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Seite 1

Mitsubishi Electric Europe B.V. (European Headquarter)


Semiconductor European Business Group
Gothaer Strae 8 D-40880 Ratingen
Phone: +49 (0) 2102/486 0 Fax: +49 (0) 2102/486 7220

Mitsubishi Electric Europe B.V.


German Branch
Semiconductor Sales Office
Gothaer Strae 8
D-40880 Ratingen
Phone: +49 (0) 2102/486 4520
Fax: +49 (0) 2102/486 7220

Mitsubishi Electric Europe


Scandinavian Branch
Semiconductor Sales Office
Hammarbacken 14
S-19127 Sollentuna
Phone: +46 8/6 25 10 00
Fax: +46 8/6 25 10 33

Mitsubishi Electric Europe


French Branch
Semiconductor Sales Office
25, Boulevard des Bouvets
F-92741 Nanterre Cedex
Phone: +33 1/55 68 55 68
Fax: +33 1/55 68 57 39

Mitsubishi Electric Europe


Moscow Representative Office
Semiconductor
Kosmodamianskaya Nab. 52 Bld.5
113054 Moscow
Phone: +7 495 721 2070
Fax: +7 495 721 2071

Mitsubishi Electric Europe


UK Branch
Semiconductor
Hatfield, GB-Herts. AL 10 8XB
Phone: +44 1707/21 61 00
Fax: +44 1707/27 89 97

Mitsubishi Electric Europe


Spanish Representative Office
C/ Las Hayas, 127
28922 Alcorcn (Madrid)
Phone: +34 916 436 805

Selection Guide 2009

27.04.2009

POWER DEVICES

Katalog2009-Umschlag_U1-U4

MITSUBISHI ELECTRIC

Mitsubishi Electric Europe


Italian Branch
Semiconductor Sales Office
Viale Colleoni 7 Palazzo Sirio
Centro Direzionale Colleoni
I-20041 Agrate Brianza (Milano)
Phone: +39 039/60 53 10
Fax: +39 039/60 53 212

www.mitsubishichips.eu www.mitsubishichips.com semis.info@meg.mee.com

POWER DEVICES
Selection Guide 2009

Katalog2009-Umschlag_U1-U4

27.04.2009

10:00 Uhr

Seite 2

Mitsubishi Electric
Environmental Vision 2021
Climate protection is a major issue worldwide and will
have a significant impact on our future. The goals for
the reduction of climatically harmful greenhouse gas
CO2 are laid down in the Kyoto Protocol. Mitsubishi
Electric has had a tradition of reducing CO2 emissions
with advanced technology and highly energy-efficient
products, and is extending this commitment into the
future through its Environmental Initiative.

Authorised Distributors for Mitsubishi Electric Power Semiconductors

The Semiconductor European Business Group of


Mitsubishi Electric is working to realise these goals by
producing electronic devices that are more energy
efficient, while also working to reduce the amount of
lead and other controlled substances being used.
As shown in the chart below power losses have been
already decreased step by step with the introduction
of new Generations of Power Modules.

The Environmental Vision 2021 is Mitsubishi


Electrics long-range vision for environmental
management, which looks towards the year 2021
as the 100th anniversary of the companys founding
by which to achieve specific and meaningful results.
Based on the principle of Making Positive
Contributions to the Earth and its People through
Technology and Action, the Vision defines a set of
initiatives for realising a sustainable, recycling-based
global society through application of the companys
broad range of high-level technologies and the
actions of its global workforce of talented individuals.
Environmental Vision 2021 commits Mitsubishi
Electric to deliver the following by 2021:
Reduction of CO2 emissions
Sustain resource cycle by Reducing, Reusing and
Recycling (3Rs)
Run educational/leadership training for employees
and children to nurture environmental awareness

Poland

GLYN POLAND

Ul. Krupnicza 13, PL-50075 Wroclaw


 +48 71 78 28 75 8, Fax: +48 71 78 28 75 9

Email: sales@glyn.pl
www.glyn.pl

Portugal

KTS (KEY TECHNOLOGIES


AND SUPPORT, LDA)

Urbanizaao Varandas de Monsanto


Praa Carlos Aboim Inglez, lote 8 - Loja Esq.
2610-287 Alfragide
 +351 21 472 73 90, Fax: +351 21 472 73 99

E-mail: KTS.lda@mail.telepac.pt
www.KTS.pt

Romania

S.C. SOFTRONIC SRL

Str. Unirii, Nr. 37, Dolj, Craiova


 +40 251 41 48 22, Fax: +40 251 41 78 11

dragos.voicu@softronic.ro
www.softronic.ro

S.C. VITACOM ELECTRONICS


SRL

Buna Ziua St. FN, RO-400495, Cluj-Napoca


 +40 264 43 84 02, Fax: +40 264 43 84 00

Email: industrie@vitacom.ro
www.vitacom.ro

BOR&S ELECTRONICS LTD

Rogozhny Val 3/58, RU-109544 Moscow


 +7 495 27 80 068, Fax: +7 495 27 80 068

Email: sales@belgroup.com
www.belgroup.com

DIAL ELECTROLUX LTD

BP Greenwood bld. 17, Krasnogorskiy district


RU-143441 Moscow Putilkovo
 +7 495 995 20 20, Fax: +7 495 739 55 33

Email: sales@dialelectrolux.ru
www.dialelectrolux.ru

PLATAN COMPONENTS

40-1, BlD. 2, Ivana Franko Str., RU-121351 Moscow


 +7 495 97 000 99, Fax: +7 495 73 75 999

Email: platan@aha.ru
www.platan.ru

SYMMETRON ELEKTRONIC
COMPONENTS

Tallinskaya St. 7, RU-195196 St. Petersburg


 +7 812 449 40 09, Fax: +7 812 449 40 15

Email: svor@symmetron.ru
www.symmetron.ru

Slovakia

3Q SERVICE LTD

Hollho 59 / P.O.Box 66, SK-01008 Zilina


 +421 41 56 26 291, Fax: +421 41 56 26 315

Email: pobuda@trikve.sk
www.trikve.sk

Spain

AICOX SOLUCIONES SA

Avda. Somosierra, 12, 1A,


E-28709 San Sebastian de los Reyes
 +34 91 65 92 970, Fax: +34 91 65 31 019

Email: informa@aicox.com
www.aicox.com

INELEC SA

Bocangel, 38, E-28028 Madrid


 +34 91 726 35 00, Fax: +34 91 726 33 34

Email: inelec@inelec.net
www.inelec.net

RICHARDSON ELECTRONICS
IBRICA SA

Calle Hierro, 1a Planta Nave 10 Edificio Legazpi


E-28045 Madrid
 +34 91 528 37 00, Fax: +34 91 467 54 68

Email: fernando@rell.com
www.rell.com

GLYN SWEDEN

Tammsvg 13, SE-81576 Sderfors


 +46 (0) 293 300 86, Fax: +46 (0) 293 300 87

E-Mail: sales@glyn.se
www.glyn.se

RICHARDSON ELECTRONICS
NORDIC AB

Girovgen 13, S-17562 Jrflla


 +46 8 564 70 590, Fax: +46 8 760 46 63

Email: stefan@rell.com
www.rell.com

ELEKTRON AG

Riedhofstr. 11, CH-8804 Au (Zrich)


 +41 (0) 44 781 01 11, Fax: + 41 (0) 44 781 06 04

Email: info@elektron.ch
www.elektron.ch

GLYN SWITZERLAND

Bachweg 3, CH-8133 Esslingen


 +41 (0) 44 944 55 00, Fax: +41 (0) 44 944 55 09

Email: sales@glyn.ch
www.glyn.ch

Turkey
and Egypt

OHM ELEKTRONIK VE
TICARET LTD STI

Kemeralti Cad. Ada Han No. 87


5 Tophane, TR-80030 Istanbul
 +90 212 292 05 90, Fax: +90 212 244 27 72

Email: teokay@ohm.com.tr
www.ohm.com.tr

Ukraine

DACPOL UKRAINE

Snovskaya str. 20, 02090 Kiev, Ukraine


 +380 44 501 93 44, Fax: +380 44 502 64 87

Email: kiev@dacpol.com
www.dacpol.ua

SYMMETRON UKRAINE

Raskovoy M. Str. 13, 02660 Kiev, Ukraine


 +380 44 239 2065, Fax: +380 44 239 2069

Email: ec@symmetron.ua
www.symmetron.ua

JOHN G. PECK

B1 Wymeswold Industrial Park, Wyemswold Road


Burton on the Wolds, Loughborough, Leics. LE12 5TY
 +44 1509 88 10 10, Fax: +44 1509 88 16 88

Email: info@jgpl.com
www.jgpl.com

Russia

Every day, the Mitsubishi Electric Group as a whole


makes a positive contribution to realising its
Environmental Vision 2021 through its products,
activities and technologies.
Sweden

Switzerland

United Kingdom

79

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Seite 3

Mitsubishi Electric
Global Leader in Semiconductor Technology
Global Leader in Semiconductor Technology
Mitsubishi Electric belongs to the world leading
companies in Manufacturing, Marketing and Sales of
electrical and electronic products. The Semiconductor
European Business Group is operating all sales and
export activities for Western and Eastern Europe,
Russia and South Africa from its headquarters in
Ratingen in North Rhine-Westphalia, Germany.
Semiconductors are indispensable components for
todays increasingly high performance products,
making them vital for an advancing future. Being the
quality and innovation leader in many fields, Mitsubishi
Electric plays a major role in the semiconductor
industry. State-of-the-art technology, modern and
high capacity production lines are the key factors to
maintain this leading position. Our customers benefit
from extensive technical support as well as a
widespread sales and distribution network.
Our success is contributed by three divisions:
High Frequency-, Power- and Opto-Semiconductors.
With regarding quality and reliability as our core
values, Mitsubishi Electric Europe B.V. has achieved
ISO 9001 certification continuously since 1995.
Mitsubishi Electric is the first company in Japan, who
received the International Railway Industry Standard
(IRIS) certification in March 2009. The successful
award of IRIS certification reinsures Mitsubishi
Electrics high-quality, certified products and services
for the railway industry.
Power Semiconductors Core Capabilities
Mitsubishi has more than 40 years experience in
developing and producing power semiconductors.
It has been successfully directed the development of
power semiconductor devices starting from current
controlled GTO and Bipolar Darlington transistor
to the first voltage controlled IGBT. With its constant
innovative research and development in this field,
Mitsubishi Electric has secured its top position.

As the first company worldwide Mitsubishi Electric,


which mastered all required techniques in chip and
package technologies, developed the concept of the
Intelligent Power Module (IPM). IPM concept is widely
accepted on the market, making Mitsubishi Electric
market leader in this field. An integrated solution of
inverter, driver and protection circuit reduce the size,
cost and development time of the system.
Well proved CSTBT (Carrier Stored Trench Bipolar
Transistor) chip technology for IGBT (Insulated Gate
Bipolar Transistor) shows better trade-off of
saturation voltage and turn-off losses providing
suitable modules for a broad spectrum of application
fields including motor control, traction, elevators,
welding, UPS, white goods, pumps and medical
technology. Dedicated IGBT & IPM modules have
also attracted new fields such as renewable energy
applications such as wind and solar energy.
Mitsubishi Electric power semiconductors ensure
greater efficiency and lower power consumption.
With better process and chip technology, the highest
level of reliability is achieved in high voltage IGBT
modules used for traction applications.
The market trend towards more compact modules
with high efficiency has been continuously pursued
by Mitsubishi Electric. At present some 2 million
DIPIPMTM modules are manufactured and tested for
100% functionality per month. The compact package
of Mini-DIP and Super Mini-DIP proved cost effective
products for white goods applications. Newly
introduced Single chip Inverter is the smallest inverter
(17.5 X 11.93 mm), which reduces the PCB size
making attractive for dish washers and air
conditioning applications.
Through eco-products (RoHS confirmed), environmental technologies and activities, Mitsubishi Electric
is working together with its global business partners,
to make the world a better place to live. A future
aim of Mitsubishi Electric emphasizes on the best
utilization and development of new materials and
process to offer miniature products at an affordable
price with environmental features.

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Seite 4

CONTENTS
1

IGBT Modules

IPM (Intelligent Power Modules)

DIPCIBTM Modules (Dual-in-line Package Converter-Inverter-Brake)

MOSFET Modules

High Power Devices

Single Chip Inverter

High Voltage Integrated Circuits

Power Loss Calculation Tool (MELCOSIM)


4

MITSUBISHI ELECTRIC EUROPE B.V.

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Seite 5

1.
1.01
1.02
1.03
1.04
1.05
1.06
1.07

IGBT Modules
Ordering Information for Mitsubishi IGBT Modules . . . . . . . . . . . . . . . . . . . .
Overview of IGBT Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6th Generation IGBT Modules (NX-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mega Power Dual IGBT Modules (with 6th Gen. IGBT Chips) . . . . . . . . . . . .
5th Generation IGBT Modules (A-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5th Generation IGBT Modules (NF-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Frequency IGBT Modules (NFH-Series) . . . . . . . . . . . . . . . . . . . . . . . .

2.
2.01
2.02
2.03
2.04
2.05
2.06
2.07
2.08
2.09
2.10
2.11

IPM (Intelligent Power Modules)


Ordering Information for Mitsubishi IPMs . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Overview of IPM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5th Generation Full Gate CSTBTTM IPMs (L1 & S1-Series) . . . . . . . . . . . . . . . 26
5th Generation CSTBTTM IPMs (L-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5th Generation IPMs for Photovoltaic Application . . . . . . . . . . . . . . . . . . . . . 33
3rd Generation IPMs (S-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3rd Generation IPMs (V-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Overview of DIPIPMTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
1200V DIPIPMTM (Dual-in-line Package Intelligent Power Modules) . . . . . . . 46
600V DIPIPMTM (Dual-in-line Package Intelligent Power Modules) . . . . . . . . . 48
DIPPFCTM (Dual-in-line Package Power Factor Correction) . . . . . . . . . . . . . . 55

3.

DIPCIBTM Modules (Dual-in-line Package Converter-Inverter-Brake) . . . . . . 57

4.

MOSFET Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

5.
5.01
5.02
5.03

High Power Devices


High Voltage IGBT Modules (HV-IGBT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
High Voltage Diode Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
High Voltage Intelligent Power Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

6.

Single Chip Inverter (M81500FP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

7.

High Voltage Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

8.

Power Loss Calculation Tool (MELCOSIM) . . . . . . . . . . . . . . . . . . . . . . . . 77

7
8
10
12
14
17
21

1
2
3
4
5
6
7
8

Authorised Distributors for Mitsubishi Electric Power Semiconductors . . . . 78


All contents and specifications are subject to modifications and amendments without notice. May 2009.

Katalog2009-Innenteil_S3-78

Symbols
VCES
IC
VCES(sat)

Seite 6

Description
Maximum collector emitter sustain voltage
Collector current
Collector emitter saturation voltage
Input capacitance

Coes

Output capacitance

Cres

Reverse transfer capacitance

td(on)

Turn-on delay time

td(off)
tf
ton
tc(on)
toff

Turn-on rise time


Turn-off delay time
Turn-off fall time
Turn-on time
Turn-on crossover time
Turn-off time

tc(off)

Turn-off crossover time

Vf

Diode forward voltage

Qrr

Diode reverse recovery charge

trr

Diode reverse recovery time

Rth(j-c)

Thermal resistance junction to case

Rth(c-f)

Contact thermal resistance case to heat sink

Viso

Isolation voltage

VDSS

Maximum drain source sustain voltage

ID(rms)

Maximum RMS drain current

rDS(on)

Drain source on-state resistance

VSD

Reverse diode forward voltage

EON

Turn-on switching energy

EOFF

Turn-off switching energy

fc(typ)

Recommended typical PWM frequency

fc / fPWM

Maximum PWM frequency

tDEAD

Minimum dead time

VRRM

Repetitive peak reverse voltage

If
IFSM

9:51 Uhr

Cies

tr

27.04.2009

Diode forward current


Diode surge forward current

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Seite 7

1.01
Ordering Information for Mitsubishi IGBT Modules
NX Series
NX-Series is the latest development of Mitsubishi
Electrics state of the art 6th Generation Carrier
Stored Trench Gate Biploar Transistor (CSTBTTM)
IGBT and diode chip technology, offering flexible
package concept using common platform for
singles, dual, six- and seven-packs and CIB
(Converter-Inverter-Brake). The comprehensive
line-up in 600V, 1200V and 1700V NX-Series is
UL approved and ensures 175C as Tj(max).

