =
VS =

13.2V;
13.2V;
14.4V;
14.4V;

THD = 10%
THD = 1%
THD = 10%
THD = 1%

23
16
28
20

25
19
30
23

W
W
W
W

VS =
VS =
VS =
VS =

13.2V;
13.2V;
14.4V;
14.4V;

THD = 10%, 2
THD = 1%, 2
THD = 10%, 2
THD = 1%, 2

42
32
50
40

45
34
55
43

W
W
W
W

41
75

45
77

W
W

50
80

W
W

Po EIAJ

EIAJ Output Power (*)

VS = 13.7V; R L = 4
VS = 13.7V; R L = 2

Po max.

Max. Output Power (*)

VS = 14.4V; R L = 4
VS = 14.4V; R L = 2

THD

Distortion

Po = 4W
Po = 10W; RL = 2

eNo

Output Noise

A Weighted
Bw = 20Hz to 20KHz

SVR

Supply Voltage Rejection

f = 100Hz; Vr = 1Vrms

50

70

fch

High Cut-Off Frequency

PO = 0.5W

100

300

Ri

Input Impedance

80

100

120

CT

Cross Talk

60

70
60

dB
dB

ISB

St-By Current Consumption

VSt-By = 1.5V

75

Ipin4

St-by pin Current

VSt-By = 1.5V to 3.5V

10

VSB out

St-By Out Threshold Voltage

(Amp: ON)

VSB in

St-By in Threshold Voltage

(Amp: OFF)

Mute Attenuation

POref = 4W

80

VM out

Mute Out Threshold Voltage

(Amp: Play)

3.5

VM in

Mute In Threshold Voltage

(Amp: Mute)

VAM in

VS Automute Threshold

(Amp: Mute)
Att 80dB; POref = 4W
(Amp: Play)
Att < 0.1dB; PO = 0.5W

AM

Ipin22

Muting Pin Current

f = 1KHz PO = 4W
f = 10KHz PO = 4W

0.006
0.015

0.05
0.07

%
%

35
50

50
70

V
V
dB
KHz

3.5

V
1.5
90

V
1.5

6.5

VMUTE = 1.5V
(Sourced Current)

VMUTE = 3.5V

-5

V
dB

V
V

7.5

12

18

18

0.6

800

mA

HSD SECTION
Vdropout
Iprot

Dropout Voltage
Current Limits

IO = 0.35A; VS = 9 to 16V

0.25
400

(*) Saturated square wave output.

3/10

TDA7560
Figure 1: Standard Test and Application Circuit

C8
0.1F

C7
2200F
Vcc1-2

Vcc3-4
6

R1
ST-BY

20

4
10K
R2

C9
1F

MUTE

22
47K

C10
1F

C1
IN1

0.1F
12

17

C2 0.1F

19

15
C3 0.1F

21

IN4

14
S-GND

23

13

C5
0.47F

OUT4

24

16

4/10

OUT3

18

IN3

C4 0.1F

OUT2

11

IN2

OUT1

10
SVR
C6
47F

25
HSD

1
TAB
D95AU335B

TDA7560
Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale)
COMPONENTS &
TOP COPPER LAYER

BOTTOM COPPER LAYER

5/10

TDA7560
Figure 3. Quiescent current vs. supply
voltage.

Figure 4. Output power vs. supply voltage.

Id (mA)

240

Vi = 0

220

RL = 4 Ohm

200
180
160
140

10

12
Vs (V)

14

16

18

Figure 5. Output power vs. supply voltage.


Po(W)
130
120
Po-max
110
100
RL=2 Ohm
90
THD=10%
f=1 KHz
80
70
60
50
THD=1 %
40
30
20
10
8 9 10 11 12 13 14 15 16 17 18
Vs (V)
Figure 7. Distortion vs. output power

10

THD(%)

80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5

Po (W)
Po-max

RL=4 Ohm
f= 1 KHz

THD=10 %

THD=1 %

10

11

12

13 14
Vs (V)

15

16

17

18

Figure 6. Distortion vs. output Power


THD(%)
10
Vs=14.4 V
RL= 4 Ohm

f = 10 KHz

0.1

f = 1 KHz

0.01

0.001
0.1

10
Po (W)

Figure 8. Distortion vs. frequency.


10

THD (%)

Vs=14.4 V

RL= 2 Ohm
f = 10 KHz

0.1

0.1

f = 1 KHz

0.01

0.001
0.1
6/10

Vs = 14.4 V
RL =4 Ohm
Po =4 W

Po (W)

0.01

10

0.001
10

100

f (Hz)

1000

10000

TDA7560
Figure 9. Distortion vs. frequency.

Figure 10. Crosstalk vs. frequency.

THD(%)

10

90

CROSSTALK(dB)

80

Vs =14.4 V
RL= 2 Ohm

70

Po= 8 W

60

0.1
50

RL= 4 Ohm
Po= 4 W
Rg= 600 Ohm

40

0.01

30

0.001
10

100

f (Hz)

1000

10000

Figure 11. Supply voltage rejection vs. frequency.