IGBT

IC = 150A

Internal Connection:
H

= Single IGBT Module

= Dual IGBT Module

= H-Bridge IGBT Module

= Sixpack IGBT Module

Mega Power Dual


(with 6th Generation IGBT Chips)

= Sevenpack IGBT Module

Mega Power Dual combines advantages of new


6th Generation CSTBTTM IGBT chip performance and
mechanical package structure for easy assembly.
1200V and 1700V line-ups are available.

E2 = Chopper IGBT Module

NF- and A-Series

E3 = Chopper IGBT Module


E4 = Chopper IGBT Module

Combining 5 Generation Carrier Stored Trench


Gate Bipolar Transistor (CSTBTTM) chip technology
with a Light Punch-through (LPT) wafer, low VCE(sat),
high short circuit robustness and reduced gate
capacitance are achieved.

Package Style:

th

NFH-Series
combines CSTBTTM chip technology with adopted
lifetime control providing excellent switching losses
optimised for high frequency switching at 50kHz.
6

VCES:
5

= 250V

12

= 600V

24

= 1200V

28

= 1400V

34

= 1700V

50

= 2500V

66

= 3300V

90

= 4500V

130 = 6500V

Chip Technology:
NX

= 6th Generation

NF/A

= 5th Generation

NFH

= 5th Generation
(Trench High Frequency)

Example:
CM

150

24

NF

6
7

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Seite 8

1.02
Overview of IGBT Modules

NX-Series
NX-Series
CIB
1200V

1200V/
35A-100A

NX-Series
Dual
1200/1700V

NX-Series
6-pack
1200/1700V

NX-Series
7-pack
1200/1700V

1200V/
200A-1000A
1700V/
150A-600A

1200V/
75A-150A
1700V/
50A-100A

1200V/
75A-150A
1700V/
50A-75A

Mega Power Dual


MPD
Dual
1200/1700V

1200V/
1500A & 2500A
1700V/
1100A & 1800A

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Seite 9

Overview of IGBT Modules

A-Series
A-Series
Single
1200/1700V

A-Series
Dual
1200/1700V

1200V/400A-600A
1700V/500A

1200V/100A-600A
1700V/75A-400A

NF-Series
NF-Series
Dual
600/1200/1700V

NF-Series
6-pack
600/1200V

NF-Series
7-pack
600/1200V

600V/150A-600A
1200V/75A-1400A
1700V/1000A

600V/75A-200A
1200V/50A-200A

600V/75A-200A
1200V/50A-200A

NFH-Series (High Frequency)


NFH-Series
Dual
600/1200V

600V/100A-400A
1200V/100A-600A

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Seite 10

1.03
6th Generation IGBT Modules (NX-Series)

Applications

General Purpose Drives


Photovoltaic Inverters
UPS

Features
6th Generation IGBT with CSTBTTM Chip Technology
For 1200V modules: VCE(sat) = 1.7V(typ) @ Tj = 125C;
wide SOA @ Vcc = 900V
For 1700V modules: VCE(sat) = 2.2V(typ) @ Tj = 125C;
wide SOA @ Vcc = 1200V
More than 10s short circuit capability and excellent paralleling
characteristics
6th Generation Free Wheel Diode Chip with positive temperature
coefficient and optimised trade-off between VF and Esw(rec)
Tj(max) = 175C
High flexibility by using one common platform design for single,
dual, six- and seven-packs and CIB (converter-inverter-brake)
Variety of pin terminals and different sizes of screw terminals
Solderless contacts on demand
Comprehensive line-up in 600V, 1200V, 1700V
UL certification
Entirely RoHS compliant

10

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Seite 11

6th Generation IGBT Modules (NX-Series)

Basic Package Concept of NX-Series

CIB

Progress of 1200V CSTBTTM Technology

7 pack

5th Gen. CSTBT

6th Gen. CSTBT

Emitter electrode
P base

Common
platform

N emitter

(Basic structure)
Trench gate
N+ carrier
stored layer

Dummy
trench

Single

N- layer

Dual

N+ buffer layer
P+ collector

5th Generation IGBT

6th Generation IGBT

(A-, NF-Series)

(NX-Series)

Line-up 6th Generation NX-Series (1200V)*


Package
Current

NX-M
CIB

NX-L

7in1

6in1

35

CM35MXA-24S

50

CM50MXA-24S

75

CM75MXA-24S

CM75RX-24S

CM75TX-24S

100

CM100MXA-24S

CM100RX-24S

CM100TX-24S

CM150RX-24S

CM150TX-24S

150

2in1

200

CM200DX-24S

300

CM300DX-24S

450

CM450DX-24S

2in1

600

CM600DXL-24S

1000

CM1000DXL-24S

Line-up 6th Generation NX-Series (1700V)*


Package
Current

NX-M
CIB

NX-L

7in1

6in1

50

CM50RX-34S

CM50TX-34S

75

CM75RX-34S

100

2in1

2in1

CM75TX-34S
CM100TX-34S

150

CM150DX-34S

200

CM200DX-34S

300

CM300DX-34S

400

CM400DXL-34S

600

CM600DXL-34S

*under development

11

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Seite 12

1.04
Mega Power Dual IGBT Modules
(with 6th Gen. IGBT Chips)

Application

High Power Energy Conversion

Features
6th Generation IGBT with CSTBTTM Chip Technology
For 1200V modules: VCE(sat) = 1.7V(typ) @ Tj = 125C;
wide SOA @ Vcc = 900V
For 1700V modules: VCE(sat) = 2.2V(typ) @ Tj = 125C;
wide SOA @ Vcc = 1200V
Tj(max) = 175C
New solderless Al-baseplate > high Tc temperature cycling capability
Wide internal chip layout > low Rth(j-f)
Minimized internal package inductance Lint < 10nH (package size B)
AC and DC main terminals separated > easy DC-bus design
Multi-hole main terminals > low contact resistance and reliable long-term
electrical connection
Integrated NTC for Tc-sensing
Auxiliary C-terminals available for P- and N-side IGBT

12

For
ower Dual
P
a
Meg
s (NF-Series)
IGBT Module fer to
please re
page 17/18

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1.04

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Seite 13

Mega Power Dual IGBT Modules (with 6

th

Gen. IGBT Chips)

Line-up
Package
Symbol

Circuit
Diagram

Size
VCES
(V)

B
IC (A)

1100

1200

1500

1800

CM1500DY-24S

2500

CM2500DY-24S

1700

CM1100DY-34S

CM1800DY-34S

under development
Large Package Type (L 310 x W 142 x H 50mm)

Small Package Type (L 194 x W 142 x H 50mm)

Tentative!

Tentative!

Notes

13

Katalog2009-Innenteil_S3-78

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9:51 Uhr

Seite 14

1.05
5th Generation CSTBTTM IGBT Modules (A-Series)
Features
Combining 5th Generation CSTBTTM
(Carrier Stored Trench Gate Bipolar
Transistor) chip technology with a
LPT (Light Punch-through) wafer for:
Low VCE(sat)
High Short Circuit Robustness
Reduced Gate Capacitance
About 10% higher inverter output current and about
15% better performance T(j-f) at same inverter
output current than other Trench IGBTs currently
being marketed
Cost optimised package sizes
Excellent thermal conductivity by AIN isolation
substrate
Low internal inductance

14

Significant improvement of power cycling


capability by new wire bonding technology

Katalog2009-Innenteil_S3-78

27.04.2009

9:51 Uhr

Seite 15

5th Generation CSTBTTM IGBT Modules (A-Series)

1.05

Line-up A-Series
Symbol

Circuit
Diagram

IC (A)

VCES
(V)

75

100

150

200

300

400

1200

500

600
CM600HA-24A
CM600HB-24A

CM400HA-24A

H
1700

CM500HA-34A

1200

CM100DY-24A CM150DY-24A CM200DY-24A CM300DY-24A CM400DY-24A

1700

CM75DY-34A CM100DY-34A CM150DY-34A CM200DY-34A CM300DY-34A CM400DY-34A

CM600DY-24A

Maximum Ratings
Type Number

VCES
(V)

IC
(A)

Viso
(V)

Free Wheel Diode

Electrical Characteristics
VCE(sat)
@ Tj = 25C Cies
(V)
(nF)

Coes
(nF)

Cres
(nF)

Typ. Max.

Maximum Switching Times


td(on)
(ns)

tr
(ns)

td(off)
(ns)

tf
(ns)

Thermal & Mechanical


Characteristics

Vf
Qrr
trr
IGBT
(V) (C) (ns) Rth(j-c)
Max. Typ. Max. (C/W)

Diode
Rth(j-c) Rth(c-f)
(C/W) (C/W)

PackageNo.

1200 Volt Dual IGBT Modules A-Series


CM100DY-24A

1200 100

2.1

3.0

17.5

1.5

0.34

100

70

400

350

3.8

5.0

150

0.186

0.34

0.022

A1

CM150DY-24A

1200 150

2.1

3.0

23.0

2.0

0.45

130

100

450

350

3.8

6.0

150

0.130

0.23

0.022

A1

CM200DY-24A

1200 200

2.1

3.0

35.0

3.0

0.68

130

100

450

350

3.8

9.0

150

0.093

0.17

0.022

A1

CM300DY-24A

1200 300

2.1

3.0

47.0

4.0

0.90

550

180

600

350

3.8

9.0

250

0.066

0.12

0.020

A2

CM400DY-24A

1200 400

2.1

3.0

70.0

6.0

1.40

550

180

600

350

3.8

16.0 250

0.046

0.085

0.020

A3

CM600DY-24A

1200 600

2.1

3.0

94.0

8.0

1.80

660

190

700

350

3.8

19.0 250

0.034

0.062

0.018

A3

1200 Volt Single IGBT Modules A-Series


CM400HA-24A

1200 400

2.1

3.0

70

1.40

550

180

600

350

3.8

14.7 250

0.053

0.085

0.020

A4

CM600HA-24A

1200 600

2.1

3.0

105

2.00

660

190

700

350

3.8

19.0 250

0.034

0.051

0.020

A4

CM600HB-24A

1200 600

2.1

3.0

105

2.00

660

190

700

350

3.8

19.0 250

0.034

0.051

0.020

A5

1700 Volt Dual IGBT Modules A-Series


CM75DY-34A

1700

75

3500

2.2

2.8

18.5

2.1

0.4

200

150

550

350

3.0

7.5

300

0.160

0.29

A1

CM100DY-34A

1700 100 3500

2.2

2.8

24.7

2.8

0.5

200

150

550

350

3.0

10

300

0.130

0.21

A1

CM150DY-34A

1700 150 3500

2.2

2.8

37.0

4.2

0.8

550

190

750

350

3.0

15

450

0.078

0.15

A2

CM200DY-34A

1700 200 3500

2.2

2.8

49.4

5.6

1.1

550

190

750

350

3.0

20

450

0.063

0.11

A2

CM300DY-34A

1700 300 3500

2.2

2.8

74.0

8.4

1.6

600

200

850

350

3.0

30

450

0.043

0.072

A3

CM400DY-34A

1700 400 3500

2.2

2.8

98.8 11.2

2.1

800

230

1000

350

3.0

40

500

0.033

0.055

A6

3.2

50

650

0.025

0.042

A4

1700 Volt Single IGBT Modules A-Series


CM500HA-34A

1700 500 3500

2.2

2.8

120

14

2.6 900.0

500

1200

250

15

Katalog2009-Innenteil_S3-78

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27.04.2009

9:51 Uhr

Seite 16

5th Generation CSTBTTM IGBT Modules (A-Series)

Package A1

Package A2

Package A3

Package A4

Package A5

Package A6

Dimensions in mm

16

Katalog2009-Innenteil_S3-78

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9:51 Uhr

Seite 17

1.06
5th Generation CSTBTTM IGBT Modules (NF-Series)

Features
Combining 5th Generation CSTBTTM (Carrier Stored
Trench Gate Bipolar Transistor chip technology with
a LPT (Light Punch-through) wafer for:
Low VCE(sat)
(Typ. 1.7V @ Tj = 125C for 600V and
2V @ Tj = 125C for 1200V)
High Short Circuit Robustness
Reduced Gate Capacitance

Standard dual package equal to well


accepted H-Series package
Excellent thermal conductivity by
AIN isolation substrate
Low internal inductance (half of H-Series)
Significant improvement of power cycling capability
by new wire bonding technology
Also available as Mega Power Dual IGBT Modules
1200V (900 & 1400A) and 1700V (1000A) for
High Power UPS, Distributed Power Generation
and General Purpose Inverters
(Chopper modules on request)

17

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9:51 Uhr

Seite 18

5th Generation CSTBTTM IGBT Modules (NF-Series)

Line-up NF-Series
Symbol

IC (A)

VCES
(V)

Circuit Diagram

50

75

100

600

150

200

CM150DY-12NF

CM200DY-12NF

1200

CM75DY-24NF

CM100DY-24NF

CM150DY-24NF

CM200DY-24NF

600

CM75TL-12NF

CM100TL-12NF

CM150TL-12NF

CM200TL-12NF

CM75TL-24NF

CM100TL-24NF

CM150TL-24NF

CM200TL-24NF

CM75RL-12NF

CM100RL-12NF

CM150RL-12NF

CM200RL-12NF

CM50RL-24NF

CM75RL-24NF

CM100RL-24NF

CM150RL-24NF

CM200RL-24NF

1000

1400

T
1200

CM50TL-24NF

600
R
1200

1
Symbol

VCES

Circuit
Diagram

IC (A)

(V)

300

400

600

600

CM300DY-12NF

CM400DY-12NF

CM600DY-12NF

1200

CM300DY-24NF

CM400DY-24NF

CM600DU-24NF

900

CM900DU-24NF*

1700

CM1400DU-24NF*

CM1000DU-34NF*

*Mega Power Dual IGBT Modules (NF-Series)


Maximum
Ratings
Type Number

VCES
(V)

IC
(A)

Electrical Characteristics
VCE(sat)
@ Tj = 25C
(V)
Typ.

Cies
(nF)

Coes
(nF)

Cres
(nF)

Max.

Free Wheel Diode

Maximum Switching Times


td(on)
(ns)

tr
(ns)

td(off)
(ns)

tf
(ns)

Thermal & Mechanical


Characteristics

Vf
(V)

Qrr
(C)

trr
(ns)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c) Rth(c-f)
(C/W) (C/W)

PackageNo.

600 Volt Dual IGBT Modules NF-Series


CM150DY-12NF

600

150

1.7

2.2

23.0

2.8

0.9

120

100

300

300

2.6

2.5

150

0.21

0.47

0.07

NF1

CM200DY-12NF

600

200

1.7

2.2

30.0

3.7

1.2

120

120

300

300

2.6

3.5

150

0.19

0.35

0.07

NF1

CM300DY-12NF

600

300

1.7

2.2

45.0

5.5

1.8

120

120

350

300

2.6

5.5

150

0.16

0.25

0.07

NF1

CM400DY-12NF

600

400

1.7

2.2

60.0

7.3

2.4

300

200

450

300

2.6

6.8

250

0.11

0.19

0.04

NF2

CM600DY-12NF

600

600

1.7

2.2

90.0

11.0

3.6

500

300

750

300

2.6

8.7

250

0.11

0.18

0.02

NF3

600 Volt IGBT Modules NF-Series (6 in 1)

18

CM75TL-12NF

600

75

1.7

2.2

11.3

1.4

0.45

120

100

300

300

2.6

1.2

100

0.29

0.51

NF4

CM100TL-12NF

600

100

1.7

2.2

15.0

1.9

0.60

120

100

300

300

2.6

2.1

120

0.23

0.41

NF4

CM150TL-12NF

600

150

1.7

2.2

23.0

2.8

0.90

120

100

300

300

2.6

2.5

150

0.17

0.31

NF4

CM200TL-12NF

600

200

1.7

2.2

30.0

3.7

1.20

120

100

300

300

2.6

4.8

150

0.14

0.22

NF5

Katalog2009-Innenteil_S3-78

1.06

27.04.2009

9:51 Uhr

5th Generation CSTBTTM IGBT Modules (NF-Series)


Maximum Ratings

Type Number

Seite 19

VCES
(V)

IC
(A)

Viso
(V)

VCE(sat)
@ Tj = 25C Cies
(nF)
(V)
Typ.

Max.

Electrical Characteristics
Free Wheel Diode Thermal & Mechanical
Characteristics
Maximum
Switching
Times
Vf
Qrr
trr
Coes Cres
Diode
IGBT
(V) (C) (ns) R
tr
td(off)
tf
(nF) (nF) td(on)
Rth(j-c) Rth(c-f)
th(j-c)
Typ.
Typ.
Max.
(ns) (ns) (ns) (ns)
(C/W) (C/W) (C/W)

PackageNo.

600 Volt IGBT Modules NF-Series (7 in 1)


CM75RL-12NF

600

75

1.7

2.2

11.3

1.4

0.45

120

100

300

300

2.6

1.2

100

0.29

0.51

NF4

CM100RL-12NF

600

100

1.7

2.2

15.0

1.9

0.60

120

100

300

300

2.6

2.1

120

0.23

0.41

NF4

CM150RL-12NF

600

150

1.7

2.2

23.0

2.8

0.90

120

100

300

300

2.6

2.5

150

0.17

0.31

NF4

CM200RL-12NF

600

200

1.7

2.2

30.0

3.7

1.20

120

100

300

300

2.6

4.8

150

0.14

0.22

NF5

1200 Volt Dual IGBT Modules NF-Series


CM75DY-24NF

1200

1.8

2.5

17.5

1.5

0.3

120

100

450

350

3.0

6.0

120

0.290

0.470

0.020

NF1

CM100DY-24NF

1200 100

75

2500

1.8

2.5

23.0

2.0

0.45

120

80

450

350

3.2

5.0

150

0.190

0.350

0.070

NF1

CM150DY-24NF

1200 150

1.8

2.5

35.0

3.0

0.68

120

80

450

350

3.2

7.5

150

0.160

0.250

0.070

NF1

CM200DY-24NF

1200 200

1.8

2.5

47.0

4.0

0.9

500

150

600

350

3.2

7.5

250

0.110

0.190

0.040

NF2

CM300DY-24NF

1200 300

1.8

2.5

70.0

6.0

1.4

500

150

600

350

3.2

13.0 250

0.110

0.180

0.020

NF3

CM400DY-24NF

1200 400

1.8

2.5

94.0

8.0

1.8

600

160

700

350

3.2

16.0 250

0.085

0.150

0.020

NF3

CM600DU-24NF

1200 600

1.95 2.65 140.0 12.0

2.7

800

180

900

350

3.34 28.0 300

0.060

0.110

0.019

NF6

CM900DU-24NF

1200 900

1.8

2.5 140.0 16.0

3.0

600

200

800

300

3.4

50.0 500

0.049

0.078

0.016

MPD1

CM1400DU-24NF 1200 1400

1.8

2.5 220.0 25.0

4.7

800

300

1000

300

3.4

90.0 700

0.032

0.053

0.016

MPD1

3.0

90.0 450

0.014

0.023

0.016

MPD1

1700 Volt Dual IGBT Modules NF-Series


CM1000DU-34NF 1700 1000

2.2

2.8 220.0 25.0

4.7

600

150

900

200

1200 Volt IGBT Modules NF-Series (6 in 1)


CM50TL-24NF

1200

50

2.1

3.0

8.5

0.75 0.17

100

50

300

350

3.8

2.0

100

0.32

0.43

NF4

CM75TL-24NF

1200

75

2.1

3.0

11.5 1.00 0.23

100

50

300

350

3.8

3.0

120

0.24

0.36

NF4

CM100TL-24NF

1200 100

2.1

3.0

17.5 1.50 0.34

100

70

300

350

3.8

4.8

150

0.20

0.28

NF4

CM150TL-24NF

1200 150

2.1

3.0

23.0 2.00 0.45

130

70

400

350

3.8

5.8

150

0.14

0.23

NF5

CM200TL-24NF

1200 200

2.1

3.1

35.0 3.00 0.68

130

70

400

350

3.8

9.0

150

0.11

0.17

NF5

CM50RL-24NF

1200

50

2.1

3.0

8.5

0.75 0.17

100

50

300

350

3.8

2.0

100

0.32

0.43

NF4

CM75RL-24NF

1200

75

2.1

3.0

11.5 1.00 0.23

100

50

300

350

3.8

3.0

120

0.24

0.36

NF4

CM100RL-24NF

1200 100

2.1

3.0

17.5 1.50 0.34

100

70

300

350

3.8

4.8

150

0.20

0.28

NF4

CM150RL-24NF

1200 150

2.1

3.0

23.0 2.00 0.45

130

70

400

350

3.8

5.8

150

0.14

0.23

NF5

CM200RL-24NF

1200 200

2.1

3.1

35.0 3.00 0.68

130

70

400

350

3.8

9.0

150

0.11

0.17

NF5

1200 Volt IGBT Modules NF-Series (7 in 1)

Package NF1

Package NF2

19

Katalog2009-Innenteil_S3-78

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9:52 Uhr

Seite 20

5th Generation CSTBTTM IGBT Modules (NF-Series)

Package NF3

Package NF4

Package NF5

Package NF6

Package MPD1

Notes

Dimensions in mm

20

Katalog2009-Innenteil_S3-78

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9:52 Uhr

Seite 21

1.07
High Frequency IGBT Modules (NFH-Series)
Features
Super low turn-off switching losses by combining
Carrier Stored Trench Gate Bipolar Transistor
(CSTBTTM) chip technology with adopted lifetime
control
Optimised for high frequency switching at 50kHz
Excellent performance also in soft switching
applications (resonant mode)
Low internal inductance package
Significant improvement of power cycling capability

Line-up NFH-Series
Symbol

Circuit
Diagram

VCES
(V)

100

150

200

IC (A)
300

400

600

CM100DUS-12F

CM150DUS-12F

CM200DU-12NFH

CM300DU-12NFH

CM400DU-12NFH

1200

CM100DU-24NFH

CM150DU-24NFH

CM200DU-24NFH

CM300DU-24NFH

CM400DU-24NFH

600

CM600DU-24NFH

21

Katalog2009-Innenteil_S3-78

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27.04.2009

9:52 Uhr

Seite 22

High Frequency IGBT Modules (NFH-Series)


Maximum
Ratings

Type Number
VCES
(V)

IC
(A)

Electrical Characteristics
VCE(sat)
@ Tj = 25C Cies
(V)
(nF)

Coes
(nF)

Cres
(nF)

Typ. Max.

Free Wheel Diode

Maximum Switching Times


td(on)
(ns)

tr
(ns)

td(off)
(ns)

tf
(ns)

Thermal & Mechanical


Characteristics

Vf
(V)

Qrr
(C)

trr
(ns)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c) Rth(c-f)
(C/W) (C/W)

PackageNo.

600 Volt IGBT Modules NFH-Series


CM100DUS-12F

600

100

2.0

2.7

27

1.8

1.0

100

80

300

150

2.6

1.9

150

0.35

0.70

0.07

NFH3

CM150DUS-12F

600

150

2.0

2.7

41

2.7

1.5

120

100

350

150

2.6

2.8

150

0.24

0.47

0.07

NFH3

CM200DU-12NFH

600

200

2.0

2.7

55

3.6

2.0

250

150

500

150

2.6

3.5

150

0.21

0.35

0.07

NFH3

CM300DU-12NFH

600

300

2.0

2.7

83

5.4

3.0

350

150

700

150

2.6

5.5

200

0.16

0.24

0.04

NFH1

CM400DU-12NFH

600

400

2.0

2.7

110

7.2

4.0

400

200

700

150

2.6

7.7

200

0.13

0.18

0.04

NFH1

1200 Volt IGBT Modules NFH-Series

CM100DU-24NFH 1200

100

5.0

6.5

16

1.3

0.3

100

50

250

150

3.5

5.0

150

0.22

0.47

0.07

NFH3

CM150DU-24NFH 1200

150

5.0

6.5

24

2.0

0.45

150

80

400

150

3.5

7.5

150

0.19

0.35

0.07

NFH3

CM200DU-24NFH 1200

200

5.0

6.5

32

2.7

0.6

300

80

500

150

3.5

7.5

250

0.15

0.24

0.04

NFH1

CM300DU-24NFH 1200

300

5.0

6.5

47

4.0

0.9

300

80

500

150

3.5

13.0

250

0.11

0.18

0.04

NFH1

CM400DU-24NFH 1200

400

5.0

6.5

63

5.3

1.2

300

100

500

150

3.5

16.0

250

0.12

0.23

0.02

NFH2

CM600DU-24NFH 1200

600

5.0

6.5

95

8.0

1.8

400

120

700

150

3.5

28.0

250

0.083

0.15

0.02

NFH2

Comparison of Turn-off Waveform

Circuit Diagram

G2
E2

C2E1

E2

C1

E1
G2

22

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Seite 23

High Frequency IGBT Modules (NFH-Series)

Package NFH1

Package NFH2

Package NFH3

Dimensions in mm

23

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9:52 Uhr

Seite 24

2.01
Ordering Information for Mitsubishi IPMs
Information:
The Intelligent Power Module was first developed
and mass-produced by Mitsubishi Electric assuming
the leadership in the industry for this technology.
The reliability of our IPMs is proven since many years
of experience in volume production.

IPM

IC = 300A

Internal Connection:

The latest L1-Series IPM incorporates new full gate


CSTBTTM IGBT chip for loss performance keeping the
mechanical compatibility with existing L-Series IPM
family. It also introduces a new small S package for
600V and 1200V (Reduced package size by 32%
of existing L-Series IPM).

= Single IPM

= Dual IPM

= H-Bridge

= Sixpack IPM

L-Series: Employing 5th Generation Carrier Stored


Trench Gate Bipolar Transistor (CSTBTTM) chip
technology for excellent loss performance. Featuring
on-chip temperature sensing for all IGBT chips.

= Sevenpack IPM

Series Name:

Mitsubishis S-Series has low losses at high


frequencies due to 3rd Generation IGBT chips
(typ. saturation voltage is 1.8V for a 600V device, and
2.3V for a 1200V device).

= S-Series

= V-Series

= L-Series

L1 = L1-Series

V-Series internal inductance was reduced by 50%.


Higher reliability due to solderless connections.
DIP and Mini-DIPIPMs use an ultra compact transfer
mold package and include drive and protection ICs.

S1 = S1-Series

Change of Appearance or Other:


A

VCES:
060 = 600V
120 = 1200V

Example:

24

PM

300

120

Katalog2009-Innenteil_S3-78

27.04.2009

9:52 Uhr

Seite 25

2.02
Overview of IPM

L1-Series / S1-Series
600V/50A-300A

L1-Series

1200V/25A-150A

S1-Series

600V/50A-200A
1200V/25A-100A

L-Series
L-Series

600V/50A-600A
1200V/25A-500A

IPM for Photovoltaic


IPM for
Photovoltaic

600V/
50A75A

S-Series
S-Series

600V/10A-800A
1200V/10A-800A

V-Series
600V/75A-600A

V-Series
1200V/50A-300A

25

Katalog2009-Innenteil_S3-78

27.04.2009

9:52 Uhr

Seite 26

2.03
5th Generation Full Gate CSTBTTM IPMs (L1 & S1-Series)

Applications
UPS, Commercial Air-Conditioner,
General Purpose Drives, Solar Inverter

Features

5th Generation IGBT chip with


Full Gate CSTBTTM resulting low power loss
Better trade off between VCE(sat) and Eoff
Typical VCE(sat) @ 125C: 1.65V (600V) and 1.75V (1200V)
Package compatibility with existing range of
L-Series IPM (Type A, B and C)
New small package for 7 in 1, 50A/600V and
25A/1200V (Reduced package size by 32% of existing
L-Series IPM)
Improved Power cycling capability
Detection, protection and status indication for SC, OT
(with On-chip temperature sensor) & UV
Available from 25A to 150A/1200V
and 50A to 300A/600V
Up to 75A, Solder pin & screw types with same package
foot size
Newly developed L1-Series evaluation board is available
on request

26

Katalog2009-Innenteil_S3-78

27.04.2009

9:52 Uhr

Seite 27

5th Generation Full Gate CSTBTTM IPMs (L1 & S1-Series)

2.03

Line-up L1-Series
Symbol

Internal Function

3 Inverter IGBT
Integrated Gate Drive
SC / OT / UV

3 Inverter IGBT
Integrated Gate Drive
SC / OT / UV

IC (A)

VCES
(V)

25

50

75

100

150

200

300

PM50CL1A060
PM50CL1B060

PM75CL1A060 PM100CL1A060 PM150CL1A060


PM200CL1A060 PM300CL1A060
PM75CL1B060 PM100CL1B060 PM150CL1B060

PM50CL1A120
PM50CL1B120

PM75CL1A120
PM100CL1A120 PM150CL1A120
PM75CL1B120

600

PM50RL1A060
PM50RL1B060
PM50RL1C060

PM75RL1A060 PM100RL1A060 PM150RL1A060


PM200RL1A060 PM300RL1A060
PM75RL1B060 PM100RL1B060 PM150RL1B060

PM25RL1A120
1200 PM25RL1B120
PM25RL1C120

PM50RL1A120
PM50RL1B120

PM75RL1A120
PM100RL1A120 PM150RL1A120
PM75RL1B120

600

1200

PM25CL1A120
PM25CL1B120

Line-up S1-Series
Symbol

Internal Function

3 Inverter IGBT
Integrated Gate Drive
SC / OT / UV

VCES
(V)

IC (A)
25

50

600

75

PM50CS1D060

Structure of L1-series IPM

200

300

PM75CS1D120 PM100CS1D120

SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

Internal configuration L1/S1 series IPM

Full Gate
CSTBTTM

Vcc

150

PM75CS1D060 PM100CS1D060 PM150CS1D060 PM200CS1D060

1200 PM25CS1D120 PM50CS1D120

CLA / RLA types with screw terminals; CLB / RLB types with solder pins

100

Supply
Voltage
Detection

OT

On Chip
Temperature
Detection

UV
In

P Base

n+ emitter
n barred
layer

Fo

Fault Logic
&
input signal
conditioning

multiple gate
drive control:

5th gen.
CSTBTTM

turn on
turn off
SC turn off
keep off

SC

n- layer
n+ buffer layer
p+ substrate
GND

Auxiliary
Emitter
Current
Measurement

E
E

27

Katalog2009-Innenteil_S3-78

2.03

27.04.2009

Type Number
VCES
(V)

IC
(A)

VCE(sat)
@ Tj = 125C
(V)
Max.

Typical Switching Times


ton
(s)

tc(on)
(s)

PM50CL1A060
PM50CL1B060
PM50RL1A060
PM50RL1B060
PM50RL1C060
PM75CL1A060
PM75CL1B060
PM75RL1A060
PM75RL1B060
PM100CL1A060
PM100CL1B060
PM100RL1A060
PM100RL1B060
PM150CL1A060
PM150CL1B060
PM150RL1A060
PM150RL1B060
PM200CL1A060
PM200RL1A060
PM300CL1A060
PM300RL1A060

600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600

50
50
50
50
50
75
75
75
75
100
100
100
100
150
150
150
150
200
200
300
300

1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65
1.65

1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0

0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4

PM25CL1A120
PM25CL1B120
PM25RL1A120
PM25RL1B120
PM25RL1C120
PM50CL1A120
PM50CL1B120
PM50RL1A120
PM50RL1B120
PM75CL1A120
PM75CL1B120
PM75RL1A120
PM75RL1B120
PM100CL1A120
PM100RL1A120
PM150CL1A120
PM150RL1A120

1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200

25
25
25
25
25
50
50
50
50
75
75
75
75
100
100
150
150

1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55

1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0

0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4

PM50CS1D060
PM75CS1D060
PM100CS1D060
PM150CS1D060
PM200CS1D060

600
600
600
600
600

50
75
100
150
200

1.80
1.80
1.80
1.80
1.90

1.8
1.8
1.8
1.8
1.8

1.0
1.0
1.0
1.0
1.0

PM25CS1D120
PM50CS1D120
PM75CS1D120
PM100CS1D120

1200
1200
1200
1200

25
50
75
100

1.65
1.65
1.65
1.65

2.0
2.0
2.0
2.0

1.0
1.0
1.0
1.0

*minimum trip values

Thermal Characteristics

Electrical Characteristics

Typ.