SVR(dB)
100
90

20
10

f (Hz)

1000

10000

Figure 12. Output attenuation vs. supply


voltage.
OUT ATTN (dB)
0

80

100

RL= 4 Ohm
Po= 4 W ref.

-20

70
-40

60
50

-60

Rg= 600 Ohm

40

Vripple= 1 Vrms

-80

30
20
10

100

f (Hz)

1000

10000

Figure 13. Output noise vs. source resistance.

-100
5

70
60

10

100
1000
Rg (Ohm)

10000

100000

n (%)

90
80

n
Vs=13.2V

70

RL=4 x 4 Ohm

60

f= 1 KHz SINE

50

40

40
Ptot

30

20

20

10

10

0
1

10

50

30

A wgtd

Ptot (W)

80

22-22KHz lin.

Figure 14. Power dissipation & efficiency vs.


output power (sine-wave operation)
90

Vs= 14.4V
RL= 4 Ohm

7
Vs (V)

En (uV)
130
120
110
100
90
80
70
60
50
40
30
20

0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Po (W)
7/10

TDA7560
Figure 15. Power dissipation vs. ouput power
(Music/Speech Simulation)
30

Figure 16. Power dissipation vs. output power


(Music/Speech Simulation)

Ptot (W)

60
55
50
45
40
35
30
25
20
15
10
5

Vs= 13.2V
RL=4 x 4 Ohm

25

GAUSSIAN NOISE

CLIP START

20
15
10
5

3
Po (W)

Ptot (W)
Vs= 13.2V
RL= 4 x 2 Ohm
GAUSSIAN NOISE

CLIP START

10

Po (W)

APPLICATION HINTS (ref. to the circuit of fig. 1)


SVR
Besides its contribution to the ripple rejection, the
SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role
in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS
MINIMUM RECOMMENDED VALUE IS 10F.

be employed to drive muting and stand-by pins in


absence of true CMOS ports or microprocessors.
R-C cells have always to be used in order to
smooth down the transitions for preventing any
audible transient noises.
About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms.

INPUT STAGE
The TDA7560s inputs are ground-compatible and
can stand very high input signals ( 8Vpk) without
any performances degradation.
If the standard value for the input capacitors
(0.1F) is adopted, the low frequency cut-off will
amount to 16 Hz.

HEATSINK DEFINITION
Under normal usage (4 Ohm speakers) the
heatsinks thermal requirements have to be deduced from fig. 15, which reports the simulated
power dissipation when real music/speech programmes are played out. Noise with gaussiandistributed amplitude was employed for this simulation. Based on that, frequent clipping occurence
(worst-case) will cause Pdiss = 26W. Assuming
Tamb = 70C and TCHIP = 150C as boundary
conditions, the heatsinks thermal resistance
should be approximately 2C/W. This would avoid
any thermal shutdown occurence even after longterm and full-volume operation.

STAND-BY AND MUTING


STAND-BY and MUTING facilities are both
CMOS-COMPATIBLE. If unused, a straight connection to Vs of their respective pins would be admissible. Conventional low-power transistors can

8/10

TDA7560
DIM.
A
B
C
D
E
F (1)
G
G1
H (2)
H1
H2
H3
L (2)
L1
L2 (2)
L3
L4
L5
M
M1
N
O
R
R1
R2
R3
R4
V
V1
V2
V3

MIN.
4.45
1.80
0.75
0.37
0.80
23.75
28.90

22.07
18.57
15.50
7.70
3.70
3.60

mm
TYP.
4.50
1.90
1.40
0.90
0.39
1.00
24.00
29.23
17.00
12.80
0.80
22.47
18.97
15.70
7.85
5
3.5
4.00
4.00
2.20
2
1.70
0.5
0.3
1.25
0.50

MAX.
4.65
2.00

MIN.
0.175
0.070

1.05
0.42
0.57
1.20
24.25
29.30

0.029
0.014
0.031
0.935
1.138

22.87
19.37
15.90
7.95

0.869
0.731
0.610
0.303

4.30
4.40

0.145
0.142

inch
TYP.
0.177
0.074
0.055
0.035
0.015
0.040
0.945
1.150
0.669
0.503
0.031
0.884
0.747
0.618
0.309
0.197
0.138
0.157
0.157
0.086
0.079
0.067
0.02
0.12
0.049
0.019

MAX.
0.183
0.079

OUTLINE AND
MECHANICAL DATA

0.041
0.016
0.022
0.047
0.955
1.153

0.904
0.762
0.626
0.313
0.169
0.173

5 (Typ.)
3 (Typ.)
20 (Typ.)
45 (Typ.)

Flexiwatt25

(1): dam-bar protusion not included


(2): molding protusion included

H
H1

V3

H2

H3

R3

L4

R4
V1
R2

L2

L3

L1

V1

V2

R2

R1
L5

R1

R1
E

G
V

G1

F
M

M1

B
C

V
FLEX25ME

9/10

TDA7560

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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10/10

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