28

Seite 28

5th Generation Full Gate CSTBTTM IPMs (L1 & S1-Series)


Maximum
Ratings

9:52 Uhr

toff
(s)

tc(off)
(s)

trr
(s)

IGBT
Rth(j-c)
(C/W)

600 Volt IPM (L1-Series)


1.0
0.3
0.2
0.44
1.0
0.3
0.2
0.44
1.0
0.3
0.2
0.44
1.0
0.3
0.2
0.44
1.0
0.3
0.2
0.74
1.0
0.3
0.2
0.37
1.0
0.3
0.2
0.37
1.0
0.3
0.2
0.37
1.0
0.3
0.2
0.37
1.0
0.3
0.2
0.32
1.0
0.3
0.2
0.32
1.0
0.3
0.2
0.32
1.0
0.3
0.2
0.32
1.0
0.3
0.2
0.25
1.0
0.3
0.2
0.25
1.0
0.3
0.2
0.25
1.0
0.3
0.2
0.25
1.0
0.3
0.2
0.20
1.0
0.3
0.2
0.20
1.0
0.3
0.2
0.15
1.0
0.3
0.2
0.15
1200 Volt IPM (L1-Series)
2.0
0.7
0.5
0.98
2.0
0.7
0.5
0.98
2.0
0.7
0.5
0.98
2.0
0.7
0.5
0.98
2.0
0.7
0.5
0.70
2.0
0.7
0.5
0.27
2.0
0.7
0.5
0.27
2.0
0.7
0.5
0.27
2.0
0.7
0.5
0.27
2.0
0.7
0.5
0.21
2.0
0.7
0.5
0.21
2.0
0.7
0.5
0.21
2.0
0.7
0.5
0.21
1.0
0.3
0.2
0.19
1.0
0.3
0.2
0.19
1.0
0.3
0.2
0.15
1.0
0.3
0.2
0.15
600 Volt IPM (S1-Series)
2.8
0.6
0.6
0.40
2.8
0.6
0.6
0.33
2.8
0.6
0.6
0.28
2.8
0.6
0.6
0.21
2.8
0.6
0.6
0.18
1200 Volt IPM (S1-Series)
2.8
1.2
0.8
0.27
2.8
1.2
0.8
0.25
2.8
1.2
0.8
0.20
2.8
1.2
0.8
0.18

Protection Functions
PackageNo.

Rth(c-f)
(C/W)

SC*
(A)
Min.

OT
(C)
Min.

UV
(V)
Typ.

0.75
0.75
0.75
0.75
1.28
0.63
0.63
0.63
0.63
0.52
0.52
0.52
0.52
0.41
0.41
0.41
0.41
0.30
0.30
0.23
0.23

0.038
0.038
0.038
0.038
0.09
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.023
0.023
0.023
0.023

100
100
100
100
100
150
150
150
150
200
200
200
200
300
300
300
300
400
400
600
600

135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135

12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12

L1
L2
L1
L2
L5
L1
L2
L1
L2
L1
L2
L1
L2
L1
L2
L1
L2
L3
L3
L3
L3

1.63
1.63
1.63
1.63
1.80
0.47
0.47
0.47
0.47
0.36
0.36
0.36
0.36
0.31
0.31
0.23
0.23

0.038
0.038
0.038
0.038
0.085
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.023
0.023
0.027
0.027

50
50
50
50
50
100
100
100
100
150
150
150
150
200
200
300
300

135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135

12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12

L1
L2
L1
L2
L5
L1
L2
L1
L2
L1
L2
L1
L2
L3
L3
L3
L3

0.68
0.55
0.46
0.35
0.27

0.046
0.046
0.046
0.046
0.046

75
112
150
225
300

135
135
135
135
135

12
12
12
12
12

S1
S1
S1
S1
S1

0.59
0.41
0.32
0.27

0.046
0.046
0.046
0.046

38
75
112
150

135
135
135
135

12
12
12
12

S1
S1
S1
S1

Diode
Rth(j-c)
(C/W)

OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

Katalog2009-Innenteil_S3-78

2.03

27.04.2009

9:52 Uhr

Seite 29

5th Generation Full Gate CSTBTTM IPMs (L1 & S1-Series)

Package L1

Package L2

Package L3

Package L5

Package S1

Dimensions in mm

29

Katalog2009-Innenteil_S3-78

27.04.2009

9:52 Uhr

Seite 30

2.04
5th Generation CSTBTTM IPMs (L-Series)
Features
5th Generation IGBT chip with CSTBTTM technology
and 1m design rule process
Typical VCE(sat) =
1.5V @ Tj = 125C for 600V and
1.9V @ Tj = 125C for 1200V
Integrated turn-on speed controller circuit optimises
EMI performance
On-chip temperature sensor for Tj detection of
CSTBTTM chip
Package size reduced by 32% compared to
previous generation
Detection, protection and status indication
circuits for short-circuit, over-temperature,
and under-voltage (fault output available
from upper arm devices)
Monolithic gate drive & protection logic
Up to 75A, solder pin & screw types
with same base plate dimension

Line-up L-Series
Symbol

Internal
Function

VCES
(V)

IC (A)
25

600
3 Inverter IGBT
Integrated Gate Drive
PM25CLA120
SC / OT / UV
1200
PM25CLB120
3 Inverter IGBT
Integrated Gate Drive
Brake Control
SC / OT / UV

600
1200

PM25RLA120
PM25RLB120

50
PM50CLA060
PM50CLB060
PM50CLA120
PM50CLB120
PM50RLA060
PM50RLB060
PM50RLA120
PM50RLB120

75
PM75CLA060
PM75CLB060
PM75CLA120
PM75CLB120
PM75RLA060
PM75RLB060
PM75RLA120
PM75RLB120

CLA / RLA types with screw terminals; CLB / RLB types with solder pins
SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

30

100

150

200

300

400

600

PM100CLA060 PM150CLA060 PM200CLA060 PM300CLA060 PM450CLA060 PM600CLA060


PM100CLA120 PM150CLA120 PM200CLA120 PM300CLA120 PM450CLA120
PM100RLA060 PM150RLA060 PM200RLA060 PM300RLA060
PM100RLA120 PM150RLA120

Katalog2009-Innenteil_S3-78

2.04

27.04.2009

9:52 Uhr

Seite 31

5th Generation CSTBTTM IPMs (L-Series)


Maximum
Ratings

Type Number
VCES
(V)

IC
(A)

VCE(sat)
@ Tj = 125C
(V)

Typical Switching Times

Typ.

Max.

ton
(s)

tc(on)
(s)

toff
(s)

Typical Protection
Functions

Thermal Characteristics

Electrical Characteristics

tc(off)
(s)

trr
(s)

IGBT
Rth(j-c)
(C/W)

PackageNo.

Diode
Rth(j-c)
(C/W)

Rth(c-f)
(C/W)

SC*
(A)

OT
(C)

UV
(V)

600 Volt IPM (L-Series)


PM50CLA060

600

50

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.95

1.61

0.038

100

145

12

L1

PM50CLB060

600

50

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.95

1.61

0.038

100

145

12

L2

PM50RLA060

600

50

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.95

1.61

0.038

100

145

12

L1

PM50RLB060

600

50

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.95

1.61

0.038

100

145

12

L2

PM75CLA060

600

75

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.32

0.53

0.038

150

145

12

L1

PM75CLB060

600

75

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.32

0.53

0.038

150

145

12

L2

PM75RLA060

600

75

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.32

0.53

0.038

150

145

12

L1

PM75RLB060

600

75

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.32

0.53

0.038

150

145

12

L2

PM100CLA060

600

100

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.27

0.43

0.038

200

145

12

L1

PM100RLA060

600

100

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.27

0.43

0.038

200

145

12

L1

PM150CLA060

600

150

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.20

0.33

0.038

300

145

12

L1

PM150RLA060

600

150

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.20

0.33

0.038

300

145

12

L1

PM200CLA060

600

200

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.16

0.24

0.023

400

145

12

L3

PM200RLA060

600

200

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.16

0.24

0.023

400

145

12

L3

PM300CLA060

600

300

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.12

0.18

0.023

600

145

12

L3

PM300RLA060

600

300

1.5

2.0

1.0

0.4

1.2

0.5

0.2

0.12

0.18

0.023

600

145

12

L3

PM450CLA060

600

450

1.8

2.3

1.0

0.4

2.2

0.6

0.2

0.12

0.19

0.014

900

145

12

L4

PM600CLA060

600

600

1.8

2.3

1.0

0.4

2.2

0.6

0.2

0.07

0.11

0.014

1200

145

12

L4

1200 Volt IPM (L-Series)


PM25CLA120

1200

25

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.83

1.36

0.038

50

145

12

L1

PM25CLB120

1200

25

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.83

1.36

0.038

50

145

12

L2

PM25RLA120

1200

25

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.83

1.36

0.038

50

145

12

L1

PM25RLB120

1200

25

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.83

1.36

0.038

50

145

12

L2

PM50CLA120

1200

50

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.26

0.39

0.038

100

145

12

L1

PM50CLB120

1200

50

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.26

0.39

0.038

100

145

12

L2

PM50RLA120

1200

50

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.26

0.39

0.038

100

145

12

L1

PM50RLB120

1200

50

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.26

0.39

0.038

100

145

12

L2

PM75CLA120

1200

75

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.21

0.30

0.038

150

145

12

L1

PM75CLB120

1200

75

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.21

0.30

0.038

150

145

12

L2

PM75RLA120

1200

75

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.21

0.30

0.038

150

145

12

L1

PM75RLB120

1200

75

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.21

0.30

0.038

150

145

12

L2

PM100CLA120

1200

100

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.16

0.26

0.023

200

145

12

L3

PM100RLA120

1200

100

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.16

0.26

0.023

200

145

12

L3

PM150CLA120

1200

150

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.12

0.20

0.023

300

145

12

L3

PM150RLA120

1200

150

1.9

2.4

1.0

0.4

2.0

0.7

0.5

0.12

0.20

0.023

300

145

12

L3

PM200CLA120

1200

200

1.9

2.4

1.0

0.4

2.3

0.7

0.5

0.12

0.20

0.014

400

145

12

L4

PM300CLA120

1200

300

1.9

2.4

1.0

0.4

2.3

0.7

0.5

0.08

0.13

0.014

600

145

12

L4

PM450CLA120

1200

450

1.9

2.4

1.0

0.4

2.3

0.7

0.5

0.05

0.09

0.014

900

145

12

L4

*minimum trip values

OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

31

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9:52 Uhr

Seite 32

5th Generation CSTBTTM IPMs (L-Series)

Package L1

Package L2

Package L3

Package L4

Dimensions in mm

32

Katalog2009-Innenteil_S3-78

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9:52 Uhr

Seite 33

2.05
5th Generation IPMs for Photovoltaic Application

Features
5th Generation trench chip (CSTBTTM)
for lower saturation voltage
VCE(sat) = 1.55V at rated current and Tj = 125C
Integrated high speed control ICs for switching
frequencies up to 30kHz

Low noise (controlled di/dt)


On-chip temperature sensing and individual OT protection
Compact L-Series IPM package with screw and pin terminals
0, 1 or 2 boost converters built in for multi-string operation
50A / 600V modules good for approximately 7.5kW (16kHz) fed to mains
Rated currents of 50A and 75A with a rated voltage of 600V

Line-up (600V)
IC (A)

Circuit
1 Inverter

50

1 Inverter & 1 Chopper


1 Inverter & 2 Chopper
1 Inverter

75

1 Inverter & 1 Chopper


1Inverter & 2 Chopper

Terminal

Package

Type name

Screw
Pin
Screw
Pin
Screw
Pin
Screw
Pin
Screw
Pin
Screw
Pin

L1
L2
L1
L2
L1
L2
L1
L2
L1
L2
L1
L2

PM50B4LA060
PM50B4LB060
PM50B5LA060
PM50B5LB060
PM50B6LA060
PM50B6LB060
PM75B4LA060
PM75B4LB060
PM75B5LA060
PM75B5LB060
PM75B6LA060
PM75B6LB060

33

Katalog2009-Innenteil_S3-78

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27.04.2009

9:52 Uhr

Seite 34

5th Generation IPMs for Photovoltaic Application

Circuit Diagram

Maximum
Ratings
Type Number

VCES
(V)

IC
(A)

VCE(sat)
@ Tj = 125C
(V)
Typ.

PM50B4LA060
PM50B4LB060
PM50B5LA060
PM50B5LB060
PM50B6LA060
PM50B6LB060
PM75B4LA060
PM75B4LB060
PM75B5LA060
PM75B5LB060
PM75B6LA060
PM75B6LB060
*minimum trip values
Package L1

600
600
600
600
600
600
600
600
600
600
600
600

50
50
50
50
50
50
75
75
75
75
75
75

1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55
1.55

Max.

Typical Switching Times


tc(off)
(s)

Typical Protection
Functions

Thermal Characteristics

Electrical Characteristics

trr
(s)

IGBT
Rth(j-c)
(C/W)

ton
(s)

tc(on)
(s)

toff
(s)

0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7

0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2

600 Volt IPM for Solar Power


0.9
0.2
0.1
0.95
0.9
0.2
0.1
0.95
0.9
0.2
0.1
0.95
0.9
0.2
0.1
0.95
0.9
0.2
0.1
0.95
0.9
0.2
0.1
0.95
0.9
0.2
0.1
0.32
0.9
0.2
0.1
0.32
0.9
0.2
0.1
0.32
0.9
0.2
0.1
0.32
0.9
0.2
0.1
0.32
0.9
0.2
0.1
0.32

Diode
Rth(j-c)
(C/W)

Rth(c-f)
(C/W)

1.61
1.61
1.61
1.61
1.61
1.61
0.53
0.53
0.53
0.53
0.53
0.53

0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038

SC*
(A)

OT
(C)

UV
(V)

100
100
100
100
100
100
150
150
150
150
150
150

145
145
145
145
145
145
145
145
145
145
145
145

12
12
12
12
12
12
12
12
12
12
12
12

PackageNo.

L1
L2
L1
L2
L1
L2
L1
L2
L1
L2
L1
L2

OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.
Package L2

Dimensions in mm

34

Katalog2009-Innenteil_S3-78

27.04.2009

9:52 Uhr

Seite 35

2.06
3rd Generation IPMs (S-Series)

Features
High Efficiency:
Low losses at high frequencies
due to 3rd Generation IGBT chips
(typ. saturation voltage is 1.8V for a 600V device,
and 2.3V for a 1200V device).

High Frequency:
Reduced EMI noise level and recovery losses
due to the integrated fast and soft recovery diode.
Direct Logic Drive
Ruggedness:
Improved reliability ensured by integrated protection
such as over-current, over-temperature and undervoltage. Moreover, Real Time Controls short-circuit
protection suppresses high temperature rise and
excessive surge voltage.

35

Katalog2009-Innenteil_S3-78

2.06

27.04.2009

9:52 Uhr

Seite 36

3rd Generation IPMs (S-Series)

Line-up S-Series
Symbol

Internal Function

1/2 Inverter IGBT


Integrated Gate Drive
OC / UV

VCES
(V)

IC (A)
10

15

20 (25)

30

50

75

100

PM75DSA120

PM100DSA120

600

1200

1 Inverter IGBT
Integrated Gate Drive
OC / OT / UV

3 Inverter IGBT
Integrated Gate Drive
OC / SC / OT / UV

600

1200

600

PM10CSJ060

PM15CSJ060

1200

PM10CZF120

PM15CZF120

3 Inverter IGBT
600
Integrated Gate Drive
Brake-Control
OC / SC / OT / UV
1200

Internal Function

1/2 Inverter IGBT


Integrated Gate Drive
OC / UV

1 Inverter IGBT
Integrated Gate Drive
OC / OT / UV

3 Inverter IGBT
Integrated Gate Drive
OC / SC / OT / UV

VCES
(V)

PM30CSJ060

PM30RSF060

PM10RSH120

PM15RSH120

2
Symbol

PM20CSJ060

PM25RSB120
PM25RSK120

PM50RSA060
PM50RSK060

PM75CSA120

PM100CSA120

PM75RSA060
PM75RSK060

PM100RSA060

PM50RSA120

IC (A)
150

200

300

400

600

600

1200

600

PM200DSA060

PM300DSA060

PM300DSA120

1200

PM150DSA120

PM200DSA120

600

PM150CSA060

PM200CSA060

PM150RSA060

PM200RSA060

1200

3 Inverter IGBT
600
Integrated Gate Drive
Brake-Control
OC / SC / OT / UV
1200

800
PM800HSA060

OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

36

PM100CSA060

PM400HSA120

PM600HSA120

PM400DSA060

PM600DSA060

PM800HSA120

Katalog2009-Innenteil_S3-78

2.06

27.04.2009

Seite 37

3rd Generation IPMs (S-Series)


Maximum
Ratings

Type Number

9:52 Uhr

VCES
(V)

IC
(A)

VCE(sat)
@ Tj = 25C
(V)
Typ.

Max.

Typical Switching Times


ton
(s)

tc(on)
(s)

toff
(s)

Typical Protection
Functions

Thermal Characteristics

Electrical Characteristics

tc(off)
(s)

trr
(s)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c)
(C/W)

Rth(c-f)
(C/W)

OC
(A)

SC
(A)

OT
(C)

UV
(V)

PackageNo.

600 Volt IPM Modules


PM10CSJ060

600

10

1.8

2.5

0.5

0.2

1.5

0.4

0.12

3.2

4.5

0.083

18

27

110

12

S6

PM15CSJ060

600

15

1.8

2.5

0.5

0.2

1.5

0.4

0.12

2.9

4.5

0.083

26

39

110

12

S6

PM20CSJ060

600

20

1.8

2.5

0.6

0.2

1.5

0.5

0.12

2.2

4.5

0.083

38

57

110

12

S6

PM30CSJ060

600

30

1.8

2.5

0.6

0.3

2.0

0.6

0.12

1.5

3.0

0.083

53

80

110

12

S6

PM30RSF060

600

30

1.8

2.5

0.6

0.3

2.0

0.6

0.12

1.5

3.0

0.067

53

80

110

12

S9

PM50RSA060

600

50

1.8

2.7

0.8

0.4

2.0

0.5

0.15

0.9

2.5

0.027

88

132

118

12

S10

PM50RSK060

600

50

1.8

2.7

0.8

0.4

2.0

0.5

0.15

1.25

3.0

0.038

88

132

110

12

S11

PM75RSA060

600

75

1.8

2.7

0.8

0.4

2.0

0.5

0.15

0.4

1.0

0.027

161

241

118

12

S10

PM75RSK060

600

75

1.8

2.7

0.8

0.4

2.0

0.5

0.15

1.0

0.95

0.036

161

241

110

12

S12

PM100CSA060

600

100

1.8

2.7

0.8

0.4

2.0

0.6

0.15

0.31

0.70

0.027

240

360

118

12

S7

PM100RSA060

600

100

1.8

2.7

0.8

0.4

2.0

0.6

0.15

0.31

0.70

0.027

240

360

118

12

S7

PM150CSA060

600

150

1.8

2.7

0.8

0.4

2.0

0.6

0.15

0.25

0.47

0.027

300

420

118

12

S7

PM150RSA060

600

150

1.8

2.7

0.8

0.4

2.0

0.6

0.15

0.25

0.47

0.027

300

420

118

12

S7

PM200CSA060

600

200

1.8

2.7

0.8

0.4

2.0

0.6

0.15

0.21

0.35

0.018

400

560

118

12

S8

PM200DSA060

600

200

1.8

2.6

1.4

0.4

2.0

0.5

0.15

0.21

0.35

0.060

400

560

110

12

S2

PM300DSA060

600

300

1.8

2.6

1.4

0.4

2.0

0.5

0.15

0.13

0.25

0.048

540

760

110

12

S3

PM400DSA060

600

400

1.8

2.6

1.4

0.4

2.0

0.5

0.15

0.11

0.18

0.038

650

910

110

12

S4

PM600DSA060

600

600

1.8

2.6

1.4

0.4

2.0

0.5

0.15

0.07

0.13

0.030

1000

1400

110

12

S5

PM800HSA060

600

800

2.0

2.7

1.4

0.4

2.5

0.5

0.15

0.06

0.09

0.038

1350

1870

110

12

S1

PM10CZF120

1200

10

2.7

3.7

0.6

0.3

1.8

0.8

0.15

2.0

5.5

0.067

27

41

110

12

S16

PM10RSH120

1200

10

2.3

3.3

0.7

0.3

1.7

0.6

0.15

2.0

5.5

0.044

27

41

110

12

S17

PM15CZF120

1200

15

2.7

3.7

0.6

0.3

1.8

0.8

0.15

1.5

4.5

0.067

37

56

110

12

S16

PM15RSH120

1200

15

2.3

3.3

0.7

0.3

1.7

0.7

0.15

1.5

4.5

0.044

37

56

110

12

S17

PM25RSB120

1200

25

2.5

3.5

1.0

0.4

2.0

0.7

0.15

0.95

2.5

0.036

62

101

118

12

S18

PM25RSK120

1200

25

2.5

3.5

1.0

0.4

2.0

0.7

0.15

1.25

3.0

0.038

58

81

110

12

S19

PM50RSA120

1200

50

2.5

3.5

1.0

0.4

2.0

0.7

0.15

0.36

1.0

0.027

112

183

118

12

S7

PM75CSA120

1200

75

2.5

3.5

1.0

0.4

2.5

0.7

0.15

0.25

0.51

0.027

170

250

118

12

S7

PM75DSA120

1200

75

2.3

3.2

1.4

0.4

2.5

0.6

0.20

0.27

0.51

0.060

170

250

110

12

S2

PM100CSA120

1200

100

2.5

3.5

1.0

0.4

2.5

0.7

0.15

0.21

0.35

0.018

230

340

118

12

S8

PM100DSA120

1200

100

2.3

3.2

1.4

0.4

2.5

0.6

0.20

0.21

0.35

0.060

230

340

110

12

S2

PM150DSA120

1200

150

2.3

3.2

1.4

0.4

2.5

0.6

0.20

0.13

0.25

0.048

320

450

110

12

S3

PM200DSA120

1200

200

2.3

3.2

1.4

0.4

2.0

0.6

0.20

0.11

0.18

0.038

360

540

110

12

S4

PM300DSA120

1200

300

2.3

3.2

1.4

0.4

2.5

0.6

0.20

0.07

0.13

0.030

560

840

110

12

S5

PM400HSA120

1200

400

2.3

3.2

1.4

0.4

2.5

0.6

0.20

0.054

0.10

0.038

650

930

110

12

S13

PM600HSA120

1200

600

2.3

3.2

1.4

0.4

3.0

0.6

0.20

0.036

0.06

0.025

1000

1400

110

12

S14

PM800HSA120

1200

800

2.5

3.5

1.4

0.4

3.0

0.6

0.20

0.027

0.045

0.022

1300

1700

110

12

S15

1200 Volt IPM Modules

OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

37

Katalog2009-Innenteil_S3-78

2.06

27.04.2009

9:52 Uhr

Seite 38

3rd Generation IPMs (S-Series)

Package S1

Package S2

Package S3

Package S4

Package S5

Package S6

Dimensions in mm

38

Katalog2009-Innenteil_S3-78

2.06

27.04.2009

9:52 Uhr

Seite 39

3rd Generation IPMs (S-Series)

Package S7

Package S8

Package S9

Package S10

Package S11

Package S12

Dimensions in mm

39

Katalog2009-Innenteil_S3-78

2.06

27.04.2009

9:52 Uhr

Seite 40

3rd Generation IPMs (S-Series)

Package S13

Package S14

Package S15

Package S16

Dimensions in mm

40

Katalog2009-Innenteil_S3-78

2.06
Package S17

27.04.2009

9:52 Uhr

Seite 41

3rd Generation IPMs (S-Series)


Package S19

2
Package S18

Dimensions in mm

41

Katalog2009-Innenteil_S3-78

27.04.2009

9:52 Uhr

Seite 42

2.07
3rd Generation IPMs (V-Series)
Features
Internal inductance reduced by 50%
Higher reliability due to solderless connections
Integrates IGBT bridge, drive, self protection
functions

Line-up V-Series
Symbol

Internal
Function

VCES
(V)

1 Inverter IGBT
Integrated Gate
Drive
OT / UV

600

3 Inverter IGBT
Integrated Gate
Drive
SC / OT / UV

IC (A)
50

75

100

150

200

1200

PM200DVA120 PM300DVA120

600

PM100CVA060 PM150CVA060 PM200CVA060 PM300CVA060

1200

400

600

PM400DVA060 PM600DVA060

PM75CVA120 PM100CVA120 PM150CVA120

3 Inverter IGBT
600
PM75RVA060
Integrated Gate
Drive
Brake-Control
1200 PM50RVA120
OC / SC / OT / UV

OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.

42

300

Katalog2009-Innenteil_S3-78

2.07

27.04.2009

Seite 43

3rd Generation IPMs (V-Series)


Maximum
Ratings

Type Number

9:52 Uhr

VCES
(V)

IC
(A)

VCE(sat)
@ Tj = 25C
(V)
Typ.

Max.

Typical Switching Times


ton
(s)

tc(on)
(s)

toff
(s)

Typical Protection
Functions

Thermal Characteristics

Electrical Characteristics

tc(off)
(s)

trr
(s)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c)
(C/W)

Rth(c-f)
(C/W)

SC
(A)

OT
(C)

UV
(V)

PackageNo.

600 Volt IPM Modules


PM75RVA060

600

75

2.35

2.80

0.8

0.3

1.8

0.6

0.2

0.44

1.0

0.027

115

110

12

V5

PM100CVA060

600

100

2.35

2.80

0.8

0.3

1.8

0.6

0.2

0.37

0.70

0.027

158

110

12

V5

PM150CVA060

600

150

2.35

2.80

0.8

0.3

1.8

0.6

0.2

0.28

0.47

0.022

210

110

12

V3

PM200CVA060

600

200

2.35

2.80

0.8

0.3

1.8

0.6

0.2

0.21

0.35

0.022

310

110

12

V3

PM300CVA060

600

300

2.35

2.80

1.4

0.4

2.0

0.5

0.15

0.17

0.26

0.018

396

110

12

V4

PM400DVA060

600

400

2.35

2.80

1.4

0.4

2.0

0.5

0.15

0.11

0.18

0.081

910

110

12

V1

PM600DVA060

600

600

2.35

2.80

1.4

0.4

2.0

0.5

0.15

0.09

0.13

0.065

1400

110

12

V2

1200 Volt IPM Modules


PM50RVA120

1200

50

2.65

3.30

0.9

0.4

2.4

0.7

0.2

0.37

0.70

0.027

59

118

12

V5

PM75CVA120

1200

75

2.65

3.30

0.9

0.4

2.4

0.7

0.2

0.25

0.51

0.025

105

110

12

V3

PM100CVA120

1200

100

2.65

3.30

0.9

0.4

2.4

0.7

0.2

0.21

0.35

0.025

145

110

12

V3

PM150CVA120

1200

150

2.65

3.30

0.9

0.4

2.4

0.7

0.2

0.16

0.26

0.018

200

110

12

V4

PM200DVA120

1200

200

2.65

3.30

0.9

0.4

2.4

0.7

0.2

0.11

0.18

0.081

240

110

12

V1

PM300DVA120

1200

300

2.65

3.30

0.9

0.4

2.4

0.7

0.2

0.09

0.13

0.065

380

110

12

V2

2
Package V1

Package V2

Dimensions in mm

43

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3rd Generation IPMs (V-Series)

Package V3

Package V4

Package V5

Notes

Dimensions in mm

44

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2.08
Overview of DIPIPMTM

DIPIPMTM 1200V

DIPIPMTM
1200V

1200V/5A-35A

under
consideration

DIPIPMTM 600V

Super
Mini-DIPIPMTM
600V

600V/3A-30A

Mini-DIPIPMTM
600V

DIPIPMTM
600V

600V/5A-30A

600V/20A-75A

45

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Seite 46

2.09
1200V DIPIPMTM Ver. 4

(Dual-in-line Package Intelligent Power Modules)

Features
Designed for low power motor control
(0.4kW-5.5kW at 400V AC line voltage)
Lead free compact dual-in-line transfer mold package

Rated currents ranging from 5A-35A and VCES = 1200V


Protection functions:
UV: Control supply under voltage (P, N)
On-chip current sense for short circuit protection
Analog temperature sensor output (Tc)
2500Vrms isolation voltage
N-side open emitter structure
RoHS compliant
Evaluation board EVBPS2XA7X available

46

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Seite 47

1200V DIPIPMTM Ver. 4

2.09

(Dual-in-line Package Intelligent Power Modules)

Line-up 1200V DIPIPMTM Ver. 4


Type

IC (A)

Isolation Voltage
(Vrms)

VCES
(V)

10

15

25

35

50

PackageNo.

2500

1200

PS22A72

PS22A73

PS22A74

PS22A76

PS22A78-E

PS22A79*

D1

DIPIPM
*Under consideration

Thermal &
Mechanical
Characteristics

Electrical Characteristics
Type Number
VCES
(V)

Applicable
Motor
Ratings
(kW)

IC
(A)

fC
(kHz)

Isolation
Voltage
(Vrms)

VCE(sat)
@ Tj = 25C
(V)
Typ.

Max.

ton
(s)

trr
(s)

tc(on)
(s)

toff
(s)

tc(off)
(s)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c)
(C/W)

1.5
1.5
1.5

0.3
0.3
0.3

0.6
0.6
0.6

2.8
2.8
2.8

0.7
0.7
0.7

2.24
1.51
1.15

2.74
1.78
1.36

1.5
1.5

0.3
0.3

0.6
0.6

2.8
2.8

0.7
0.7

0.88
0.77

1.78
1.25

PS22A72
PS22A73
PS22A74

1200
1200
1200

0.7
1.5
2.2

5
10
15

15
15
15

2500
2500
2500

1200V DIPIPM
1.9
2.6
1.9
2.6
1.9
2.6

PS22A76
PS22A78-E

1200
1200

3.7
5.5

25
35

15
15

2500
2500

1.9
1.9

Circuit Diagram

HVIC X 1

Typical Switching Times

2.6
2.6

Package D1

IGBT & FWDi X 6

Gate drive
Level shift
Under voltage
protection
(UV, without
fault signal Fo)

LVIC X 1
Gate drive
Level shift
Under voltage
protection
(UV, without fault
signal Fo)
Short circuit
protection
(SC, with fault
signal Fo)
Fault signal
output
Temperature
output

Dimensions in mm

47

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Seite 48

2.10
600V DIPIPMTM (Dual-in-line Package Intelligent Power Modules)

Features
Low thermal resistance by innovative insulation material
RoHS compliant

For P-side IGBTs:


Drive circuit
High voltage level shift circuit
Control supply under voltage (UV)
lockout circuit
For N-side IGBTs:
Drive circuit
Short circuit (SC) protection circuit (by using external shunt resistor)
Control supply under voltage (UV) lockout circuit
IGBT Drive Supply
Single DC 15V power supply required
Control Input interface
Schmitt-triggered 3V, 5V, 15V input compatible, high active logic
Open emitter topology available
3A to 30A / 600V as short pin, long pin and zigzag pin types
(New versions with built-in bootstrap diodes (5A-15A) are now available)
Large DIPIPMTM available in 50A and 75A
For the time and cost effective performance evaluation of 4th Generation Super Mini-DIPIPMTM a dedicated
evaluation board (EVBPS21965) with in-built interface devices (shunt resistor, the snubber capacitor and the
bootstrap circuit) is available.
A newly developed evaluation board EVBPS2XA7X for large DIPIPMTM (50A/75A) is also available on request
(compatible to 1200V DIPIPMTM Ver. 4)

48

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600V DIPIPMTM

Seite 49

(Dual-in-line Package Intelligent Power Modules)

Super Mini-DIPIPMTM Ver. 4


Line-up Super Mini-DIPIPMTM
Motor Rating (kW)
Type

Super
MiniDIPIPM (1)

Isolation
Voltage
(Vrms)

1500

VCES
(V)

600

0.1

0.2

0.3

0.4
IC (A)

0.75

1.5

2.2

10

15

20

30

PS21961-4/
-T/-S (2)

PS21962-4/
-T/-S

PS21963-4E/
-ET/-ES
PS21993-4E/
-ET (3)

PS21963-4/
-T/-S
PS21993-4/
-T (3)

PS21964-4/
-T/-S
PS21994-4/
-T (3)

PS21965-4/
-T/-S

PackageNo.

D2
PS21997-4/
-T (3)

(1): Available in Short- (-4)-, Long- (-A)-, Zigzag- (-C)-, Both sides zigzag- (-W) pin type (2): With RC-IGBT Technology (3): Lower loss full gate CSTBT
-T: Over Temp. protection / -S: N-side open Emitter / -E: 8A
Package D2: Short/long pin type

Package D2: Zigzag pin type

-4/-T

-C

2
*

* in case of A, this
length is 14mm
Package D2: Both side zigzag pin type
-W

Package D2: Open emitter topology


-S

49

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600V DIPIPMTM

2.10

Seite 50

(Dual-in-line Package Intelligent Power Modules)

Super Mini-DIPIPMTM Ver. 4 Built-in Boot Strap Diode


Line-up Super Mini-DIPIPMTM Built-in BSD
Motor Rating (kW)
Type

Super Mini-DIPIPM
Built-In-BSD

Isolation
Voltage
(Vrms)
1500

VCES
(V)

600

0.2

0.3

0.4

0.75

10
PS219A3
PS219A3-T

15
PS219A4
PS219A4-T

IC (A)
5
PS219A2
PS219A2-T

8
PS219A3-E
PS219A3-ET

PackageNo.

D2

-T or -ET: Over Temp. protection


Package D2

2
Mini-DIPIPMTM Ver. 4
Line-up Mini-DIPIPMTM
Motor Rating (kW)
Type

Mini-DIPIPM
-V: Faster SW off type
Package D3

50

Isolation
Voltage
(Vrms)

VCES
(V)

2500

600

1.5

2.5
IC (A)

20
PS21765

30
PS21767/-V

PackageNo.

D3

Katalog2009-Innenteil_S3-78

27.04.2009

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600V DIPIPMTM

2.10

Seite 51

(Dual-in-line Package Intelligent Power Modules)

Large DIPIPMTM Ver. 4


Line-up Large DIPIPMTM Ver. 4
Motor Rating (kW)
Type

Large DIPIPM Ver. 4

Isolation
Voltage
(Vrms)
2500

VCES
(V)

PackageNo.

5.5
IC (A)

600

50

75

PS21A79

PS21A7A

D1

Package D1

DIPPSCTM Built-in partial SW circuit

Line-up DIPPSCTM Built-in partial SW circuit


Motor Rating (kW)
Type

DIPPSC Built-In
partial SW circuit

Isolation
Voltage
(Vrms)
2500

VCES
(V)

600

0.3

0.4

0.75

1.5

IC (A)
8

10

15

20

PS81B93-AE, -EW

PS81B93-A, -W

PS81B94-A, -W

PS81B95-A, -W

PackageNo.

D4

-A: Long Terminal / -W: Zigzag Terminal / -E: 8A


Package D4

51

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600V DIPIPMTM

2.10

Seite 52

(Dual-in-line Package Intelligent Power Modules)

Mini-DIPIPMTM Ver. 3
Line-up Mini-DIPIPMTM Ver. 3
Motor Rating (kW)
Type

Isolation
Voltage
(Vrms)

VCES
(V)

2500

600

Mini-DIPIPM Ver. 3

0.2

0.4

0.75

1.5

15
PS21564-P/-SP

20
PS21564-P/-SP

IC (A)
5
PS21562-P/-SP

10
PS21563-P/-SP

PackageNo.

D6

-S: N-side open Emitter / -P: Pb-free


Package D6: Standard topology

Package D6: Open emitter topology

2
Large DIPIPMTM Ver. 3
Line-up Large DIPIPMTM Ver. 3
Motor Rating (kW)
Type

Isolation
Voltage
(Vrms)

VCES
(V)

3.7
IC (A)

PackageNo.

Large DIPIPM Ver. 3

2500

600

50
PS21869-P/-AP

D7

-A: Long terminal type / -P: Pb-free


Package D7

52

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600V DIPIPMTM

2.10

Seite 53

(Dual-in-line Package Intelligent Power Modules)

Large DIPIPMTM Ver. 3.5


Line-up Large DIPIPMTM Ver. 3.5
Motor Rating (kW)
Type

Isolation
Voltage
(Vrms)

VCES
(V)

2500

600

Large DIPIPM Ver. 3.5

1.5

PackageNo.

2.5
IC (A)

20
PS21265-P/-AP

30
PS21267-P/-AP

D8

-A: Long terminal type / -P: Pb-free


Package D8: Short pin type

Package D8: Long pin type

2
Large DIPIPMTM Open Emitter
Line-up Large DIPIPMTM Open Emitter
Motor Rating (kW)
Type

Isolation
Voltage
(Vrms)

VCES
(V)

Large DIPIPM Open Emitter

2500

600

1.5

2.5
IC (A)

3.7

20
PS21065

30
PS21067

50
PS21069

PackageNo.

D9

Package D9

53

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600V DIPIPMTM

2.10

Seite 54

(Dual-in-line Package Intelligent Power Modules)

SIPIPMTM
Line-up SIPIPMTM
Motor Rating (kW)
Type

Isolation
Voltage
(Vrms)

VCES
(V)

0.1
IC (A)

PackageNo.

3
SIPIPM

2500

600

PS21661-RZ/-FR

D10

Package D10

Dimensions in mm
Notes

54

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Seite 55

2.11
DIPPFCTM (Dual-in-line Package Power Factor Correction)

Features
Employing low loss & high speed Trench IGBTs
for total loss reduction at high frequencies
High reliability (long power life cycle)
Low thermal resistance by innovative insulation
material

Low noise by optimization of gate driver


RoHS compliant
Under voltage (UV) protection

55

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DIPPFCTM

9:53 Uhr

Seite 56

(Dual-in-line Package Intelligent Power Modules)

Line-up DIPPFCTM
Type
DIPPFC

Isolation Voltage
(Vrms)

VCES
(V)

30

IC (A)
50

PackageNo.

2500

600

PS51787

PS51789

D11

Thermal & Mechanical


Characteristics

Electrical Characteristics
Type Number

Input AC
Line
Voltage
(Vrms)

IC
(A)

fC
(kHz)

Isolation
Voltage
(Vrms)

VCE(sat)
@ Tj = 25C
(V)
Typ.

Max.

Typical Switching Times


ton
(s)

trr
(s)

tc(on)
(s)

toff
(s)

tc(off)
(s)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c)
(C/W)

PS51787

264

30

20

2500

1.9

2.5

0.25 0.11 0.14 0.40 0.18

0.96

1.35

PS51789

264

50

20

2500

2.6

0.25 0.11 0.14 0.4 0.18

0.68

0.9

Circuit Diagram

Package D11

Dimensions in mm

56

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Seite 57

3.
DIPCIBTM Modules

(Dual-in-line Package Converter-Inverter-Brake)

Features
Converter, inverter and brake IGBTs in one
space efficient transfer mold housing well
respecting UL creepage and clearance
distances
Latest CSTBTTM trench gate technology (1m)
Open Emitter topology

Low thermal resistance


Isolated temperature sensor (NTC)
Line-up 10A, 15A and 25A / 1200V and
20A, 30A / 600V
Suitable for up to 5.5kW class drive
Dedicated control ICs available
For easy performance evaluation of entire
line up of DIPCIBTMs demo board
(EVBCP25TD1-24) is available on request.

57

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27.04.2009

9:53 Uhr

Seite 58

DIPCIBTM Modules (Dual-in-line Package Converter-Inverter-Brake)

Line-up DIPCIBTM
Circuit Diagram

VCES
(V)

IC (A)
5

10

15

600

1200 CP05TD1-24A CP10TD1-24A CP15TD1-24A

20

25

30

CP30TD1-12A

CP20TD1-12A1

CP25TD1-24A

DIPCIBTM Package Outline

Dimensions in mm

58

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Seite 59

4.
MOSFET Modules

Features
Low VDS(ON) and Low VSD
Advanced 0.35m trench gate MOSFET
chip technology
RDS(ON) = 0.8m (FM400TU-07A @ 25C)
Operation without snubber circuit possible
Avalanche capability is guaranteed
at turn-off & recovery
Control terminals for standard connector
Inbuilt Thermal sensor (NTC)

High reliability
100A(rms), 200A(rms), 300A(rms) available in 75V, 100V and 150V
in a 6 in 1 compact package

59

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Seite 60

MOSFET Modules
Circuit Diagram

Rated Current (A)

Voltage (V)

Type Number

75

FM200TU-07A

100

FM200TU-2A

150

FM200TU-3A

75

FM400TU-07A

100

FM400TU-2A

150

FM400TU-3A

75

FM600TU-07A

100

FM600TU-2A

150

FM600TU-3A

P
100

(7)
(1)

(8)
(1)

(9)
(3)

(10)
(4)

(11)
(5)

(12)
(5)
200

NP
(13)

(14)
(1)
(2)
(3)
(3)

(5)
(6)
(7)
(8)

SUP
SVP
SVP
SUN

SVN
SVN
GUP
GVP

(9)
(10)
(11)
(12)

GAP
GUN
GVN
GVN

Maximum
Ratings
Type Number

60

300

(13) TH1
(14) TH2

Thermal & Mechanical


Characteristics

Electrical Characteristics

rDS(ON)
VDSS ID(rms) @ Tj = 25C
(m)
(V) (A(rms))
Typ.

Max.

Ciss
(nF)

Coss
(nF)

Crss
(nF)

Maximum Switching Times


td(on)
(ns)

tr
(ns)

td(off)
(ns)

tf
(ns)

trr
(ns)

Qrr
(C)

VSD
(V)

MOSFET
Rth(j-c)
(C/W)

Rth(j-c)
(C/W)

PackageNo.

FM200TU-07A

75

100

1.20

1.65

50

450

400

600

400

200

2.0

1.3

0.220

0.1

FM1

FM400TU-07A

75

200

0.80

1.10

75

10

450

500

450

400

200

4.5

1.3

0.142

0.1

FM1

FM600TU-07A

75

300

0.53

0.73

110

15

10

450

600

600

400

200

4.8

1.3

0.096

0.1

FM1

FM200TU-2A

100

100

2.40

3.30

50

400

300

450

300

250

3.6

1.3

0.220

0.1

FM1

FM400TU-2A

100

200

1.45

2.00

75

10

400

400

450

300

250

6.0

1.3

0.142

0.1

FM1

FM600TU-2A

100

300

0.80

1.10

110

15

10

400

600

600

300

250

6.2

1.3

0.096

0.1

FM1

FM200TU-3A

150

100

4.80

6.60

50

400

250

450

200

200

6.5

1.3

0.220

0.1

FM1

FM400TU-3A

150

200

2.60

3.55

75

10

400

300

450

200

200

7.0

1.3

0.142

0.1

FM1

FM600TU-3A

150

300

1.60

2.20

110

15

10

400

400

500

200

200

8.0

1.3

0.096

0.1

FM1

Katalog2009-Innenteil_S3-78

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Seite 61

MOSFET Modules

Comparison

Trench
Mosfet

Trench
IGBT

S
P Base

P Base

n+ emitter

n+ emitter

n- layer

n- layer
n+ buffer layer

n+ substrate

p+ substrate

Body diode

Output Characteristics

Pachage FM1
Package
Outline

Example FM400TU-07A

4
400

VDS = 20V

12V

10V

15V

350

Tch = 25C

Drain-Current ID (A)

300

0.8m
250

200

9V

150

100

50

No Threshold Voltage
0
0

01

02

03

04

05

06

07

08

09

Drain-Source Voltage VDS (V)

Dimensions in mm

61

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Seite 62

5.01
High Voltage IGBT Modules (HV-IGBT)

Features
Highest Reliability in Material and Processes:
Improvement of power cycling capability
Highest Quality Controls:
Static and switching tests
100% shipping inspection
HV-IGBT modules and complementary HV-Diodes are
available in rated voltages of 1.7kV, 2.5kV, 3.3kV, 4.5kV, 6.5kV
and rated currents ranging from 200A to 2400A

1.7kV HV-IGBT modules with Light Punch Through Carrier


Stored Trench Gate Bipolar Transistor (LPT-CSTBTTM)
technology and a new free-wheel diode design for reduced
IGBT losses and suppressed diode oscillation
4.5kV, 6.5kV class HV-IGBTs with LPT chip structure to
provide low loss performance and wide RBSOA
3.3kV, 4.5kV & 6.5kV HV-IGBT modules and diodes with
10.2kV isolated package available
New 3.3kV, 4.5kV, 6.5kV R-Series IGBT Modules
Low loss performance
Increased terminal torque capability to 22 Nm
10.2kV high isolation package available on request
Extended maximum operating temperature and minimum
storage temperature up to 150C and -55C respectively

62

G3 (AlSiC)

G3 (AISiC)

G2 (Cu)

G3 (AlSiC)

G2 (Cu)

Single

Single

CM200HG-130H3

CM400DY-50H

CM600HG-130H3 CM750HG-130R1,3,5

190 x 140 mm Package

CM900HC-90H
CM900HG-90H1,3

CM600HG-90H1,3

1500

CM1200HC-90R1,5
CM1200HG-90R1,3,5

CM1200HC-66H CM1500HC-66R5
CM1200HG-66H3 CM1500HG-66R1,3,5

New 3.3kV R-Series

CM1000E4C-66R1,5

CM800E2Z-66H
CM800E2C-66H
CM800E4C-66H1
CM800E6C-66H
CM900HB-90H

CM1000HC-66R1,5

CM1200HB-66H

CM800HB-66H
CM800HC-66H

CM1200HA-66H

CM800HA-66H

CM1200HC-50H

CM1200HB-50H

CM1200E4C-34N 2

CM1200DC-34N 2

CM1200HCB-34N1,2

CM1200DB-34N 2

CM1200HC-34H

CM1200HA-34H

1200

CM800HB-50H

1000

CM1200HA-50H

900

CM800HA-50H

CM800DZ-34H
CM800DZB-34N

CM800HA-34H

800

CM600HB-90H

750

High Isolation Package (10.2kVrms)

CM400E4G-130H3

CM400HG-130H1,3

CM400HB-90H

CM400HG-66H3

CM400DY-66H

CSTBTTM Chip Technology

Chopper

Single

Single

Single

Chopper

Preliminary Data
1
Under Development

6500

4500

3300

Dual

Single

Single

G3 (AlSiC)

G1 (Cu)

Single

Dual

Single

Chopper

Dual

Single

Dual

Dual

Single

CM600E2Y-34H

Chopper

600

CM600DY-34H

G2 (Cu)

G1 (Cu)

400

IC (A)

CM1600HC-34H

1600

CM2400HC-34H

2400

CM1800HC-34N 2 CM2400HC-34N 2
CM1800HCB-34N1,2,4 CM2400HCB-34N1,2,4

CM1800HC-34H

1800

9:53 Uhr

2500

200

Dual

Single

ration

Configu-

27.04.2009

G4 (AlSiC)

G4 (Cu)

G3 (AlSiC)

G1 (Cu)

Generation
& Base
Plate
Material

5.01

1700

(V)

VCES

Katalog2009-Innenteil_S3-78
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High Voltage IGBT Modules (HV-IGBT)

Line-up HV-IGBTs

63

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High Voltage IGBT Modules (HV-IGBT)


Maximum Ratings

Type Number

Seite 64

VCES
(V)

IC
(A)

Viso
(V)

VCE(sat)
@ Tj = 25C Cies
(nF)
(V)
Typ.

Max.

Electrical Characteristics
Free Wheel Diode Thermal & Mechanical
Characteristics
Maximum
Switching
Times
Vf
Qrr
trr
Coes Cres
IGBT
Diode
(V) (C) (ns) R
tr
td(off)
tf
(nF) (nF) td(on)
Rth(j-c) Rth(c-f)
th(j-c)
Typ.
Typ.
Max.
(ns) (ns) (ns) (ns)
(C/W) (C/W) (C/W)

PackageNo.

1700 Volt HV-IGBT Modules


CM600DY-34H

1700 600 4000 2.75 3.58

70

10.0

3.8

1.2

1.5

2.0

0.6

2.4

100

2.0

0.0180

0.056

0.016

HV2

CM600E2Y-34H

1700 600 4000 2.75 3.58

70

10.0

3.8

1.2

1.5

2.0

0.6

2.4

100

2.0

0.0180

0.056

0.016

HV4

CM800HA-34H

1700 800 4000 2.75 3.58

93

13.3

5.1

1.2

1.5

2.0

0.6

2.4

135

2.0

0.0135

0.042

0.012

HV1

CM800DZ-34H

1700 800 4000 2.60 3.38

72

9.0

3.6

1.60

2.00

2.7

0.8

2.6

150

2.7

0.0200

0.034

0.016

HV2

CM800DZB-34N

1700 800 4000 2.10 2.35 132

7.2

2.1

0.90

0.25

1.5

0.2

2.5

260

1.2

0.0240

0.034

0.016

HV2

CM1200HA-34H

1700 1200 4000 2.75 3.58 140 20.0

7.6

1.20

1.50

2.0

0.6

2.4

200

2.0

0.0090

0.028

0.008

HV1

CM1200HC-34H

1700 1200 4000 2.50

120 15.0

6.0

1.60

2.00

2.7

0.8

2.55 250

2.7

0.0120

0.021

0.008

HV1

CM1200DB-34N

1700 1200 4000 2.15

176

9.6

2.8

1.00

0.40

1.2

0.3

2.6

300

1.0

0.0180

0.04

0.016

HV10

CM1200DC-34N

1700 1200 4000 2.15

176

9.6

2.8

1.00

0.40

1.2

0.3

2.6

300

1.0

0.0190

0.042

0.016

HV10

CM1200E4C-34N 1700 1200 4000 2.15

176

9.6

2.8

1.00

0.40

1.2

0.3

2.6

300

1.0

0.0190

0.042

0.016

HV5

CM1200HCB-34N 1700 1200 4000 2.05

220 12.0

3.5

0.95

0.30

1.6

0.25

2.4

900

1.2

0.0145 0.0205

0.011

HV5

CM1600HC-34H

1700 1600 4000 2.60

144 18.0

7.2

1.60

2.00

2.7

0.8

2.6

300

2.7

0.0100

0.017

0.008

HV1

CM1800HC-34H

1700 1800 4000 2.40

168 21.0

8.4

1.60

2.00

2.7

0.8

2.5

700

2.7

0.0080

0.013

0.006

HV6

CM1800HC-34N

1700 1800 4000 2.15

264 14.4

4.2

1.00

0.35

2.0

0.25

2.4

540

1.0

0.0130

0.028

0.011

HV5

CM1800HCB-34N 1700 1800 4000 2.00

352 19.2

5.6

0.95

0.30

1.6

0.25 2.35 900

1.2

0.0090

0.013

0.007

HV6

CM2400HC-34H

1700 2400 4000 2.60

210 27.0 10.8 1.60

2.00

2.7

0.8

2.7

0.0070

0.012

0.006

HV6

CM2400HC-34N

1700 2400 4000 2.15

352 19.2

5.6

1.00

0.35

2.0

0.25

2.4

720

1.0

0.0098

0.021

0.008

HV5

CM2400HCB-34N 1700 2400 4000 2.10

396 21.6

6.3

0.95

0.30

1.6

0.25

2.5

900

1.2

0.0080

0.012

0.006

HV6

2.6

900

2500 Volt HV-IGBT Modules


CM400DY-50H

2500 400 6000

3.2

4.16

40

4.4

1.3

1.0

2.0

2.0

1.0

2.9

85

1.2

0.036

0.072

0.016

HV3

CM800HA-50H

2500 800 6000

3.2

4.16

80

8.8

2.7

1.6

2.0

2.5

1.0

2.9

170

1.2

0.018

0.036

0.008

HV5

CM800HB-50H

2500 800 6000

2.8

3.64 120 13.2

4.0

1.6

2.0

2.5

1.0

2.5

230

1.2

0.012

0.024

0.008

HV7

CM1200HA-50H

2500 1200 6000

3.2

4.16 120 13.2

4.0

1.6

2.0

2.5

1.0

2.9

250

1.2

0.012

0.024

0.006

HV6

CM1200HB-50H

2500 1200 6000

2.8

3.64 180 19.8

6.0

1.6

2.0

2.5

1.0

2.5

350

1.2

0.008

0.016

0.006

HV6

CM1200HC-50H

2500 1200 6000

2.8

3.64 180 19.8

6.0

1.6

2.0

2.5

1.0

2.5

350

1.2

0.0085

0.017

0.006

HV6

HV3

3300 Volt HV-IGBT Modules

CM400DY-66H

3300 400 6000

4.4

5.72

40

1.2

1.0

2.0

2.0

1.0

3.3

100

1.2

0.036

0.072

0.016

CM400HG-66H

3300 400 10200 3.3

4.20

60

5.4

1.6

1.0

2.5

1.0

2.8

270

1.4

0.030

0.060

0.018

HV9

CM800E2Z-66H

3300 800 6000

3.8

4.94 120

12

3.6

1.6

2.0

2.5

1.0

2.8

270

1.4

0.013

0.025

0.008

HV6

CM800E2C-66H

3300 800 6000

3.8

4.94 120

12

3.6

1.6

2.0

2.5

1.0

2.8

270

1.4

0.012

0.024

0.008

HV6

CM800E4C-66H

3300 800 6000

3.8

4.94 120

12

3.6

1.6

2.0

2.5

1.0

2.8

270

1.4

0.013

0.025

0.006

HV6

CM800E6C-66H

3300 800 6000

3.3

4.20 120

12

3.6

1.6

1.0

2.5

1.0

2.8

540

1.4

0.013

0.025

0.008

HV6

CM800HA-66H

3300 800 6000

4.4

5.72

80

2.4

1.6

2.0

2.5

1.0

3.3

200

1.2

0.018

0.036

0.008

HV5

CM800HB-66H

3300 800 6000

3.8

4.94 120

12

3.6

1.6

2.0

2.5

1.0

2.8

270

1.4

0.012

0.024

0.008

HV7

CM800HC-66H

3300 800 6000

3.3

120

12

3.6

1.6

1.0

2.5

1.0

2.8

270

1.4

0.013

0.025

0.008

HV7

CM1200HA-66H

3300 1200 6000

4.4

5.72 120

12

3.6

1.6

2.0

2.5

1.0

3.3

300

1.2

0.012

0.024

0.006

HV6

CM1200HB-66H

3300 1200 6000

3.8

4.94 180

18

5.4

1.6

2.0

2.5

1.0

2.8

400

1.4

0.008

0.016

0.006

HV6

CM1200HC-66H

3300 1200 6000

3.3

4.29 180

18

5.4

1.6

2.0

2.5

1.0

2.8

400

1.4

0.0085

0.017

0.006

HV6

CM1200HG-66H

3300 1200 10200 3.3

4.29 180

18

5.4

1.6

2.0

2.5

1.0

2.8

400

1.4

0.010

0.020

0.006

HV8

CM1000HC-66R

3300 1000 6000

under development

CM1000E4C-66R 3300 1000 6000

under development

CM1500HC-66R

3300 1500 10200

under development

CM1500HG-66R

3300 1500 10200

under development

Preliminary Data

64

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Seite 65

High Voltage IGBT Modules (HV-IGBT)


Maximum Ratings

Type Number

VCES
(V)

IC
(A)

Viso
(V)

VCE(sat)
@ Tj = 25C Cies
(nF)
(V)

Electrical Characteristics
Free Wheel Diode Thermal & Mechanical
Characteristics
Maximum
Switching
Times
Vf
Qrr
trr
Coes Cres
Diode
IGBT
(V) (C) (ns) R
tr
td(off)
tf
(nF) (nF) td(on)
Rth(j-c) Rth(c-f)
th(j-c)
Typ.
Typ.
Max.
(ns) (ns) (ns) (ns)
(C/W) (C/W) (C/W)

Typ.

Max.

4500 400 6000

3.0

3.9

72

5.3

CM600HB-90H

4500 600 6000

3.0

3.9

108

8.0

CM600HG-90H

4500 600 10200

CM900HB-90H

4500 900 6000

3.0

3.9

162 12.0

3.6

2.4

2.4

6.0

CM900HC-90H

4500 900 6000

3.4

4.2

162 12.0

3.6

2.4

1.2

6.0

CM400HB-90H

4500 Volt HV-IGBT Modules


1.6 2.4
2.4
6.0
1.2
2.4

2.4

2.4

6.0

PackageNo.

4.0

160

1.8

0.021

0.042

0.015

HV7

4.0

240

1.8

0.0135

0.027

0.010

HV7

1.2

4.0

360

1.8

0.009

0.018

0.007

HV6

1.2

4.0

750

1.8

0.011

0.022

0.007

1.2

under development

CM900HG-90H

4500 900 10200

under development

CM1200HC-90R

4500 1200 6000

under development

CM1200HG-90R

4500 1200 10200

under development
6500 Volt HV-IGBT Modules

CM200HG-130H

6500 200 10200 5.1

41

2.5

0.7

1.2

0.35

6.6

0.5

4.0

370

1.0

0.042

0.066

0.018

HV9

CM400E4G-130H 6500 400 10200 5.1

82

5.0

1.4

1.2

0.35

4.5

0.5

4.0

600

1.0

0.021

0.036

0.012

HV8

4.0 1100 1.0

0.014

0.022

0.006

HV8

CM400HG-130H

6500 400 10200

CM600HG-130H

6500 600 10200 5.1

CM750HG-130R

6500 750 10200

under development
124

7.6

2.2

1.2

0.35

6.6

0.5

under development

Package HV1

Package HV2

Package HV3

Package HV4

Dimensions in mm

65

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High Voltage IGBT Modules (HV-IGBT)

Package HV5

Package HV6

Package HV7

Package HV8

Package HV9

Package HV10

Dimensions in mm

66

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5.02
High Voltage Diode Modules

Features
Complementary to HV-IGBT modules for multilevel
inverter designs
Wide creepage distance between main terminals
Ease of both installation and connection allows
application equipment to be reduced in
dimensions and weight

67

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High Voltage Diode Modules

Line-up HV-Diode Modules


Generation ConVCES & Base Plate figuration
Material
(V)

IC (A)
200

300

400

600

900

1000

1200

G3 (AlSiC)

Single

G3 (Cu)

Dual

RM1200DB-34S

G1 (Cu)

Single

RM1200HA-50S

G1 Cu)

Single

RM1200HA-66S

1600

1800
RM1800HE-34S

1700

2500

Dual
3300

RM400DY-66S

RM600DY-66S

G2 (Cu)

Dual

RM1200DB-66S

G3 (AlSiC)

Single

RM1200HE-66S
RM1000DC-66F1

Dual
G2 (Cu)

Dual

G3 (AlSiC)

Single

RM1200DG-66S,2

RM1500DC-66F1

RM900DB-90S

4500
RM600HE-90S

Dual
6500
1

G3 (AlSiC)

Under Development

RM300DG-90S

Dual RM200DG-130S2
2

RM400DG-130S1,2 RM600DG-130S 2

High Isolation Package (10.2kVrms)

Maximum Ratings
Type Number

VRRM
(V)

IDC
(A)

Viso
(V)

Electrical Characteristics
IFSM
(A)

VFM
(V)
Tj = 25C

Thermal & Mechanical


Characteristics

Qrr
(C)
Typ.

trr
(s)
Max.

Rth(j-c)
(C/W)

Rth(c-f)
(C/W)

PackageNo.

1700 Volt HV-Diode Modules


RM1200DB-34S

1700

1200

4000

20800

1.9

520

1.0

0.020

0.024

RM6

RM1800HE-34S

1700

1800

6000

9600

2.9

600

1.8

0.022

0.017

RM2

500

1.2

0.026

0.017

RM5

2500 Volt HV-Diode Modules


RM1200HA-50S

2500

1200

6000

9600

2.9

3300 Volt HV-Diode Modules

RM400DY-66S

3300

400

6000

3200

3.5

100

1.2

0.072

0.036

RM1

RM600DY-66S

3300

600

6000

4800

3.5

150

1.2

0.048

0.024

RM1

RM1200HA-66S

3300

1200

6000

9600

3.3

600

1.2

0.026

0.017

RM5

RM1200DB-66S

3300

1200

6000

9600

2.85

850

0.75

0.018

0.016

RM3

RM1200DG-66S

3300

1200

10200

9600

2.8

780

0.8

0.018

0.016

RM4

RM1200HE-66S

3300

1200

6000

9600

3.2

900

1.4

0.020

0.015

RM2

RM1000DC-66F

under development

RM1500DC-66F

under development
4500 Volt HV-Diode Modules

RM300DG-90S

4500

300

8400

2550

3.5

250

0.5

0.052

0.048

RM4

RM600HE-90S

4500

600

6000

4800

4.8

600

1.8

0.039

0.015

RM2

RM900DB-90S

4500

900

6000

6400

4.0

650

1.8

0.020

0.016

RM3

360

1.0

0.066

0.048

RM4

900

1.0

0.022

0.016

RM4

6500 Volt HV-Diode Modules


RM200DG-130S

6500

200

10200

RM400DG-130S
RM600DG-130S

68

9600

4.0

under development
6500

600

10200

4800

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High Voltage Diode Modules

Package RM1

Package RM2

Package RM3

Package RM4

Package RM5

Package RM6

Dimensions in mm

69

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Seite 70

5.03
High Voltage Intelligent Power Modules

Features
Highest Reliability in Material and Processes
Highest Quality Controls:
Static and switching tests
100% shipping inspection
Low VCE(sat) (Typ. 3.05V)
Combining gate drive and protection circuitry
(Over Current, Short Circuit, Over Temperature)
Optimised isolation design to satisfy 6kV AC
Designed for high power converters and inverters,
medium voltage drives, and traction drives

70

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Seite 71

High Voltage Intelligent Power Modules

Line-up HV-IPM
IDC
(A)

VRRM
(V)

Configuration

1200

3300

Maximum Ratings
Type Number
VCES
(V)

IC
(A)

Viso
(V)

Typical Protection
Functions

Electrical Characteristics
VCE(sat)
@ Tj = 25C
(V)
Typ.

Max.

Vf
(V)
Typ.

fPWM
(kHz)
Max.

PM1200HCE330-1

tDEAD
(s)
Min.

Thermal Characteristics
PackageNo.

SC*
(A)

OT
(C)

UV
(V)

IGBT
Rth(j-c)
(C/W)

Diode
Rth(j-c)
(C/W)

Rth(c-f)
(C/W)

2200

113

20

0.0083

0.0167

0.0075

HV-IPM
PM1200HCE330-1

3300 1200 6000

3.05

3.97

2.9

2.0

8.0

PM1

Package PM1

Dimensions in mm

71

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6.
Single Chip Inverter (M81500FP)
Applications
Dish Washer
Compressors for Refrigerator
Small Pumps for Heating

Features
Smallest IPM in the world (17.5 X 11.93 mm) for
drive range of typically 90W reducing the PCB size
A single silicon chip integrating control, drive,
protection functions (under voltage, interlock, short
circuit, over temperature) with IGBTs and freewheeling diode and bootstrap diodes
Single supply voltage of 15V, Control input 3V
compatible
Open drain fault output (FO)
Excellent short circuit robustness
Very first SMD package on the market for single
chip inverter concept simplifying the production
process
Terminal shapes optimized for better thermal
contact to the PCB
Available rating: 500V/1A
Evaluation demo-board (EVBM81500FP) for easy
performance evaluation of single chip inverter is
available on request

Single Chip Inverter Block Diagramm

72

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Seite 73

7.
High Voltage Integrated Circuits

Half Bridge Driver HVIC


This product is a semiconductor intergrated circuit designed to directly
drive the power MOS/IGBT modules of half bridge composition by
integrating the 1200V, 600V and 8/24V dielectric elements onto one chip.
The internal installation of high side/low side driver circuits, protective
circuits against the power supply voltage drop and interlocking circuits
enables a device to drive/control the power elements without using
the photocoupler from a logic circuit such as a microcomputer.

Applications
Most suitable for the following applied
products to drive the power MOS/IGBT
modules for inverters:

General inverters
Air conditioners, refrigerators and washing machines
AC servo motors
DC brushless motors
Plasma display panel
Illumination machinery

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Seite 74

High Voltage Integrated Circuits

Type name

Floating supply
voltage (V)

Output current
(A)

Driving method

Number of
input-signal

M63975FP

24

0.6

Low side

M63991FP

600

0.5

Half bridge

Input signal

With interlock function

16P2N

M63992FP

600

2.0

Half bridge

Input signal

With interlock function

16P2N

M63993FP

600

0.3

3 bridge

2x3 (6)

Input signal

With interlock function

36P2R

M63994FP

600

0.5

Half bridge

Inside

8P2S

M63996FP

600

2.0

Half bridge

Input signal

16P2N

M81700FP

600

2.0

Half bridge

Input signal

SD/With interlock function

16P2N

M81701FP

600

2.0

Half bridge

Input signal

With interlock function

16P2N

M81702FP

600

2.0

Half bridge

Input signal

With SD function

16P2N

M81703FP

600

2.0

Half bridge

Input signal

M81705FP

600

-0.15/-0.125

High side

M81706AFP

600

+0.12/-0.25

Half bridge

Input signal

M81707FP

600

0.1

Dual high side

Input signal

M81708FP

600

+0.12/-0.25

Half bridge

Input signal

With interlock function

16P2N

M81709FP

600

Half bridge

Input signal

With interlock function

16P2N

M81711FP

24

0.4

Dual low side

M81712FP

600

+0.2/-0.35

3 bridge

2x3 (6)

Input signal

M81713FP

600

0.5

Half bridge

Inside

M81716FP

24

0.4

Dual low side

1x2

M81721FP

600

0.6

Half bridge

M81731FP

600

0.1

Dual high side

1x2

M81019FP

1200

0.6

Half bridge

Input signal

M81719FP*

600

+0.12/-0.25

Half bridge

Input signal

8P2S

M81722FP

600

3.0

Half bridge

Input signal

8P2S

M81725FP

600

3.0

High side

M63958P/FP*

600

+0.5/-0.25

Half bridge

The complete HVIC line-up is RoHS compliant (except M63954P).

74

*Under development

Dead-time
control

Remarks

Package
outline

10P2N

16P2N
8P2S
With interlock function

8P2S
16P2N

8P2S
With interlock function

28x9R
8P2S
8P2S

Input signal

With interlock function

24P2Q
16P2N

With interlock function

24P2Q

8P2S
Inside

16P4/16P2N

Katalog2009-Innenteil_S3-78

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Seite 75

High Voltage Integrated Circuits

Package 16P4 (16pin 300mil DIP)

Package 16P2N (16pin 300mil SOP)

Package 36P2R (36pin 450mil SSOP)

Package 8P4 (8pin 300mil DIP)

Dimensions in mm

75

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Seite 76

High Voltage Integrated Circuits

Package 8P2S (8pin 225mil SOP)

Package 10P2N (10pin 300mil SOP)

Package 24P2Q (24pin 300mil SSOP)

Dimensions in mm

76

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Seite 77

8.
Power Loss Calculation Tool (MELCOSIM)
MELCOSIM 4.0
MELCOSIM is a software tool for a proper selection of MITSUBISHI ELECTRIC power
modules based on fast power loss and junction temperature calculation.
MELCOSIM is software designed for the power loss
calculation occurring in power modules under specific
user application conditions and for junction temperature rises as a consequence of power loss.
Since the first version MELCOSIM 1.0 has been issued in the year 2001, four versions of this software were
introduced through the Mitsubishi Electric website to
our customers. We are very pleased for all comments
and suggestion we have received in order to develop
and improve the current version MELCOSIM 4.0.
The main modification in the version 4.0 compared to
the version 3.0 is the possibility to calculate the maximum junction temperature. This calculation feature is
essential to determine the junction temperature at relative low output inverter frequency fo. The temperature
swing caused by power loss and thermal equivalent
RC elements of the power module will become significant if the output frequency fo is less then fo = 30Hz.
Above this output frequency the consideration of average junction temperature is sufficient for thermal design of MITSUBISHI ELECTRIC power modules. Below
fo = 30Hz the consideration of the maximum junction
temperature is essential for a professional inverter design.
The new version kept such properties of the previous
versions like fast algorithms, structured in-output
window and the possibility to bring graphical output.

The input-output view is divided into the four sections:


module type number, the specified property of the
module, input field for the application conditions and
output field for calculation results. MELCOSIM is expecting nine inputs so called application conditions
in order to be able to calculate power loss and junction temperature: modulation strategy, output current,
DC-link voltage, switching frequency, output frequency, on and off gate resistances, power factor, modulation factor or duty and the heat sink temperature measured directly under the chip. The field of the calculation result is giving the following information: average
power loss for IGBT and free wheel diode divided into
static and dynamic parts, the total power loss for the
power module, case temperature, the average and
maximum junction temperature in transistor and in the
free wheeling diode.
The graphical output provides the possibility to analyse the power losses and junction temperature by
changing one of the application conditions parameter
within the specification limits.
All calculation results can be exported into a text formatted file.
The latest version of MELCOSIM is available at
www.mitsubishichips.com/Global

The algorithms used in MELCOSIM are based


on typical specified data and numerical
approach for getting steady state and
dynamical losses. The specified dynamic
thermal resistance data of the power modules
is used for the calculation of junction
temperature rise.

8
77

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Seite 78

Authorised Distributors for Mitsubishi Electric Power Semiconductors


Austria

GLYN AUSTRIA

Campus 21 / Businesspark Wien Sd


Liebermannstr. A02/301, A-2345 Brunn am Gebirge
 +43 (0) 1 866 702 140 0, Fax: +43 (0) 1 866 702 140 5

Email: sales@glyn.at
www.glyn.at

Baltic countries
(Lithuania,
Estonia, Latvia)

ELGERTA LTD
Elgerta Group Company

Visoriu st. 2, LT-08300 Vilnius, Lithuania


 +370 5 265 2683, Fax: +370 5 265 0828

Email: lithuania@elgertagroup.com
www.elgertagroup.com

Benelux

GLYN BENELUX

Kerkhofstraat 21, NL-5554 HG Valkenswaard


 +31 (0) 40 204 970 0, Fax: +31 (0) 40 204 978 4

Email: sales@glyn.nl
www.glyn.nl

Bulgaria

OHM BG EOOD

Svetlina Street No. 11, 8800 Sliven, Bulgaria


 +359 4468 7533 , Fax: +359 4468 7533

Email: teokay@ohm.com.tr
www.ohm.com.tr

Czech
Republic

STARMANS ELECTRONICS
SRO

V Zahradach 24/836, CZ-18000 Praha 8


 +420 (0) 2 8384 2063, Fax: +420 (0) 2 8384 1067

Email: components@starmans.cz
www.starmans.net

GLYN CZECH REPUBLIC

Evropsk 116/655, CZ-16000 Praha 6


 +420 220 972 434, Fax: +420 233 311 055

Email: sales@glyn.cz
www.glyn.cz

Denmark

GLYN DENMARK

Slotsmarken 18, DK-2970 Hrsholm


 +45 702 016 33, Fax: +45 702 016 37

Email: sales@glyn-nordic.dk
www.glyn-nordic.dk

Finland

GLYN FINLAND

Tekniikantie 12, SF-02150 Espoo


 +358 (09) 251 735 85, Fax: +358 (09) 251 735 87

E-Mail: sales@glyn.fi
www.glyn.fi

France

COMPELEC

Rue Maryse Basti, F-69140 Rillieux la Pape


 +33 (0) 472 08 8080, Fax: +33 (0) 472 08 8215

Email: laguette.michel@compelec.com

RICHARDSON ELECTRONICS
SNC

46 Avenue Kleber, F-92706 Colombes Cedex


 +33 (0) 155 66 0030, Fax: +33 (0) 155 66 0031

Email: davidb@rell.com
www.rell.com

GLYN GMBH & CO KG

Am Wrtzgarten 8, D-65510 Idstein/Ts.


 +49 (0) 6126 590 388, Fax: +49 (0) 6126 590 188

Email: power@glyn.de
www.glyn.de

HY-LINE COMPONENTS GMBH

Inselkammerstr. 10, D-82008 Unterhaching


 +49 (0) 89 61 45 03 10, Fax: +49 (0) 89 61 45 03 20

Email: power@hy-line.de
www.hy-line.de

INELTRON GMBH

Hugenottenstr. 30, D-61381 Friedrichsdorf


 +49 (0) 6172 49 98 23 0, Fax: +49 (0) 6172 75 93 3

Email: info@ineltron.de
www.ineltron.de

RICHARDSON ELECTRONICS
GMBH

Boschstr. 1, D-82178 Puchheim


 +49 (0) 89 890 214 43, Fax: +49 (0) 89 890 214 90

Email: nkoch@rell.com
www.rell.com

Hungary

GLYN HUNGARY

Vahot Utca 6, HU-1119 Budapest XI


 +36 1 204 9571, Fax: +36 1 205 3319

Email: sales@glyn.hu
www.glyn.hu

Israel

MIGVAN TECHNOLOGIES &


ENGINEERING LTD

13 Hashiloach Street, IL-Petach-Tikva 49170


 +972 3 924 07 84, Fax: +972 3 924 07 87

Email: ori@mte.co.il

Italy

F.C.E. SRL (FANTON


COMPONENTI ELETTRONICI)

Via Merendi n. 42 , 20010 Cornaredo (MI)


 +39 02 89 65 13 29, Fax: +39 02 89 65 13 41

Email: info@fcedirect.com
www.fcedirect.com

RICHARDSON ELECTRONICS
SRL

Viale Lodovico Ariosto 492G,


I-50019 Sesto Fiorentino (FL)
 +39 (0) 55 42 08 31, Fax: +39 (0) 55 421 07 26

Email: claudioc@rell.com
www.rell.com

Norway

GLYN NORWAY

Postboks 135, Gramveien 76, N-1800 Askim


 +47 (0) 69 88 98 99, Fax: +47 (0) 69 88 97 99

Email: sales@linknordic.com
www.linknordic.com

Poland

DACPOL

Ul. Pulawska 34, PL-05500 Piaseczno


 +48 22 750 08 68, Fax: +48 22 757 07 64

Email: dacpol@dacpol.com.pl
www.dacpol.com.pl

Germany

78

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Seite 2

Mitsubishi Electric
Environmental Vision 2021
Climate protection is a major issue worldwide and will
have a significant impact on our future. The goals for
the reduction of climatically harmful greenhouse gas
CO2 are laid down in the Kyoto Protocol. Mitsubishi
Electric has had a tradition of reducing CO2 emissions
with advanced technology and highly energy-efficient
products, and is extending this commitment into the
future through its Environmental Initiative.

Authorised Distributors for Mitsubishi Electric Power Semiconductors

The Semiconductor European Business Group of


Mitsubishi Electric is working to realise these goals by
producing electronic devices that are more energy
efficient, while also working to reduce the amount of
lead and other controlled substances being used.
As shown in the chart below power losses have been
already decreased step by step with the introduction
of new Generations of Power Modules.

The Environmental Vision 2021 is Mitsubishi


Electrics long-range vision for environmental
management, which looks towards the year 2021
as the 100th anniversary of the companys founding
by which to achieve specific and meaningful results.
Based on the principle of Making Positive
Contributions to the Earth and its People through
Technology and Action, the Vision defines a set of
initiatives for realising a sustainable, recycling-based
global society through application of the companys
broad range of high-level technologies and the
actions of its global workforce of talented individuals.
Environmental Vision 2021 commits Mitsubishi
Electric to deliver the following by 2021:
Reduction of CO2 emissions
Sustain resource cycle by Reducing, Reusing and
Recycling (3Rs)
Run educational/leadership training for employees
and children to nurture environmental awareness

Poland

GLYN POLAND

Ul. Krupnicza 13, PL-50075 Wroclaw


 +48 71 78 28 75 8, Fax: +48 71 78 28 75 9

Email: sales@glyn.pl
www.glyn.pl

Portugal

KTS (KEY TECHNOLOGIES


AND SUPPORT, LDA)

Urbanizaao Varandas de Monsanto


Praa Carlos Aboim Inglez, lote 8 - Loja Esq.
2610-287 Alfragide
 +351 21 472 73 90, Fax: +351 21 472 73 99

E-mail: KTS.lda@mail.telepac.pt
www.KTS.pt

Romania

S.C. SOFTRONIC SRL

Str. Unirii, Nr. 37, Dolj, Craiova


 +40 251 41 48 22, Fax: +40 251 41 78 11

dragos.voicu@softronic.ro
www.softronic.ro

S.C. VITACOM ELECTRONICS


SRL

Buna Ziua St. FN, RO-400495, Cluj-Napoca


 +40 264 43 84 02, Fax: +40 264 43 84 00

Email: industrie@vitacom.ro
www.vitacom.ro

BOR&S ELECTRONICS LTD

Rogozhny Val 3/58, RU-109544 Moscow


 +7 495 27 80 068, Fax: +7 495 27 80 068

Email: sales@belgroup.com
www.belgroup.com

DIAL ELECTROLUX LTD

BP Greenwood bld. 17, Krasnogorskiy district


RU-143441 Moscow Putilkovo
 +7 495 995 20 20, Fax: +7 495 739 55 33

Email: sales@dialelectrolux.ru
www.dialelectrolux.ru

PLATAN COMPONENTS

40-1, BlD. 2, Ivana Franko Str., RU-121351 Moscow


 +7 495 97 000 99, Fax: +7 495 73 75 999

Email: platan@aha.ru
www.platan.ru

SYMMETRON ELEKTRONIC
COMPONENTS

Tallinskaya St. 7, RU-195196 St. Petersburg


 +7 812 449 40 09, Fax: +7 812 449 40 15

Email: svor@symmetron.ru
www.symmetron.ru

Slovakia

3Q SERVICE LTD

Hollho 59 / P.O.Box 66, SK-01008 Zilina


 +421 41 56 26 291, Fax: +421 41 56 26 315

Email: pobuda@trikve.sk
www.trikve.sk

Spain

AICOX SOLUCIONES SA

Avda. Somosierra, 12, 1A,


E-28709 San Sebastian de los Reyes
 +34 91 65 92 970, Fax: +34 91 65 31 019

Email: informa@aicox.com
www.aicox.com

INELEC SA

Bocangel, 38, E-28028 Madrid


 +34 91 726 35 00, Fax: +34 91 726 33 34

Email: inelec@inelec.net
www.inelec.net

RICHARDSON ELECTRONICS
IBRICA SA

Calle Hierro, 1a Planta Nave 10 Edificio Legazpi


E-28045 Madrid
 +34 91 528 37 00, Fax: +34 91 467 54 68

Email: fernando@rell.com
www.rell.com

GLYN SWEDEN

Tammsvg 13, SE-81576 Sderfors


 +46 (0) 293 300 86, Fax: +46 (0) 293 300 87

E-Mail: sales@glyn.se
www.glyn.se

RICHARDSON ELECTRONICS
NORDIC AB

Girovgen 13, S-17562 Jrflla


 +46 8 564 70 590, Fax: +46 8 760 46 63

Email: stefan@rell.com
www.rell.com

ELEKTRON AG

Riedhofstr. 11, CH-8804 Au (Zrich)


 +41 (0) 44 781 01 11, Fax: + 41 (0) 44 781 06 04

Email: info@elektron.ch
www.elektron.ch

GLYN SWITZERLAND

Bachweg 3, CH-8133 Esslingen


 +41 (0) 44 944 55 00, Fax: +41 (0) 44 944 55 09

Email: sales@glyn.ch
www.glyn.ch

Turkey
and Egypt

OHM ELEKTRONIK VE
TICARET LTD STI

Kemeralti Cad. Ada Han No. 87


5 Tophane, TR-80030 Istanbul
 +90 212 292 05 90, Fax: +90 212 244 27 72

Email: teokay@ohm.com.tr
www.ohm.com.tr

Ukraine

DACPOL UKRAINE

Snovskaya str. 20, 02090 Kiev, Ukraine


 +380 44 501 93 44, Fax: +380 44 502 64 87

Email: kiev@dacpol.com
www.dacpol.ua

SYMMETRON UKRAINE

Raskovoy M. Str. 13, 02660 Kiev, Ukraine


 +380 44 239 2065, Fax: +380 44 239 2069

Email: ec@symmetron.ua
www.symmetron.ua

JOHN G. PECK

B1 Wymeswold Industrial Park, Wyemswold Road


Burton on the Wolds, Loughborough, Leics. LE12 5TY
 +44 1509 88 10 10, Fax: +44 1509 88 16 88

Email: info@jgpl.com
www.jgpl.com

Russia

Every day, the Mitsubishi Electric Group as a whole


makes a positive contribution to realising its
Environmental Vision 2021 through its products,
activities and technologies.
Sweden

Switzerland

United Kingdom

79

10:00 Uhr

Seite 1

Mitsubishi Electric Europe B.V. (European Headquarter)


Semiconductor European Business Group
Gothaer Strae 8 D-40880 Ratingen
Phone: +49 (0) 2102/486 0 Fax: +49 (0) 2102/486 7220

Mitsubishi Electric Europe B.V.


German Branch
Semiconductor Sales Office
Gothaer Strae 8
D-40880 Ratingen
Phone: +49 (0) 2102/486 4520
Fax: +49 (0) 2102/486 7220

Mitsubishi Electric Europe


Scandinavian Branch
Semiconductor Sales Office
Hammarbacken 14
S-19127 Sollentuna
Phone: +46 8/6 25 10 00
Fax: +46 8/6 25 10 33

Mitsubishi Electric Europe


French Branch
Semiconductor Sales Office
25, Boulevard des Bouvets
F-92741 Nanterre Cedex
Phone: +33 1/55 68 55 68
Fax: +33 1/55 68 57 39

Mitsubishi Electric Europe


Moscow Representative Office
Semiconductor
Kosmodamianskaya Nab. 52 Bld.5
113054 Moscow
Phone: +7 495 721 2070
Fax: +7 495 721 2071

Mitsubishi Electric Europe


UK Branch
Semiconductor
Hatfield, GB-Herts. AL 10 8XB
Phone: +44 1707/21 61 00
Fax: +44 1707/27 89 97

Mitsubishi Electric Europe


Spanish Representative Office
C/ Las Hayas, 127
28922 Alcorcn (Madrid)
Phone: +34 916 436 805

Selection Guide 2009

27.04.2009

POWER DEVICES

Katalog2009-Umschlag_U1-U4

MITSUBISHI ELECTRIC

Mitsubishi Electric Europe


Italian Branch
Semiconductor Sales Office
Viale Colleoni 7 Palazzo Sirio
Centro Direzionale Colleoni
I-20041 Agrate Brianza (Milano)
Phone: +39 039/60 53 10
Fax: +39 039/60 53 212

www.mitsubishichips.eu www.mitsubishichips.com semis.info@meg.mee.com

POWER DEVICES
Selection Guide 2009

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